ON CPH6102 Bipolar transisitor -50v, -1a, low vce(sat) pnp single cph6 Datasheet

Ordering number : EN5810A
CPH6102
Bipolar Transisitor
–50V, –1A, Low VCE(sat) PNP Single CPH6
http://onsemi.com
Applications
•
DC-DC converter, relay drivers, lamp drivers, motor drivers, strobes
Features
•
•
•
•
•
•
Adoption of FBET, MBIT processes
Large current capacity
Low collector to emitter saturation voltage
High-speed switching
Ultrasmall package permitting applied sets to be made small and slim (0.9mm)
High allowable power dissipation
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector to Base Voltage
Conditions
Ratings
VCBO
VCEO
Collector to Emitter Voltage
Emitter to Base Voltage
VEBO
IC
ICP
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
PC
Tj
Storage Temperature
Tstg
When mounted on ceramic substrate (600mm2×0.8mm)
Unit
--60
V
--50
V
--5
V
--1.0
A
--2
A
1.3
W
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
7018A-002
• Package
: CPH6
• JEITA, JEDEC
: SC-74, SOT-26, SOT-457
• Minimum Packing Quantity : 3,000 pcs./reel
4
Packing Type: TL
Marking
0.9
1
2
0.95
LOT No.
AB
0.05
1.6
0.2
0.6
2.8
0.2
0.6
5
CPH6102-TL-E
0.15
2.9
6
TL
3
0.4
1 : Collector
2 : Collector
3 : Base
4 : Emitter
5 : Collector
6 : Collector
Electrical Connection
1, 2, 5, 6
3
CPH6
4
Semiconductor Components Industries, LLC, 2013
November, 2013
N1313 TKIM TC-00002831/D1099TS (KOTO) TA-1949 No.5810-1/4
CPH6102
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
ICBO
IEBO
hFE1
VCB= --50V, IE=0A
VEB= --4V, IC=0A
VCE= --2V, IC= --100mA
hFE2
VCE= --2V, IC= --1A
VCE= --10V, IC= --50mA
fT
Cob
Output Capacitance
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Emitter to Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
typ
max
200
Unit
--100
nA
--100
nA
560
30
150
MHz
12
IC= --500mA, IB= --50mA
IC= --10μA, IE=0A
IC= --1mA, RBE=∞
V(BR)CBO
V(BR)CEO
Collector to Emitter Breakdown Voltage
min
VCB= --10V, f=1MHz
IC= --500mA, IB= --50mA
VCE(sat)
VBE(sat)
Collector to Base Breakdown Voltage
Ratings
Conditions
V(BR)EBO
ton
IE= --10μA, IC=0A
tstg
tf
See specified Test Circuit.
pF
--180
--500
--0.9
--1.2
mV
V
--60
V
--50
V
--5
V
40
ns
300
ns
30
ns
Switching Time Test Circuit
IB1
PW=20μs
D.C.≤1%
INPUT
OUTPUT
IB2
RB
VR
RL
50Ω
+
+
100μF
470μF
VBE=5V
VCC= --25V
IC=10IB1= --10IB2= --500mA
Ordering Information
Device
CPH6102-TL-E
Shipping
memo
CPH6
3,000pcs./reel
Pb Free
IC -- VCE
mA
--10
--0.8
VCE= --2V
--8mA
--1000
--6mA
--4mA
--0.6
--2mA
--0.4
--1mA
--0.2
--800
--600
--400
Ta=7
5°C
25°C
--25°C
A
2m
--1
IC -- VBE
--1200
Collector Current, IC -- mA
--1.0
Collector Current, IC -- A
Package
--200
IB=0mA
0
0
--1
--2
--3
--4
Collector to Emitter Voltage, VCE -- V
0
--5
IT16938
0
--0.2
--0.4
--0.6
--0.8
--1.0
Base to Emitter Voltage, VBE -- V
--1.2
IT16939
No.5810-2/4
CPH6102
hFE -- IC
1000
5
Ta=75°C
DC Current Gain, hFE
3
VCE= --10V
Gain-Bandwidth Product, f T -- MHz
7
25°C
2
--25°C
100
7
5
3
2
10
f T -- IC
5
VCE= --2V
7
5
3
2
100
7
5
3
2
10
5 7 --10
2
3
5
7 --100
2
3
5
7--1000
Collector Current, IC -- mA
2
5
3
7
2
--10
Cob -- VCB
5
3
5
7 --100
2
3
Collector Current, IC -- mA
IT16940
5
IT16941
VCE(sat) -- IC
IC / IB=10
f=1MHz
Collector to Emitter
Saturation Voltage, VCE(sat) -- mV
Output Capacitance, Cob -- pF
--1000
3
2
10
7
5
2
3
2
°C
25
C
75°
Ta=
7
5
5°C
--2
3
2
--10
5
7 --1.0
2
3
5
7 --10
2
3
5
Collector to Base Voltage, VCB -- V
7 --100
IT16942
5
Collector Current, IC -- A
25°C
75°C
7
2
3
5
7 --100
2
3
5
Collector Current, IC -- mA
7 --1000
2
IT16944
PC -- Ta
1.4
C
3
2
5
7 --1000
2
IT16943
op
er
at
io
n.
--0.1
7
2
5 7 --10
10
10 ms
0m
s
D
5
3
0
3
10μs
IC= --1A
--1.0
5
3
2
μs
100
2
7 --100
s
1m
3
5
5
ASO
5
7
3
ICP= --2A
2
7
Ta= --25°C
2
3
IC / IB=10
--1.0
7 --10
Collector Current, IC -- mA
VBE(sat) -- IC
--10
Base to Emitter
Saturation Voltage, VBE(sat) -- mV
5
--100
3
Collector Dissipation, PC -- W
7
Ta=25°C
Single pulse
When mounted on ceramic substrate (600mm2×0.8mm)
2
3
5
7 --1.0
2
3
5
7 --10
2
3
Collector to Emitter Voltage, VCE -- V
5
7
IT16945
When mounted on ceramic substrate
(600mm2×0.8mm)
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT16946
No.5810-3/4
CPH6102
Outline Drawing
CPH6102-TL-E
Land Pattern Example
Mass (g) Unit
0.015 mm
* For reference
Unit: mm
2.4
1.4
0.6
0.95
0.95
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PS No.5810-4/4
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