CY7C1214H 1-Mbit (32K x 32) Flow-Through Sync SRAM Functional Description[1] Features • 32K X 32 common I/O • 3.3V core power supply (VDD) • 2.5V/3.3V I/O power supply (VDDQ) • Fast clock-to-output times — 6.5 ns (for 133-MHz version) • Provide high-performance 2-1-1-1 access rate • User-selectable burst counter supporting Intel® Pentium® interleaved or linear burst sequences • Separate processor and controller address strobes • Synchronous self-timed write • Asynchronous output enable • Available in JEDEC-standard lead-free 100-Pin TQFP package • “ZZ” Sleep Mode option The CY7C1214H is a 32K x 32 synchronous cache RAM designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133-MHz version). A 2-bit on-chip counter captures the first address in a burst and increments the address automatically for the rest of the burst access. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). The synchronous inputs include all addresses, all data inputs, address-pipelining Chip Enable (CE1), depth-expansion Chip Enables (CE2 and CE3), Burst Control inputs (ADSC, ADSP, and ADV), Write Enables (BW[A:D], and BWE), and Global Write (GW). Asynchronous inputs include the Output Enable (OE) and the ZZ pin. The CY7C1214H allows either interleaved or linear burst sequences, selected by the MODE input pin. A HIGH selects an interleaved burst sequence, while a LOW selects a linear burst sequence. Burst accesses can be initiated with the Processor Address Strobe (ADSP) or the cache Controller Address Strobe (ADSC) inputs. Address advancement is controlled by the Address Advancement (ADV) input. Addresses and chip enables are registered at rising edge of clock when either Address Strobe Processor (ADSP) or Address Strobe Controller (ADSC) are active. Subsequent burst addresses can be internally generated as controlled by the Advance pin (ADV). The CY7C1214H operates from a +3.3V core power supply while all outputs may operate either with a +2.5V or +3.3V supply. All inputs and outputs are JEDEC-standard JESD8-5-compatible. Logic Block Diagram ADDRESS REGISTER A0, A1, A A[1:0] MODE BURST Q1 COUNTER AND LOGIC Q0 CLR ADV CLK ADSC ADSP DQD DQD BWD BYTE BYTE WRITE REGISTER WRITE REGISTER DQC DQC BWC BYTE BYTE WRITE REGISTER WRITE REGISTER DQB DQB BWB MEMORY ARRAY SENSE AMPS OUTPUT BUFFERS DQs BYTE BYTE WRITE REGISTER WRITE REGISTER DQA BWA BWE DQA BYTE BYTE WRITE REGISTER WRITE REGISTER INPUT REGISTERS GW ENABLE REGISTER CE1 CE2 CE3 OE ZZ SLEEP CONTROL Note: 1. For best-practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com. Cypress Semiconductor Corporation Document #: 38-05671 Rev. *B • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600 Revised July 6, 2006 CY7C1214H Selection Guide 133 MHz 100 MHz Unit Maximum Access Time 6.5 8.0 ns Maximum Operating Current 225 205 mA Maximum Standby Current 40 40 mA Pin Configurations Document #: 38-05671 Rev. *B A A 35 36 37 38 39 40 41 42 45 46 47 48 49 50 A1 A0 NC/72M NC/36M VSS VDD NC/18M NC/9M A A A A A NC/2M NC/4M 44 34 A 43 81 82 83 84 BWE OE ADSC ADSP ADV 85 86 GW 89 87 CLK 91 88 VDD VSS 93 90 BWA CE3 94 92 BWC BWB 95 CE2 BWD 96 98 97 A CE1 99 A 31 VSSQ VDDQ DQD DQD NC A VSS DQD DQD VDDQ VSSQ DQD DQD DQD DQD CY7C1214H 33 BYTE D DQC DQC VSSQ VDDQ DQC DQC NC VDD NC A BYTE C 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 32 VDDQ VSSQ DQC DQC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 