Sony CXA3010Q Read/write amplifier (with built-in filters) for fdd Datasheet

CXA3010Q
Read/Write Amplifier (with Built-in Filters) for FDDs
For the availability of this product, please contact the sales office.
Description
The CXA3010Q is a monolithic IC designed for use
with three-mode Floppy Disk Drives, and contains a
read circuit (with a four-mode filter system), a write
circuit, an erase circuit, and a supply voltage
detection circuit, all on a single chip.
Features
• Single 5V power supply
• Filter system can be switched among four modes:
1M, 1.6M/2M, which are each inner track/outer
track
• Filter characteristics can be set to Chebyshev
(1dB ripple) for 1.6M, 2M/inner track only, and to
Butterworth for the other modes
• A custom selection can be made between
Chebyshev (1dB ripple) and Butterworth for the
filter characteristics for 1.6M, 2M/inner track only
• Permits customization of the fc ratio
• Low preamplifier input conversion noise voltage of
2.0nV/√ Hz (typ.) keeps read data output jitter to a
minimum
• Preamplifier voltage gain can be switched between
39dB and 45dB
• In inner track mode (OTF = Low), the voltage gain
is boosted by 3dB, making it possible to minimize
peak shift in inner tracks.
• Time domain filter can be switched between two
modes: 1M, 1.6M/2M
• Write current can be switched among three
modes: 1M/1.6M/2M. The inner/outer track current
ratio is fixed for each mode, but can be
customized.
• Erase current can be set by an external resistor,
and remains constant. In addition, the current rise
time Tr and fall time Tf are determined according
to the head inductance and current. (Refer to
page 20.)
• Damping resistor can be built in. Resistance can
be customized between 2kΩ and 15kΩ in 1kΩ
steps. A damping resistor can not be connected to
this IC, however.
• Supply voltage detection circuit
32 pin QFP (Plastic)
Applications
Three-mode FDDs
Structure
Bipolar silicon monolithic IC
Absolute Maximum Ratings (Ta = 25°C)
7.0
V
• Supply voltage
VCC
• Operating temperature Topr –20 to +75
°C
• Storage temperature
Tstg –65 to +150
°C
• Allowable power dissipation
PD
500
mW
• Digital signal input pin Input voltage
–0.5 to VCC + 0.3 V
• Power ON output voltage applied VCC + 0.3
V
• Erase output voltage applied
VCC + 0.3
V
• Write head voltage applied
15
V
• Write current
IW
20
mAo-p
• Erase current
IE
30
mA
• Power on output current
7
mA
Operating Conditions
Supply voltage
4.4 to 6.0
V
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
–1–
E94Y32A52-ST
CXA3010Q
HEAD0A
HEAD0B
HEAD1A
HEAD1B
XHG
PREOUTA
X360
PREOUTB
Block Diagram and Pin Configuration
24
23
22
21
20
19
18
17
WCLD 25
FILTER
DIFF + LPF
(BPF)
WCMD 26
PREAMP
16
NC
15
FILTER
OUTA
FILTER
14 OUTB
WCHD 27
IESET 28
WRITE
DRIVER
ERASE
DRIVER
ERA1 31
POWER
MONITOR
A.GND
12
MMVA
COMP
D.GND 29
ERA0 30
13
11 FCSET
TIME
DOMAIN
FILTER
CONTROL
LOGIC
XWD
RD
XCI
5
6
7
8
OTF
4
XS1
3
XEG
2
XWG
1
POWER ON
XPS 32
–2–
10
VCC
9
XHD
CXA3010Q
Pin Description
Pin
No.
Symbol
Pin
voltage
Equivalent circuit
Description
VCC
100k
1
POWER
ON
Reduced voltage detection output.
This is an open collector pin that outputs a
low signal when VCC is below the specified
value.
1
—
A.GND
VCC
2
XWD
Write data input.
This pin is a Schmitt-type input that is
triggered when the logical voltage goes from
High to Low.
1k
—
2
2.3V
A.GND
VCC
140
3
RD
Read data output.
This pin is active when the logical voltage of
the write gate signal and the erase gate
signal is High.
3
—
D.GND
4
XCI
—
Write current control. The write current
increases when the logical voltage is Low.
5
XWG
—
Write gate signal input. The write system
becomes active when the logical voltage is
Low.
6
XEG
—
VCC
100k
4
5
1k
6
7
XS1
—
7
2.1V
8
9
A.GND
Erase gate signal input. The erase system
becomes active when the logical voltage is
Low.
Head side switching signal input. The
HEAD1 system is active when the logical
voltage is Low, and the HEAD0 system is
active when the logical voltage is High, but
only when the logical voltage for the write
gate and the erase gate is High.
8
OTF
—
Filter inner track/outer track mode control.
Inner track mode is selected when the
logical voltage is Low.
9
XHD
—
Filter, time domain filter and write current
1M/2M mode control. 2M mode is selected
when the logical voltage is Low.
–3–
CXA3010Q
Pin
No.
Symbol
Pin
voltage
Equivalent circuit
Description
VCC
18
X360
—
100k
18
1k
Filter, time domain filter and write current
1M/1.6M mode control. 1.6M mode is
selected when the logical voltage is Low.
