CNY64, CNY65, CNY66 Vishay Semiconductors Optocoupler, Phototransistor Output, Very High Isolation Voltage FEATURES • Rated recurring peak voltage (repetitive) VIORM = 1000 VRMS 64 • Thickness through insulation ≥ 3 mm 65 • Creepage current resistance according to VDE 0303/IEC 60112 comparative tracking index: CTI ≥ 200 Top View A C 4 • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 66 C E V D E APPLICATIONS • Switch-mode power supplies 17187 • Line receiver DESCRIPTION The CNY64/CNY65/CNY66 consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4 pin plastic package. The single components are mounted opposite one another, providing a distance between input and output for highest safety requirements of > 3 mm. VDE STANDARDS These couplers perform safety functions according to the following equipment standards: • DIN EN 60747-5-5 (VDE 0884) Optocoupler for electrical safety requirements • IEC 60950/EN 60950 Office machines (applied for reinforced isolation for mains voltage ≤ 400 VRMS) • VDE 0804 Telecommunication apparatus and data processing • IEC 60065 Safety for mains-operated electronic and related household apparatus • VDE 0700/IEC 60335 Household equipment • VDE 0160 Electronic equipment for electrical power installation • VDE 0750/IEC 60601 Medical equipment • Computer peripheral interface • Microprocessor system interface • Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): - for appl. class I - IV at mains voltage ≤ 300 V - for appl. class I - IV at mains voltage ≤ 600 V - for appl. class I - III at mains voltage ≤ 1000 V according to DIN EN 60747-5-5 (VDE 0884) AGENCY APPROVALS • UL1577, file no. E76222 system code H, J, and K, double protection • DIN EN 60747-5-5 (VDE 0884) • VDE related features: - rated impulse voltage (transient overvoltage), VIOTM = 8 kV peak - isolation test voltage (partial discharge test voltage), Vpd = 2.8 kV peak ORDER INFORMATION PART REMARKS CNY64 CTR 50 to 300 %, high isolation distance, 4 pin CNY65 CTR 50 to 300 %, high isolation distance, 4 pin CNY66 CTR 50 to 300 %, high isolation distance, 4 pin CNY64A CTR 63 to 125 %, high isolation distance, 4 pin CNY65A CTR 63 to 125 %, high isolation distance, 4 pin CNY64B CTR 100 to 200 %, high isolation distance, 4 pin CNY65B CTR 100 to 200 %, high isolation distance, 4 pin www.vishay.com 236 For technical questions, contact: [email protected] Document Number: 83540 Rev. 1.7, 20-Oct-08 CNY64, CNY65, CNY66 Optocoupler, Phototransistor Output, Vishay Semiconductors Very High Isolation Voltage ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage VR 5 V Forward current IF 75 mA IFSM 1.5 A Pdiss 120 mW Tj 100 °C Collector emitter voltage VCEO 32 V Emitter collector voltage VECO 7 V tP ≤ 10 µs Forward surge current Power dissipation Junction temperature OUTPUT Collector current IC 50 mA ICM 100 mA Pdiss 130 mW Tj 100 °C tP/T = 0.5, tP ≤ 10 ms Collector peak current Power dissipation Junction temperature COUPLER VISO 8.2 kV Total power dissipation AC Isolation test voltage (RMS) t = 1 min Ptot 250 mW Ambient temperature range Tamb - 55 to + 85 °C Storage temperature range Tstg - 55 to + 100 °C Tsld 260 °C 2 mm from case, ≤ 10 s Soldering temperature Note Tamb = 25 °C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. ELECTRICAL CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. 1.6 UNIT INPUT Forward voltage IF = 50 mA VF 1.25 VR = 0, f = 1 MHz Cj 50 Collector emitter voltage IC = 1 mA VCEO 32 V Emitter collector voltage IE = 100 µA VECO 7 V VCE = 20 V, If = 0 A ICEO 200 nA Collector emitter saturation voltage IF = 10 mA, IC = 1 mA VCEsat 0.3 V Cut-off frequency VCE = 5 V, IF = 10 mA, RL = 100 Ω fc 110 kHz f = 1 MHz Ck 0.3 pF Junction capacitance V pF OUTPUT Collector emitter leakage current COUPLER Coupling capacitance Note Tamb = 25 °C, unless otherwise specified. Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. CURRENT TRANSFER RATIO PARAMETER IC/IF Document Number: 83540 Rev. 1.7, 20-Oct-08 TEST CONDITION VCE = 5 V, IF = 5 mA PART SYMBOL MIN. CTR 50 300 % CNY64A CTR 63 125 % CNY65A CTR 63 125 % CNY64B CTR 100 200 % CNY65B CTR 100 200 % For technical questions, contact: [email protected] TYP. MAX. UNIT www.vishay.com 237 CNY64, CNY65, CNY66 Vishay Semiconductors Optocoupler, Phototransistor Output, Very High Isolation Voltage MAXIMUM SAFETY RATINGS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT IF 120 mA Pdiss 250 mW VIOTM 10 kV Tsi 150 °C INPUT Forward current OUTPUT Power dissipation COUPLER Rated impulse voltage Safety temperature Note According to DIN EN 60747-5-5 (see figure 1). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits. INSULATION RATED PARAMETERS TEST CONDITION SYMBOL MIN. Partial discharge test voltage routine test PARAMETER 100 %, ttest = 1 s Vpd 2.8 kV Partial discharge test voltage lot test (sample test) tTr = 60 s, ttest = 10 s, (see figure 2) Vpd 2.2 kV Ω Insulation resistance TYP. MAX. UNIT VIO = 500 V, Tamb = 25 °C RIO 1012 VIO = 500 V, Tamb = 100 °C RIO 1011 Ω VIO = 500 V, Tamb = 150 °C (construction test only) RIO 109 Ω VIOTM 250 225 t1, t2 t3 , t4 ttest tstres Psi (mW) 200 175 150 VPd 125 VIOWM VIORM 100 75 = 1 to 10 s =1s = 10 s = 12 s Isi(mA) 50 25 0 0 0 95 10922 25 50 75 100 125 150 175 200 13930 Tamb (°C) t3 ttest t4 tTr = 60 s t1 t2 t stres t Fig. 1 - Derating Diagram Fig. 2 - Test Pulse Diagram for Sample Test According to DIN EN 60747-5-5/DIN EN 60747-; IEC 60747 SWITCHING CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL Delay time VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 3) td 2.6 µs Rise time VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 3) tr 2.4 µs Fall time VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 3) tf 2.7 µs Storage time VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 3) ts 0.3 µs Turn-on time VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 3) ton 5.0 µs Turn-off time VS = 5 V, IC = 5 mA, RL = 100 Ω, (see figure 3) toff 3.0 µs Turn-on time VS = 5 V, IF = 10 mA, RL = 1 kΩ, (see figure 4) ton 25.0 µs Turn-off time VS = 5 V, IF = 10 mA, RL = 1 kΩ, (see figure 4) toff 42.5 µs www.vishay.com 238 MIN. For technical questions, contact: [email protected] TYP. MAX. UNIT Document Number: 83540 Rev. 1.7, 20-Oct-08 CNY64, CNY65, CNY66 Optocoupler, Phototransistor Output, Vishay Semiconductors Very High Isolation Voltage IF 0 IF 0 IC = 5 mA; adjusted through input amplitude RG = 50 tp = 0.01 T tp = 50 µs Channel II 100 10 % 0 Oscilloscope RL 1 M CL 20 pF 95 10900 tr td ts t on tp td tr t on (= td + tr) Pulse duration Delay time Rise time Turn-on time Fig. 3 - Test Circuit, Non-Saturated Operation IF t 100 % 90 % Channel I 50 tp IC +5V IF t tf t off ts tf t off (= ts + tf) Storage time Fall time Turn-off time 96 11698 Fig. 5 - Switching Times +5V IF = 10 mA 0 IC R G = 50 Ω tp = 0.01 T t p = 50 µs Channel I Channel II 50 Ω 1 kΩ Oscilloscope R L ≥ 1 MΩ C L ≤ 20 pF 95 10843 Fig. 4 - Test Circuit, Saturated Operation TYPICAL CHARACTERISTICS 200 1000 IF - Forward Current (mA) Ptot - Total Power Dissipation (mW) Tamb = 25 °C, unless otherwise specified 160 120 Coupled device 80 Phototransistor IR-diode 40 0 0 95 11003 25 50 75 100 Tamb - Ambient Temperature (°C) Fig. 6 - Total Power Dissipation vs. Ambient Temperature Document Number: 83540 Rev. 1.7, 20-Oct-08 100 10 1 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 