CPH5617 Ordering number : EN7370B SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET CPH5617 General-Purpose Switching Device Applications Features • • • • Low ON-resistance Ultrahigh-speed switching 1.5V drive Composite type with 2 MOSFETs contained in the one package, improving the mounting efficiency greatly Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings Unit VDSS VGSS Gate-to-Source Voltage Drain Current (DC) 30 ID IDP Drain Current (Pulse) Allowable Power Dissipation PW≤10μs, duty cycle≤1% V ±10 V 150 mA 600 mA 0.25 W Channel Temperature PD Tch 150 °C Storage Temperature Tstg --55 to +150 °C This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model Product & Package Information unit : mm (typ) 7017A-004 • Package : CPH5 • JEITA, JEDEC : SC-74A, SOT-25 • Minimum Packing Quantity : 3,000 pcs./reel 4 CPH5617-TL-E 0.15 2.9 5 3 Packing Type : TL Marking LOT No. FZ 0.05 1.6 2.8 0.2 0.6 Package Dimensions 0.9 0.2 0.6 TL 1 2 0.95 0.4 1 : Drain1 2 : Drain2 3 : Gate2 4 : Source 5 : Gate1 Electrical Connection 5 4 3 SANYO : CPH5 1 2 http://semicon.sanyo.com/en/network 71112 TKIM/N1109PE TKIM/90503 TSIM TA-3722 No.7370-1/7 CPH5617 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Conditions Ratings min typ max 30 ID=1mA, VGS=0V VDS=30V, VGS=0V Unit V 10 μA ±10 μA Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) VGS=±8V, VDS=0V VDS=10V, ID=100μA 0.4 Forward Transfer Admittance | yfs | VDS=10V, ID=80mA 0.15 RDS(on)1 ID=80mA, VGS=4V 2.9 3.7 Ω RDS(on)2 ID=40mA, VGS=2.5V 3.7 5.2 Ω RDS(on)3 ID=10mA, VGS=1.5V 6.4 12.8 Static Drain-to-Source On-State Resistance Input Capacitance Ciss 1.3 0.22 V S Ω 7.0 pF Output Capacitance Coss 5.9 pF Reverse Transfer Capacitance Crss 2.3 pF Turn-ON Delay Time 19 ns Rise Time td(on) tr 65 ns Turn-OFF Delay Time td(off) 155 ns Fall Time tf 120 ns Total Gate Charge Qg 1.58 nC 0.26 nC Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=10V, f=1MHz See specified Test Circuit. VDS=10V, VGS=10V, ID=150mA 0.31 IS=150mA, VGS=0V 0.87 nC 1.2 V Switching Time Test Circuit VDD=15V 4V 0V VIN ID=80mA RL=187.5Ω VIN VOUT D PW=10μs D.C.≤1% G P.G 50Ω S CPH5617 Ordering Information Device CPH5617-TL-E Package Shipping memo CPH5 3,000pcs./reel Pb Free No.7370-2/7 CPH5617 0.08 VGS=1.5V 0.06 0.04 C --25 ° 0.20 75 °C 6.0 V 0.10 Ta= 0.25 Drain Current, ID -- A V 3.0 4.0V 0.12 V 2.0 2. 3.5V 5V VDS=10V 0.14 Drain Current, ID -- A ID -- VGS 0.30 25 °C ID -- VDS 0.16 0.15 0.10 0.05 0.02 0 0 0 0.6 0.4 0.2 0.8 0 1.0 Drain-to-Source Voltage, VDS -- V 1.0 1.5 2.0 2.5 3.0 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 10 0.5 IT00029 RDS(on) -- ID 10 Ta=25°C IT00030 VGS=4V Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 9 8 7 80mA 6 5 ID=40mA 4 3 2 1 1 2 3 4 5 7 6 8 9 Gate-to-Source Voltage, VGS -- V Ta=75°C 25°C --25°C 3 2 2 3 5 7 2 0.1 3 Drain Current, ID -- A 1 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- °C 120 140 160 IT00035 7 2 0.1 3 5 IT00032 RDS(on) -- ID VGS=1.5V 5 3 2 10 Ta=75°C 7 --25°C 5 25°C 3 2 1.0 0.001 2 3 5 7 2 0.01 Drain Current, ID -- A Forward Transfer Admittance, yfs -- S 5 =2. mA =80 V GS , ID V 0 . =4 VGS 2 0 --60 5 3 IT00034 yfs -- ID 1.0 mA 3 3 IT00033 =40 V, I D 4 2 7 5 6 5 --25°C 2 100 RDS(on) -- Ta 7 25°C 3 Drain Current, ID -- A Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 7 5 Ta=75°C IT00031 VGS=2.5V 1.0 0.01 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 10 RDS(on) -- ID 10 5 1.0 0.01 0 0 7 VDS=10V 7 5 3 25°C -Ta= 2 75°C 0.1 25°C 7 5 3 2 0.01 0.01 2 3 5 7 0.1 Drain Current, ID -- A 2 3 5 IT00036 No.7370-3/7 CPH5617 IS -- VSD 5 Switching Time, SW Time -- ns 5 --25 ° 7 C Ta= 75 °C 25° C Source Current, IS -- A 2 3 2 0.01 0.5 0.6 0.7 0.8 0.9 1.0 1.1 Diode Forward Voltage, VSD -- V td(off) tf 2 100 7 tr 5 3 td(on) 2 2 10 Ciss 5 Coss 3 Crss 3 2 5 7 2 0.1 IT00038 VGS -- Qg 10 Gate-to-Source Voltage, VGS -- V 3 7 2 Drain Current, ID -- A VDS=10V ID=150mA 9 5 Ciss, Coss, Crss -- pF 3 IT00037 f=1MHz 7 5 10 0.01 1.2 Ciss, Coss, Crss -- VDS 100 VDD=15V VGS=4V 7 3 0.1 SW Time -- ID 1000 VGS=0V 8 7 6 5 4 3 2 1 1.0 0 0 2 4 6 8 10 12 14 16 Drain-to-Source Voltage, VDS -- V 20 IT00039 0 0.2 0.4 0.6 0.8 1.0 1.2 Total Gate Charge, Qg -- nC 1.4 1.6 IT00040 PD -- Ta 0.30 Allowable Power Dissipation, PD -- W 18 0.25 0.20 0.15 0.10 0.05 0 0 20 40 60 80 100 120 Amibient Temperature, Ta -- °C 140 160 IT01962 No.7370-4/7 CPH5617 Embossed Taping Specification CPH5617-TL-E No.7370-5/7 CPH5617 Outline Drawing CPH5617-TL-E Land Pattern Example Mass (g) Unit 0.02 mm * For reference Unit: mm 2.4 1.4 0.6 0.95 0.95 No.7370-6/7 CPH5617 Note on usage : Since the CPH5617 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a confirmation. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of July, 2012. Specifications and information herein are subject to change without notice. PS No.7370-7/7