Ordering number : ENN7381 CPH5815 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5815 DC / DC Converter Applications 4 0.15 3 0.6 5 0.2 [CPH5815] 2.9 0.05 1 2 0.95 0.4 1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode 0.9 0.7 0.2 • Composite type with a P-Channel Sillicon MOSFET unit : mm (MCH3317) and a Schottky Barrier Diode (SBS007M) 2171 contained in one package facilitating high-density mounting. [MOS] 1) Low ON-resistance. 2) Ultrahigh-speed switching. 3) 1.8V drive. [SBD] 1) Short reverse recovery time. 2) Low forward voltage. 2.8 • Package Dimensions 1.6 • 0.6 Features SANYO : CPH5 0.4 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS VGSS --12 V ±10 V ID --1.5 A IDP PD Allowable Power Dissipation PW≤10µs, duty cycle≤1% Mounted on a ceramic board (600mm2✕0.8mm) 1unit --6.0 A 0.8 W Channel Temperature Tch --150 °C Storage Temperature Tstg --55 to +125 °C VRRM VRSM 15 V 15 V Average Output Current IO 0.5 A Surge Forward Current 3 A Junction Temperature IFSM Tj --55 to +125 °C Storage Temperature Tstg --55 to +125 °C [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage 50Hz sine wave, 1 cycle Marking : QR Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N2603 TS IM TA-3785 No.7381-1/5 CPH5815 Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions min typ max Unit [MOSFET] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance V(BR)DSS IDSS ID=--1mA, VGS=0 VDS=--12V, VGS=0 IGSS VGS(off) VGS=±8.0V, VDS=0 VDS=--6V, ID=--1mA --0.3 yfs RDS(on)1 VDS=--6V, ID=--0.8A 1.3 RDS(on)2 RDS(on)3 --12 V --10 µA ±10 µA --1.0 V 1.8 S ID=--0.8A, VGS=--4.5V ID=--0.4A, VGS=--2.5V 220 290 mΩ 320 450 mΩ 430 650 mΩ Input Capacitance Ciss ID=--0.1A, VGS=--1.8V VDS=--6V, f=1MHz Output Capacitance Coss Reverse Transfer Capacitance 160 pF VDS=--6V, f=1MHz 45 pF Crss VDS=--6V, f=1MHz 35 pF Turn-ON Delay Time td(on) See specified Test Circuit. 11 ns Rise Time tr td(off) See specified Test Circuit. 45 ns See specified Test Circuit. 29 ns tf See specified Test Circuit. 30 ns Qg VDS=--6V, VGS=--4.5V, ID=--1.5A 2.6 nC Gate-to-Source Charge Qgs nC Qgd VDS=--6V, VGS=--4.5V, ID=--1.5A VDS=--6V, VGS=--4.5V, ID=--1.5A 0.25 Gate-to-Drain “Miller” Charge Diode Forward Voltage VSD IS=--1.5A, VGS=0 VR VF 1 IR=0.5mA IF=0.3A VF 2 Interterminal Capacitance IR C IF=0.5A VR=6V VR=10V, f=1MHz cycle Reverse Recovery Time trr IF=IR=100mA, see specified Test Circuit. Turn-OFF Delay Time Fall Time Total Gate Charge 0.65 nC --0.92 --1.5 V 0.35 0.41 V 0.4 0.46 V 200 µA [SBD] Reverse Voltage Forward Voltage Reverse Current 15 V 20 pF 10 ns Electrical Connection 5 4 3 1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode (Top view) 2 Switching Time Test Circuit trr Test Circuit [MOSFET] [SBD] VDD= --6V VIN Duty≤10% 100mA 0V --4.5V ID= --0.8A RL=7.5Ω D VOUT PW=10µs D.C.