20
20
XHG
2.1V
—
A.GND
10
VCC
Preamplifier voltage gain selection. Gain is
boosted by 6dB when the logical voltage is
Low compared to when the logical voltage is
High.
Power supply (5V) connection.
—
VCC
1.2V
1k
11
147
11
FCSET
3.8V
Filter cutoff frequency setting resistor
connection. Connect the filter cutoff
frequency setting resistor RF between this
pin and VCC in order to set the cutoff
frequency.
A.GND
VCC
12
MMVA
0.5V
147
12
1.2V
Time domain filter 1st monostable
multivibrator pulse width setting. Connect
the 1st monostable multivibrator pulse width
setting resistor RA between this pin and
A.GND.
A.GND
13
A.GND
14
FILTER
OUTB
Analog system GND connection.
—
VCC
3.4V
140
140
14
15
15
FILTER
OUTA
16
(NC)
17
PRE
OUTB
3.4V
Filter differential outputs.
300µ
A.GND
300µ
Not connected.
VCC
3.4V
140
140
17
19
19
PRE
OUTA
3.4V
200µ
A.GND
200µ
–4–
Preamplifier differential outputs.
CXA3010Q
Pin
No.
Symbol
Pin
voltage
21
HEAD 1B
—
22
HEAD 1A
—
23
HEAD 0B
—
24
HEAD 0A
—
25
26
WCLD
5V
when
XWG
= High
Equivalent circuit
Description
24 23 22 21
Magnetic head input/output connections.
Connect the recording/playback magnetic
head to these pins, and connect the center
tap to VCC. When the logical voltage for
Pin 7 (XS1) is Low, the HEAD1 system is
active; when the logical voltage is High, the
HEAD0 system is active.
A.GND
VCC
1.2V
147
25
147
26
27
WCMD
147
3.8V
when
XWG
= Low
27
WCHD
A.GND
5V
when
XEG
= High
28
2M write current setting resistor connection.
Connect the write current setting resistor
RWHD between this pin and VCC to set the
write current.
VCC
147
28
IESET
D.GND
1.6M write current setting resistor connection.
Connect the write current setting resistor
RWMD between this pin and VCC to set the
write current.
1.2V
3.8V
when
XEG
= Low
29
1M write current setting resistor connection.
Connect the write current setting resistor
RWLD between this pin and VCC to set the
write current.
Erase current setting resistor connection.
Connect the erase current setting resistor RE
between this pin and VCC to set the erase
current.
A.GND
—
Digital system GND connection.
VCC
30
ERA0
—
30
31
31
ERA1
Erase current connection for the HEAD0
system.
Erase current connection for the HEAD1
system.
—
A.GND
–5–
CXA3010Q
Pin
No.
Symbol
Pin
voltage
Equivalent circuit
Description
VCC
162k
1k
32
XPS
—
32
2.1V
A.GND
–6–
Power saving signal input.
When the logical voltage is Low, the IC is in
power saving mode. In power saving mode,
only the power supply on/off detector operates.
CXA3010Q
Electrical Characteristics
Current Consumption
Item
(Ta = 25°C, VCC = 5V)
Symbol
Current consumption
ICCR
in read mode
Measure- MeasureMin.
ment circuit ment Point
Conditions
Typ. Max.
Unit
XWG = High
—
—
16
26
36
mA
XWG = Low,
Current consumption
ICCWE
XEG = Low
in write/erase mode
—
—
7
13
19
mA
Current consumption
ICCPS
in power saving mode
—
—
—
0.95
1.9
mA
XPS = Low
Power Supply Monitoring System
Item
Symbol
Power supply on/off
detector threshold
voltage
VTH
Power on output
saturation voltage
VSP
(Ta = 25°C)
Measure- MeasureMin.
ment circuit ment Point
Conditions
VCC = 3.5V
I = 1mA
Unit
—
—
3.5
3.9
4.3
V
—
—
—
—
0.5
V
Read System
Item
Typ. Max.
(Ta = 25°C, VCC = 5V)
Symbol
Measure- MeasureMin.
ment circuit ment Point
Conditions
Typ. Max.
