Cypress CY7C10191B-10VI 128k x 8 static ram Datasheet

C1019V33
CY7C1019B/
CY7C10191B
128K x 8 Static RAM
Features
• High speed
— tAA = 10, 12, 15 ns
• CMOS for optimum speed/power
• Center power/ground pinout
• Automatic power-down when deselected
• Easy memory expansion with CE and OE options
• Functionally equivalent to CY7C1019
Functional Description
The CY7C1019B/10191B is a high-performance CMOS static
RAM organized as 131,072 words by 8 bits. Easy memory
expansion is provided by an active LOW Chip Enable (CE), an
active LOW Output Enable (OE), and three-state drivers. This
device has an automatic power-down feature that significantly
reduces power consumption when deselected.
Writing to the device is accomplished by taking Chip Enable
(CE) and Write Enable (WE) inputs LOW. Data on the eight I/O
pins (I/O0 through I/O7) is then written into the location specified on the address pins (A0 through A16).
Reading from the device is accomplished by taking Chip
Enable (CE) and Output Enable (OE) LOW while forcing Write
Enable (WE) HIGH. Under these conditions, the contents of
the memory location specified by the address pins will appear
on the I/O pins.
The eight input/output pins (I/O0 through I/O7) are placed in a
high-impedance state when the device is deselected (CE
HIGH), the outputs are disabled (OE HIGH), or during a write
operation (CE LOW, and WE LOW).
The CY7C1019B/10191B is available in standard 32-pin
TSOP Type II and 400-mil-wide SOJ packages. Customers
should use part number CY7C10191B when ordering parts
with 10 ns tAA, and CY7C1019B when ordering 12 and 15 ns
tAA.
ogic Block Diagram
Pin Configurations
SOJ / TSOPII
Top View
A0
A1
A2
A3
I/O0
CE
I/O0
I/O1
VCC
V SS
INPUT BUFFER
I/O1
I/O2
512 x 256 x 8
ARRAY
SENSE AMPS
ROW DECODER
A0
A1
A2
A3
A4
A5
A6
A7
A8
I/O3
I/O2
I/O3
WE
A4
A5
A6
A7
I/O4
I/O5
CE
COLUMN
DECODER
I/O6
POWER
DOWN
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A16
A15
A14
A13
OE
I/O7
I/O6
VSS
VCC
I/O5
I/O4
A12
A11
A10
A9
A8
I/O7
A9
A 10
A 11
A 12
A 13
A 14
A 15
A 16
WE
OE
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
Cypress Semiconductor Corporation
Document #: 38-05026 Rev. *A
•
3901 North First Street
•
San Jose
•
CA 95134 • 408-943-2600
Revised August 13, 2002
CY7C1019B/
CY7C10191B
Selection Guide
7C10191B-10
7C1019B-12
7C1019B-15
Maximum Access Time (ns)
10
12
15
Maximum Operating Current (mA)
150
140
130
Maximum Standby Current (mA)
10
10
10
−
1
1
L
Maximum Ratings
Current into Outputs (LOW) ........................................ 20 mA
(Above which the useful life may be impaired. For user guidelines, not tested.)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Static Discharge Voltage............................................ >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current..................................................... >200 mA
Operating Range
Supply Voltage on VCC to Relative GND[1] .... –0.5V to +7.0V
Range
DC Voltage Applied to Outputs
in High Z State[1] ....................................–0.5V to VCC + 0.5V
Commercial
DC Input Voltage[1].................................–0.5V to VCC + 0.5V
Industrial
Ambient
Temperature[2]
VCC
0°C to +70°C
5V ± 10%
–40°C to +85°C
5V ± 10%
Electrical Characteristics Over the Operating Range
Parameter
Description
Test Conditions
7C10191B-10
7C1019B-12
Min.
Min.
Max.
Max.
VOH
Output HIGH Voltage
VCC = Min.,
IOH = – 4.0 mA
VOL
Output LOW Voltage
VCC = Min.,
IOL = 8.0 mA
VIH
Input HIGH Voltage
2.2
VCC
+ 0.3
2.2
VCC
+ 0.3
VIL
Input LOW Voltage[1]
–0.3
0.8
–0.3
IIX
Input Load Current
GND < VI < VCC
–1
+1
IOZ
Output Leakage
Current
GND < VI < VCC,
Output Disabled
–5
+5
ICC
VCC Operating
Supply Current
VCC = Max.,
IOUT = 0 mA,
f = fMAX = 1/tRC
150
ISB1
Automatic CE
Power-Down Current
—TTL Inputs
Max. VCC, CE > VIH
VIN > VIH or
L
VIN < VIL, f = fMAX
Automatic CE
Power-Down Current
—CMOS Inputs
Max. VCC,
CE > VCC – 0.3V,
L
VIN > VCC – 0.3V,
or VIN < 0.3V, f = 0
ISB2
2.4
7C1019B-15
Min.
