Central CS202-4N 4.0 amp scr 200 thru 800 volt Datasheet

CS202-4B
CS202-4D
CS202-4M
CS202-4N
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CS202-4B series
type is an epoxy molded silicon controlled rectifier
designed for sensing circuit applications and control
systems.
4.0 AMP SCR
200 THRU 800 VOLTS
MARKING: FULL PART NUMBER
TO-202 CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
Peak Repetitive Off-State Voltage
RMS On-State Current (TC=85°C)
Peak One Cycle Surge (t=10ms)
I2t Value for Fusing (t=10ms)
Peak Gate Power (tp=20μs)
SYMBOL
VDRM, VRRM
IT(RMS)
CS202
-4B
200
CS202
-4D
400
CS202
-4M
600
CS202
-4N
800
4.0
ITSM
I2t
UNITS
V
A
30
A
4.5
A2s
PGM
PG(AV)
IGM
3.0
W
0.2
W
1.2
A
Critical Rate of Rise of On-State Current
di/dt
50
A/μs
Storage Temperature
Tstg
TJ
-40 to +150
°C
-40 to +125
°C
ΘJA
ΘJC
80
°C/W
7.5
°C/W
Average Gate Power Dissipation
Peak Gate Current (tp=20μs)
Junction Temperature
Thermal Resistance
Thermal Resistance
ELECTRICAL
SYMBOL
IDRM, IRRM
IDRM, IRRM
IGT
IH
CHARACTERISTICS: (TC=25°C unless otherwise noted)
TEST CONDITIONS
MIN
Rated VDRM, VRRM, RGK=1.0KΩ
Rated VDRM, VRRM, RGK=1.0KΩ, TC=125°C
VD=12V, RL=10Ω
20
TYP
MAX
10
UNITS
μA
200
μA
38
200
μA
0.25
2.0
mA
VGT
IT=50mA, RGK=1.0KΩ
VD=12V, RL=10Ω
0.55
0.8
V
VTM
ITM=8.0A, tp=380μs
1.6
1.8
V
dv/dt
VD=⅔ VDRM, RGK=1.0KΩ, TC=125°C
10
V/μs
R4 (23-January 2012)
CS202-4B
CS202-4D
CS202-4M
CS202-4N
4.0 AMP gSCR
200 THRU 800 VOLTS
TO-202 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Cathode
2) Anode
3) Gate
Tab is common to pin 2
MARKING:
FULL PART NUMBER
R4 (23-January 2012)
w w w. c e n t r a l s e m i . c o m
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