CND2047 10GHz Frequency Divider by 4 Fixed Modulus Prescaler GaAs Monolithic Microwave IC Description The CND2047 is a low power consumption very high speed divider by 4 GaAs prescaler manufactured with a 0.7µm self aligned implanted MESFET process. The design is full differential input/output that allows direct drive into 50Ω load. 2047 The CND2047 is available in chip form and in 2 packages form: * low cost SOIC8 plastic package * 8 lead Flat Pack ceramic surface mount package FTP8 ceramic package Main Features ¦ Very broad operating frequency range ¦ Low power dissipation: 300mW ¦ Single supply operation: 3V to 5V ¦ High input sensitivity: -10dBm@8 Ghz at 25°C and -5dBm@8Ghz at 125°C ¦ Low phase noise: -139dBc/Hz at 1KHz SOIC8 plastic package Main Characteristics Tamb= +25°C Symbol Vdd Parameter Min Typ Max Unit 3 5 6 V 120 300 400 mW FTP8 9 10 SOIC8 8 9 Drain voltage Pdiss Power dissipation Fmax Maximum input frequency GHz ESD Protections: Electrostatic discharge sensitive device observe handling precautions! Ref. : DSCND20470077 -17-Mar-00 1/10 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 10GHz Frequency Divider by 4 CND2047 Electrical Characteristics in FTP8 Ceramic Package and in die form Guaranteed electrical specifications over the temperature range of -55°C to +125°C but tested at Tamb=25°C under configuration described in Fig.1 ( Vdd=5V ; Differential inputs; Pin=0dBm ; Zo=50 Ω ) Symbol Fmax Parameter Maximum input frequency Idd Min Typ 8.25 8.75 Supply current 60 Max Unit GHz 75 mA Max Unit Typical design information over the temperature range of -55°C to +125°C ( Vdd=5V, Zo=50 Ω ) Symbol Fmax Parameter Min Typ Pin= -5dBm 8 8.5 GHz Pin= 0dBm 8.25 8.75 Ghz Pin= -5dBm 7.5 8 Ghz Pin= 0dBm 8 8.5 Ghz -4 -1.5 dBm Maximum input frequency differential input one input Pout Output power Idd Supply current 60 75 mA Typical design information over the temperature range of -55°C to +125°C. ( Vdd=3.3V, Zo=50 Ω ) Symbol Fmax Parameter Min Typ Max Unit Pin= -5dBm 7.5 8 GHz Pin= 0dBm 8 8.5 Ghz Pin= -5dBm 7 7.5 Ghz Pin= 0dBm 7.5 8 Ghz -7 -4.5 dBm Maximum input frequency differential input one input Pout Output power Idd Supply current Ref. : DSCND20470077 -17-Mar-00 40 2/10 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 55 mA Specifications subject to change without notice 10GHz Frequency Divider by 4 CND2047 Electrical Characteristics in SOIC8 package Guaranteed electrical specifications over the temperature range of -40°C to +85°C but tested at Tamb=25°C under configuration described in Fig.1 ( Vdd=5V ; Differential inputs; Pin=0dBm ; Zo=50 Ω ) Symbol Fmax Parameter Maximum input frequency Idd Min Typ 8.5 9 Supply current 60 Max Unit GHz 75 mA Max Unit Typical design information over the temperature range of -40°C to +85°C ( Vdd=5V, Zo=50 Ω ) Symbol Fmax Parameter Min Typ Pin= -5dBm 8 8.5 GHz Pin= 0dBm 8.5 9 Ghz Pin= -5dBm 7.25 7.75 Ghz Pin= 0dBm 7.75 8.25 Ghz -4 -1.5 dBm Maximum input frequency differential input one input Pout Output power Idd Supply current 60 75 mA Typical design information over the temperature range of -40°C to +85°C. ( Vdd=3.3V, Zo=50 Ω ) Symbol Fmax Parameter Min Typ Max Unit Pin= -5dBm 7 7.5 GHz Pin= 0dBm 7.5 8 Ghz Pin= -5dBm 6.5 7 Ghz Pin= 0dBm 6.75 7.25 Ghz -7 -4.5 dBm Maximum input frequency differential input one input Pout Output power Idd Supply current Ref. : DSCND20470077 -17-Mar-00 40 3/10 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 55 mA Specifications subject to change without notice 10GHz Frequency Divider by 4 CND2047 Absolute Maximum Ratings (1) Tamb= 25°C Symbol Parameter Values Units Vdd Drain voltage 7 V Pin Maximum input power 15 dBm Top Operating temperature range SOIC8 -40 to +85 °C Die form / FTP8 -55 to +125 Tstg Storage temperature range -65 to +175 °C (1) Operation of this device above anyone of these parameters may cause