Ordering number : ENN7123 CPH3409 N-Channel Silicon MOSFET CPH3409 Ultrahigh-Speed Switching Applications Features • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2152A [CPH3409] 2.9 0.15 0.6 0.4 0.2 • 3 2 1 0.6 1.6 2.8 0.05 1.9 0.7 0.9 0.2 1 : Gate 2 : Source 3 : Drain SANYO : CPH3 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 Gate-to-Source Voltage VGSS ±10 V 5 A Drain Current (DC) ID Drain Current (Pulse) IDP PD Allowable Power Dissipation V PW≤10µs, duty cycle≤1% 20 A Mounted on a ceramic board (900mm2✕0.8mm) 1.2 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage V(BR)DSS IDSS IGSS VGS(off) yfs Forward Transfer Admittance Static Drain-to-Source On-State Resistance RDS(on) RDS(on) Conditions ID=1mA, VGS=0 VDS=30V, VGS=0 Ratings min typ Unit max 30 VGS=±8V, VDS=0 VDS=10V, ID=1mA 0.4 VDS=10V, ID=3A 6.3 ID=3A, VGS=4V ID=1A, VGS=2.5V Marking : KJ V 1 µA ±10 µA 1.3 V 32 42 mΩ 40 56 mΩ 9 S Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N1501 TS IM TA-3080 No.7123-1/4 CPH3409 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Input Capacitance Ciss Output Capacitance Coss VDS=10V, f=1MHz VDS=10V, f=1MHz Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) Rise Time tr td(off) tf Qg See specified Test Circuit. 68 ns VDS=10V, VGS=4V, ID=5A 7.9 nC Gate-to-Source Charge Qgs VDS=10V, VGS=4V, ID=5A 0.9 nC Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=4V, ID=5A 1.7 Diode Forward Voltage VSD IS=5A, VGS=0 0.8 Turn-OFF Delay Time Fall Time Total Gate Charge 630 pF 125 pF VDS=10V, f=1MHz 70 pF See specified Test Circuit. 13 ns See specified Test Circuit. 75 ns See specified Test Circuit. 45 ns nC 1.2 V Switching Time Test Circuit VDD=15V VIN 4V 0V ID=3A RL=5Ω VIN D VOUT PW=10µs D.C.≤1% G CPH3409 50Ω 4 3 2 25° 1 1 VGS=1.0V 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Drain-to-Source Voltage, VDS -- V 0.9 0 0 1.0 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 80 70 3A ID=1A 40 30 20 10 0 0 2 4 6 8 Gate-to-Source Voltage, VGS -- V 0.6 10 IT03818 0.8 1.0 1.2 1.4 1.6 1.8 2.0 IT03817 RDS(on) -- Ta 80 90 50 0.4 Gate-to-Source Voltage, VGS -- V Ta=25°C 60 0.2 IT03816 RDS(on) -- VGS 100 C 2 5 --25° 3 6 C Drain Current, ID -- A 7 25°C 5°C 75°C 5V 1. ID -- VGS VDS=10V °C 2.5V 2.0V 4.0V 3.0V 4 8 Ta= -2 ID -- VDS 5 Drain Current, ID -- A S Ta= 75 P.G 70 60 2.5V S= VG , 1A 4.0V I D= S= A, VG 3 = ID 50 40 30 20 10 0 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- °C 120 140 160 IT03819 No.7123-2/4 CPH3409 C 5° --2 = °C Ta 75 3 2 1.0 7 5 3 2 3 5 7 0.1 2 3 5 7 1.0 2 3 0.5 0.6 0.7 0.8 0.9 1.0 IT03821 Ciss, Coss, Crss -- VDS 1000 VDD=15V VGS=4V 5 0.4 Diode Forward Voltage, VSD -- V SW Time -- ID 7 f=1MHz Ciss 7 3 5 2 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 0.1 7 5 0.01 0.3 5 7 10 IT03820 Drain Current, ID -- A 100 td(off) 7 5 tf 3 tr 2 td(on) 3 2 Coss 100 Crss 7 5 10 7 5 0.1 3 2 3 5 7 2 1.0 3 5 7 0 1.0 IT03822 Drain Current, ID -- A 3 2 Drain Current, ID -- A 8 7 6 5 4 3 2 10 7 5 0 1 2 3 4 5 6 7 8 Total Gate Charge, Qg -- nC 9 IT03824 PD -- Ta 1.4 15 20 25 30 IT03823 ASO IDP=20A <10µs 10 0µ s 1m s ID=5A 10 3 2 DC 1.0 7 5 ms 10 op 0m s era tio n 3 2 Operation in this area is limited by RDS(on). 0.1 7 5 3 2 1 0 10 5 VDS=10V ID=5A 9 5 Drain-to-Source Voltage, VDS -- V VGS -- Qg 10 Gate-to-Source Voltage, VGS -- V 3 2 3 2 2 0.1 0.01 Allowable Power Dissipation, PD -- W 1.0 7 5 --25 °C 5 3 2 5°C °C 25 7 VGS=0 Ta= 7 10 Forward Current, IF -- A Forward Transfer Admittance, yfs -- S VDS=10V 2 IF -- VSD 10 7 5 25° C yfs -- ID 3 Ta=25°C Single pulse Mounted on a ceramic board(900mm2✕0.8mm) 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 5 IT03825 1.2 M ou nt 1.0 ed 0.8 on ac er am ic 0.6 bo ar d( 0.4 90 0m m2 ✕ 0. 8m m 0.2 ) 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT03826 No.7123-3/4 CPH3409 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2001. Specifications and information herein are subject to change without notice. PS No.7123-4/4