Central TM PROCESS CP178 Power Transistor Semiconductor Corp. NPN Darlington Transistor PROCESS DETAILS Die Size 131 x 131 MILS Die Thickness 12.5 ±1.0 MILS Emitter Bonding Pad Area 27 x 36 MILS Base Bonding Pad Area 20 x 37 MILS Top Side Metalization Al - 50,000Å Back Side Metalization Ag - 10,000Å GEOMETRY PRINCIPAL DEVICE TYPES 2N6059 BACKSIDE COLLECTOR BACKSIDE COLLECTOR 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R0 (12 -June 2003)