≤1% 50Ω 100Ω 10Ω 100mA VIN 10mA 1 10µs --5V G trr CPH5815(MOSFET) P.G 50Ω S No.7381-2/5 CPH5815 ID -- VGS V --1.8 --1.5V --0.6 --1.5 --1.0 Ta= 75° C 25° --2 5 C °C Drain Current, ID -- A Drain Current, ID -- A --1.2 --0.5 --0.3 VGS= --1.0V 0 0 0 --0.1 --0.2 --0.3 --0.4 0 --0.5 Drain-to-Source Voltage, VDS -- V IT04353 RDS(on) -- VGS [MOSFET] 800 75° C --4 .5 V V V .5 -3.0 2.5V -- --3 --0.9 [MOSFET] VDS= --6V C --2.0 25° [MOSFET] Ta= --25 °C ID -- VDS --1.5 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 Gate-to-Source Voltage, VGS -- V IT04354 RDS(on) -- Ta [MOSFET] 800 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 700 600 --0.8A 500 ID= --0.4A 400 300 200 100 --1 --3 --4 --5 --6 --8 400 300 200 100 --40 --20 0 20 40 60 80 IF -- VSD 5 100 120 140 160 IT04356 [MOSFET] VGS=0 3 3 C 5° --2 = °C Ta 75 1.0 7 5 3 2 2 --1.0 7 5 3 --25°C °C 25 25°C Forward Current, IF -- A 2 2 2 3 5 7 --0.1 2 3 5 Drain Current, ID -- A SW Time -- ID 3 2 8V = --1. , VGS A 1 . 0 V I D= -= --2.5 A, V GS .4 0 -I D= = --4.5V A, V GS .8 0 -= ID 500 Ambient Temperature, Ta -- °C VDS= --6V 0.1 --0.01 7 --1.0 2 --0.1 --0.4 3 [MOSFET] 5 VDD= --6V VGS= --4.5V --0.6 --0.8 --1.0 --1.2 --1.4 Diode Forward Voltage, VSD -- V IT04358 Ciss, Coss, Crss -- VDS [MOSFET] IT04357 f=1MHz 3 100 2 7 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns --7 Gate-to-Source Voltage, VGS -- V IT04355 yfs -- ID [MOSFET] 5 Forward Transfer Admittance, yfs -- S --2 600 0 --60 0 0 700 Ta=7 5°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C tr 5 td(off) tf 3 2 td(on) 10 7 5 Ciss 100 7 5 Coss 3 Crss 2 3 2 --0.1 10 2 3 5 7 --1.0 Drain Current, ID -- A 2 3 IT04359 0 --2 --4 --6 --8 --10 Drain-to-Source Voltage, VDS -- V --12 IT04360 No.7381-3/5 CPH5815 VGS -- Qg --4.5 --10 7 5 VDS= --6V ID= --1.5A --4.0 2 --3.0 --2.5 --2.0 --1.5 --1.0 [MOSFET] <10µs 1m 0 0.5 1.0 1.5 2.0 2.5 Total Gate Charge, Qg -- nC s tio Operation in this area is limited by RDS(on). n --0.1 7 5 Ta=25°C Single pulse Mounted on a ceramic board(600mm2✕0.8mm)1unit 2 3 5 7 --1.0 2 3 5 7 --10 2 IT05251 Drain-to-Source Voltage, VDS -- V IT04361 PD -- Ta 1.0 0m op era --0.01 --0.1 3.0 10 DC 2 2 0 ms ID= --1.5A 3 s 10 --1.0 7 5 3 --0.5 Allowable Power Dissipation, PD -- W ASO IDP= --6.0A 3 --3.5 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V [MOSFET] [MOSFET] M 0.8 ou nt ed on 0.6 ac er am ic bo ar 0.4 d( 60 0m m2 ✕0 .8m 0.2 m )1 un it 0 0 20 60 40 80 100 120 140 160 Ambient Temperature, Ta -- °C IT05252 IF -- VF [SBD] 2 1.0 Reverse Current, IR -- mA °C 100 3 C °C 75 5° 2 Ta =1 2 0.1 50 °C 7 5 C Forward Current, IF -- A 7 5 2 0.01 0.1 0.2 0.3 0.4 Average Forward Power Dissipation, PF(AV) -- W 0.3 (2) (4) (3) 0.2 Rectangular wave 0.15 θ 0.1 Sine wave 360° 0.05 0 0 0.1 0.2 0.3 75°C 50°C 0.1 7 5 3 2 25°C 5 10 0.4 180° 360° 0.5 Average Forward Current, IO -- A 0.6 0.7 IT02914 15 Reverse Voltage, VR -- V IT02913 C -- VR [SBD] 100 f=1MHz 7 (1) 0.25 1.0 7 5 3 2 0 [SBD] (1) Rectangular wave θ=60° (2) Rectangular wave θ=120° (3) Rectangular wave θ=180° (4) Sine wave θ=180° 0.35 100°C IT02912 PF(AV) -- IO 0.4 Ta=125°C 10 7 5 3 2 0.5 Forward Voltage, VF -- V Interterminal Capacitance, C -- pF 0 [SBD] 0.01 7 5 3 2 0.001 25° 3 IR -- VR 100 7 5 3 2 5 3 2 10 7 5 3 2 1.0 1.0 2 3 5 7 10 Reverse Voltage, VR -- V 2 3 IT02915 No.7381-4/5 CPH5815 IFSM -- t Surge Forward Current, IFSM(Peak) -- A 12 [SBD] Current waveform 50Hz sine wave IS 10 20ms t 8 6 4 2 0 7 0.01 2 3 5 7 0.1 2 3 Time, t -- s 5 7 1.0 2 3 IT00636 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2003. Specifications and information herein are subject to change without notice. PS No.7381-5/5