MODE A NC DQC DQC 100 100-Pin TQFP NC DQB DQB VDDQ VSSQ DQB DQB DQB DQB VSSQ VDDQ DQB DQB VSS NC BYTE B VDD ZZ DQA DQA VDDQ VSSQ DQA DQA DQA DQA BYTE A VSSQ VDDQ DQA DQA NC Page 2 of 15 CY7C1214H Pin Descriptions Name I/O Description A0, A1, A InputSynchronous Address Inputs used to select one of the 32K address locations. Sampled at the rising edge of the CLK if ADSP or ADSC is active LOW, and CE1, CE2, and CE3 are sampled active. A[1:0] feed the 2-bit counter. BWA,BWB BWC,BWD InputSynchronous Byte Write Select Inputs, active LOW. Qualified with BWE to conduct Byte Writes to the SRAM. Sampled on the rising edge of CLK. GW InputSynchronous Global Write Enable Input, active LOW. When asserted LOW on the rising edge of CLK, a global write is conducted (ALL bytes are written, regardless of the values on BW[A:D] and BWE). BWE InputSynchronous Byte Write Enable Input, active LOW. Sampled on the rising edge of CLK. This signal must be asserted LOW to conduct a Byte Write. CLK Input-Clock Clock Input. Used to capture all synchronous inputs to the device. Also used to increment the burst counter when ADV is asserted LOW, during a burst operation. CE1 InputSynchronous Chip Enable 1 Input, active LOW. Sampled on the rising edge of CLK. Used in conjunction with CE2 and CE3 to select/deselect the device. ADSP is ignored if CE1 is HIGH. CE1 is sampled only when a new external address is loaded. CE2 InputSynchronous Chip Enable 2 Input, active HIGH. Sampled on the rising edge of CLK. Used in conjunction with CE1 and CE3 to select/deselect the device. CE2 is sampled only when a new external address is loaded. CE3 InputSynchronous Chip Enable 3 Input, active LOW. Sampled on the rising edge of CLK. Used in conjunction with CE1 and CE2 to select/deselect the device. CE3 is sampled only when a new external address is loaded. OE InputOutput Enable, asynchronous input, active LOW. Controls the direction of the I/O pins. When Asynchronous LOW, the I/O pins behave as outputs. When deasserted HIGH, I/O pins are tri-stated, and act as input data pins. OE is masked during the first clock of a Read cycle when emerging from a deselected state. ADV InputSynchronous Advance Input signal, sampled on the rising edge of CLK. When asserted, it automatically increments the address in a burst cycle. ADSP InputSynchronous Address Strobe from Processor, sampled on the rising edge of CLK, active LOW. When asserted LOW, addresses presented to the device are captured in the address registers. A[1:0] are also loaded into the burst counter. When ADSP and ADSC are both asserted, only ADSP is recognized. ASDP is ignored when CE1 is deasserted HIGH ADSC InputSynchronous Address Strobe from Controller, sampled on the rising edge of CLK, active LOW. When asserted LOW, addresses presented to the device are captured in the address registers. A[1:0] are also loaded into the burst counter. When ADSP and ADSC are both asserted, only ADSP is recognized. ZZ InputZZ “sleep” Input, active HIGH. When asserted HIGH places the device in a non-time-critical Asynchronous “sleep” condition with data integrity preserved. For normal operation, this pin has to be LOW or left floating. ZZ pin has an internal pull-down. DQs I/OSynchronous Bidirectional Data I/O lines. As inputs, they feed into an on-chip data register that is triggered by the rising edge of CLK. As outputs, they deliver the data