permanent damage Ref. : DSCND20470077 -17-Mar-00 4/10 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 10GHz Frequency Divider by 4 CND2047 Typical Characteristics Tamb= 25°C, Zo=50Ω, Vdd=5V Output power level vs Input frequency and Vdd 2 Output level (dBm) 0 -2 Vdd=5V -4 Vdd=3.3V -6 -8 -10 1 3 5 7 Frequency (GHz) 9 11 Device current vs Voltage and Temperature 80 70 Idd (mA) 60 50 25°C 40 -55°C 125°C 30 20 10 0 2,5 3 3,5 4 4,5 Vdd (V) 5 5,5 6 SSB phase noise vs. Offset frequency (Fin=3.9 Ghz) SSB phase noise (dBc/Hz) 0 -20 -40 -60 -80 -100 -120 -140 -160 10 100 1000 10000 100000 Offset frequency (Hz) Ref. : DSCND20470077 -17-Mar-00 5/10 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 10GHz Frequency Divider by 4 CND2047 Fmax vs Vdd (Pin=0dBm; differential inputs) 12 Frequency (GHz) 10 8 SOIC8 FTP8 6 4 2 0 2 2,5 3 3,5 4 4,5 5 5,5 6 Vdd (Volts) FTP8 package / Die form Input sensitivity vs. Input frequency and temperature (Vdd=5V; differential inputs) 15 Input level (dBm) 5 -5 +25°C -15 +125°C -25 -55°C -35 -45 -55 1,00 3,00 5,00 7,00 9,00 11,00 Frequency (GHz) SOIC8 package Input sensitivity vs. Input frequency and temperature (Vdd=5V; differential inputs) 15,00 Input level (dBm) 5,00 -5,00 +80 +25 -15,00 -40 -25,00 -35,00 -45,00 -55,00 1,00 3,00 5,00 7,00 9,00 11,00 Frequency (GHz) Ref. : DSCND20470077 -17-Mar-00 6/10 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 10GHz Frequency Divider by 4 CND2047 Typical bias tuning Tamb=25°C 8 1 nF Signal generator 50 Ohms load Tansmission lines are 50 Ohms 1 Vdd 1 nF 0° 1 nF Spectrum analyzer 50 Ohms load 1 nF 5 4 180° Fig.1 : Typical measurement and RF biasing configuration (differential inputs) 8 1 nF Signal generator 50 Ohms load Tansmission lines are 50 Ohms 1 Vdd 1 nF Q F/4 RF output (50 Ohms) QB F/4 RF output (50 Ohms) 4 5 1 nF Fig.2 : RF biasing configuration with single input Fig.3 : Chip block diagram Ref. : DSCND20470077 -17-Mar-00 7/10 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 10GHz Frequency Divider by 4 CND2047 SOIC8 Mechanical Data 5+/-0.15 [20+/-0.006] 3.81 [.15] 1.27 [0.05] 8 0.2 [0.006] 5 0.1+/-0.15 3,7 (1,45) [.004+/-.006] 6+/-0,15 (,236+/-,006) 1.4 [0.055] 1 4 0.4 [.015] 8° max 1.7 max unité: mm Unit: [In] Tolérance générale: +/-0.05 [general tolerance: +/-.002] Pin out 1 2 3 4 5 6 7 8 Ref. : DSCND20470077 -17-Mar-00 Signal Vdd CK CKB Ground Ground QB Q Vdd 8/10 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 10GHz Frequency Divider by 4 CND2047 FTP8 Mechanical Data 3,81 1,27 typ. 8 5 0,127 max 2047 9,56 - 10,16 4,6 max Datecode 1,00 - 1,77 4 1 2,00 max 0,127 ±0,02 0,38 4,6 max Unite: mm Pin out 1 2 3 4 5 6 7 8 Ref. : DSCND20470077 -17-Mar-00 Signal Vdd CK CKB Ground Ground QB Q Vdd 9/10 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 10GHz Frequency Divider by 4 CND2047 Chip Mechanical Data Vdd CKB CK Vdd Recommended bonding Bonding pads of the product are covered with aluminium metallic layer. Wedge or ball bonding can be used. Aluminium wire has be used if the assembly process is up to 250°C. Otherwise the use of gold wire is possible. The ground bounding length should be as short as possible to optimize the use of the product. The bonder should be properly grounded. QB Q UMS GND 7151 GND GND Recommended die attach Epoxy die attach is recommended. Minimum quantity of electrically conductive epoxy must be used, with a narrow fillet around the die after contact Vdd1 Note 1: Vdd1 is used to connect the output buffers (on Q/QB) and can be applied separately from Vdd. dimensions in µm : 1050 (+10 /-100) * 900 (+10 /-100) Thickness= 300µm ± 20µm Pads area: 100*100µm Ordering Information Chip form FTP8 Package SOIC8 Package :CND2047-99F/00 :CND2047-SNF/23 :CND2047-DAF/20 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCND20470077 -17-Mar-00 10/10 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice