Central CPD91V Switching diode low leakage switching diode chip Datasheet

PROCESS
CPD91V
Central
Switching Diode
Semiconductor Corp.
Low Leakage Switching Diode Chip
PROCESS DETAILS
Process
EPITAXIAL PLANAR
Die Size
11 x 11 MILS
Die Thickness
7.1 MILS
Anode Bonding pad Area
3.4 x 3.4 MILS
Top Side Metalization
Al - 15,000Å
Back Side Metalization
Au - 18,000Å
GEOMETRY
GROSS DIE PER 4 INCH WAFER
94,130
PRINCIPAL DEVICE TYPES
CMPD6001 Series
CMOD6001
CMLD6001
CMLD6001DO
CMDD6001
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
TM
R0 (10- April 2006)
Central
TM
Semiconductor Corp.
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
PROCESS
CPD91V
Typical Electrical Characteristics
R0 (10- April 2006)
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