Sanyo CPH3237 Npn epitaxial planar silicon transistor dc / dc converter application Datasheet

CPH3237
Ordering number : ENN7722A
CPH3237
NPN Epitaxial Planar Silicon Transistor
DC / DC Converter Applications
Applications
•
Relay drivers, lamp drivers, motor drivers, flash.
Features
•
•
•
•
•
•
•
Adoption of MBIT processes.
Large current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
Narrow hFE range.
Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm).
High allowable power dissipation.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
15
V
Collector-to-Emitter Voltage
VCEO
15
V
Emitter-to-Base Voltage
VEBO
6
V
IC
6
A
9
A
Collector Current
Collector Current (Pulse)
Base Current
ICP
IB
Collector Dissipation
PC
Junction Temperature
Tj
Storage Temperature
Tstg
1.2
A
0.9
W
150
°C
--55 to +150
°C
Mounted on a ceramic board (600mm2✕0.8mm)
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
ICBO
IEBO
Gain-Bandwidth Product
hFE
fT
Output Capacitance
Cob
Conditions
VCB=12V, IE=0
VEB=4V, IC=0
VCE=2V, IC=500mA
Ratings
min
typ
max
250
VCE=2V, IC=500mA
VCB=10V, f=1MHz
Unit
0.1
µA
0.1
µA
400
250
MHz
46
pF
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
22004 TS IM / D0503EA TS IM TA-100854 No.7722-1/4
CPH3237
Continued from preceding page.
Parameter
Symbol
Collector-to-Emitter Saturation Voltage
VCE(sat)
Base-to-Emitter Saturation Voltage
VBE(sat)
Collector-to-Base Breakdown Voltage
V(BR)CBO
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
Emitter-to-Base Breakdown Voltage
V(BR)EBO
Turn-ON Time
Storage Time
min
typ
IC=3A, IB=60mA
IC=3A, IB=60mA
IC=10µA, IE=0
IC=1mA, RBE=∞
IE=10µA, IC=0
See specified test circuit.
ton
tstg
Fall Time
Ratings
Conditions
tf
Unit
max
80
120
mV
0.85
1.2
V
15
V
15
V
5
V
32
ns
See specified test circuit.
250
ns
See specified test circuit.
10
ns
Marking : DH
Package Dimensions
Switching Time Test Circuit
unit : mm
2150A
IB1
PW=20µs
D.C.≤1%
2.9
0.4
OUTPUT
IB2
0.2
0.15
INPUT
RB
VR
0.6
3
RL
2
1
2.8
50Ω
+
470µF
+
100µF
0.6
1.6
0.05
VBE= --5V
1 : Base
2 : Emitter
3 : Collector
0.7
0.9
0.2
1.9
VCC=5V
IC=20IB1= --20IB2=3A
SANYO : CPH3
IC -- VCE
6
A
A
5
8mA
3
6mA
2
4mA
1
IB=0
0.4
0.6
0.8
2
0
0
1.0
Collector-to-Emitter Voltage, VCE -- V
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
Base-to-Emitter Voltage, VBE -- V
IT06851
hFE -- IC
7
3
1
2mA
0.2
4
25°C
--25°C
10mA
Ta=75°C
Collector Current, IC -- A
60m
15mA
4
0
0
VCE=2V
20mA
40m
Collector Current, IC -- A
5
IC -- VBE
6
VCE(sat) -- IC
3
VCE=2V
1.0
IT06852
IC / IB=20
2
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
DC Current Gain, hFE
5
Ta=75°C
25°C
3
--25°C
2
0.1
7
5
3
75
=
Ta
2
°C
C
5°
--2
25
°C
0.01
7
100
0.01
2
3
5 7 0.1
2
3
5 7 1.0
Collector Current, IC -- A
2
3
5 7 10
IT06853
5
0.01
2
3
5 7 0.1
2
3
5 7 1.0
Collector Current, IC -- A
2
3
5 7 10
IT06854
No.7722-2/4
CPH3237
VCE(sat) -- IC
3
VBE(sat) -- IC
2
IC / IB=50
IC / IB=50
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
75
°C
--2
5°
C
0.1
7
°C
25
5
Ta
=
3
2
0.01
0.01
2
3
5 7 0.1
2
3
5 7 1.0
2
3
Collector Current, IC -- A
5
2
3
5 7 0.1
2
3
5 7 1.0
2
3
5 7 10
IT06856
Cob -- VCB
f=1MHz
3
Output Capacitance, Cob -- pF
Gain-Bandwidth Product, fT -- MHz
25°C
75°C
100
VCE=2V
2
100
7
5
7
5
3
2
0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
Collector Current, IC -- A
10
7 1.0
2
3
5
7
2
10
3
IT06858
PC -- Ta
1m
0m
s
s
DC
0.9
s
0µ
ms
op
era
tio
3
2
n
0.1
7
5
Ta=25°C
Single pulse
Mounted on a ceramic board (600mm2✕0.8mm)
3
5
1.0
10
2
3
Collector-to-Base Voltage, VCB -- V
100µs
IC=6A
0.01
0.1
2
IT06857
ICP=9A
1.0
7
5
3
2
3
0.1
7
50
3
2
5
ASO
10
7
5
Collector Current, IC -- A
Ta= --25°C
7
Collector Current, IC -- A
fT -- IC
5
1.0
3
0.01
5 7 10
IT06855
Collector Dissipation, PC -- W
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
2
5
7
1.0
2
3
5
7
10
Collector-to-Emitter Voltage, VCE -- V
M
ou
0.8
nt
0.7
ed
on
ac
er
0.6
am
ic
0.5
bo
ar
d
(6
00
0.4
m
0.3
m2
✕
0.
8m
0.2
m
)
0.1
0
2
3
IT06859
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT06860
No.7722-3/4
CPH3237
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
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product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
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Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
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This catalog provides information as of February, 2004. Specifications and information herein are subject
to change without notice.
PS No.7722-4/4
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