contained in the memory location specified by the addresses presented during the previous clock rise of the read cycle. The direction of the pins is controlled by OE. When OE is asserted LOW, the pins behave as outputs. When HIGH, DQs are placed in a tri-state condition. VDD Power Supply Power supply inputs to the core of the device. VSS Ground Ground for the core of the device. VDDQ I/O Power Supply Power supply for the I/O circuitry. VSSQ I/O Ground Ground for the I/O circuitry. MODE InputStatic NC Document #: 38-05671 Rev. *B Selects Burst Order. When tied to GND selects linear burst sequence. When tied to VDD or left floating selects interleaved burst sequence. This is a strap pin and should remain static during device operation. Mode Pin has an internal pull-up. No Connects. Not Internally connected to the die. 2M, 4M, 9M, 18M, 72M, 144M, 288M, 576M and 1G are address expansion pins and are not internally connected to the die. Page 3 of 15 CY7C1214H Functional Overview All synchronous inputs pass through input registers controlled by the rising edge of the clock. Maximum access delay from the clock rise (t CDV) is 6.5 ns (133-MHz device). The CY7C1214H supports secondary cache in systems utilizing either a linear or interleaved burst sequence. The interleaved burst order supports Pentium and i486™ processors. The linear burst sequence is suited for processors that utilize a linear burst sequence. The burst order is user-selectable, and is determined by sampling the MODE input. Accesses can be initiated with either the Processor Address Strobe (ADSP) or the Controller Address Strobe (ADSC). Address advancement through the burst sequence is controlled by the ADV input. A two-bit on-chip wraparound burst counter captures the first address in a burst sequence and automatically increments the address for the rest of the burst access. Byte Write operations are qualified with the Byte Write Enable (BWE) and Byte Write Select (BW[A:D]) inputs. A Global Write Enable (GW) overrides all Byte Write inputs and writes data to all four bytes. All Writes are simplified with on-chip synchronous self-timed write circuitry. Three synchronous Chip Selects (CE1, CE2, CE3) and an asynchronous Output Enable (OE) provide for easy bank selection and output tri-state control. ADSP is ignored if CE1 is HIGH. Single Read Accesses A single read access is initiated when the following conditions are satisfied at clock rise: (1) CE1, CE2, and CE3 are all asserted active, and (2) ADSP or ADSC is asserted LOW (if the access is initiated by ADSC, the write inputs must be deasserted during this first cycle). The address presented to the address inputs is latched into the address register and the burst counter/control logic and presented to the memory core. If the OE input is asserted LOW, the requested data will be available at the data outputs a maximum to tCDV after clock rise. ADSP is ignored if CE1 is HIGH. Single Write Accesses Initiated by ADSP This access is initiated when the following conditions are satisfied at clock rise: (1) CE1, CE2, CE3 are all asserted active, and (2) ADSP is asserted LOW. The addresses presented are loaded into the address register and the burst inputs (GW, BWE, and BW[A:D]) are ignored during this first clock cycle. If the write inputs are asserted active (see Write Cycle Descriptions table for appropriate states that