Ordering number : ENN6981 CPH5805 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5805 DC / DC Converter Applications Features Package Dimensions Composite type with an N-Channel Sillicon MOSFET unit : mm (MCH3412) and a Schottky Barrier Diode (SBS006) 2171 contained in one package facilitating high-density mounting. [MOSFET] • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. [SBD] • Short reverse recovery time. • Low forward voltage. • 4 0.15 3 2.8 0.05 0.6 1.6 0.6 5 0.2 [CPH5805] 2.9 1 2 0.4 1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode 0.9 0.7 0.2 0.95 SANYO : CPH5 0.4 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit [MOSFET] Drain-to-Source Voltage VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID 30 V ±20 V 3 A Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% 12 A Allowable Power Dissipation PD Mounted on a ceramic board (600mm2✕0.8mm) 1unit 0.9 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +125 °C VRRM VRSM 30 V 30 V Average Output Current IO 0.5 A Surge Forward Current IFSM 10 A [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage 50Hz sine wave, 1 cycle Junction Temperature Tj --55 to +125 °C Storage Temperature Tstg --55 to +125 °C Marking : QF Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 62001 TS IM TA-3173 No.6981-1/5 CPH5805 Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions min typ Unit max [MOSFET] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current V(BR)DSS IDSS ID=1mA, VGS=0 VDS=30V, VGS=0 IGSS VGS(off) VGS=±16V, VDS=0 VDS=10V, ID=1mA 1.2 yfs RDS(on)1 VDS=10V, ID=1.5A 2.1 Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance 30 V 1 µA ±10 µA 2.6 V 3 S 64 84 mΩ RDS(on)2 Ciss ID=1.5A, VGS=10V ID=1A, VGS=4V 105 150 mΩ VDS=10V, f=1MHz 180 pF Output Capacitance Coss VDS=10V, f=1MHz 42 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 25 pF Turn-ON Delay Time td(on) See specified Test Circuit 7 ns Rise Time tr td(off) See specified Test Circuit 28 ns See specified Test Circuit 18.5 ns tf See specified Test Circuit 4.4 ns Static Drain-to-Source On-State Resistance Input Capacitance Turn-OFF Delay Time Fall Time Total Gate Charge Qg nC Qgs VDS=10V, VGS=10V, ID=3A VDS=10V, VGS=10V, ID=3A 4.9 Gate-to-Source Charge 0.93 nC Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=3A 0.63 Diode Forward Voltage VSD IS=3A, VGS=0 0.85 1.2 V VR VF 1 IR=0.5mA IF=0.3A 0.35 0.4 V VF 2 0.47 V 200 µA Interterminal Capacitance IF=0.5A VR=10V VR=10V, f=1MHz cycle 0.42 IR C Reverse Recovery Time trr IF=IR=100mA nC [SBD] Reverse Voltage Forward Voltage Reverse Current 30 V 20 pF 10 ns Electrical Connection (Top view) 4 3 1 1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode 2 Switching Time Test Circuit trr Test Circuit [MOSFET] [SBD] VDD=15V VIN Duty≤10% D VOUT PW=10µs D.C.