Unit
Preamplifier voltage gain
GVLO
Low gain/outer track
f = 100kHz
OTF = High, XHG = High
1
D, E
37.1
39.0
40.6
dB
Preamplifier voltage gain
GVLI
Low gain/inner track
f = 100kHz
OTF = Low, XHG = High
1
D, E
40.1
42.0
43.6
dB
Preamplifier voltage gain
GVHO
High gain/outer track
f = 100kHz
OTF = High, XHG = Low
1
D, E
43.1
45.0
46.6
dB
Preamplifier voltage gain
GVHI
High gain/inner track
f = 100kHz
OTF = Low, XHG = Low
1
D, E
46.1
48.0
49.6
dB
Preamplifier
frequency response
BW
GV/GV (100kHz) = –3dB
1
D, E
5
—
—
MHz
Preamplifier input
conversion noise
voltage
EN
Band Width
= 400Hz to 1MHz, VI = 0
1
D, E
—
2.0
2.9
nV/√ Hz
Preamplifier
differential output
offset voltage
VOFSP VI = 0
1
D, E
–500
—
+500
mV
Filter differential
output offset voltage
VOFSF VI = 0
1
B, C
–100
—
+100
mV
Filter differential
output voltage
amplitude
VOF
1
B, C
2.8
—
—
Vp-p
–7–
CXA3010Q
Read System
Item
(Ta = 25°C, VCC = 5V)
Symbol
Unit
1
A, F
2.25
2.5
2.75
µs
X360 = Low, XHD = High
(1.6M mode)
or
X360 = X, XHD = Low
(2M mode) Refer to Fig. 1
1
A, F
1.13 1.25
1.38
µs
Refer to Fig. 1
1
A
260
400
540
ns
IOL = 2mA
1
A
—
—
0.5
V
VOH
IOH = –0.4mA
1
A
2.8
—
—
V
tr
RL = 2kΩ
CL = 20pF
1
A
—
—
100
ns
tf
RL = 2kΩ
CL = 20pF
1
A
—
—
100
ns
PS
VI = 0.25mVp-p to
3.5mVp-p
XHG = Low, XHD = Low
OTF = Low
f = 125kHz, 2M/
inner track mode
Refer to Fig. 1
1
A
—
—
1
%
T1
Read data pulse width
T2
Read data output low
VOL
output voltage
Peak shift∗2
Typ. Max.
X360 = High, XHD = High
(1M mode)
Time domain filter
monostable
multivibrator pulse
width
Read data output
high output voltage
Read data output∗1
rise time
Read data output∗1
fall time
Measure- MeasureMin.
ment circuit ment Point
Conditions
∗1 Read data output: 0.5V to 2.4V
∗2 Signal input level
Low gain/outer track: VI = 0.5mVp-p to 10mVp-p
Low gain/inner track: VI = 0.5mVp-p to 7mVp-p
High gain/outer track: VI = 0.25mVp-p to 5mVp-p
High gain/inner track: VI = 0.25mVp-p to 3.5mVp-p
–8–
CXA3010Q
External
Comparator Output
(Measurement point F)
Read data output
(Measurement point A)
1.4V
T1
T2
TA
TB
Fig. 1 1st and 2nd monostable multivibrator pulse width precision
and peak shift measurement conditions
• 1st monostable multivibrator pulse width precision
When X360 = High and XHD = High:
ETM1 = (
T1
–1) × 100 [%]
2.5µs
When X360 = Low and XHD = High, or X360 = X and XHD = Low:
ETM1' = (
T1
–1) × 100 [%]
1.25µs
• 1st monostable multivibrator pulse width = T2
• Peak shift
PS =
1
2
TA – TB
TA + TB
× 100 [%]
–9–
CXA3010Q
Read System (Filters)
Item
1M
outer
track
1M
inner
track
1.6M/
2M
outer
track
(Ta = 25°C, VCC = 5V)
Symbol
Peak frequency
fo1
Peak voltage
gain∗3
Gp1
Frequency
response (1)
G11
Frequency
response (2)
G12
Peak frequency
fo2
Peak voltage
gain∗3
Gp2
Frequency
response (1)
G21
Frequency
response (2)
G22
Peak frequency
fo3
Peak voltage
gain∗3
Gp3
Frequency
response (1)
G31
Frequency
response (2)
G32
Conditions
X360 = High
XHD = High
OTF = High
Refer to Fig. 2
at f01
Refer to Fig. 2
at 1/3f01
Refer to Fig. 2
at 3f01
X360 = High
XHD = High
OTF = Low
Refer to Fig. 2
at f02
Refer to Fig. 2
at 1/3f02
Refer to Fig. 2
at 3f02
X360 = Low
XHD = High
OTF = High
(1.6M/outer track)
or
X360 = X
XHD = Low
OTF = High
(2M/outer track)
Refer to Fig. 2
at f03
Refer to Fig. 2
at 1/3f03
Refer to Fig. 2
at 3f03
– 10 –
Measure- MeasureMin.
ment circuit ment Point
Typ. Max. Unit
153.0 170.0 187.0 kHz
1
B, C
1
D, E
B, C
4.3
6.2
7.8
dB
1
B, C
–7.6 –7.1
–6.6
dB
1
B, C
–24.7 –22.8 –21.2 dB
1
B, C
163.8 182.0 200.2 kHz
1
D, E
B, C
4.3
6.2
7.8
dB
1
B, C
–7.6 –7.1
–6.6
dB
1
B, C
–24.7 –22.8 –21.2 dB
1
B, C
288.0 320.0 352.0 kHz
1
D, E
B, C
4.4
6.3
7.9
dB
1
B, C
–7.6 –7.1
–6.6
dB
1
B, C
–25.0 –23.1 –21.5 dB
CXA3010Q
Item
1.6M/
2M
inner
track
Symbol
Peak frequency
fo4
Peak voltage
gain∗3
Gp4
Frequency
response (1)
G41
Frequency
response (2)
G42
Measure- MeasureMin.