indicate a write) on the next clock rise, the appropriate data will be latched and written into the device. Byte Writes are allowed. During byte writes, BWA controls DQA, BWB controls DQB, BWC controls DQC, and BWD controls DQD. All I/Os are tri-stated during a Byte Write. Since this is a common I/O device, the asynchronous OE input signal must be deasserted and the I/Os must be tri-stated prior to the presentation of data to DQs. As a safety precaution, the data lines are tri-stated once a Write cycle is detected, regardless of the state of OE. Single Write Accesses Initiated by ADSC This write access is initiated when the following conditions are satisfied at clock rise: (1) CE1, CE2, and CE3 are all asserted active, (2) ADSC is asserted LOW, (3) ADSP is deasserted Document #: 38-05671 Rev. *B HIGH, and (4) the Write input signals (GW, BWE, and BW[A:D]) indicate a write access. ADSC is ignored if ADSP is active LOW. The addresses presented are loaded into the address register and the burst counter/control logic and delivered to the memory core. The information presented to DQs will be written into the specified address location. Byte Writes are allowed. During Byte Writes, BWA controls DQA, BWB controls DQB, BWC controls DQC, and BWD controls DQD. All I/Os are tri-stated when a write is detected, even a byte write. Since this is a common I/O device, the asynchronous OE input signal must be deasserted and the I/Os must be tri-stated prior to the presentation of data to DQs. As a safety precaution, the data lines are tri-stated once a write cycle is detected, regardless of the state of OE. Burst Sequences The CY7C1214H provides an on-chip two-bit wraparound burst counter inside the SRAM. The burst counter is fed by A[1:0], and can follow either a linear or interleaved burst order. The burst order is determined by the state of the MODE input. A LOW on MODE will select a linear burst sequence. A HIGH on MODE will select an interleaved burst order. Leaving MODE unconnected will cause the device to default to a interleaved burst sequence. Sleep Mode The ZZ input pin is an asynchronous input. Asserting ZZ places the SRAM in a power conservation “sleep” mode. Two clock cycles are required to enter into or exit from this “sleep” mode. While in this mode, data integrity is guaranteed. Accesses pending when entering the “sleep” mode are not considered valid nor is the completion of the operation guaranteed. The device must be deselected prior to entering the “sleep” mode. CEs, ADSP, and ADSC must remain inactive for the duration of tZZREC after the ZZ input returns LOW. Interleaved Burst Address Table (MODE = Floating or VDD) First Address A1, A0 Second Address A1, A0 Third Address A1, A0 Fourth Address A1, A0 00 01 10 11 01 00 11 10 10 11 00 01 11 10 01 00 Linear Burst Address Table (MODE = GND) First Address A1, A0 Second Address A1, A0 Third Address A1, A0 Fourth Address A1, A0 00 01 10 11 01 10 11 00 10 11 00 01 11 00 01 10 Page 4 of 15 CY7C1214H ZZ Mode Electrical Characteristics Parameter Description Test Conditions IDDZZ Sleep mode standby current ZZ > VDD – 0.2V tZZS Device operation to ZZ ZZ > VDD – 0.2V tZZREC ZZ Recovery time ZZ < 0.2V tZZI ZZ Active to sleep current This parameter is sampled tRZZI ZZ Inactive to exit sleep current This parameter is sampled Min. Max. Unit 40 mA 2tCYC ns 2tCYC ns 2tCYC ns 0 ns Truth Table [2, 3, 