Ordering number : ENN7018 CPH6315 P-Channel Silicon MOSFET CPH6315 High-Speed Switching Applications Features • • Package Dimensions Low ON-resistance. High-speed switching. 2.5V drive. unit : mm 2151A [CPH6315] 0.15 2.9 5 4 0.6 6 0.2 • 0.6 1.6 2.8 0.05 3 0.95 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain 0.2 2 0.7 0.9 1 0.4 Specifications SANYO : CPH6 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --20 Gate-to-Source Voltage VGSS ±10 V --3 A Drain Current (DC) ID Drain Current (Pulse) IDP PD Allowable Power Dissipation V PW≤10µs, duty cycle≤1% --12 A Mounted on a ceramic board (1200mm2✕0.8mm) 1.6 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance V(BR)DSS Conditions Ratings min typ ID=--1mA, VGS=0 VDS=--20V, VGS=0 VGSS=±8V, VDS=0 --20 VGS(off) yfs VDS=--10V, ID=--1mA VDS=--10V, ID=--1A --0.3 RDS(on)1 RDS(on)2 ID=--1A, VGS=--4V ID=--0.5A, VGS=--2.5V IDSS IGSS 2.1 Marking : JR max Unit V --10 µA ±10 µA --1.4 V 115 150 mΩ 145 210 mΩ 3 S Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 73001 TS IM TA-3310 No.7018-1/4 CPH6315 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Input Capacitance Ciss pF Coss VDS=--10V, f=1MHz VDS=--10V, f=1MHz 410 Output Capacitance 60 pF Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 40 pF Turn-ON Delay Time td(on) See specified Test Circuit. 9 ns Rise Time tr td(off) See specified Test Circuit. 27 ns See specified Test Circuit. 42 ns tf See specified Test Circuit. 38 ns Qg VDS=--10V, VGS=--4V, ID=--2A 4.5 nC Gate-to-Source Charge Qgs nC Qgd VDS=--10V, VGS=--4V, ID=--2A VDS=--10V, VGS=--4V, ID=--2A 0.6 Gate-to-Drain “Miller” Charge Diode Forward Voltage VSD IS=--2A, VGS=0 Turn-OFF Delay Time Fall Time Total Gate Charge 1.2 nC --0.88 --1.2 V Switching Time Test Circuit VDD= --10V VIN 0V --4V ID= --1A RL=10Ω VIN D VOUT PW=10µs D.C.≤1% G CPH6315 S ID -- VDS --3.5 --2.0 --1.5 °C --0.8 --2.5 C VGS= --1.0V --3.0 --1.0 --0.4 25 °C --0.5 --25 --1.2 VDS= --10V Drain Current, ID -- A --10V --4.0V -3.0V --1.6 ID -- VGS --4.0 --1. 8V --1 .5V --2.5V --2.0 Drain Current, ID -- A 50Ω Ta= 75° P.G 0 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Drain-to-Source Voltage, VDS -- V --0.9 0 --1.0 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 400 --0.2 IT02753 --1.8 --2.0 IT02754 RDS(on) -- Ta 400 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C 350 300 ID= --1.0A 250 --0.5A 200 150 100 50 0 0 --2 --4 --6 --8 Gate-to-Source Voltage, VGS -- V --10 IT02755 350 300 250 200 --2.5V V S= 0.5A, G -= ID = --4.0V A, V GS I D= --1.0 150 100 50 0 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- °C 120 140 160 IT02756 No.7018-2/4 CPH6315 5°C --2 = a T C 75° 2 1.0 7 5 3 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 --0.01 --0.2 5 --0.6 --0.7 --0.8 --0.9 --1.0 5 tr td(on) --1.2 IT02758 Ciss 3 Ciss, Coss, Crss -- pF tf --1.1 f=1MHz 7 td(off) 10 7 5 --0.5 Ciss, Coss, Crss -- VDS 1000 3 2 3 2 --0.4 Diode Forward Voltage, VSD -- V VDD= --10V VGS= --4V 100 7 5 --0.3 IT02757 SW Time -- ID 1000 7 5 Switching Time, SW Time -- ns 2 --0.1 7 5 2 Drain Current, ID -- A 2 100 7 Coss 5 Crss 3 3 2 2 1.0 --0.1 10 2 3 5 7 2 --1.0 3 Drain Current, ID -- A 5 0 3 2 --10 7 5 Drain Current, ID -- A --3 --2 --1 3 2 0 2 3 4 5 Total Gate Charge, Qg -- nC IT02761 PD -- Ta 2.0 1.6 1.5 --6 --8 --10 --12 --14 --16 --18 --20 IT02760 ASO IDP= --12A <10µs 10 0µ s 1m s 10 10 ms 0m s ID= --3A DC --1.0 7 5 op era tio 3 2 n Operation in this area is limited by RDS(on). --0.1 7 5 3 2 1 --4 Drain-to-Source Voltage, VDS -- V VDS= --10V ID= --2A 0 --2 IT02759 VGS -- Qg --4 Gate-to-Source Voltage, VGS -- V 3 3 2 0.1 --0.01 Allowable Power Dissipation, PD -- W --1.0 7 5 C 3 3 2 75 25 °C °C C 25° VGS=0 Ta = 5 Forward Current, IF -- A Forward Transfer Admittance, yfs -- S VDS= --10V 7 IF -- VSD --10 7 5 --25 ° yfs -- ID 10 Ta=25°C Single pulse Mounted on a ceramic board(1200mm2✕0.8mm) --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 3 IT03602 M ou nt ed on ac er am ic 1.0 bo ar d( 12 00 m 0.5 m2 ✕0 .8m m ) 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT03601 No.7018-3/4 CPH6315 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of July, 2001. Specifications and information herein are subject to change without notice. PS No.7018-4/4