Ordering number : EN7220B CPH3122 Bipolar Transistor –30V, –3A, Low VCE(sat) PNP Single CPH3 http://onsemi.com Applications • Relay drivers, lamp drivers, motor drivers, flash Features • • • • • • Adoption of MBIT processes Large current capacity Low collector to emitter saturation voltage High-speed switching Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm) High allowable power dissipation Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector to Base Voltage Conditions Ratings Unit VCBO VCEO Collector to Emitter Voltage Emitter to Base Voltage Collector Current (Pulse) VEBO IC ICP Base Current IB Collector Dissipation Junction Temperature PC Tj Storage Temperature Tstg Collector Current --30 V --30 V --5 V --3 A --5 --600 When mounted on ceramic substrate (600mm2×0.8mm) A mA 0.9 W 150 °C --55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7015A-003 • Package : CPH3 • JEITA, JEDEC : SC-59, TO-236, SOT-23 • Minimum Packing Quantity : 3,000 pcs./reel CPH3122-TL-E 0.6 2.9 0.15 Packing Type: TL 0.05 LOT No. 0.2 AT 3 1.6 2.8 Marking 0.9 0.2 0.6 TL 1 0.95 2 0.4 1 : Base 2 : Emitter 3 : Collector CPH3 Electrical Connection 3 1 2 Semiconductor Components Industries, LLC, 2013 November, 2013 N2013 TKIM TC-00003060/N1504 TSIM TB-00000300/41002 TSIM TA-100028,100030 No.7220-1/4 CPH3122 Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current ICBO IEBO hFE Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product VCE= --2V, IC= --500mA VCE= --10V, IC= --500mA VCE(sat)1 Collector to Emitter Saturation Voltage VCE(sat)2 Base to Emitter Saturation Voltage VBE(sat) V(BR)CBO Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Turn-ON Time Storage Time Fall Time min typ Unit max VCB= --30V, IE=0A VEB= --4V, IC=0A fT Cob Output Capacitance Ratings Conditions 200 --0.1 μA --0.1 μA 560 400 VCB= --10V, f=1MHz IC= --1.5A, IB= --30mA MHz 25 IC= --1.5A, IB= --75mA IC= --1.5A, IB= --30mA IC= --10μA, IE=0A pF --180 --270 mV --120 --180 mV --0.83 --1.2 --30 V(BR)CEO V(BR)EBO ton IC= --1mA, RBE=∞ IE= --10μA, IC=0A tstg tf See specified Test Circuit. V V --30 V --5 V 50 ns 270 ns 27 ns Switching Time Test Circuit IB1 PW=20μs D.C.≤1% OUTPUT IB2 INPUT RB VR RL =24Ω 50Ω + 470μF + 100μF VBE=5V VCC= --12V IC=20IB1= --20IB2= --500mA Ordering Information Device CPH3122-TL-E Shipping memo CPH3 3,000pcs./reel Pb Free VCE= --2V --10mA --8mA --1.4 --1.2 --2.5 --6mA --4mA --1.0 --0.8 --2mA --0.6 --0.4 --2.0 --1.5 --1.0 Ta=7 5°C 25°C --25°C mA 0 --2 --50m --1.6 IC -- VBE --3.0 Collector Current, IC -- A A --40mA --1.8 --3 0m A IC -- VCE --2.0 Collector Current, IC -- A Package --0.5 --0.2 IB=0 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Collector to Emitter Voltage, VCE -- V --0.9 --1.0 IT04603 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 Base to Emitter Voltage, VBE -- V --1.2 IT04605 No.7220-2/4 CPH3122 hFE -- IC 1000 DC Current Gain, hFE Gain-Bandwidth Product, f T -- MHz 7 5 Ta=75°C 25°C --25°C 3 2 100 7 5 3 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector to Emitter Saturation Voltage, VCE(sat) -- mV Output Capacitance, Cob -- pF 5 3 2 3 5 7 2 --10 3 Collector to Base Voltage, VCB -- V Collector to Emitter Saturation Voltage, VCE(sat) -- mV 2 3 5 7 --0.1 7 5 3 2 C 75° Ta= °C 5°C 2 --25 2 3 5 7 --1.0 2 3 5 7 --10 IT04609 VCE(sat) -- IC IC / IB=20 3 2 --100 7 °C 75 5 = Ta 3 °C 25° C 5 --2 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 IT04613 VBE(sat) -- IC 3 --1000 3 2 Collector Current, IC -- A VCE(sat) -- IC 7 5 7 IT04611 IC / IB=50 --100 100 --10 --0.01 5 Base to Emitter Saturation Voltage, VBE(sat) -- V 3 2 5 7 2 3 7 f=1MHz 10 --1.0 5 Collector Current, IC -- A Cob -- VCB 100 VCE= --10V 7 5 --0.01 5 7 --10 IT04607 Collector Current, IC -- A f T -- IC 1000 VCE= --2V IC / IB=50 2 --1.0 Ta= --25°C 7 75°C 25°C 5 2 --10 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A DC Collector Dissipation, PC -- W 1m s s op era tio 3 2 n --0.1 7 5 Ta=25°C Single pulse When mounted on ceramic substrate (600mm2✕0.8mm) 3 2 3 5 7 --1.0 2 3 5 7 IT04617 PC -- Ta 0.9 0m 2 7 --0.1 <50μs ms 10 --0.01 --0.1 5 1.0 10 --1.0 7 5 3 2 3 Collector Current, IC -- A SOA ICP= --5A IC= --3A 2 IT04615 μs 100 s 0μ 3 2 3 --0.01 7 50 Collector Current, ID -- A --10 7 5 5 5 7 --1.0 2 3 5 7 --10 2 Collector to Emitter Voltage, VCE -- V W he n 0.8 m ou nt 0.7 ed 0.6 on ce ra m 0.5 ic su bs tra 0.4 te (6 00 0.3 m 0.2 m2 ✕ 0. 8m m 0.1 ) 0 3 5 IT04619 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT04620 No.7220-3/4 CPH3122 Outline Drawing CPH3122-TL-E Land Pattern Example Mass (g) Unit 0.013 mm * For reference Unit: mm 2.4 1.4 0.6 0.95 0.95 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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