ment circuit ment Point
Conditions
X360 = Low
XHD = High
OTF = Low
(1.6M/inner track)
or
X360 = X
XHD = Low
OTF = Low
(2M/inner track)
Refer to Fig. 2
at f04
Refer to Fig. 2
at 1/3f04
Refer to Fig. 2
at 3f04
1
B, C
310.5 345.0 379.5 kHz
1
D, E
B, C
5.9
7.8
9.4
dB
1
B, C
–8.5
–8.0 –7.5
dB
1
B, C
–36.9 –35.0 –33.4 dB
∗3 Gpn = 20 log10 (VFilterout/Vpreout)
VFilterout = Filter differential output voltage
(n = 1 to 4)
[dB]
Gpn
Gn1
Gn2
1/3fon
fon
3fon
f [Hz]
(n = 1 to 4)
Fig. 2. Filter frequency response measurement conditions
– 11 –
Typ. Max. Unit
CXA3010Q
Write/Erase System
Item
(Ta = 25°C, VCC = 5V)
Symbol
Measure- MeasureMin.
ment circuit ment Point
Conditions
Typ. Max.
Unit
Damping resistor
precision
RD
VCC = 0V
SW2 = b
2
J', K'
L', M'
–20
—
+20
%
Write current output
precision∗4
EW
XWG = Low
RW = 1.3kΩ
2
J, K
L, M
–7
—
+7
%
Write current output
unbalance
DW
XWG = Low
RW = 1.3kΩ
2
J, K
L, M
–1
—
+1
%
Head I/O pin leak
current for writes
ILKW
XWG = Low
2
J, K
L, M
—
—
10
µA
Write head pin
current at saturation
ISW
XWG = Low
RW = 1.3kΩ
VSW = 1V
SW1 = b
2
J, K
L, M
2.47
2.70
2.97
mAo-p
Erase current output
precision∗5
EE
XEG = Low
RE = 1.3kΩ
2
N, O
–10
—
+10
%
Erase current output
pin leak current
ILKE
XEG = Low
2
N, O
—
—
10
µA
Erase current rise
time∗6
TRE
Defined at 10% to 90%
of IE
2
N', O'
0.6
1.3
2.1
µs
Erase current fall
time∗6
TFE
Defined at 90% to 10%
of IE
2
N', O'
0.6
1.3
2.1
µs
∗4 Write current output precision EW = (
IW
– 1) × 100 [%]
2.72mAo-p
∗5 Erase current output precision EE = (
IE
– 1) × 100 [%]
9.08mA
∗6 Erase current rise/fall times show the values when the output pin is shorted with the power supply.
Logic Input Block
Item
(Ta = 25°C, VCC = 5V)
Symbol
Measure- MeasureMin.
ment circuit ment Point
Conditions
Typ. Max.
Unit
Digital signal input
low input voltage
VLD
2
BCDE
FGHIP
—
—
0.8
V
Digital signal input
high input voltage
VHD
2
BCDE
FGHIP
2.0
—
—
V
Schmitt-type digital
signal input low input VLSD
voltage
2
A
—
—
0.8
V
Schmitt-type digital
signal input high
input voltage
VHSD
2
A
2.0
—
—
V
Digital signal input
low input current
ILD
VL = 0V
2
ABCDE
FGHIP
–20
—
—
µA
Digital signal input
high input current
IHD
VH = 5V
2
ABCDE
FGHIP
—
—
10
µA
– 12 –
CXA3010Q
Electrical Characteristics Measurement Circuit 1
D
E
–1/2Vi
1/2Vi
b
SW6
a
a
b
a
b
a
b
SW5
SW4
20
19
18
XHG
PREOUTA
X360
PREOUTB
21
HEAD1B
WCLD
22
HEAD1A
25
1.3k
23
HEAD0B
24
HEAD0A
∗7
3300p
17
NC
3300p
26 WCMD
FILTER
15
OUTA
C
27 WCHD
FILTER
OUTB 14
B
1.3k
1.3k
28 IESET
F
12k
16
External
Comparator
A.GND 13
1.3k
CXA3010Q
29 D.GND
MMVA 12
27k
FCSET 11
30 ERA0
3.26k
5V
VCC 10
XWG
XEG
XS1
2
3
4
5
6
7
SW1
a
b
XHD
OTF
XCI
1
RD
32
XWD
XPS
POWER ON
31 ERA1
9
SW3
8
a
SW2
b a
b
A
Note) Unless otherwise specified, switches are assumed to be set to “a”.
∗7 CR time constant of external comparator input stage is equivalent to the time constant of comparater with
a built-in IC.
– 13 –
CXA3010Q
Electrical Characteristics Measurement Circuit 2
SW1
I
H
a
M'
a
b a
23
22
21
20
19
18
PREOUTA
X360
b
XHG
WCLD
b a
HEAD1B
25
1.3k
J'
K'
HEAD1A
24
VSW
HEAD0B
b a
HEAD0A
SW2
L'
b
J
K
PREOUTB
L
M
17
16
NC
26 WCMD
FILTER 15
OUTA
27 WCHD
FILTER
14
OUTB
1.3k
1.3k
28 IESET
A.GND 13
1.3k
CXA3010Q
29 D.GND
MMVA 12
27k
a
N
P
2
3
4
5
6
7
A
XHD
OTF
XS1
1
XEG
XPS
32
XWG
b
SW3
VCC 10
XCI
200
5V
31 ERA1
RD
O'
3.26k
XWD
O
FCSET 11
30 ERA0
b
a
POWER ON
N'
200
9
8
B
C
D
E
F
Note) Unless otherwise specified, switches are assumed to be set to "a".
