Central CP759R Small signal mosfet p-channel enhancement-mode mosfet chip Datasheet

PROCESS
CP759R
Small Signal MOSFET
P-Channel Enhancement-Mode MOSFET Chip
PROCESS DETAILS
Die Size
9.1 x 9.1 MILS
Die Thickness
3.9 MILS
Gate Bonding Pad Area
2.5 MILS DIAMETER
Source Bonding Pad Area
3.9 x 3.9 MILS
Top Side Metalization
Al-Si - 30,000Å
Back Side Metalization
Au - 12,000Å
GEOMETRY
GROSS DIE PER 6 INCH WAFER
290,000
PRINCIPAL DEVICE TYPE
CMRDM7590
R0 (13-May 2010)
w w w. c e n t r a l s e m i . c o m
PROCESS
CP759R
Typical Electrical Characteristics
R0 (13-May 2010)
w w w. c e n t r a l s e m i . c o m
Similar pages