TI CSD17304Q3_10

CSD17304Q3
www.ti.com
SLPS258A – FEBRUARY 2010 – REVISED OCTOBER 2010
30V N-Channel NexFET™ Power MOSFETs
Check for Samples: CSD17304Q3
PRODUCT SUMMARY
FEATURES
1
•
•
•
•
•
•
•
•
2
Optimized for 5V Gate Drive
Ultralow Qg and Qgd
Low Thermal Resistance
Avalanche Rated
Pb Free Terminal Plating
RoHS Compliant
Halogen Free
SON 3.3-mm × 3.3-mm Plastic Package
The NexFET™ power MOSFET has been designed
to minimize losses in power conversion applications
and optimized for 5V gate drive applications.
Top View
8
D
S
2
7
D
S
D
G
5
4
5.1
nC
Qgd
Gate Charge Gate to Drain
Drain to Source On Resistance
1.1
nC
VGS = 3V
9.8
mΩ
VGS = 4.5V
6.9
mΩ
VGS = 8V
5.9
mΩ
Threshold Voltage
1.3
V
Device
Package
Media
CSD17304Q3
SON 3.3-mm × 3.3-mm
Plastic Package
13-Inch
Reel
Qty
Ship
2500
Tape and
Reel
ABSOLUTE MAXIMUM RATINGS
TA = 25°C unless otherwise stated
VALUE
UNIT
VDS
Drain to Source Voltage
30
V
VGS
Gate to Source Voltage
+10 / –8
V
Continuous Drain Current, TC = 25°C
56
A
Continuous Drain Current(1)
15
A
IDM
Pulsed Drain Current, TA = 25°C(2)
88
A
PD
Power Dissipation(1)
2.7
W
TJ,
TSTG
Operating Junction and Storage
Temperature Range
–55 to 150
°C
EAS
Avalanche Energy, Single Pulse
ID = 42A, L = 0.1mH, RG = 25Ω
88
mJ
ID
(1) Typical RqJA = 46°C/W on a 1-inch2 (6.45-cm2),
2-oz. (0.071-mm thick) Cu pad on a 0.06-inch (1.52-mm) thick
FR4 PCB.
(2) Pulse duration ≤300ms, duty cycle ≤2%
D
6
3
V
Gate Charge Total (4.5V)
ORDERING INFORMATION
DESCRIPTION
1
30
Qg
VGS(th)
Notebook Point of Load
Point-of-Load Synchronous Buck in
Networking, Telecom, and Computing Systems
S
Drain to Source Voltage
RDS(on)
APPLICATIONS
•
•
VDS
D
P0095-01
Text 4 Spacing
RDS(on) vs VGS
Text 4 Spacing
GATE CHARGE
8
ID = 17A
18
VGS - Gate-to-Source Voltage - V
RDS(on) - On-State Resistance - mΩ
20
16
14
T C = 125°C
12
10
8
6
4
T C = 25°C
2
ID = 17A
VDS = 15V
7
6
5
4
3
2
1
0
0
0
1
2
3
4
5
6
7
8
VGS - Gate-to-Source Voltage - V
9
10
G006
0
2
4
6
Qg - Gate Charge - nC
8
10
G003
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
NexFET is a trademark of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2010, Texas Instruments Incorporated
CSD17304Q3
SLPS258A – FEBRUARY 2010 – REVISED OCTOBER 2010
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Static Characteristics
BVDSS
Drain to Source Voltage
VGS = 0V, ID = 250mA
IDSS
Drain to Source Leakage Current
VGS = 0V, VDS = 24V
IGSS
Gate to Source Leakage Current
VDS = 0V, VGS = +10 / –8V
VGS(th)
Gate to Source Threshold Voltage
VDS = VGS, ID = 250mA
RDS(on)
Drain to Source On Resistance
gfs
Transconductance
30
0.9
V
1
mA
100
nA
1.3
1.8
V
VGS = 3V, ID = 17A
9.8
12.6
mΩ
VGS = 4.5V, ID = 17A
6.9
8.8
mΩ
VGS = 8V, ID = 17A
5.9
7.5
mΩ
VDS = 15V, ID = 17A
48
S
Dynamic Characteristics
CISS
Input Capacitance
VGS = 0V, VDS = 15V,
f = 1MHz
735
955
pF
COSS
Output Capacitance
390
505
pF
CRSS
Reverse Transfer Capacitance
29
38
pF
Rg
Series Gate Resistance
1.1
2.2
Ω
Qg
Gate Charge Total (4.5V)
5.1
6.6
nC
Qgd
Gate Charge Gate to Drain
1.1
nC
Qgs
Gate Charge Gate to Source
1.8
nC
Qg(th)
Gate Charge at Vth
0.9
nC
QOSS
Output Charge
9.9
nC
td(on)
Turn On Delay Time
5.1
ns
tr
Rise Time
9.1
ns
td(off)
Turn Off Delay Time
10.4
ns
tf
Fall Time
3.1
ns
VDS = 15V, ID = 17A
VDS = 13V, VGS = 0V
VDS = 15V, VGS = 4.5V,
ID = 17A , RG = 2Ω
Diode Characteristics
VSD
Diode Forward Voltage
IDS = 17A, VGS = 0V
0.85
Qrr
Reverse Recovery Charge
14.5
nC
trr
Reverse Recovery Time
VDD = 13V, IF = 17A,
di/dt = 300A/ms
1
V
17.3
ns
THERMAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
MAX
UNIT
RqJC
Thermal Resistance Junction to Case (1)
PARAMETER
3.9
°C/W
RqJA
Thermal Resistance Junction to Ambient (1) (2)
57
°C/W
(1)
(2)
2
MIN
TYP
RqJC is determined with the device mounted on a 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu pad on a 1.5-inch × 1.5-inch (3.81-cm ×
3.81-cm), 0.06-inch (1.52-mm) thick FR4 PCB. RqJC is specified by design, whereas RqJA is determined by the user’s board design.
