CREE CXXXDA1000-SXX000 Direct attach led technology rectangular led rf performance Datasheet

Direct Attach DA1000™ LEDs
CxxxDA1000-Sxx000
Data Sheet
Cree’s Direct Attach DA1000 LEDs are the next generation of solid-state LED emitters that combine highly efficient
InGaN materials with Cree’s proprietary device technology and silicon-carbide substrates to deliver superior value for
the general-illumination market. The DA1000 LEDs are among the brightest in the lighting market while delivering
a low forward voltage, resulting in a very bright and highly efficient solution. The bondpad-down design allows for
a eutectic direct die-attach process, eliminating the need for wire bonds, and enables superior performance from
improved thermal management.
FEATURES
APPLICATIONS
•
Direct Attach LED Technology
•
•
Rectangular LED RF Performance
−
Aircraft
–
−
Decorative Lighting
−
Task Lighting
−
Outdoor Illumination
450 & 460 nm – 485 mW min
General Illumination
•
High Reliability - Eutectic Attach
•
Low Forward Voltage (Vf) – 3.15 V Typical at 350 mA
•
Maximum DC Forward Current – 1000 mA
•
White LEDs
•
InGaN Junction-Down Design for Improved Thermal
•
Camera Flash
Management
•
Projection Displays
No Wire Bonds Required
•
Automotive
•
CxxxDA1000-Sxx000 Chip Diagram
A
CPR3ES Rev
Data Sheet:
Top View
Die Cross Section
DA1000 LED
1000 x 1000 μm
Bottom View
Anode (+)
945 x 75 μm
Gap 75 μm
Cathode (-)
945 x 795 μm
t = 335 μm
Subject to change without notice.
www.cree.com
1
Maximum Ratings at TA = 25°C Notes 1,2 & 3
CxxxDA1000-Sxx000
DC Forward Current
1000 mA
Peak Forward Current (1/10 duty cycle @ 1 kHz)
1250 mA
LED Junction Temperature
150°C
Reverse Voltage
5V
Operating Temperature Range
-40°C to +100°C
Storage Temperature Range
-40°C to +100°C
Typical Electrical/Optical Characteristics at TA = 25°C, If = 350 mA
Part Number
Note 2
Forward Voltage (Vf, V)
Reverse Current
[I(Vr=5V), μA]
Full Width Half Max
(λD, nm)
Min.
Typ.
Max.
Max.
Typ.
C450DA1000-Sxx000
2.7
3.15
3.5
2
20
C460DA1000-Sxx000
2.7
3.15
3.5
2
21
Mechanical Specifications
CxxxDA1000-Sxx000
Description
Dimension
Tolerance
P-N Junction Area (μm)
960 x 960
±35
Chip Bottom Area (μm)
1000 x 1000
±35
Chip Top Area (μm)
630 x 630
±45
Chip Thickness (μm)
335
±25
AuSn Bond Pad Width – Anode (um)
75
±15
AuSn Bond Pad Length – Anode (um)
945
±35
AuSn Bond Pad Width – Cathode (um)
795
±35
AuSn Bond Pad Length – Cathode (um)
945
±35
75
±15
3
±0.5
Bond Pad Gap (μm)
AuSn Bond Pad Thickness (μm)
Notes:
1.
2.
3.
Maximum ratings are package-dependent. The above ratings were determined using a Cree 3.45-mm x 3.45-mm SMT package (with silicone
encapsulation and intrinsic AuSn metal die attach) for characterization. Ratings for other packages may differ. Junction temperature should be
characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds).
All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled and operated at 350
mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are within the range of average values
expected by manufacturer in large quantities and are provided for information only. All measurements were made using lamps in T-1¾ packages (with
Hysol OS4000 epoxy encapsulant and intrinsic AuSn metal die attach). Optical characteristics measured in an integrating sphere using Illuminance E.
The maximum forward current is determined by the thermal resistance between the LED junction and ambient. It is crucial for the end-product to be
designed in a manner that minimizes the thermal resistance from the LED junction to ambient in order to optimize product performance.
1200
Maximum Forward Current (mA)
1000
800
600
Rth j-a = 10
Rth j-a = 15
Rth j-a = 20
Rth j-a = 25
400
200
C/W
C/W
C/W
C/W
0
25
50
75
100
125
150
175
Ambient Temperature (C)
Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and DA and DA1000 are trademarks of Cree, Inc.
