CPH3148 Ordering number : ENA0436 SANYO Semiconductors DATA SHEET CPH3148 PNP Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Applications • DC / DC converters, relay drivers, lamp drivers, motor drivers. Features • • • • • • Adoption of FBET, MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall package permitting applied sets to be small and slim (mounting height: 0.9mm). High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO --100 V Collector-to-Emitter Voltage VCES --100 V Collector-to-Emitter Voltage VCEO --100 V Emitter-to-Base Voltage VEBO --7 V IC --2 A --3 A Base Current ICP IB Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Collector Current Collector Current (Pulse) --400 Mounted on a ceramic board (600mm2✕0.8mm) mA 0.9 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO Gain-Bandwidth Product hFE fT Output Capacitance Cob Marking : BP Conditions VCB=--80V, IE=0A VEB=--4V, IC=0A VCE=--5V, IC=--100mA VCE=--10V, IC=--500mA VCB=--10V, f=1MHz Ratings min typ Unit max 200 --1 µA --1 µA 400 260 MHz 20 pF Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 71006EA MS IM TC-00000050 No. A0436-1/4 CPH3148 Continued from preceding page. Parameter Symbol Collector-to-Emitter Saturation Voltage VCE(sat) Base-to-Emitter Saturation Voltage VBE(sat) Collector-to-Base Breakdown Voltage V(BR)CBO Collector-to-Emitter Breakdown Voltage V(BR)CES Collector-to-Emitter Breakdown Voltage V(BR)CEO Emitter-to-Base Breakdown Voltage V(BR)EBO Turn-ON Time Storage Time Fall Time Ratings Conditions min typ IC=--1A, IB=--100mA IC=--1A, IB=--100mA IC=--10µA, IE=0A IC=--100µA, RBE=0Ω Unit max --120 --240 mV --0.85 --1.2 V --100 IC=--1mA, RBE=∞ IE=--10µA, IC=0A V --100 V --100 V --7 V ton tstg See specified Test Circuit. 40 ns See specified Test Circuit. 600 ns tf See specified Test Circuit. 30 ns Package Dimensions Switching Time Test Circuit unit : mm (typ) 7015A-003 0.6 2.9 0.15 3 0.2 INPUT 0.05 1.6 2.8 IB1 PW=20µs D.C.≤1% OUTPUT IB2 VR RB RL 50Ω + + 470µF 2 0.95 0.4 1 : Base 2 : Emitter 3 : Collector VBE=5V VCC= --50V IC= --10IB1=10IB2= --0.5A 0.9 0.2 0.6 220µF 1 SANYO : CPH3 IC -- VCE --140mA --120mA --100mA --80mA --60mA --1.2 --40mA --20mA --0.8 --5mA --0.4 VCE= --5V --1.8 --1.6 --1.4 --1.2 --1.0 --0.8 --0.6 25°C --25°C --1.6 IC -- VBE --2.0 Ta=75°C Collector Current, IC -- A A --160m Collector Current, IC -- A --2.0 --0.4 --0.2 0 0 IB=0mA --0.1 --0.2 --0.3 --0.4 Collector-to-Emitter Voltage, VCE -- V --0.5 IT11133 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 Base-to-Emitter Voltage, VBE -- V --1.2 IT11134 No. A0436-2/4 CPH3148 hFE -- IC 7 VCE(sat) -- IC 5 IC / IB=10 VCE= --5V 5 3 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V DC Current Gain, hFE Ta=75°C 25°C 3 --25°C 2 100 7 5 2 3 5 7 --0.1 2 3 5 7 --1.0 2 Collector Current, IC -- A 7 5°C 5 7 Ta= 3 --25 C 25° °C 2 7 --0.01 3 25°C 75°C 5 3 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 Collector Current, IC -- A 3 2 100 7 5 3 2 7 5 3 2 Collector Current, IC -- A --1.0 7 5 3 2 7 2 3 2 3 5 7 --10 2 3 5 7 --100 Collector-to-Base Voltage, VCB -- V IT11139 5 7 --0.1 2 3 5 7 --1.0 2 3 IT11138 ASO <10µs ICP= --3A 10 IC= --2A ms DC 1m s 10 op 0m s era tio --0.1 7 5 3 2 --0.01 7 5 3 2 10 3 s 0µ 2 2 IT11136 50 3 5 7 --1.0 7 --1.0 µs 100 5 3 5 Collector Current, IC -- A 7 2 3 VCE= --10V IT11137 f=1MHz 5 --0.1 2 fT -- IC 10 --0.01 3 Cob -- VCB 100 7 --0.1 5 Gain-Bandwidth Product, fT -- MHz 7 5 7 2 Ta= --25°C 3 Collector Current, IC -- A IC / IB=10 --1.0 2 IT11135 VBE(sat) -- IC 3 Base-to-Emitter Saturation Voltage, VBE(sat) -- V --0.1 --0.01 3 --0.01 Output Capacitance, Cob -- pF 2 n Ta=25°C Single pulse Mounted on a ceramic board (600mm2✕0.8mm) --0.001 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7 --100 Collector-to-Emitter Voltage, VCE -- V 2 IT11140 PC -- Ta 1.0 Collector Dissipation, PC -- W 0.9 M ou 0.8 nt 0.7 ed on ac er 0.6 am ic 0.5 bo ar d (6 00 0.4 m 0.3 m2 ✕ 0. 8m 0.2 m ) 0.1 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT11141 No. A0436-3/4 CPH3148 Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of July, 2006. Specifications and information herein are subject to change without notice. PS No. A0436-4/4