CPH6350 Ordering number : ENA1529A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET CPH6350 General-Purpose Switching Device Applications Features • • • 4V drive Low ON-resistance Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) Allowable Power Dissipation Channel Temperature PD Tch Storage Temperature Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) Unit --30 V ±20 V --6 A --24 A 1.6 W 150 °C --55 to +150 °C Package Dimensions Product & Package Information unit : mm (typ) 7018A-003 • Package : CPH6 • JEITA, JEDEC : SC-74, SOT-26, SOT-457 • Minimum Packing Quantity : 3,000 pcs./reel 4 Packing Type: TL Marking 0.9 1 2 0.95 LOT No. XG 0.05 1.6 0.2 0.6 2.8 0.2 0.6 5 CPH6350-TL-E CPH6350-TL-W 0.15 2.9 6 TL 3 0.4 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain Electrical Connection 1, 2, 5, 6 SANYO : CPH6 3 4 http://semicon.sanyo.com/en/network 71112 TKIM TC-00002780/80509PE TKIM TC-00002052 No. A1529-1/7 CPH6350 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions ID=--1mA, VGS=0V VDS=--30V, VGS=0V Ratings min typ Unit max --30 V Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) VGS=±16V, VDS=0V VDS=--10V, ID=--1mA Forward Transfer Admittance | yfs | VDS=--10V, ID=--3A 5.4 RDS(on)1 ID=--3A, VGS=--10V 33 43 mΩ RDS(on)2 ID=--1.5A, VGS=--4.5V 58 82 mΩ RDS(on)3 ID=--1.5A, VGS=--4V 61 86 mΩ Static Drain-to-Source On-State Resistance Input Capacitance Ciss Output Capacitance Coss --1.2 VDS=--10V, f=1MHz --1 μA ±10 μA --2.6 V S 600 pF 145 pF Reverse Transfer Capacitance Crss 110 pF Turn-ON Delay Time td(on) tr 7.4 ns 27 ns Rise Time Turn-OFF Delay Time Fall Time td(off) tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD See specified Test Circuit. VDS=--15V, VGS=--10V, ID=--6A IS=--6A, VGS=0V 62 ns 45 ns 13 nC 1.8 nC 3.2 nC --0.87 --1.2 V Switching Time Test Circuit 0V --10V VDD= --15V VIN ID= --3A RL=5Ω VOUT VIN D PW=10μs D.C.≤1% G P.G 50Ω S CPH6350 Ordering Information Package Shipping memo CPH6350-TL-E Device CPH6 3,000pcs./reel Pb Free CPH6350-TL-W CPH6 3,000pcs./reel Pb Free and Halogen Free No. A1529-2/7 CPH6350 ID -- VDS --3 .0 V VDS= --10V --8 VGS= --2.5V --5 --4 --3 --2 --0.5 --1 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 Drain-to-Source Voltage, VDS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 IT14856 RDS(on) -- Ta 120 100 80 60 40 20 0 --2 --4 --6 --8 --10 --12 --14 10 7 Source Current, IS -- A °C -25 =a T °C 75 1.0 7 25 °C 5 3 2 0.1 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Drain Current, ID -- A = VGS 2 3 5 7 .0A = --3 0V, I D --10. 30 20 --40 --20 0 20 40 60 80 100 120 5 IS -- VSD --1.0 7 5 3 2 --0.1 7 5 3 2 --0.4 --0.6 --0.8 --1.0 Diode Forward Voltage, VSD -- V f=1MHz 1000 Ciss, Coss, Crss -- pF 2 tr 10 td(on) 7 Ciss 5 3 2 Coss Crss 100 5 VDD= --15V VGS= --10V 3 5 7 --1.0 --1.2 IT14860 Ciss, Coss, Crss -- VDS 2 3 2 160 VGS=0V --10 7 5 3 2 --0.01 7 5 3 2 --0.001 --0.2 tf 7 140 IT14858 td(off) 7 3 --0.1 40 IT14859 SW Time -- ID 100 4 = -V GS 50 2 3 A 1.5 = -, ID V 5 . Ambient Temperature, Ta -- °C VDS= --10V 5 = -, ID .0V 4 = -V GS 60 10 --60 --16 A 1.5 70 IT14857 | yfs | -- ID 2 80 --25 °C --3.0A 25°C 140 90 5°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ ID= --1.5A 160 2 Forward Transfer Admittance, | yfs | -- S --1.0 Gate-to-Source Voltage, VGS -- V Ta=25°C Gate-to-Source Voltage, VGS -- V Switching Time, SW Time -- ns --0.5 100 180 0 0 IT14855 RDS(on) -- VGS 200 0 --1.0 Ta= 7 0 25° C --1.0 --6 Ta= 75° C --25 °C --1.5 Drain Current, ID -- A --7 --6.0 V --2.0 ID -- VGS --9 --4 . --18.0V Drain Current, ID -- A --2.5 --4.0V 5V -3 .5 V --10.0V --3.0 2 3 Drain Current, ID -- A 5 7 --10 2 IT14861 7 5 0 --5 --10 --15 --20 --25 Drain-to-Source Voltage, VDS -- V --30 IT14862 No. A1529-3/7 CPH6350 VGS -- Qg --10 3 2 --8 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V --9 --7 --6 --5 --4 --3 3 2 3 2 2 3 4 5 7 6 8 9 10 Total Gate Charge, Qg -- nC 12 11 13 IT14863 PD -- Ta 2.0 ID= --6A DC m 0m op 10 0 1m μs s 10 10 s s er --1.0 7 5 --1 1 IDP= --24A (PW≤10μs) 3 2 --0.1 7 5 0 Allowable Power Dissipation, PD -- W --10 7 5 --2 0 ASO 5 VDS= --10V ID= --6A ati on Operation in this area is limited by RDS(on). (T a= 25 °C ) Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) --0.01 --0.01 2 3 5 7--0.1 2 3 5 7--1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 3 5 7 IT14864 When mounted on ceramic substrate (900mm2×0.8mm) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT14865 No. A1529-4/7 CPH6350 Embossed Taping Specification CPH6350-TL-E, CPH6350-TL-W No. A1529-5/7 CPH6350 Outline Drawing CPH6350-TL-E, CPH6350-TL-W Land Pattern Example Mass (g) Unit 0.015 mm * For reference Unit: mm 2.4 1.4 0.6 0.95 0.95 No. A1529-6/7 CPH6350 Note on usage : Since the CPH6350 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. 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Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of July, 2012. Specifications and information herein are subject to change without notice. PS No. A1529-7/7