2
CPR3ES Rev A
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Standard Bins for CxxxDA1000-Sxx000
LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die
from only one bin. Sorted die kit (CxxxDA1000-Sxxxxx) orders may be filled with any or all bins (CxxxDA1000-xxxxx)
contained in the kit. All radiant flux and dominant wavelength values shown and specified are at If = 350 mA.
Radiant Flux (mW)
C450DA1000-S48500
C450DA1000-0325
C450DA1000-0326
C450DA1000-0327
C450DA1000-0328
C450DA1000-0321
C450DA1000-0322
C450DA1000-0323
C450DA1000-0324
C450DA1000-0317
C450DA1000-0318
C450DA1000-0319
C450DA1000-0320
C450DA1000-0313
C450DA1000-0314
C450DA1000-0315
C450DA1000-0316
C450DA1000-0309
C450DA1000-0310
C450DA1000-0311
C450DA1000-0312
625
585
550
515
485
445
447.5
450
452.5
455
Dominant Wavelength (nm)
Radiant Flux (mW)
C460DA1000-S48500
C460DA1000-0325
C460DA1000-0326
C460DA1000-0327
C460DA1000-0328
C460DA1000-0321
C460DA1000-0322
C460DA1000-0323
C460DA1000-0324
C460DA1000-0317
C460DA1000-0318
C460DA1000-0319
C460DA1000-0320
C460DA1000-0313
C460DA1000-0314
C460DA1000-0315
C460DA1000-0316
C460DA1000-0309
C460DA1000-0310
C460DA1000-0311
C460DA1000-0312
625
585
550
515
485
455
457.5
460
462.5
465
Dominant Wavelength (nm)
Note: The radiant-flux values above are representative of the die in a T-1¾ encapsulated 5-mm lamp.
Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and DA and DA1000 are trademarks of Cree, Inc.
3
CPR3ES Rev A
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Relative Light In
Characteristic Curves
150%
100%
50%
0%
0
200
400
600
800
1000
If (mA)
These are representative measurements for the DA LED product. Actual curves will vary slightly for the various radiant
flux and dominant wavelength bins.
Forward Current vs. Forward Voltage
Wavelength Shift vs. Forward Current
1000
2
Dominant Wavelength Shift (nm)
900
800
If (mA)
700
600
500
400
300
200
100
0
1
0
-1
-2
0
1
2
3
4
5
0
200
400
Forward Current vs. Forward Voltage
Relative Intensity vs. Forward Current
Relative Light Intensity Vs Junction Temperature
1000
250%
900
100%
800
200%
95%
700
200
75%
50%
100
70%
0
1
2
3
4
5
200
50
400
75
600
100
800
125
1000
150
Vf (V)
If (mA)
Junction Temperature (°C)
66
55
44
33
22
11
00
25
25
75
75
100
100
125
125
150
150
Voltage
Voltage Shift
Shift Vs
Vs Junction
Junction Temperature
Temperature
Wavelength Shift vs. Forward Current
0.000
0.000
2
95%
-0.050
-0.050
90%
-0.100
-0.100
VoltageShift
Shift(V)
(V)
Voltage
Dominant Relative
Wavelength
(nm)
LightShift
Intensity
50
50
Junction
Junction Temperature
Temperature (°C)
(°C)
Relative Light Intensity Vs Junction Temperature
100%
1000
Dominant
Dominant Wavelength
Wavelength Shift
Shift Vs
Vs Junction
Junction Temperature
Temperature
600
90%
150%
500
85%
400
100%
80%
300
0% 0
65%
0
25
800
If (mA)
DominantWavelength
WavelengthShift
Shift(nm)
(nm)
Dominant
Relative
Light
Intensity
Relative
Light
Intensity
If (mA)
Vf (V)
600
1
85%
80%
0
75%
70%
-1
-0.150
-0.150
-0.200
-0.200
-0.250
-0.250
-0.300
-0.300
65%
25
50
0
200
-2
75
100
Junction
400 Temperature
600 (°C)
125
800
150
1000
-0.350
-0.350
25
25
50
50
75
75
100
100
125
125
150
150
Junction
Junction Temperature
Temperature (°C)
(°C)
If (mA)
Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and DA and DA1000 are trademarks of Cree, Inc.
4
CPR3ES Rev A
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Radiation Pattern
This is a representative radiation pattern for the DA LED product. Actual patterns will vary slightly for each chip.
Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and DA and DA1000 are trademarks of Cree, Inc.
5
CPR3ES Rev A
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
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