– 14 –
G
CXA3010Q
Description of Operation
(1) Read system
Preamplifier
The preamplifier amplifies input signals. The voltage gain can be switched between 39dB and 45dB, using
Pin 20. In addition, an additional 3dB boost in the voltage gain is possible by setting Pin 8 low.
Filters
The filters differentiate the signals amplified by the preamplifier. The high-band noise components are
attenuated by the low-pass filter. The filters can be switched among four modes, depending on the settings of
Pins 8, 9 and 18. In 1M/outer track mode, the peak frequency fO1 is set by external resistor RF.
fO for the other three modes is switched by the internal settings of the IC, with fO1 used as a reference (1.00).
Active filter block
19 Preamplifier output A
17 Preamplifier output B
Preamplifier output
BPF
LPF
Secondary
fOB = 1.2 × fC
Tertiary
fc: variable
HPF
Primary
fCH = 5kHz
15
Filter output A
14
Filter output B
Amp
Gain : 8dB
Q = 0.577
The center frequency fOB of the BPF is fixed to 1.2 times the cutoff frequency fO of the LPF. The LPF
characteristics are set to Chebyshev (1dB ripple) for 1.6M, 2M/inner track mode only, and to Butterworth for all
other modes.
Pin8
OTF
Pin9
XHD
Pin18
X360
H
H
H
1M/outer track: Butterworth
1.00
L
H
H
1M/inner track: Butterworth
1.07
H
H
L
1.6M/outer track: Butterworth
1.88
L
H
L
1.6M/inner track: Chebyshev 1dB ripple
2.03
H
L
X
2M/outer track: Butterworth
1.88
L
L
X
2M/inner track: Chebyshev 1dB ripple
2.03
LPF characteristics
fo ratio
The formula for determining the peak frequency fO1 for 1M/outer track mode is shown below:
fo1 = 534/RF + 6.2 [kHz] RF: filter setting resistance [kΩ]
– 15 –
CXA3010Q
Comparator
The comparator detects the crosspoint of the filter differential output.
Time domain filter
The time domain filter converts the comparator output to read data.
This filter is equipped with two monostable multivibrators. 1st monostable multivibrator eliminates
unnecessary pulses, and 2nd monostable multivibrator determines the pulse width of the read data.
The 1st monostable multivibrator pulse width T1 is determined by the resistor RA between Pin 12 and
A.GND. T1 can be switched as follows by the settings of Pins 9 and 18:
When XHD = High and X360 = High T1(1M) = 88RA + 124 [ns] RA [kΩ]
When XHD = High and X360 = Low or
XHD = Low and X360 = X T1(1.6M/2M) = 44RA + 62 [ns]
The pulse width for 2nd monostable multivibrator is fixed at 400ns.
(2) Write system
Write data input through Pin 2 is frequency-divided by the T flip-flop and generates the recording current for
the head. The recording current can be switched by the settings of Pins 9 and 18.
The write current IW is set by the resistors RW connected between Pin 25 and VCC, between Pin 26 and VCC,
and between Pin 27 and VCC.
IW = 3.53/RW [mAO-P] RW [kΩ]
Furthermore, the inner/outer track write current IW can be changed for each mode by switching Pin 4.
However, the current ratio between the inner and outer tracks is fixed.
(3) Erase current
The erase current IE is set by the resistor RE between Pin 28 and VCC.
IE = 11.8/RE [mA] RE [kΩ]
Pins 30 and 31 are constant current outputs.
In addition, in order to minimize the R/W head crosstalk time constants are provided for the rise and fall of
the erase current. For details, refer to page 20 and page 21.
(4) Power on/off detection system
The power on/off detection system detects a reduced voltage in the supply voltage.
When VCC is below the specified value, the write system and erase system cease operation, disabling the
write and erase functions.
Notes on Operation
• Select the voltage gain so that the preamplifier output amplitude is 1Vp-p or less.
If the preamplifier output amplitude exceeds 1Vp-p, the filter output waveform becomes distorted.
• Observe the following point when mounting this device.
• The ground should be as large as possible.
– 16 –
CXA3010Q
24
23
22
19
20
21
PREOUTB
X360
PREOUTA
XHG
HEAD1B
HEAD1A
HEAD0A
HEAD0B
Application Circuit
18
17
WCLD
16
25
NC
RWLD
WCMD
FILTER
26
PREAMP
RWMD
15
DIFF + LPF
(BPF)
WCHD
FILTER
OUTA
FILTER
27
14
RWHD
IESET
OUTB
VCC
A.GND
28
13
WRITE
DRIVER
RE
COMP
D.GND
MMVA
29
12
RA
ERA0
FCSET
ERASE
DRIVER
30
ERA1
11
RF
CONTROL
LOGIC
POWER
MONITOR
31
TIME
DOMAIN
FILTER
VCC
10
XHD
XPS
32
9
6
8
OTF
7
XS1
5
XEG
XCI
RD
XWD
POWER ON
4
3
XWG
2
1
Application circuits shown are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for
any problems arising out of the use of these circuits or for any infringement of third party patent and other right due to same.