4, 5, 6] Cycle Description Address Used CE1 CE2 CE3 ZZ ADSP ADSC ADV WRITE OE CLK DQ Deselected Cycle, Power-down None H X X L X L X X X L-H Tri-State Deselected Cycle, Power-down None L L X L L X X X X L-H Tri-State Deselected Cycle, Power-down None L X H L L X X X X L-H Tri-State Deselected Cycle, Power-down None L L X L H L X X X L-H Tri-State Deselected Cycle, Power-down None X X X L H L X X X L-H Tri-State Sleep Mode, Power-down None X X X H X X X X X X Tri-State Read Cycle, Begin Burst External L H L L L X X X L L-H Q Read Cycle, Begin Burst External L H L L L X X X H L-H Tri-State Write Cycle, Begin Burst External L H L L H L X L X L-H D Read Cycle, Begin Burst External L H L L H L X H L L-H Q Read Cycle, Begin Burst External L H L L H L X H H L-H Tri-State Next X X X L H H L H L L-H Q Read Cycle, Continue Burst Read Cycle, Continue Burst Next X X X L H H L H H L-H Tri-State Read Cycle, Continue Burst Next H X X L X H L H L L-H Q Read Cycle, Continue Burst Next H X X L X H L H H L-H Tri-State Write Cycle, Continue Burst Next X X X L H H L L X L-H D Write Cycle, Continue Burst Next H X X L X H L L X L-H D Read Cycle, Suspend Burst Current X X X L H H H H L L-H Q Read Cycle, Suspend Burst Current X X X L H H H H H L-H Tri-State Read Cycle, Suspend Burst Current H X X L X H H H L L-H Q Read Cycle, Suspend Burst Current H X X L X H H H H L-H Tri-State Write Cycle, Suspend Burst Current X X X L H H H L X L-H D Write Cycle, Suspend Burst Current H X X L X H H L X L-H D Notes: 2. X = “Don't Care.” H = Logic HIGH, L = Logic LOW. 3. WRITE = L when any one or more Byte Write enable signals (BWA, BWB, BWC, BWD) and BWE = L or GW= L. WRITE = H when all Byte Write enable signals (BWA, BWB, BWC, BWD), BWE, GW = H. 4. The DQ pins are controlled by the current cycle and the OE signal. OE is asynchronous and is not sampled with the clock. 5. The SRAM always initiates a read cycle when ADSP is asserted, regardless of the state of GW, BWE, or BW[A: D]. Writes may occur only on subsequent clocks after the ADSP or with the assertion of ADSC. As a result, OE must be driven HIGH prior to the start of the write cycle to allow the outputs to tri-state. OE is a don't care for the remainder of the Write cycle. 6. OE is asynchronous and is not sampled with the clock rise. It is masked internally during write cycles. During a Read cycle all data bits are tri-state when OE is inactive or when the device is deselected, and all data bits behave as output when OE is active (LOW). Document #: 38-05671 Rev. *B Page 5 of 15 CY7C1214H Truth Table for Read/Write[2, 3] Function GW BWE BWD BWC BWB BWA Read H H X X X X Read H L H H H H Write Byte (A, DQA) H L H H H L Write Byte (B, DQB) H L H H L H Write Byte (C, DQC) H L H L H H Write Byte (D, DQD) H L L H H H Write All Bytes H L L L L L Write All Bytes L X X X X X Document #: 38-05671 Rev. *B Page 6 of 15 CY7C1214H Maximum Ratings DC Input Voltage ................................... –0.5V to VDD + 0.5V (Above which the useful life may be impaired. For user guidelines, not tested.) Storage Temperature ................................ –65°C to + 150°C Ambient Temperature with Power Applied............................................ –55°C to + 125°C Current into Outputs (LOW)......................................... 