Device mounted on FR4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu.
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Product Folder Link(s): CSD17304Q3
CSD17304Q3
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SLPS258A – FEBRUARY 2010 – REVISED OCTOBER 2010
GATE
GATE
Source
Source
Max RqJA = 57°C/W
when mounted on
1 inch2 (6.45 cm2) of
2-oz. (0.071-mm thick)
Cu.
Max RqJA = 158°C/W
when mounted on a
minimum pad area of
2-oz. (0.071-mm thick)
Cu.
DRAIN
DRAIN
M0161-02
M0161-01
TYPICAL MOSFET CHARACTERISTICS
(TA = 25°C unless otherwise stated)
ZqJA - Normalized Thermal Impedance
10
1
0.5
0.3
0.1
Duty Cycle = t1/t2
0.1
0.05
P
0.01
0.02
0.01
t1
t2
Single Pulse
0.001
0.001
0.01
Typical RqJA = 126°C/W (min Cu)
TJ = P ´ ZqJA ´ RqJA
0.1
1
tp - Pulse Duration - s
10
100
1k
G012
Figure 1. Transient Thermal Impedance
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CSD17304Q3
SLPS258A – FEBRUARY 2010 – REVISED OCTOBER 2010
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TYPICAL MOSFET CHARACTERISTICS (continued)
(TA = 25°C unless otherwise stated)
50
45
IDS - Drain-to-Source Current - A
IDS - Drain-to-Source Current - A
50
VGS = 2.5V
40
VGS = 8V
35
30
25
VGS = 4.5V
20
VGS = 3.5V
15
10
VGS = 3V
VDS = 5V
45
40
35
30
T C = 125°C
25
20
T C = 25°C
15
T C = -55°C
10
5
5
0
0
0
0.5
1
1.5
VDS - Drain-to-Source Voltage - V
0
2
0.5
Figure 2. Saturation Characteristics
7
G002
f = 1MHz
VGS = 0V
1.8
1.6
C - Capacitance - nF
6
5
4
3
2
1.4
Coss = Cds + Cgd
1.2
Ciss = Cgd + Cgs
1
0.8
0.6
0.4
1
Crss = Cgd
0.2
0
0
2
4
6
Qg - Gate Charge - nC
8
10
0
5
10
15
20
VDS - Drain-to-Source Voltage - V
G003
Figure 4. Gate Charge
30
G004
20
RDS(on) - On-State Resistance - mΩ
ID = 250µA
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-75
25
Figure 5. Capacitance
1.6
VGS(th) - Threshold Voltage - V
3.5
2
ID = 17A
VDS = 15V
0
ID = 17A
18
16
14
T C = 125°C
12
10
8
6
4
T C = 25°C
2
0
-25
25
75
T C - Case Temperature - °C
125
175
0
1
G005
Figure 6. Threshold Voltage vs. Temperature
4
3
Figure 3. Transfer Characteristics
8
VGS - Gate-to-Source Voltage - V
1
1.5
2
2.5
VGS - Gate-to-Source Voltage - V
G001
2
3
4
5
6
7
8
VGS - Gate-to-Source Voltage - V
9
10
G006
Figure 7. On-State Resistance vs. Gate-to-Source Voltage
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Product Folder Link(s): CSD17304Q3
CSD17304Q3
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SLPS258A – FEBRUARY 2010 – REVISED OCTOBER 2010
TYPICAL MOSFET CHARACTERISTICS (continued)
(TA = 25°C unless otherwise stated)
100
ID = 17A
VGS = 8V
1.4
ISD - Source-to-Drain Current - A
Normalized On-State Resistance
1.6
1.2
1
0.8
0.6
0.4
0.2
-75
10
1
T C = 125°C
0.1
T C = 25°C
0.01
0.001
0.0001
-25
25
75
T C - Case Temperature - °C
125
0
175
Figure 8. Normalized On-State Resistance vs. Temperature
I(AV) - Peak Avalanche Current - A
IDS - Drain-to-Source Current - A
1
1.2
G008
1k
100
1ms
10
10ms
1
11110
100ms
Area Limited
by RDS(on)
0.01
0.01
0.4
0.6
0.8
VSD - Source-to-Drain Voltage - V
Figure 9. Typical Diode Forward Voltage
1k
0.1
0.2
G007
1s
Single Pulse
Typical R θJA = 126°C/W (min Cu)
DC