Notes
1. If a resistor for setting the write current is not used, connect that pin to VCC. However, if connected to VCC,
do not select that mode for writes, as doing so could cause a large current flow that could damage the IC.
2. When using two modes (1M and 2M), connect X360 (Pin 18) to VCC and set XHD (Pin 9) high or low to
switch modes.
– 17 –
CXA3010Q
Filter Frequency Response
The LPF characteristics are set to Chebyshev (1dB ripple) for 1.6M, 2M/inner track mode only, and to
Butterworth for the other modes. In addition, a custom selection can be made between Chebyshev (1dB ripple)
and Butterworth for the filter characteristics for 1.6M, 2M/inner track mode only; in that case, it is not possible
to change between 1.6M/inner track and 2M/inner track. As a result, the 1.6M and 2M characteristics and fc
ratio are identical.
B.P.F
Q = 0.577
(Differential characteristics)
fOB
1M/outer track, inner track
1.6M, 2M/outer track
1.6M, 2M/inner track
L.P.F
L.P.F
Tertiary Butterworth
Tertiary Chebyshev
1dBRp
fcn
(High-band noise cutoff)
fc4
(n = 1, 2, 3)
(Comprehensive characteristics)
fon
fo4
The BPF center frequency fOB is fixed at 1.2 times the LPF cutoff frequency.
fOB = 1.2fc
In the comprehensive characteristics, the relationship between the peak frequencies fo and fc is as follows,
depending on the differences of the LPF type:
Butterworth characteristics
fcn = 1.28fon (n = 1, 2, 3)
Chebyshev (1dB ripple characteristics)
fc4 = 1.12fo4
– 18 –
CXA3010Q
Custom Selection of Filters
Regarding the LPF cutoff frequency fo, assuming the LPF cutoff frequency fC1 in 1M/outer track mode as 1.00,
the fc ratio can be selected for the other three modes.
In addition, the LPF characteristics are set to Chebyshev (1dB ripple) for 1.6M, 2M/inner track mode only, and
to Butterworth for the other modes. However, a custom selection can be made between Chebyshev (1dB
ripple) and Butterworth for the filter characteristics for 1.6M, 2M/inner track mode only. (However, the 1.6M and
2M characteristics and fc ratio are identical.)
Note that the BPF center frequency fOB is fixed at 1.2 times fC. In addition, the ratio between fO and fC conforms
with the relationship shown on the previous page.
Mode
LPF type
1M/outer track
Butterworth
1.0
1M/inner track
Butterworth
1.07 , 1.14 , 1.23 , 1.33 , 1.45 , 1.60 , 2.00
1.6M, 2M/outer track
Butterworth
1.33 , 1.39 , 1.45 , 1.52 , 1.60 , 1.68 , 1.78 ,
1.88 , 2.00 , 2.13 , 2.29 , 2.46 , 2.67
1.6M, 2M/inner track
Butterworth
Chebyshev (1dB ripple)
1.33 , 1.39 , 1.45 , 1.52 , 1.60 , 1.68 , 1.78 ,
1.88 , 2.00 , 2.13 , 2.29 , 2.46 , 2.67
fc ratio when fC1 is assumed as 1
∗ The boxed ratio indicates the setting for the CXA3010Q.
Write Current Setting Method
Assuming the outer track as 1.00, the write current ratio is fixed within the IC for each mode. The write current
for the outer track is set in each mode by the resistors connected to Pins 25, 26, and 27. The current ratio for
the inner track in each mode can be selected according to the following table.
The setting is for the outer track current when XCI is Low, and for the inner track current when XCI is High.
Write current inner track setting ratios
Track
Write current inner track setting ratio
1M mode
1.00 , 0.92 , 0.86 , 0.80 , 0.75 , 0.71 , 0.66 , 0.63
1.6M mode
1.00 , 0.92 , 0.86 , 0.80 , 0.75 , 0.71 , 0.66 , 0.63
2M mode
1.00 , 0.92 , 0.86 , 0.80 , 0.75 , 0.71 , 0.66 , 0.63
∗ The boxed ratio indicates the setting for the CXA3010Q.
The write current setting for the outer track is determined according to the following formula:
IW = 3.53/RW (mAO-P) RW: [kΩ]
– 19 –
CXA3010Q
Erase Current Setting Method
The erase circuit in this IC generates the erase current by using a constant current circuit; the current value is
determined according to the following formula, based on the resistor RE connected to Pin 28.
IE = 11.8/RE [mA] RE: [kΩ]
Erase Current Rise and Fall Times (Refer to Fig. 3)
In this IC, time constants are provided for the erase current rise and fall in order to prevent bad writes due to
write head crosstalk.
The current rise and fall times of the constant current circuit in the IC is 1.3µs, but the potential difference VA
that develops in the head when the erase current is turned on and off is as shown below. Because the circuit
clamp is generated according to this VA value, the rise and fall times differ. Therefore, refer to the explanation
provided below when using this IC.
