Comchip CURM102 Smd ultra fast recovery rectifier Datasheet

SMD Ultra Fast Recovery Rectifier
COMCHIP
www.comchip.com.tw
CURM101 Thru CURM107
Reverse Voltage: 50 - 1000 Volts
Forward Current: 1.0 Amp
Features
Ideal for surface mount applications
Easy pick and place
Plastic package has Underwriters Lab.
flammability classification 94V-0
Exceeds environmental standard MIL-S19500/228
Low leakage current
MINI SMA
0.161(4.10)
0.146(3.70)
0.012(0.30) Typ.
0.071(1.80)
0.055(1.40)
Mechanical data
0.110(2.80)
0.094(2.40)
Case: Mini SMA/SOD-123 molded plastic
Terminals: solderable per MIL-STD-750,
method 2026
Polarity: Color band denotes cathode
end
Mounting position: Any
Approx. Weight: 0.04 gram
0.063(1.60)
0.055(1.40)
0.035(0.90) Typ.
0.035(0.90) Typ.
Dimensions in inches and (millimeter)
Maximum Ratings and Electrical Characterics
CURM
103
CURM
104
CURM
105
CURM
106
100
200
400
600
800
1000
V
50
100
200
400
600
800
1000
V
35
70
140
280
420
560
700
V
Symbol
CURM
101
Max. Repetitive Peak Reverse Voltage
V RRM
50
Max. DC Blocking Voltage
V DC
V RMS
Parameter
Max. RMS Voltage
Peak Surge Forward Current
8.3ms single half sine-wave
superimposed on rate load
( JEDEC method )
CURM
102
CURM
107
Unit
I FSM
30
A
Max. Average Forward Current
Io
1.0
A
Max. Instantaneous Forward Current
at 1.0 A
VF
Reverse recovery time
Trr
Max. DC Reverse Current at Rated DC
Blocking Voltage
Ta=25 C
Ta=100 C
IR
1.3
1.0
50
1.7
75
V
nS
5.0
50
uA
42
C/W
Typical. Thermal Resistance (Note 1)
R
Operating Junction Temperature
Tj
-55 to +150
C
Storage Temperature
T STG
-55 to +150
C
JA
Note 1: Thermal resistance from junction to ambient.
MDS0208019B
Page 1
SMD Ultra Fast Recovery Rectifier
COMCHIP
www.comchip.com.tw
Rating and Characteristic Curves (CURM101 Thru CURM107)
Fig.2 - Forward Characteristics
Fig. 1 - Reverse Characteristics
1000
Tj=25 C
1.0
RM
10
5-
10
7
CU
RM
RM
10
1.0
0.1
CU
100
CU
Tj=125 C
Forward Current ( A )
Reverse Current ( uA )
10
10
4
1-
10
3
10
0.01
Tj=25 C
Pulse width 300uS
4% duty cycle
0.1
0
0.001
20
40
60
80
100
120
140
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 3 - Junction Capacitance
Fig. 4 - Non Repetitive Forward
Surge Current
=1MHz and applied
4VDC reverse voltage
120
30
Peak surge Forward Current ( A )
Junction Capacitance (pF)
175
100
80
60
40
8.3mS Single Half Sine
Wave JEDEC methode
24
18
Tj=25 C
12
6
20
0
0
0.01
0.1
1.0
10
100
1
Reverse Voltage (V)
5
10
50
1 00
Number of Cycles at 60Hz
Fig. 5 - Test Circuit Diagram and Reverse Recovery Time Characteristics
Fig. 6 - Current Derating Curve
1.4
trr
10W
NONINDUCTIVE
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+0.5A
( )
(+)
25Vdc
(approx.)
D.U.T.
PULSE
GENERATOR
(NOTE 2)
( )
1W
NONINDUCTIVE
Average Forward Current ( A )
50W
NONINDUCTIVE
0
-0.25A
(+)
OSCILLISCOPE
(NOTE 1)
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
-1.0A
1.2
1.0
0.8
0.6
0.4
Single Phase
Half Wave 60Hz
0.2
00
25
50
75
100
125
150
175
1cm
SET TIME BASE FOR
Ambient Temperature ( C)
50 / 10ns / cm
MDS0208019B
Page 2
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