Comchip CSFB203 Smd super fast recovery rectifier Datasheet

SMD Super Fast Recovery Rectifier
COMCHIP
www.comchip.com.tw
CSFB201 Thru CSFB205
Reverse Voltage: 50 - 600 Volts
Forward Current: 2.0 Amp
Features
Ideal for surface mount applications
Easy pick and place
Plastic package has Underwriters Lab.
flammability classification 94V-0
Super fast recovery time 35-50 nS
Built-in strain relief
Low forward voltage drop
SMB/DO-214AA
0.083(2.11)
0.075(1.91)
0.155(3.94)
0.130(3.30)
0.185(4.70)
0.160(4.06)
0.012(0.31)
0.006(0.15)
Mechanical Data
0.096(2.44)
0.083(2.13)
Case: JEDEC DO-214AA molded plastic
Terminals: solderable per MIL-STD-750,
method 2026
Polarity: Color band denotes cathode
end
Mounting position: Any
Approx. Weight:0.093 gram
0.050(1.27)
0.030(0.76)
0.220(5.59)
0.200(5.08)
0.008(0.20)
0.203(0.10)
Dimensions in inches and (millimeter)
Maximum Ratings and Electrical Characterics
Parameter
Symbol
CSFB
201
CSFB
202
CSFB
203
CSFB
204
CSFB
205
Unit
Max. Repetitive Peak Reverse Voltage
V RRM
50
100
200
400
600
V
Max. DC Blocking Voltage
V DC
50
100
200
400
600
V
V RMS
35
70
140
280
420
V
Max. RMS Voltage
Peak Surge Forward Current
8.3ms single half sine-wave
superimposed on rate load
( JEDEC method )
I FSM
Max. Average Forward Current
Io
Max. Instantaneous Forward Current
at 2.0 A
VF
Reverse recovery time
Trr
Max. DC Reverse Current at Rated DC
Blocking Voltage
Ta=25 C
Ta=100 C
IR
50
A
2.0
A
0.95
1.3
35
50
V
nS
5.0
100
uA
20
C/W
C
Max. Thermal Resistance (Note 1)
R
Operating Junction Temperature
Tj
-55 to +150
Storage Temperature
T STG
-55 to +150
JL
1.5
C
Note 1: Thermal resistance from junction to lead, 8.0x8.0 mm square (0.13 mm thick) land areas.
MDS0210019B
Page 1
SMD Super Fast Recovery Rectifier
COMCHIP
www.comchip.com.tw
Rating and Characteristic Curves (CSFB201 Thru CSFB205)
Fig. 1 - Reverse Characteristics
Fig.2 - Forward Characteristics
1000
100
CSFB201-203
Forward current ( A )
Tj=125 C
100
Tj=75 C
10
Tj=25 C
1.0
CSFB204
10
1.0
CSFB205
0.1
Tj=25 C
Pulse width 300uS
4% duty cycle
0.01
0.1
0
20
40
60
80
100
120
0.4
140
0.6
1.0
1.2
1.4
1.6
1.8
Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 3 - Junction Capacitance
Fig. 4 - Non Repetitive Forward
Surge Current
50
60
Peak surge Forward Current ( A )
f=1.0MHz
Vsig=50mVp-p
Junction Capacitance (pF)
0.8
40
30
20
Tj=25 C
10
8.3mS Single Half Sine
Wave JEDEC methode
50
40
30
Tj=25 C
20
15
0
0.1
1.0
10
100
0
1000
1
5
10
50
1 00
Reverse Voltage (V)
Fig. 5 - Test Circuit Diagram and Reverse Recovery Time Characteristics
Fig. 6 - Current Derating Curve
2.8
trr
10W
NONINDUCTIVE
|
|
|
|
|
|
|
|
+0.5A
( )
(+)
25Vdc
(approx.)
D.U.T.
PULSE
GENERATOR
(NOTE 2)
( )
1W
NONINDUCTIVE
Average Forward Current ( A )
50W
NONINDUCTIVE
0
-0.25A
(+)
OSCILLISCOPE
(NOTE 1)
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
-1.0A
2.4
2.0
1.6
1.2
0.8
Single Phase
Half Wave 60Hz
0.4
00
25
50
75
100
125
150
175
1cm
SET TIME BASE FOR
Ambient Temperature ( C)
50 / 10ns / cm
MDS0210019B
Page 2
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