≤1% 50Ω 100Ω 10Ω 100mA ID=1A RL=15Ω VIN 10µs --5V G P.G 100mA 10V 0V 10mA 5 50Ω trr S CPH5805 (MOSFET) No.6981-2/5 CPH5805 ID -- VDS 3.5 VGS=2.5V 1.2 2.0 1.5 1.0 0.8 25 °C 0.5 0.4 --25°C 1.6 2.5 °C 2.0 3.0 Ta=7 5 V 3.0 V 2.4 Drain Current, ID -- A 8.0V 2.8 [MOSFET] VDS=10V 10.0 Drain Current, ID -- A 3.2 ID -- VGS 4.0 6.0V 3.6 [MOSFET] 4.0 V 5.0V 4.0 0 0 0.2 0.1 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 1.0 Drain-to-Source Voltage, VDS -- V IT02931 RDS(on) -- VGS [MOSFET] 250 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Gate-to-Source Voltage, VGS -- V IT02932 RDS(on) -- Ta [MOSFET] 250 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ ID=1.5A 50 0 0 2 4 8 10 12 14 16 18 Forward Current, IF -- A 25° 2 C C 5° 1.0 = Ta 7 --2 75 °C 5 3 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 Drain Current, ID -- A 3 0 [MOSFET] 40 60 80 100 120 140 160 IT02934 [MOSFET] VGS=0 1.0 7 5 3 2 0.1 7 5 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 Diode Forward Voltage, VSD -- V IT02936 Ciss, Coss, Crss -- VDS [MOSFET] 1000 VDD=15V VGS=10V f=1MHz 7 5 3 td(off) 2 10 td(on) 7 5 tf 3 tr 3 Ciss 2 100 7 5 Coss 3 2 1.0 0.1 20 3 2 0.01 0.2 5 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns --20 IF -- VSD IT02935 SW Time -- ID 100 5 --40 3 2 2 7 50 10 7 5 5 3 10V , V GS= A I D=1.5 Ambient Temperature, Ta -- °C VDS=10V 7 100 0 --60 20 Gate-to-Source Voltage, VGS -- V IT02933 yfs -- ID [MOSFET] 10 Forward Transfer Admittance, yfs -- S 6 =4V VGS , 1.0A I D= --25°C 100 150 C 1.0A 150 200 25°C 200 Ta=7 5° Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C Crss 2 10 2 3 5 7 1.0 2 Drain Current, ID -- A 3 5 7 10 IT02937 0 5 10 15 20 25 Drain-to-Source Voltage, VDS -- V 30 IT02938 No.6981-3/5 CPH5805 VGS -- Qg 10 6 5 4 3 3 2 3 4 5 Allowable Power Dissipation, PD -- W 10 s 0m op s er ati on Operation in this area is limited by RDS(on). Ta=25°C Single pulse Mounted on a ceramic board(600mm2✕0.8mm) 1unit 2 3 5 7 0.1 IT02939 PD -- Ta 1.2 DC 0.01 0.01 6 Total Gate Charge, Qg -- nC m 3 2 1 2 s 10 1.0 7 5 0.1 7 5 1 1m ID=3A 3 2 2 0 <10µs 100µs Drain Current, ID -- A 7 [MOSFET] IDP=12A 10 7 5 8 0 ASO 3 2 VDS=10V ID=3A 9 Gate-to-Source Voltage, VGS -- V [MOSFET] 2 3 5 7 1.0 2 3 5 7 10 2 3 5 Drain-to-Source Voltage, VDS -- V IT02940 IR -- VR [SBD] [MOSFET] 1.0 M 0.9 ou nte do 0.8 na ce ram ic 0.6 bo ard (6 00 mm 0.4 2 ✕0 .8m m) 0.2 1u nit 0 0 20 60 40 80 100 120 140 160 Ambient Temperature, Ta -- °C IT02941 IF -- VF [SBD] 10 100 7 5 3 2 Reverse Current, IR -- mA 3 2 1.0 = Ta 0° C 7 5 3 2 5°C 12 °C 25 50 ° C 10 0.1 7 5 75 °C Forward Current, IF -- A 7 5 3 2 °C 125 Ta= 100°C 75°C 1.0 7 5 3 2 50°C 0.1 7 5 3 2 25°C 0.01 0.01 0.2 0.6 0.4 0.8 Diode Forward Voltage, VSD -- V (1) Rectangular wave θ=60° (2) Rectangular wave θ=120° (3) Rectangular wave θ=180° (4) Sine wave θ=180° 0.35 0.3 (4) 0.2 Rectangular wave 0.15 θ 0.1 360° Sine wave 0.05 0 0.1 0.2 0.3 15 20 25 0.4 180° 360° 0.5 Average Forward Current, IO -- A 0.6 0.7 IT00634 30 IT00633 C -- VR 100 [SBD] f=1MHz 7 (3) 0.25 0 10 Reverse Voltage, VR -- V [SBD] (2) (1) 5 IT00632 PF(AV) -- IO 0.4 0 1.0 Interterminal Capacitance, C -- pF 0 Average Forward Power Dissipation, PF(AV) -- W 10 7 5 3 2 5 3 2 10 7 5 3 2 1.0 1.0 2 3 5 7 10 2 Reverse Voltage, VR -- V 3 5 7 100 IT00635 No.6981-4/5 CPH5805 IS -- t Surge Forward Current, IFSM(Peak) -- A 12 [SBD] Current waveform 50Hz sine wave IS 10 20ms t 8 6 4 2 0 7 0.01 2 3 5 7 0.1 2 Time, t -- s 3 5 7 1.0 2 3 IT00636 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2001. Specifications and information herein are subject to change without notice. PS No.6981-5/5