20 mA Static Discharge Voltage........................................... >2001V (per MIL-STD-883, Method 3015) Latch-up Current..................................................... >200 mA Operating Range Supply Voltage on VDD Relative to GND....... –0.5V to + 4.6V Supply Voltage on VDDQ Relative to GND ..... –0.5V to + VDD Range DC Voltage Applied to Outputs in Tri-State........................................... –0.5V to VDDQ + 0.5V Commercial Industrial Ambient Temperature 0°C to +70°C –40°C to +85°C VDD VDDQ 3.3V −5%/+10% 2.5V –5% to VDD Electrical Characteristics Over the Operating Range [7, 8] Parameter Description Test Conditions Min. Max. Unit 3.135 3.6 V for 3.3V I/O 3.135 VDD V for 2.5V I/O 2.375 2.625 V VDD Power Supply Voltage VDDQ I/O Supply Voltage VOH Output HIGH Voltage VOL Output LOW Voltage VIH Input HIGH Voltage[7] VIL Input LOW Voltage[7] IX Input Leakage Current except ZZ and MODE GND ≤ VI ≤ VDDQ Input Current of MODE Input = VSS –30 Input Current of ZZ Input = VSS for 3.3V I/O, IOH = –4.0 mA 2.4 for 2.5V I/O, IOH = –1.0 mA 2.0 for 3.3V I/O, IOL = 8.0 mA for 2.5V I/O, IOL = 1.0 mA V 0.4 V 0.4 V 2.0 VDD + 0.3V V for 2.5V I/O 1.7 VDD + 0.3V V for 3.3V I/O –0.3 0.8 V for 2.5V I/O –0.3 0.7 V –5 5 µA for 3.3V I/O Input = VDD µA 5 Input = VDD Output Leakage Current GND ≤ VI ≤ VDDQ, Output Disabled IDD VDD Operating Supply Current VDD = Max., IOUT = 0 mA, f = fMAX= 1/tCYC Automatic CE Power-Down Current—TTL Inputs –5 µA µA –5 IOZ ISB1 V 30 µA 5 µA 7.5-ns cycle, 133 MHz 225 mA 10-ns cycle, 100 MHz 205 mA Max. VDD, Device Deselected, 7.5-ns cycle, 133 MHz VIN ≥ VIH or VIN ≤ VIL, f = fMAX, 10-ns cycle, 100 MHz inputs switching 90 mA 80 mA ISB2 Automatic CE Max. VDD, Device Deselected, All speeds Power-Down VIN ≥ VDD – 0.3V or VIN ≤ 0.3V, Current—CMOS Inputs f = 0, inputs static 40 mA ISB3 Max. VDD, Device Deselected, 7.5-ns cycle, 133 MHz Automatic CE Power-Down VIN ≥ VDDQ – 0.3V or VIN ≤ 0.3V, 10-ns cycle, 100 MHz Current—CMOS Inputs f = fMAX, inputs switching 75 mA 65 mA Automatic CE Power-Down Current—TTL Inputs 45 mA ISB4 Max. VDD, Device Deselected, All speeds VIN ≥ VDD – 0.3V or VIN ≤ 0.3V, f = 0, inputs static Notes: 7. Overshoot: VIH(AC) < VDDQ +1.5V (Pulse width less than tCYC/2), undershoot: VIL(AC) > –2V (Pulse width less than tCYC/2). 8. TPower-up: Assumes a linear ramp from 0V to VDD(min.) within 200 ms. During this time VIH < VDD and VDDQ < VDD. Document #: 38-05671 Rev. *B Page 7 of 15 CY7C1214H Capacitance[9] Parameter Description 100 TQFP Max. Test Conditions CIN Input Capacitance CCLK Clock Input Capacitance CI/O Input/Output Capacitance TA = 25°C, f = 1 MHz, VDD = 3.3V. VDDQ = 2.5V Unit 5 pF 5 pF 5 pF 100 TQFP Package Unit 30.32 °C/W 6.85 °C/W Thermal Resistance[9] Parameter Description ΘJA Thermal Resistance (Junction to Ambient) ΘJC Thermal Resistance (Junction to Case) Test Conditions Test conditions follow standard test methods and procedures for measuring thermal impedance, per EIA/JESD51 AC Test Loads and Waveforms 3.3V I/O Test Load R = 317Ω 3.3V OUTPUT Z0 = 50Ω 10% INCLUDING JIG AND SCOPE 2.5V I/O Test Load R = 351Ω (b) (c) 10% (a) 90% 10% 90% GND 5 pF VT = 1.25V ALL INPUT PULSES VDDQ OUTPUT RL = 50Ω Z0 = 50Ω ≤ 1 ns ≤ 1 ns R = 1667Ω 2.5V OUTPUT 90% 10% 90% GND 5 pF VT = 1.5V (a) ALL INPUT PULSES VDDQ OUTPUT RL = 50Ω R =1538Ω INCLUDING JIG AND SCOPE (b) 1 ns ≤ ≤ 1 ns (c) Note: 9. Tested initially and after any design or process change that may affect these parameters. Document #: 38-05671 