Ordering number : ENN7124 CPH3417 N-Channel Silicon MOSFET CPH3417 Ultrahigh-Speed Switching Applications Features • • Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. unit : mm 2152A [CPH3417] 2.9 0.15 0.6 0.4 0.2 • Package Dimensions 3 2 1 0.6 1.6 2.8 0.05 1.9 0.7 0.9 0.2 1 : Gate 2 : Source 3 : Drain SANYO : CPH3 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 20 Gate-to-Source Voltage VGSS ±10 V ID 1.8 A Drain Current (DC) Drain Current (Pulse) IDP PD Allowable Power Dissipation V PW≤10µs, duty cycle≤1% 7.2 A Mounted on a ceramic board (900mm2✕0.8mm) 0.9 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +125 °C Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Ratings min typ Unit max ID=1mA, VGS=0 VDS=20V, VGS=0 VGS=±8V, VDS=0 20 IDSS IGSS VDS=10V, ID=1mA VDS=10V, ID=1A 0.4 Forward Transfer Admittance VGS(off) yfs RDS(on)1 RDS(on)2 ID=1A, VGS=4V ID=0.5A, VGS=2.5V 160 210 mΩ Static Drain-to-Source On-State Resistance 200 280 mΩ RDS(on)3 ID=0.1A, VGS=1.8V 280 390 mΩ Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage V(BR)DSS Conditions 1.9 Marking : KS V 1 µA ±10 µA 1.3 2.8 V S Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N1501 TS IM TA-3356 No.7124-1/4 CPH3417 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Input Capacitance Ciss pF Coss VDS=10V, f=1MHz VDS=10V, f=1MHz 100 Output Capacitance 22 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 15 pF Turn-ON Delay Time td(on) See specified Test Circuit. 5.5 ns Rise Time tr td(off) See specified Test Circuit. 18 ns See specified Test Circuit. 17 ns Turn-OFF Delay Time Fall Time tf Qg Total Gate Charge 8 ns VDS=10V, VGS=10V, ID=1.8A See specified Test Circuit. 4.5 nC 0.4 nC Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=1.8A VDS=10V, VGS=10V, ID=1.8A Diode Forward Voltage VSD IS=1.8A, VGS=0 0.4 nC 0.91 1.2 V Switching Time Test Circuit VDD=10V VIN 4V 0V ID=1A RL=10Ω VIN D VOUT PW=10µs D.C.≤1% G P.G CPH3417 50Ω S 1 0.8 0.4 1.4 1.2 1.0 0.8 Ta= 75° C --25 °C Drain Current, ID -- A 3.0V 1.6 .5V 0.6 0.4 VGS=1.0V °C 75°C Ta= --2 5°C 2.5 V 4.0V 6.0V 1.2 VDS=10V 1.8 10.0V Drain Current, ID -- A 1.6 ID -- VGS 2.0 25 ID -- VDS 2.0 25 °C 0.2 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Drain-to-Source Voltage, VDS -- V 0.9 0 1.0 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 400 0.2 IT02983 1.8 2.0 IT02984 RDS(on) -- Ta 400 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C 350 300 1.0A 250 ID=0.5A 200 150 100 50 0 0 2 4 6 8 Gate-to-Source Voltage, VGS -- V 10 IT02985 350 V =1.8 VGS 1A, 300 0. I D= V =2.5 VGS , A 5 . I D=0 =4.0V , VGS A 0 . I D=1 250 200 150 100 50 0 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- °C 120 140 160 IT03880 No.7124-2/4 yfs -- ID VDS=10V 3 ° 25 C 2 1.0 7 5 C 5° --2 °C = 75 Ta 3 2 0.1 7 5 2 3 5 7 0.1 2 3 5 7 1.0 2 3 0.01 0.2 5 7 10 IT02987 0.6 0.7 0.8 0.9 1.0 1.1 1.2 IT02988 f=1MHz tr Ciss, Coss, Crss -- pF 5 td(off) 2 10 tf 7 td(on) 5 3 2 Ciss 100 7 5 3 3 2 2 Coss Crss 10 2 3 5 7 2 1.0 3 Drain Current, ID -- A 5 0 10 7 5 3 2 Drain Current, ID -- A 8 7 6 5 4 3 2 0 2 3 4 5 Total Gate Charge, Qg -- nC IT02991 6 8 10 12 14 16 18 20 IT02990 ASO <10µs 1 0 1m 0µs s 10 ms 10 0m s IDP=7.2A ID=1.8A 1.0 7 5 DC op era tio 3 2 n Operation in this area is limited by RDS(on). 0.1 7 5 3 2 1 1 4 Drain-to-Source Voltage, VDS -- V VDS=10V ID=1.8A 0 2 IT02989 VGS -- Qg 10 9 0.5 7 3 1.0 0.1 0.4 Ciss, Coss, Crss -- VDS 1000 VDD=10V VGS=4V 5 0.3 Diode Forward Voltage, VSD -- V SW Time -- ID 7 Switching Time, SW Time -- ns 2 0.1 7 5 2 100 Gate-to-Source Voltage, VGS -- V 3 3 Drain Current, ID -- A Ta=25°C Single pulse Mounted on a ceramic board(900mm2✕0.8mm) 0.01 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 IT03881 PD -- Ta 1.0 Allowable Power Dissipation, PD -- W 1.0 7 5 2 5 70.01 VGS=0 3 2 3 0.01 0.001 2 3 IF -- VSD 10 7 5 Ta= 75° C 25° --25 C °C 10 7 5 Forward Current, IF -- A Forward Transfer Admittance, yfs -- S CPH3417 0.9 M ou 0.8 nt ed on ac er 0.6 am ic bo ar d( 90 0m 0.4 m2 ✕ 0. 8m m 0.2 ) 0 0 20 40 60 80 100 120 Ambient Tamperature, Ta -- °C 140 160 IT03879 No.7124-3/4 CPH3417 Note on usage : Since the CPH3417 is designed for high-speed switching applications, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2001. Specifications and information herein are subject to change without notice. PS No.7124-4/4