2.4
0.4
Max.
2.4
0.4
Unit
V
0.4
V
2.2
VCC
+ 0.3
V
0.8
–0.3
0.8
V
–1
+1
–1
+1
µA
–5
+5
–5
+5
µA
140
130
mA
40
40
40
mA
20
20
20
10
10
10
−
1
1
mA
Capacitance[3]
Parameter
Description
CIN
Input Capacitance
COUT
Output Capacitance
Test Conditions
TA = 25°C, f = 1 MHz,
VCC = 5.0V
Max.
Unit
6
pF
8
pF
Notes:
1. VIL (min.) = –2.0V for pulse durations of less than 20 ns.
2. TA is the “Instant On” case temperature.
3. Tested initially and after any design or process changes that may affect these parameters.
Document #: 38-05026 Rev. *A
Page 2 of 9
CY7C1019B/
CY7C10191B
AC Test Loads and Waveforms
ALL INPUT PULSES
R1 480Ω
R1 480Ω
5V
5V
OUTPUT
3.0V
90%
OUTPUT
30 pF
R2
255Ω
INCLUDING
JIG AND
SCOPE
(a)
R2
255Ω
5 pF
INCLUDING
JIG AND
SCOPE
(b)
90%
10%
GND
10%
≤ 3 ns
≤ 3 ns
THÉVENIN EQUIVALENT
167Ω
1.73V
OUTPUT
Equivalent to:
Switching Characteristics[4] Over the Operating Range
7C10191B-10
Parameter
Description
Min.
Max.
7C1019B-12
Min.
Max.
7C1019B-15
Min.
Max.
Unit
Read Cycle
tRC
Read Cycle Time
tAA
Address to Data Valid
tOHA
Data Hold from Address Change
tACE
CE LOW to Data Valid
10
12
15
ns
tDOE
OE LOW to Data Valid
5
6
7
ns
tLZOE
OE LOW to Low Z
OE HIGH to High
tHZOE
10
10
3
tLZCE
CE LOW to Low
tHZCE
CE HIGH to High Z[5, 6]
tPU
CE LOW to Power-Up
12
3
0
10
ns
7
ns
7
ns
3
6
ns
0
12
ns
ns
0
3
0
15
6
5
ns
3
0
5
CE HIGH to Power-Down
tPD
15
3
0
Z[5, 6]
Z[6]
12
ns
15
ns
[7, 8]
Write Cycle
tWC
Write Cycle Time
10
12
15
ns
tSCE
CE LOW to Write End
8
9
10
ns
tAW
Address Set-Up to Write End
7
8
10
ns
tHA
Address Hold from Write End
0
0
0
ns
tSA
Address Set-Up to Write Start
0
0
0
ns
tPWE
WE Pulse Width
7
8
10
ns
tSD
Data Set-Up to Write End
5
6
8
ns
tHD
Data Hold from Write End
0
0
0
ns
tLZWE
WE HIGH to Low Z[6]
3
3
3
ns
tHZWE
WE LOW to High Z[5, 6]
5
6
7
ns
Notes:
4. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified
IOL/IOH and 30-pF load capacitance.
5. tHZOE, tHZCE, and tHZWE are specified with a load capacitance of 5 pF as in part (b) of AC Test Loads. Transition is measured ±500 mV from steady-state voltage.
6. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device.
7. The internal write time of the memory is defined by the overlap of CE LOW and WE LOW. CE and WE must be LOW to initiate a write, and the transition of any of these
signals can terminate the write. The input data set-up and hold timing should be referenced to the leading edge of the signal that terminates the write.
8. The minimum write cycle time for Write Cycle no. 3 (WE controlled, OE LOW) is the sum of tHZWE and tSD.
Document #: 38-05026 Rev. *A
Page 3 of 9
CY7C1019B/
CY7C10191B
Data Retention Characteristics Over the Operating Range (L Version Only)
Parameter
ICCDR
tCDR
Description
Conditions
VCC for Data Retention
VDR
Data Retention Current
[3]
Chip Deselect to Data Retention Time
tR
Min.
No input may exceed VCC + 0.5V
VCC = VDR = 2.0V,
CE > VCC – 0.3V,
VIN > VCC – 0.3V or VIN < 0.3V
Max.
