Ordering number : ENN7607 CPH6412 N-Channel Silicon MOSFET CPH6412 Ultrahigh-Speed Switching Applications Preliminary Features • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 4V drive. unit : mm 2151A [CPH6412] 0.15 2.9 5 4 0.6 6 0.2 • 0.6 1.6 2.8 0.05 3 0.95 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain 0.2 2 0.7 0.9 1 0.4 Specifications SANYO : CPH6 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 Gate-to-Source Voltage VGSS ±20 V 6 A Drain Current (DC) ID Drain Current (Pulse) IDP PD Allowable Power Dissipation V PW≤10µs, duty cycle≤1% 24 A Mounted on a ceramic board (900mm2✕0.8mm) 1.6 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage V(BR)DSS IDSS IGSS Conditions ID=1mA, VGS=0 VDS=30V, VGS=0 Ratings min typ Unit max 30 VGS=±16V, VDS=0 VDS=10V, ID=1mA 1.2 VDS=10V, ID=3A 4.2 V 1 µA ±10 µA 2.6 V 33 mΩ Forward Transfer Admittance VGS(off) yfs ID=3A, VGS=10V ID=1.5A, VGS=4.5V 25 Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 35 49 mΩ RDS(on)3 ID=1.5A, VGS=4V 37 52 mΩ Marking : KN 6 S Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 22004 TS IM TA-100705 No.7607-1/4 CPH6412 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Input Capacitance Ciss pF Coss VDS=10V, f=1MHz VDS=10V, f=1MHz 690 Output Capacitance 160 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 88 pF Turn-ON Delay Time td(on) See specified Test Circuit. 11 ns Rise Time tr td(off) See specified Test Circuit. 45 ns See specified Test Circuit. 60 ns Turn-OFF Delay Time Fall Time tf Qg Total Gate Charge See specified Test Circuit. 35 ns VDS=10V, VGS=10V, ID=5A 16 nC 3.4 nC Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=5A VDS=10V, VGS=10V, ID=5A Diode Forward Voltage VSD IS=6A, VGS=0 2.4 nC 0.84 1.2 V Switching Time Test Circuit VDD=15V VIN 10V 0V ID=3A RL=5Ω VIN D VOUT PW=10µs D.C.≤1% G CPH6412 P.G 50Ω ID -- VDS VDS=10V 4.0V 3.5 7 V 3 2 2.5V 6 5 4 3 2 1 --25° C Drain Current, ID -- A 4 Ta=7 5°C 3.0 4.5V 10V 5 ID -- VGS 8 V 6.0V 6 Drain Current, ID -- A S 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Drain-to-Source Voltage, VDS -- V 0.9 0 0 1.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Gate-to-Source Voltage, VGS -- V IT06300 RDS(on) -- VGS 80 25 °C 1 VGS=2.0V 4.0 IT06301 RDS(on) -- Ta 80 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C 70 60 50 40 ID=1.5A 3.0A 30 20 10 0 0 2 4 6 8 10 12 14 16 Gate-to-Source Voltage, VGS -- V 18 20 IT06302 70 60 =4V , VGS A 5 . I D=1 V =4.5 VGS .5A, 1 = ID =10V A, V GS I D=3.0 50 40 30 20 10 0 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- °C 120 140 160 IT06303 No.7607-2/4 CPH6412 yfs -- ID 7 3 5 --2 °C 25 2 75 = Ta 1.0 °C °C 7 5 3 2 3 5 7 0.1 2 3 5 7 1.0 2 3 3 2 0.1 7 5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 IT06305 f=1MHz Ciss 5 Ciss, Coss, Crss -- pF td(off) tf td(on) 10 7 5 0.5 7 3 2 3 2 0.4 1000 VDD=15V VGS=10V 100 7 5 0.3 Diode Forward Voltage, VSD -- V SW Time -- ID 1000 7 5 Switching Time, SW Time -- ns 1.0 7 5 0.01 0.2 5 7 10 IT06304 Drain Current, ID -- A tr 3 2 3 2 Coss 100 Crss 7 5 3 2 1.0 0.1 10 2 3 5 7 2 1.0 3 5 Drain Current, ID -- A 7 0 10 IT06306 5 VDS=10V ID=5A 9 3 2 Drain Current, ID -- A 8 7 6 5 4 3 10 7 5 3 2 1 3 2 2 4 6 8 10 12 14 16 Total Gate Charge, Qg -- nC 18 IT06308 PD -- Ta 2.0 1.6 1.5 15 20 25 30 IT06307 ASO IDP=24A <10µs 10 0 1m µs s ID=6A 10 10 DC 1.0 7 5 0.1 7 5 0 10 3 2 2 0 5 Drain-to-Source Voltage, VDS -- V VGS -- Qg 10 Gate-to-Source Voltage, VGS -- V 3 2 3 2 2 0.1 0.01 Allowable Power Dissipation, PD -- W VGS=0 Ta=7 5°C 25°C --25 °C 10 5 IF -- VSD 10 7 5 VDS=10V Forward Current, IF -- A Forward Transfer Admittance, yfs -- S 2 ms 0m s op era tio n Operation in this area is limited by RDS(on). Ta=25°C Single pulse Mounted on a ceramic board(900mm2✕0.8mm) 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 Drain-to-Source Voltage, VDS -- V 10 2 3 IT06309 M ou nt ed on ac er 1.0 am ic bo ar d( 90 0m m2 ✕0 0.5 .8m m ) 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT06310 No.7607-3/4 CPH6412 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of February, 2004. Specifications and information herein are subject to change without notice. PS No.7607-4/4