Ordering number:ENN5990B N-Channel Silicon MOSFET CPH6403 Load Switching Applications Features Package Dimensions · Low ON-resistance. · Ultrahigh-speed switching. · 2.5V drive. unit:mm 2151A [CPH6403] 5 0.2 0.15 2.9 4 0.6 6 2.8 0.6 1.6 0.05 3 0.95 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain 0.2 2 0.7 0.9 1 0.4 Specifications SANYO : CPH6 Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) Unit 20 V ±10 V 6 A ID Drain Current (pulse) IDP PW≤10µs, duty cycle≤1% 24 A Allowable Power Dissipation Mounted on a ceramic board (900mm2×0.8mm) 1.6 W Channel Temperature PD Tch 150 ˚C Storage Temperature Tstg –55 to +150 ˚C Electrical Characteristics at Ta = 25˚C Parameter Symbol Drain-to-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-to-Source Leakage Current V(BR)DSS IDSS Conditions ID=1mA, VGS=0 typ Forward Transfer Admittance Static Drain-to-Source On-State Resistance RDS(on)1 VDS=10V, ID=3A ID=3A, VGS=4V Unit max 20 V VDS=20V, VGS=0 IGSS VGS(off) | yfs | Cutoff Voltage Ratings min 1 µA ±10 µA 1.3 V 28 38 mΩ 52 mΩ VGS=±8V, VDS=0 VDS=10V, ID=1mA 0.5 6.3 9 S RDS(on)2 ID=1A, VGS=2.5V 38 Input Capacitance Ciss VDS=10V, f=1MHz 700 pF Output Capacitance Coss 200 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz VDS=10V, f=1MHz 150 pF Continued on next page. Marking : KC Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N2100TS (KOTO) TA-2075 No.5990-1/4 CPH6403 Continued from preceding page. Parameter Symbol Turn-ON Delay Time min typ Unit max td(on) See specified Test Circuit 14 ns tr See specified Test Circuit 90 ns td(off) See specified Test Circuit 90 ns tf See specified Test Circuit 100 ns 24 nC Rise Time Turn-OFF Delay Time Ratings Conditions Fall Time Total Gate Charge Qg VDS=10V, VGS=10V, ID=6A Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=6A 1.5 nC Gate-to-Drain "Miller" Charge Qgd VDS=10V, VGS=10V, ID=6A 3.2 nC Diode Forward Voltage VSD IS=6A, VGS=0 0.87 1.2 V Switching Time Test Circuit 4V 0V VDD=10V VIN ID=3A RL=3.3Ω VIN PW=10µs D.C.≤1% D VOUT G CPH6403 P.G 50Ω S ID - VDS 2 2 VGS=1.0V 0 0 0.5 1.0 1.5 2.0 2.5 0 0 3.0 0.2 0.4 Drain-to-Source Voltage, VDS – V 7 | yf s | - I D 5 3 2 °C –25 Ta= 7 25°C C 75° 5 3 2 1.0 0.1 2 3 5 7 1.0 2 3 Drain Current, ID – A 5 7 1.0 1.2 1.4 1.6 1.8 2.0 R DS(on) - VGS 80 VDS=10V 10 0.8 Gate-to-Source Voltage, VGS – V Static Drain-to-Source On-State Resistance, RDS(on) – mΩ Forward Transfer Admittance, | yfs | – S 100 0.6 °C C 4 75° 4 6 –25 1.5V Ta= 6 8 25 °C Drain Current, ID – A 2.5V 4.0V Drain Current, ID – A VDS=10V 10 10 8 ID - VGS 12 2.0V 3.5V 3.0V 12 10 2 Ta=25°C 70 ID=3A 60 ID=1A 50 40 30 20 10 0 0 2 4 6 8 10 12 Gate-to-Source Voltage, VGS – V No.5990-2/4 CPH6403 30 4V S= 20 10 0 -50 -25 0 25 50 75 100 125 150 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0.001 0.2 0.3 0.4 Ciss,Coss,Crss - VDS Gate-to-Source Voltage, VGS – V Ciss, Coss, Crss – pF 1000 7 5 Ciss 3 2 Coss 100 7 5 Crss 3 2 0.8 0.9 1.0 1.1 8 7 6 5 4 3 2 1 10 0 2 4 6 8 10 12 14 16 18 0 20 0 5 Drain-to-Source Voltage, VDS – V 10 SW Time - I D 3 td(off) 100 7 5 tf tr 3 td(on) 2 10 7 5 3 2 1.0 7 0.1 2 3 5 7 2 1.0 3 20 25 A S O 5 3 2 VDD=10V VGS=4V 2 15 Total Gate Charge, Qg – nC Drain Current, ID – A Switching Time, SW Time – ns 0.7 VDS=10V ID=6A 9 2 5 7 10 2 Drain Current, ID – A 10 7 5 3 2 I D =6A 0.1 7 5 3 2 10m s 100 DC o 1.0 7 5 3 2 100µs 1m s <10µs I DP =24A Operation in this area is limited by RDS(on). ms pe rat ion Ta=25°C 1 Pulse Mounted on a ceramic board (900mm2×0.8mm) 0.01 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain-to-Source Voltage, VDS – V P D - Ta 1.8 Allowable Power Dissipation, PD – W 0.6 VGS - Qg 10 f=1MHz 3 1000 7 5 0.5 Diode Forward Voltage, VSD – V Ambient Temperature, Ta – ˚C 10000 7 5 25° C –25 °C A,VG I D=3 I F - VSD VGS=0 5°C V =2.5 ,VGS 1A I D= 40 2 10 7 5 3 2 =7 50 Forward Current, IF – A Static Drain-to-Source On-State Resistance, RDS (on) – mΩ 60 Ta R DS(on) - Ta 1.6 M ou 1.4 nt 1.2 ed on ac er 1.0 am ic bo ar 0.8 d (9 00 m 0.6 0.4 m2 ×0 .8 m m ) 0.2 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta – ˚C No.5990-3/4 CPH6403 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2000. Specifications and information herein are subject to change without notice. PS No.5990-4/4