0.1
1
10
VDS - Drain-to-Source Voltage - V
100
100
T C = 25°C
10
T C = 125°C
1
0.01
0.1
1
10
t(AV) - Time in Avalanche - ms
G009
Figure 10. Maximum Safe Operating Area
100
G010
Figure 11. Single Pulse Unclamped Inductive Switching
IDS - Drain-to-Source Current - A
80
70
60
50
40
30
20
10
0
-50
-25
0
25
50
75
100 125
T C - Case Temperature - °C
150
175
G011
Figure 12. Maximum Drain Current vs. Temperature
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CSD17304Q3
SLPS258A – FEBRUARY 2010 – REVISED OCTOBER 2010
www.ti.com
MECHANICAL DATA
Q3 Package Dimensions
D2
D
H
L
1
2
7
3
6
4
5
5
4
3
b
E2
E
6
e
E
7
2
8
8
1
q
L1
Top View
A1
Bottom View
A
Side View
c
D
Front View
M0142-01
DIM
MILLIMETERS
MIN
NOM
MAX
MIN
NOM
MAX
A
0.950
1.000
1.100
0.037
0.039
0.043
A1
0.000
0.000
0.050
0.000
0.000
0.002
b
0.280
0.340
0.400
0.011
0.013
0.016
c
0.150
0.200
0.250
0.006
0.008
0.010
D
3.200
3.300
3.400
0.126
0.130
0.134
D1
–
–
–
–
–
–
D2
1.650
1.750
1.800
0.065
0.069
0.071
E
3.200
3.300
3.400
0.126
0.130
0.134
E1
–
–
–
–
–
–
E2
2.350
2.450
2.550
0.093
0.096
0.100
e
6
INCHES
0.650 TYP
0.026
H
0.35
0.450
0.550
0.014
0.018
0.022
L
0.35
0.450
0.550
0.014
0.018
0.022
L1
–
–
–
–
–
–
q
–
–
–
–
–
–
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Product Folder Link(s): CSD17304Q3
CSD17304Q3
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SLPS258A – FEBRUARY 2010 – REVISED OCTOBER 2010
2.31
1
8
8
1
0.65 Typ.
2.45
5
4
5
3.50
0.56
0.41
4
0.50 Typ.
Recommended PCB Pattern
0.63
M0143-01
For recommended circuit layout for PCB designs, see application note SLPA005 – Reducing Ringing Through
PCB Layout Techniques.
1.75 ±0.10
Q3 Tape and Reel Information
4.00 ±0.10 (See Note 1)
2.00 ±0.05
Ø 1.50
+0.10
–0.00
3.60
1.30
3.60
5.50 ±0.05
12.00
+0.30
–0.10
8.00 ±0.10
M0144-01
Notes:
1. 10-sprocket hole-pitch cumulative tolerance ±0.2
2. Camber not to exceed 1mm in 100mm, noncumulative over 250mm
3. Material: black static-dissipative polystyrene
4. All dimensions are in mm (unless otherwise specified)
5. Thickness: 0.30 ±0.05mm
6. MSL1 260°C (IR and convection) PbF reflow compatible
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CSD17304Q3
SLPS258A – FEBRUARY 2010 – REVISED OCTOBER 2010
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REVISION HISTORY
Changes from Original (February 2010) to Revision A
•
8
Page
Deleted the Package Marking Information section ............................................................................................................... 7
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PACKAGE MATERIALS INFORMATION
www.ti.com
21-Jan-2011
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
CSD17304Q3
Package Package Pins
Type Drawing
SON
DQG
8
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
2500
330.0
12.8
Pack Materials-Page 1
3.6
B0
(mm)
K0
(mm)
P1
(mm)
3.6
1.2
8.0
W
Pin1
(mm) Quadrant
12.0
Q1
PACKAGE MATERIALS INFORMATION
www.ti.com
21-Jan-2011
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
CSD17304Q3
SON
DQG
8
2500
335.0
335.0
32.0
Pack Materials-Page 2
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