VA = L × di (L: head inductance; di: erase current; dt: 1.3µs)
dt
1. When erase current turns on
(1) When the potential difference VA in the head is (VCC – 1.8V) or more
When the current turns on, potential difference VA is generated in the head; if VA is equal to (VCC –1.8V) or
more, the erase output transistor Q1 shown in the circuit in Fig. 3 becomes saturated, and the pin voltage is
clamped at approximately 1.8V. Voltage driving results, and the rise time Tr is as follows:
Tr =
L × IE
× 1 [µs] L: [µH], IE: [mA], VCC: [V]
VCC – 1.8
1000
(2) When the potential difference VA in the head is (VCC – 1.8V) or less
In this case, because VA does not reach clamping level, the rise time becomes the rise time of IE in the
circuits within the IC.
Current rise time Tr = 1.3µs
– 20 –
CXA3010Q
2. When erase current turns off
(1) When the potential difference VA in the head is 0.7V or more
When the current turns off, potential difference VA is generated in the head by counterelectromotive force; if
VA is equal to approximately 0.7V or more, the positive protective diode D1 shown in the circuit in Fig. 3 turns
on, and the pin voltage is clamped at approximately (VCC + 0.7V). As when the erase current is turned on,
voltage driving results, and the fall time Tf is as follows:
1
Tf = L × IE ×
[µs] L: [µH], IE: [mA]
1000
0.7
(2) When the potential difference VA in the head is 0.7V or less
In this case, because VA does not reach clamping level, the fall time becomes the fall time of IE in the circuits
within the IC.
Current fall time Tf = 1.3µs
Circuits within IC
Vcc
IE
D1 (positive protective diode)
L
For ERA1
30
ERA0
Q1
Q2
High = approx. 2.25V
Low = 0V
D2
(negative protective diode)
IE (rise/fall time: 1.3µs)
GND
Fig. 3. Erase equivalent circuit
However, in the specifications, because the value indicated is with the erase head pin shorted with the power
supply so that the head voltage described earlier is not generated, the rise and fall times for the constant
current circuit itself are given.
– 21 –
CXA3010Q
Voltage gain
0
–2
–4
–6
0
Phase
–8
45
–10
90
VCC = 5V, Ta = 25°C
XHG = High, Low
Phase [deg]
Normalized preamplifier voltage gain [dB]
Normalized preamplifier voltage gain and phase vs. Frequency
135
180
100k
1M
10M
f – Frequncy [Hz]
1M/outer track
1M/inner track
180
Phase [deg]
0
–40
–60
–90
VCC = 5V, Ta = 25°C
RF = 3.26kΩ
40k
100k
90
–20
0
–40
–60
–90
VCC = 5V, Ta = 25°C
RF = 3.26kΩ
–80
400k
1M
4M
–180
10k
f01 = 170 [kHz] Frequency [Hz]
–60
–90
Normalized filter voltage gain [dB]
0
–40
Phase [deg]
Normalized filter voltage gain [dB]
0
90
VCC = 5V, Ta = 25°C
RF = 3.26kΩ
40k
100k
400k
4M
–180
180
–20
10k
1M
1.6M, 2M/inner track
Voltage gain
AAAAA
AAAAA
400k
180
Phase
–80
100k
f02 = 182 [kHz] Frequency [Hz]
1.6M, 2M/outer track
0
40k
Voltage
gain
90
–20
Phase
–40
–60
–90
VCC = 5V, Ta = 25°C
RF = 3.26kΩ
–80
1M
4M
–180
10k
40k
100k
400k
f04 = 345 [kHz] Frequency [Hz]
f03 = 320 [kHz] Frequency [Hz]
– 22 –
0
1M
4M
–180
Phase [deg]
10k
Voltage gain
Phase [deg]
90
–20
–80
Phase
0
Voltage gain
Normalized filter voltage gain [dB]
0
Normalized filter voltage gain [dB]
180
Phase
Normalized preamplifier voltage gain + filter
voltage gain NGv vs. Ambient temperature Ta
1.50
1.00
11
VCC = 5V
f = 100kHz
NGV = GV/GV (Ta = 25°C)
RF
3.26kΩ
VCC
0.50
–20
0
20
40
60
80
Ta – Ambient temperature [°C]
NGv – Normalized preamplifier voltage gain + filter voltage gain
NGv – Normalized preamplifier voltage gain + filter voltage gain
CXA3010Q
Normalized preamplifier voltage gain + filter
voltage gain NGv vs. Supply voltage Vcc
1.50
1.00
11
Ta = 25°C
f = 100kHz
NGV = GV/GV (VCC = 5V)
5.0
6.0
Vcc – Supply voltage [V]
1.05
Nf0 – Normalized filter peak frequency
Nf0 – Normalized filter peak frequency
4.0
Normalized filter peak frequency Nf0 vs.