Rev. *B Page 8 of 15 CY7C1214H Switching Characteristics Over the Operating Range [10, 11] 133 MHz Parameter tPOWER Description VDD(Typical) to the First Access [12] Min. Max. 100 MHz Min. Max. Unit 1 1 ms Clock tCYC Clock Cycle Time 7.5 10 ns tCH Clock HIGH 2.5 4.0 ns tCL Clock LOW 2.5 4.0 ns Output Times tCDV Data Output Valid after CLK Rise tDOH Data Output Hold after CLK Rise [13, 14, 15] 6.5 2.0 8.0 2.0 ns tCLZ Clock to Low-Z tCHZ Clock to High-Z[13, 14, 15] 3.5 3.5 ns tOEV OE LOW to Output Valid 3.5 3.5 ns tOELZ tOEHZ OE LOW to Output Low-Z[13, 14, 15] OE HIGH to Output High-Z[13, 14, 15] 0 ns 0 0 ns 0 3.5 ns 3.5 ns Set-up Times tAS Address Set-up before CLK Rise 1.5 2.0 ns tADS ADSP, ADSC Set-up before CLK Rise 1.5 2.0 ns tADVS ADV Set-up before CLK Rise 1.5 2.0 ns tWES GW, BWE, BW[A:D] Set-up before CLK Rise 1.5 2.0 ns tDS Data Input Set-up before CLK Rise 1.5 2.0 ns tCES Chip Enable Set-up 1.5 2.0 ns tAH Address Hold after CLK Rise 0.5 0.5 ns tADH ADSP, ADSC Hold after CLK Rise 0.5 0.5 ns tWEH GW, BWE, BW[A:D] Hold after CLK Rise 0.5 0.5 ns tADVH ADV Hold after CLK Rise 0.5 0.5 ns tDH Data Input Hold after CLK Rise 0.5 0.5 ns tCEH Chip Enable Hold after CLK Rise 0.5 0.5 ns Hold Times Notes: 10. Timing reference level is 1.5V when VDDQ = 3.3V and is 1.25V when VDDQ = 2.5V. 11. Test conditions shown in (a) of AC Test Loads unless otherwise noted. 12. This part has a voltage regulator internally; tPOWER is the time that the power needs to be supplied above VDD(minimum) initially before a Read or Write operation can be initiated. 13. tCHZ, tCLZ,tOELZ, and tOEHZ are specified with AC test conditions shown in part (b) of AC Test Loads. Transition is measured ± 200 mV from steady-state voltage. 14. At any given voltage and temperature, tOEHZ is less than tOELZ and tCHZ is less than tCLZ to eliminate bus contention between SRAMs when sharing the same data bus. These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed to achieve High-Z prior to Low-Z under the same system conditions. 15. This parameter is sampled and not 100% tested. Document #: 38-05671 Rev. *B Page 9 of 15 CY7C1214H Timing Diagrams Read Cycle Timing[16] tCYC CLK t tADS CH t CL tADH ADSP tADS tADH ADSC tAS tAH A1 ADDRESS A2 t WES t WEH GW, BWE,BW [A:D] tCES Deselect Cycle t CEH CE t ADVS t ADVH ADV ADV suspends burst. OE t OEV t OEHZ t CLZ Data Out (Q) High-Z Q(A1) t OELZ tCDV t CHZ tDOH Q(A2) Q(A2 + 1) Q(A2 + 2) Q(A2 + 3) Q(A2) Q(A2 + 1) Q(A2 + 2) t CDV Single READ BURST READ DON’T CARE Burst wraps around to its initial state UNDEFINED Note: 16. On this diagram, when CE is LOW, CE1 is LOW, CE2 is HIGH and CE3 is LOW. When CE is HIGH, CE1 is HIGH or CE2 is LOW or CE3 is HIGH. Document #: 38-05671 Rev. *B Page 10 of 15 CY7C1214H Timing Diagrams (continued) Write Cycle Timing[16, 17] t CYC CLK t tADS t CH CL tADH ADSP tADS ADSC extends burst. tADH tADS tADH ADSC tAS tAH A1 ADDRESS A2 A3 Byte write signals are ignored for first cycle when ADSP initiates burst. tWES tWEH BWE, BW[A:D] t t WES WEH GW tCES tCEH CE tADVS tADVH ADV ADV suspends burst. OE t Data in (D) High-Z t OEHZ t DS DH D(A1) D(A2) D(A2 + 1) D(A2 + 1) D(A2 + 2) D(A2 + 3) D(A3) D(A3 + 1) D(A3 + 2) Data Out (Q) BURST READ Single WRITE BURST WRITE DON’T CARE Extended BURST WRITE UNDEFINED Note: 17. Full width write can be initiated by either GW LOW; or by GW HIGH, BWE LOW and BW[A:D] LOW. Document #: 38-05671 Rev. *B Page 11 of 15 CY7C1214H Timing Diagrams (continued) Read/Write Timing[16, 18, 19] tCYC CLK t CH tADS tADH tAS tAH t CL ADSP ADSC ADDRESS A1 A2 A3 A4 A5 A6 D(A5) D(A6) t t WES WEH BWE, BW[A:D] tCES tCEH CE ADV OE tDS Data In (D) Data Out (Q) High-Z t OEHZ Q(A1) tDH tOELZ D(A3) tCDV Q(A2) Back-to-Back READs Q(A4) Single WRITE Q(A4+1) Q(A4+2) BURST READ DON’T CARE Q(A4+3) Back-to-Back WRITEs UNDEFINED Notes: 18. The data bus (Q) remains in High-Z following a Write cycle unless an ADSP, ADSC, or ADV cycle is performed. 19. GW is HIGH. Document #: 38-05671 Rev. *B Page 12 of 15 CY7C1214H Timing Diagrams (continued) ZZ Mode Timing [20, 21] CLK t ZZ ZZ I t ZZREC t ZZI SUPPLY I DDZZ t RZZI ALL INPUTS (except ZZ) Outputs (Q) DESELECT or READ Only High-Z DON’T CARE Notes: 20. Device must be deselected when entering ZZ mode. See Cycle Descriptions table for all possible signal conditions to deselect the device. 21. DQs are in High-Z when exiting ZZ sleep mode. Document #: 38-05671 Rev. *B Page 13 of 15 CY7C1214H Ordering Information Not all of the speed, package and temperature ranges are available. Please contact your local sales representative or visit www.cypress.com for actual products offered. Speed (MHz) 100 Package Diagram Ordering Code CY7C1214H-100AXC Operating Range Package Type 51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free Commercial CY7C1214H-100AXI 133 Industrial CY7C1214H-133AXC 51-85050 100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free Commercial CY7C1214H-133AXI Industrial Package Diagram 100-Pin TQFP (14 x 20 x 1.4 mm) (51-85050) 16.00±0.20 1.40±0.05 14.00±0.10 81 100 80 1 20.00±0.10 22.00±0.20 0.30±0.08 0.65 TYP. 30 12°±1° (8X) SEE DETAIL A 51 31 50 0.20 MAX. 0.10 1.60 MAX. R 0.08 MIN. 0.20 MAX. 0° MIN. SEATING PLANE STAND-OFF 0.05 MIN. 0.15 MAX. 0.25 NOTE: 1. JEDEC STD REF MS-026 GAUGE PLANE 0°-7° R 0.08 MIN. 0.20 MAX. 2. BODY LENGTH DIMENSION DOES NOT INCLUDE MOLD PROTRUSION/END FLASH MOLD PROTRUSION/END FLASH SHALL NOT EXCEED 0.0098 in (0.25 mm) PER SIDE BODY LENGTH DIMENSIONS ARE MAX PLASTIC BODY SIZE INCLUDING MOLD MISMATCH 3. DIMENSIONS IN MILLIMETERS 0.60±0.15 0.20 MIN. 51-85050-*B 1.00 REF. DETAIL A Intel and Pentium are registered trademarks and i486 is a trademark of Intel Corporation. All product and company names mentioned in this document may be the trademarks of their respective holders Document #: 38-05671 Rev. *B Page 14 of 15 © Cypress Semiconductor Corporation, 2006. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. CY7C1214H Document History Page Document Title: CY7C1214H 1-Mbit (32K x 32) Flow-Through Sync SRAM Document Number: 38-05671 REV. ECN NO. Issue Date Orig. of Change Description of Change ** 345879 See ECN PCI New Data Sheet *A 430677 See ECN NXR Changed address of Cypress Semiconductor Corporation on Page# 1 from “3901 North First Street” to “198 Champion Court” Added 2.5VI/O option Changed Three-State to Tri-State Included Maximum Ratings for VDDQ relative to GND Modified “Input Load” to “Input Leakage Current except ZZ and MODE” in the Electrical Characteristics Table Modified test condition from VIH < VDD to VIH < VDD Replaced Package Name column with Package Diagram in the Ordering Information table *B 482139 See ECN VKN Converted from Preliminary to Final. Updated the Ordering Information table. Document #: 38-05671 Rev. *B Page 15 of 15