Toshiba CRY82 Toshiba zener diode silicon epitaxial type Datasheet

CRY62~CRZ47
TOSHIBA Zener Diode Silicon Epitaxial Type
CRY62~CRZ47
Use in Communication, Automation and
Measurement Equipment
Constant Voltage Regulation
Transient Suppressors
Unit: mm
l Average power dissipation: P = 0.7 W
l Zener voltage: VZ = 6.2~47 V
l Suitable for compact assembly due to small surface-mount package
“S−FLATTM” (Toshiba package name)
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Power dissipation
P
700
mW
Junction temperature
Tj
−40 ~ 150
°C
Tstg
−40 ~ 150
°C
Storage temperature range
Standard Soldering Pad
JEDEC
―
JEITA
―
TOSHIBA
Unit: mm
3-2A1A
Weight: 0.013 g (typ.)
1.2
1.2
2.8
1
2002-08-29
CRY62~CRZ47
Marking
Following Indicates
the Date of Manufacture
CRY62~CRY91
Lot No.
6
2
Month of
manufacture
January to December
are denoted by letter A
to L respectively.
Year of
manufacture
Last decimal digit of
the year of
manufacture
0
1
2
3
4
5
6
7
8
9
0
1
2
3
4
5
6
7
8
9
Type Code (e.g., CRY62)
Cathode mark
CRZ10~CRZ47
Lot No.
10
Month of
manufacture
January to December
are denoted by letter A
to L respectively.
Year of
manufacture
Last decimal digit of
the year of
manufacture
Type Code (e.g., CRZ10)
Cathode mark
2
2002-08-29
CRY62~CRZ47
Electrical Characteristics (Ta = 25°C)
Zener
Impedance
Zener Voltage
Product
No.
VZ
(V)
Measurement
Current
IZ
(mA)
rd
(Ω)
Max
Measurement
Current
IZ
(mA)
Temperature
Coefficient
of Zener
Voltage
αT
(mV / °C)
Forward
Voltage
VF
(V)
Measure
-ment
Current
IF
(A)
Reverse
Current
IR
(µA)
Typ.
Max
Max
10
2
3
1.0
0.2
10
3.0
60
10
3
4
1.0
0.2
10
3.0
10
30
10
4
5
1.0
0.2
10
4.5
9.0
10
30
10
4
6
1.0
0.2
10
4.9
9.1
10.0
10
30
10
5
8
1.0
0.2
10
5.5
9.0
10.0
11.0
10
30
10
6
9
1.0
0.2
10
6.0
CRZ11
9.9
11.0
12.1
10
30
10
7
11
1.0
0.2
10
7.0
CRZ12
10.8
12.0
13.2
10
30
10
8
13
1.0
0.2
10
8.0
CRZ13
11.7
13.0
14.3
10
30
10
9
14
1.0
0.2
10
9.0
CRZ15
13.5
15.0
16.5
10
30
10
11
17
1.0
0.2
10
10.0
CRZ16
14.4
16.0
17.6
10
30
10
12
19
1.0
0.2
10
11.0
CRZ18
16.2
18.0
19.8
10
30
10
14
23
1.0
0.2
10
13.0
CRZ20
18.0
20.0
22.0
10
30
10
16
26
1.0
0.2
10
14.0
CRZ22
19.8
22.0
24.2
10
30
10
18
28
1.0
0.2
10
16.0
CRZ24
21.6
24.0
26.4
10
30
10
20
32
1.0
0.2
10
17.0
CRZ27
24.3
27.0
29.7
10
30
10
23
36
1.0
0.2
10
19.0
CRZ30
27.0
30.0
33.0
10
30
10
25
40
1.0
0.2
10
21.0
CRZ33
29.7
33.0
36.3
10
30
10
26
41
1.0
0.2
10
26.4
CRZ36
32.4
36.0
39.6
9
30
9
28
45
1.0
0.2
10
28.8
CRZ39
35.1
39.0
42.9
8
35
8
30
48
1.0
0.2
10
31.2
CRZ43
38.7
43.0
47.3
7
40
7
33
53
1.0
0.2
10
34.4
CRZ47
42.3
47.0
51.7
6
65
6
38
60
1.0
0.2
10
37.6
Min
Typ.
Max
CRY62
5.6
6.2
6.8
10
60
CRY68
6.2
6.8
7.4
10
CRY75
6.8
7.5
8.3
CRY82
7.4
8.2
CRY91
8.2
CRZ10
3
Max
Measurement
Voltage
VR
(V)
2002-08-29
CRY62~CRZ47
PRSM – tW
Ta max – P
Device mounted on a glass-epoxy
board
Soldering land: 6 mm ´ 6 mm
Maximum allowable ambient
temperature Ta max (°C)
140
120
100
80
60
40
20
1000
Non-repetitive peak reverse
power dissipation PRSM (W)
160
300
tW
Rectangular pulse
Ta = 25°C
100
Recommended
50
30
10
5
3
0.01
0
0
0.2
0.4
0.6
0.8
Power dissipation P
0.03
1.0
=T – VZ
0.1
0.3
Pulse width tW
(W)
1
3
10
(ms)
=T – VZ
(typ.)
25
(typ.)
40
CRY62~CRZ27
CRZ30~CRZ47
Temperature coefficient of
zenner voltage =T (mV/°C)
Temperature coefficient of
zenner voltage =T (mV/°C)
PRSM
500
20
15
10
5
0
0
4
8
12
16
20
24
35
30
25
26
28
Zenner voltage VZ (V)
30
34
38
42
46
50
Zenner voltage VZ (V)
rth (j-a) – t
Transient thermal impendance
rth (j-a) (°C/W)
10000
(1) Device mounted on a ceramic board
Soldering land: 2 mm ´ 2 mm
1000
(2) Device mounted on a glass-epoxy board
Soldering land: 6 mm ´ 6 mm
100
(2)
(1)
10
1
0.001
0.01
0.1
Time t
1
10
100
(s)
4
2002-08-29
CRY62~CRZ47
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
5
2002-08-29
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