CQ202-4BS-2 CQ202-4DS-2 CQ202-4MS-2 CQ202-4NS-2 w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CQ202-4BS-2 series type is an epoxy molded silicon triac designed for full wave AC control applications featuring gate triggering in all four (4) quadrants. 4.0 AMP TRIAC 200 THRU 800 VOLTS MARKING: FULL PART NUMBER TO-202-2 CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) Peak Repetitive Off-State Voltage SYMBOL VDRM IT(RMS) CQ202 -4BS-2 200 CQ202 -4DS-2 400 CQ202 -4MS-2 600 CQ202 -4NS-2 800 UNITS V RMS On-State Current (TC=80°C) Peak Non-Repetitive Surge Current (t=8.3ms) ITSM Peak Non-Repetitive Surge Current (t=10ms) ITSM 4.0 A 40 A 35 A I2t Value for Fusing (t=10ms) I2t 6.0 A2s Peak Gate Power (tp=10μs) PGM PG(AV) 3.0 W 0.2 W Average Gate Power Dissipation Peak Gate Current (tp=10μs) 1.2 A -40 to +150 °C -40 to +125 °C Thermal Resistance TJ ΘJA 60 °C/W Thermal Resistance ΘJC 7.5 °C/W Storage Temperature Junction Temperature ELECTRICAL SYMBOL IDRM IDRM IGT IGT IH VGT IGM Tstg CHARACTERISTICS: (TC=25°C unless otherwise noted) TEST CONDITIONS MIN Rated VDRM, RGK=1.0KΩ TYP MAX 10 UNITS μA Rated VDRM, RGK=1.0KΩ, TC=125°C VD=12V, QUAD I, II, III 200 μA 2.5 5.0 mA VD=12V, QUAD IV 5.4 9.0 mA mA RGK=1.0KΩ 1.6 5.0 0.95 1.75 V VTM VD=12V, QUAD I, II, III ITM=6.0A, tp=380μs 1.25 1.75 V dv/dt VD=⅔ VDRM, TC=125°C 11 V/μs R2 (23-April 2012) CQ202-4BS-2 CQ202-4DS-2 CQ202-4MS-2 CQ202-4NS-2 4.0 AMP TRIAC 200 THRU 800 VOLTS TO-202-2 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Cathode 2) Anode 3) Gate Tab is common to pin 2 MARKING: FULL PART NUMBER R2 (23-April 2012) w w w. c e n t r a l s e m i . c o m