2.0
V
300
Operation Recovery Time
Unit
µA
0
ns
200
µs
Data Retention Waveform
DATA RETENTION MODE
3.0V
VCC
VDR > 2V
tCDR
3.0V
tR
CE
Switching Waveforms
Read Cycle No. 1[9, 10]
tRC
ADDRESS
tAA
tOHA
DATA OUT
PREVIOUS DATA VALID
DATA VALID
Read Cycle No. 2 (OE Controlled)[10, 11]
ADDRESS
tRC
CE
tACE
OE
tHZOE
tDOE
DATA OUT
tLZOE
HIGH IMPEDANCE
tLZCE
VCC
SUPPLY
CURRENT
tHZCE
HIGH
IMPEDANCE
DATA VALID
tPD
tPU
50%
ICC
50%
ISB
Notes:
9. Device is continuously selected. OE, CE = VIL.
10. WE is HIGH for read cycle.
11. Address valid prior to or coincident with CE transition LOW.
Document #: 38-05026 Rev. *A
Page 4 of 9
CY7C1019B/
CY7C10191B
Switching Waveforms (continued)
Write Cycle No. 1 (CE Controlled)[12, 13]
tWC
ADDRESS
tSCE
CE
tSA
tSCE
tAW
tHA
tPWE
WE
tSD
DATA I/O
tHD
DATA VALID
Write Cycle No. 2 (WE Controlled, OE HIGH During Write)[12, 13]
tWC
ADDRESS
tSCE
CE
tAW
tSA
tHA
tPWE
WE
OE
tSD
DATA I/O
tHD
DATAIN VALID
NOTE 14
tHZOE
Notes:
12. Data I/O is high impedance if OE = VIH.
13. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high-impedance state.
14. During this period the I/Os are in the output state and input signals should not be applied.
Document #: 38-05026 Rev. *A
Page 5 of 9
CY7C1019B/
CY7C10191B
Switching Waveforms (continued)
Write Cycle No. 3 (WE Controlled, OE LOW)[13]
tWC
ADDRESS
tSCE
CE
tAW
tSA
tHA
tPWE
WE
tSD
NOTE 14
DATA I/O
tHD
DATA VALID
tLZWE
tHZWE
Truth Table
CE
OE
WE
I/O0–I/O7
Mode
Power
H
X
X
High Z
Power-Down
Standby (ISB)
X
X
X
High Z
Power-Down
Standby (ISB)
L
L
H
Data Out
Read
Active (ICC)
L
X
L
Data In
Write
Active (ICC)
L
H
H
High Z
Selected, Outputs Disabled
Active (ICC)
Ordering Information
Speed
(ns)
10
12
15
Ordering Code
CY7C10191B-10VC
CY7C1019B-12VC
CY7C1019B-12ZC
CY7C1019B-15VC
CY7C1019B-15VI
CY7C1019B-15ZC
CY7C1019B-15ZI
Document #: 38-05026 Rev. *A
Package
Name
V33
V33
ZS32
V33
V33
ZS32
ZS32
Package Type
32-Lead 400-Mil Molded SOJ
32-Lead 400-Mil Molded SOJ
32-Lead TSOP Type II
32-Lead 400-Mil Molded SOJ
32-Lead 400-Mil Molded SOJ
32-Lead TSOP Type II
32-Lead TSOP Type II
Operating
Range
Commercial
Commercial
Commercial
Commercial
Industrial
Commercial
Industrial
Page 6 of 9
CY7C1019B/
CY7C10191B
Package Diagrams
32-Lead (400-Mil) Molded SOJ V33
51-85033-A
51-85033-*B
Document #: 38-05026 Rev. *A
Page 7 of 9
CY7C1019B/
CY7C10191B
Package Diagrams (continued)
32-Lead TSOP II ZS32
51-85095
All product or company names mentioned in this document may be the trademarks of their respective holders.
Document #: 38-05026 Rev. *A
Page 8 of 9
© Cypress Semiconductor Corporation, 2002. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use
of any circuitry other than circuitry embodied in a Cypress Semiconductor product. Nor does it convey or imply any license under patent or other rights. Cypress Semiconductor does not authorize
its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress
Semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress Semiconductor against all charges.
CY7C1019B/
CY7C10191B
Document Title: CY7C1019B/CY7C10191B 128K x 8 Static RAM
Document Number: 38-05026
REV.
ECN NO.
Issue Date
Orig. of Change
**
109949
09/25/01
SZV
Change from Spec number: 38-01115 to 38-05026
*A
116170
08/14/02
HGK
1. SOJ (400-mil) package outline replacing incorrect
SOJ package
2. Pin for pin compatible with CY7C1019
3. Industrial packages added to Ordering Information
Document #: 38-05026 Rev. *A
Description of Change
Page 9 of 9
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