ETC CNX39 Optically coupled isolator Datasheet

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4155055
CNG35, CNG36, CNG39
CNX35, CNX36, CNX39
OPTICALLY COUPLED ISOLATORS
Circuit
Features
Description
Absolute Maximum Ratings
Electro-optical Characteristics
Similar Optocouplers
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Circuit
Features
3120-4400 Volt Isolation.
High DC Current Transfer Ratio.
Low Cost Dual-In-Line Package.
Working Voltage 2500 VDC
Description
The CNG/CNX Series are optically coupled isolators consisting of a Gallium Arsenide
infrared emitting diode and an NPN silicon phototransistor mounted in a standard 6-pin dualin-line package. Surface Mount Option Available.
All electrical parameters are 100% tested by manufacturing. Specifications are guaranteed to a
cumulative 0.65% AQL
Absolute Maximum Ratings (Ta=25°C)
Storage Temperature:
Operating Temperature:
Lead Soldering:
Input-To-Output Isolation Voltage:
-55°C to +150°C
-55°C to +100°C
260°C for 10s, 1.6mm from case
3120-4400Vdc
Input Diode
Forward DC Current:
Reverse DC Voltage:
Peak Forward Current (1µs p.w.
300pps):
Power Dissipation:
Derate Linearly:
100mA
5V
3A
200mW
1.33mW/°C above 25°C
Output Transistor
Collector-Emitter Voltage:
Power Dissipation:
30V
200mW
Optocoupler
Collector Cut-off Current (Dark) ICEW: 200nA Max (Vcc=10V; work. volt.=2.5kV Diode;
Isolation Voltage DC VIO:
If=0)
Isolation Voltage AC (RMS) VIO:
4.4kVMin
3.12kVMin
Package
Total Power Dissipation:
Derate Linearly:
250mW
3.3mW/°C above 25°C
Electro-optical Characteristics (Ta=25°C)
INPUT
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
VF
Forward Voltage
IF=10mA
1.5
V
IR
Reverse Current
VR=5V
10
µA
OUTPUT
PARAMETER
Collector cut-off current (dark)
ICEO
Collector-Emitter Breakdown
CONDITIONS
MIN TYP MAX UNIT
VCE=10V
50
nA
VCE=10V, TA=70°C
10
µA
VCB=10V
20
nA
V(BR) CEO
30
V
Voltage
COUPLED
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
DC Current Transfer Ratio
IC/IF
CNG/CNX35 IF=10mA, VCE=5V 40
80
%
CNG/CNX36
63
125
%
CNG/CNX39
100
200
%
RIO
Input-to-Output Isolation
Resistance
VIO=500V, (note 1) 100
VCE(SAT)
Collector-Emitter Saturation
Voltage
IF=10mA,
IC=2.5mA
0.2
CIO
Capacitance Input to Output
f=1MHz (note 1)
0.6
TR
Output Rise Time
IF=10mA,
VCC=5.0V
2
4
µs
TON
Output Turn-on Time
RL=75ohm,
TA=25°C
3
5.6
µs
TF
Output Fall Time
2
3.5
µs
TOFF
Output Turn-off Time
2.5
4.1
µs
Gohm
0.4
V
pf
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