Supply voltage Vcc
1.05
1.00
11
VCC = 5V
Nf0 = f0/f0 (Ta = 25°C)
RF
3.26kΩ
1.00
11
Ta = 25°C
Nf0 = f0/f0 (VCC = 5V)
VCC
0
20
40
60
RF
3.26kΩ
VCC
0.95
80
4.0
5.0
6.0
Ta – Ambient temperature [°C]
Vcc – Supply voltage [V]
Normalized 1st monostable multivibrator pulse
width NTA vs. Ambient temperature Ta
Normalized 1st monostable multivibrator
pulse width NTA vs. Supply voltage Vcc
1.05
1.00
12
VCC = 5V
NTA = T1/T1 (Ta = 25°C)
0.95
–20
RA
27kΩ
0
20
40
60
Ta – Ambient temperature [°C]
80
NTA – Normalized 1st monostable multivibrator pulse width
NTA – Normalized 1st monostable multivibrator pulse width
3.26kΩ
VCC
0.50
Normarized filter peak frequency Nf0 vs.
Ambient temperature Ta
0.95
–20
RF
– 23 –
1.05
1.00
12
Ta = 25°C
NTA = T1/T1 (VCC = 5V)
0.95
4.0
RA
5.0
Vcc – Supply voltage [V]
27kΩ
6.0
CXA3010Q
Normalized read data pulse width NTB vs.
Ambient temperature Ta
Normalized read data pulse width NTB vs.
Supply voltage Vcc
1.05
NTB – Normalized read data pulse width
NTB – Normalized read data pulse width
1.05
1.00
VCC = 5V
NTB = T2/T2 (Ta = 25°C)
0.95
–20
0
20
40
60
Ta = 25°C
NTB = T2/T2 (VCC = 5V)
0.95
80
5.0
6.0
Vcc – Supply voltage [V]
Normalized write current NIw vs.
Ambient temperature Ta
Normalized write current NIw vs.
Supply voltage Vcc
1.00
25
26
27
RW1 RW2 RW3
VCC = 5V
NIW = IW/IW (Ta = 25°C)
1.3 1.3 1.3
kΩ kΩ kΩ
VCC VCC VCC
0
20
40
60
Ta – Ambient temperature [°C]
NIw – Normalized write current
1.05
0.95
–20
1.00
Ta = 25°C
NIW = IW/IW (VCC = 5V)
0.95
80
4.0
1.3 1.3 1.3
kΩ kΩ kΩ
VCC VCC VCC
5.0
6.0
Normalized erase current NIE vs.
Supply voltage Vcc
1.05
NIE – Normalized erase current
1.05
1.00
28
VCC = 5V
NIE = IE/IE (Ta = 25°C)
RE
1.3kΩ
1.00
28
Ta = 25°C
NIE = IE/IE (VCC = 5V)
0
20
40
60
RE
1.3kΩ
VCC
VCC
0.95
–20
25 26 27
RW1 RW2 RW3
Vcc – Supply voltage [V]
Normalized erase current NIE vs.
Ambient temperature Ta
NIE – Normalized erase current
4.0
Ta – Ambient temperature [°C]
1.05
NIw – Normalized write current
1.00
0.95
80
Ta – Ambient temperature [°C]
4.0
5.0
Vcc – Supply voltage [V]
– 24 –
6.0
CXA3010Q
11
VCC = 5V
Ta = 25°C
f01 = 534/RF + 6.2
RF
250
VCC
200
150
2.0
3.0
1st monostable multivibrator pulse width TA vs. RA
TA – 1st monostable multivibrator pulse width [µs]
1M/outer track peak frequency f01 [kHz]
1M/outer track peak frequency f01 vs. RF
10.0
12
5.0
VCC = 5V
Ta = 25°C
T1 1M = 88RA + 124
T1 2M = 44RA + 62
RA [kΩ]
RA
T1 1M
1.0
T1 2M
0.5
0.3
4.0
3
5
10
RF [kΩ]
Write current IW vs. RW
Erase current IE vs. RE
50
IE – Erase current [mA]
IW – Write current [mA]
50
10
VCC = 5V
Ta = 25°C
IW = 3.53/RW
RW [kΩ]
5
25 26 27
RW1 RW2 RW3
10
5
27
VCC = 5V
Ta = 25°C
IE = 11.8/RE
RE [kΩ]
RE
1
1
0.5
VCC VCC VCC
0.1
0.5
VCC
1
5
0.5
10
RW [kΩ]
VTH – Power supply on/off detector threshold voltage [V]
50
RA [kΩ]
4.1
4.0
3.9
3.8
3.7
0
20
40
60
Ta – Ambient temperature [°C]
5
RE [kΩ]
Power supply on/off detector threshold
voltage VTH vs. Ambient temperature Ta
3.6
–20
1
80
– 25 –
10
100
CXA3010Q
Package Outline
Unit: mm
32PIN QFP (PLASTIC)
9.0 ± 0.2
24
0.1
+ 0.35
1.5 – 0.15
+ 0.3
7.0 – 0.1
17
16
32
9
(8.0)
25
1
+ 0.2
0.1 – 0.1
0.8
0.24
M
+ 0.1
0.127 – 0.05
0° to 10°
PACKAGE MATERIAL
EPOXY RESIN
SONY CODE
QFP-32P-L01
LEAD TREATMENT
SOLDER PLATING
EIAJ CODE
QFP032-P-0707
LEAD MATERIAL
42 ALLOY
PACKAGE MASS
0.2g
JEDEC CODE
– 26 –
0.50
8
+ 0.15
0.3 – 0.1
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