96 11862 VF - Forward Voltage (V) Fig. 7 - Forward Current vs. Forward Voltage For technical questions, contact: [email protected] www.vishay.com 239 CNY64, CNY65, CNY66 Vishay Semiconductors Optocoupler, Phototransistor Output, 100 1.5 VCE = 5 V IF = 10 mA 1.4 1.3 IC - Collector Current (mA) CTRrel - Relative Current Transfer Ratio Very High Isolation Voltage 1.2 1.1 1.0 0.9 0.8 0.7 0.6 Tamb - Ambient Temperature (°C) 2 mA 1 1 mA 1 10 100 VCE - Collector Emitter Voltage (V) Fig. 11 - Collector Current vs. Collector Emitter Voltage 1000 1.0 0.9 VCEsat - Collector Emitter Saturation Voltage (V) VCE = 20 V IF = 0 100 10 0.8 0.7 CTR = 50 % 0.6 0.5 0.4 0.3 0.2 20 % 0.1 10 % 0.0 1 1 0 10 20 30 40 50 60 70 80 90 100 96 12000 Tamb - Ambient Temperature (°C) VCE = 5 V 10 1 0.1 95 11012 1 10 100 IF - Forward Current (mA) Fig. 10 - Collector Current vs. Forward Current www.vishay.com 240 100 Fig. 12 - Collector Emitter Saturation Voltage vs. Collector Current CTR - Current Transfer Ratio (%) 100 0.01 0.1 10 IC - Collector Current (mA) 96 11912 Fig. 9 - Collector Dark Current vs. Ambient Temperature IC - Collector Current (mA) 5 mA 95 11013 Fig. 8 - Relative Current Transfer Ratio vs. Ambient Temperature ICEO - Collector Dark Current, with open Base (nA) 10 mA 10 0.1 0.1 0.5 - 30 - 20 - 10 0 10 20 30 40 50 60 70 80 96 11911 IF = 50 mA 1000 VCE = 5 V 100 10 1 0.1 95 11015 1 10 100 IF - Forward Current (mA) Fig. 13 - Current Transfer Ratio vs. Forward Current For technical questions, contact: [email protected] Document Number: 83540 Rev. 1.7, 20-Oct-08 CNY64, CNY65, CNY66 50 ton/toff - Turn-on/Turn-off Time (µs) ton/toff - Turn-on/Turn-off Time (µs) Optocoupler, Phototransistor Output, Vishay Semiconductors Very High Isolation Voltage toff 40 30 ton 20 Saturated operation VS = 5 V RL = 1 kΩ 10 0 0 95 11017 5 10 20 15 20 15 toff 10 5 0 0 IF - Forward Current (mA) 95 11016 Fig. 14 - Turn-on/Turn-off Time vs. Collector Current Non-saturated operation VS = 5 V RL = 100 Ω ton 4 2 6 8 10 IC - Collector Current (mA) Fig. 15 - Turn-on/Turn-off Time vs. Forward Current PACKAGE DIMENSIONS in millimeters FOR CNY64 12.8 ± 0.1 9.1 ± 0.3 6.01 ± 0.1 7.2 ± 0.1 10.16 ± 0.2 5.08 ± 0.2 4 0. 5 0. A Cath Coll Weight: ca. 0.73 g Creepage distance: > 9.5 mm Air path: > 9.5 mm after mounting on PC board E technical drawings according to DIN specifications Drawing-No.: 6.544-5038.01-4 Issue: 2; 10.11.98 14765 Document Number: 83540 Rev. 1.7, 20-Oct-08 For technical questions, contact: [email protected] www.vishay.com 241 CNY64, CNY65, CNY66 Vishay Semiconductors Optocoupler, Phototransistor Output, Very High Isolation Voltage PACKAGE DIMENSIONS in millimeters FOR CNY65 17.8 ± 0.1 9.1 ± 0.3 6.1 ± 0.1 9.6 ± 0.1 15.24 ± 0.2 7.62 ± 0.2 technical drawings according to DIN specifications 4 0. 5 0. A Weight: ca. 1.40 g Creepage distance: > 14 mm Air path: > 14 mm after mounting on PC board Coll Cath E 14763 PACKAGE DIMENSIONS in millimeters FOR CNY66 9.6 ± 0.1 9.1 ± 0.3 6.1 ± 0.1 20.4 ± 0.1 17.8 ± 0.2 7.62 ± 0.2 technical drawings according to DIN specifications 4 0. 5 0. A Cath www.vishay.com 242 Coll Weight: ca. 1.70 g Creepage distance: > 17 mm Air path: > 17 mm after mounting on PC board E For technical questions, contact: [email protected] 14764 Document Number: 83540 Rev. 1.7, 20-Oct-08 CNY64, CNY65, CNY66 Optocoupler, Phototransistor Output, Vishay Semiconductors Very High Isolation Voltage OZONE DEPLETING SUBSTANCES POLICY STATEMENT It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number: 83540 Rev. 1.7, 20-Oct-08 For technical questions, contact: [email protected] www.vishay.com 243 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1