CS220-12B CS220-12D CS220-12M CS220-12N CS220-12P SILICON CONTROLLED RECTIFIERS 12 AMP, 200 THRU 1000 VOLT w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CS220-12B series types are epoxy molded SCRs designed for sensing circuit and control system applications. MARKING: FULL PART NUMBER TO-220 CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL Peak Repetitive Off-State Voltage VDRM, VRRM RMS On-State Current (TC=90°C) IT(RMS) Peak One Cycle Surge Current, t=10ms I2t Value for Fusing, t=10ms Peak Gate Power Dissipation, tp=10μs Average Gate Power Dissipation Peak Forward Gate Current, tp=10μs Peak Forward Gate Voltage, tp=10μs Peak Reverse Gate Voltage, tp=10μs Critical Rate of Rise of On-State Current -12B 200 -12D 400 CS220 -12M 600 -12N 800 12 -12P UNITS 1000 V A ITSM I2t 80 A 32 A2s PGM PG(AV) 40 W 1.0 W IFGM VFGM 4.0 A 16 V VRGM di/dt 5.0 V 100 A/μs -40 to +125 °C Storage Temperature TJ Tstg -40 to +150 °C Thermal Resistance ΘJA 60 °C/W Thermal Resistance ΘJC 2.5 °C/W Operating Junction Temperature ELECTRICAL SYMBOL IDRM, IRRM IDRM, IRRM CHARACTERISTICS: (TC=25°C unless otherwise noted) TEST CONDITIONS MIN TYP Rated VDRM, VRRM Rated VDRM, VRRM, TC=125°C IGT IH VGT VD=12V, RL=10Ω IT=100mA VTM VD=12V, RL=10Ω ITM=24A, tp=380μs dv/dt VD=⅔Rated VDRM, TC=125°C 200 MAX 10 UNITS μA 3.0 mA 3.5 15 mA 8.7 20 mA 0.64 1.5 V 1.21 1.6 V V/μs R6 (5-September 2014) CS220-12B CS220-12D CS220-12M CS220-12N CS220-12P SILICON CONTROLLED RECTIFIERS 12 AMP, 200 THRU 1000 VOLT TYPICAL ELECTRICAL CHARACTERISTICS TO-220 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Cathode 2) Anode 3) Gate Tab is common to pin 2 MARKING: FULL PART NUMBER R6 (5-September 2014) w w w. c e n t r a l s e m i . c o m