CYPRESS CY7C1312BV18

CY7C1310BV18
CY7C1910BV18
CY7C1312BV18
CY7C1314BV18
18-Mbit QDR™-II SRAM 2 Word
Burst Architecture
Features
Functional Description
Separate Independent read and write data ports
❐ Supports concurrent transactions
■ 250 MHz clock for high bandwidth
■ 2 Word Burst on all accesses
■ Double Data Rate (DDR) interfaces on both read and write ports
(data transferred at 500 MHz) @ 250 MHz
■ Two input clocks (K and K) for precise DDR timing
❐ SRAM uses rising edges only
The CY7C1310BV18, CY7C1910BV18, CY7C1312BV18, and
CY7C1314BV18 are 1.8V Synchronous Pipelined SRAMs,
equipped with QDR™-II architecture. QDR-II architecture
consists of two separate ports to access the memory array. The
read port has dedicated Data Outputs to support read operations
and the Write Port has dedicated Data Inputs to support write
operations. QDR-II architecture has separate data inputs and
data outputs to completely eliminate the need to “turn-around”
the data bus required with common IO devices. Access to each
port is accomplished through a common address bus. The read
address is latched on the rising edge of the K clock and the write
address is latched on the rising edge of the K clock. Accesses to
the QDR-II read and write ports are completely independent of
one another. To maximize data throughput, both read and write
ports are equipped with Double Data Rate (DDR) interfaces.
Each address location is associated with two 8-bit words
(CY7C1310BV18), 9-bit words (CY7C1910BV18), 18-bit words
(CY7C1312BV18), or 36-bit words (CY7C1314BV18) that burst
sequentially into or out of the device. Since data is transferred
into and out of the device on every rising edge of both input
clocks (K and K and C and C), maximize the memory bandwidth
while simplifying system design by eliminating bus
“turn-arounds.”
■
■
Two input clocks for output data (C and C) to minimize clock
skew and flight time mismatches
■
Echo clocks (CQ and CQ) simplify data capture in high speed
systems
■
Single multiplexed address input bus latches address inputs
for both read and write ports
■
Separate Port Selects for depth expansion
■
Synchronous internally self-timed writes
■
Available in x 8, x 9, x 18, and x 36 configurations
■
Full data coherency, providing most current data
■
Depth expansion is accomplished with Port Selects for each port.
Port selects enable each port to operate independently.
■
Variable drive HSTL output buffers
■
JTAG 1149.1 compatible test access port
All synchronous inputs pass through input registers controlled by
the K or K input clocks. All data outputs pass through output
registers controlled by the C or C (or K or K in a single clock
domain) input clocks. Writes are conducted with on-chip
synchronous self-timed write circuitry.
■
Delay Lock Loop (DLL) for accurate data placement
Core VDD = 1.8V (±0.1V); I/O VDDQ = 1.4V to VDD
■ Available in 165 ball FBGA package (13 x 15 x 1.4 mm)
■ Offered in both Pb-free and non-Pb-free packages
Configurations
CY7C1310BV18 – 2M x 8
CY7C1910BV18 – 2M x 9
CY7C1312BV18 – 1M x 18
CY7C1314BV18 – 512K x 36
Selection Guide
250 MHz
200 MHz
167 MHz
Unit
Maximum Operating Frequency
250
200
167
MHz
Maximum Operating Current
600
550
500
mA
Cypress Semiconductor Corporation
Document #: 38-05619 Rev. *E
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised July 15, 2007
CY7C1310BV18
CY7C1910BV18
CY7C1312BV18
CY7C1314BV18
Logic Block Diagram (CY7C1310BV18)
K
K
CLK
Gen.
DOFF
1M x 8 Array
Address
Register
Write
Reg
20
Address
Register
Read Add. Decode
20
Write
Reg
1M x 8 Array
A(19:0)
8
Write Add. Decode
D[7:0]
A(19:0)
RPS
Control
Logic
C
C
Read Data Reg.
CQ
16
VREF
WPS
NWS[1:0]
8
Control
Logic
Reg.
8
Reg.
8
CQ
8
Reg.
8
Q[7:0]
QVLD
Logic Block Diagram (CY7C1910BV18)
K
K
CLK
Gen.
DOFF
1M x 9 Array
Address
Register
Write
Reg
20
Address
Register
Read Add. Decode
20
Write
Reg
1M x 9 Array
A(19:0)
9
Write Add. Decode
D[8:0]
A(19:0)
RPS
Control
Logic
C
C
Read Data Reg.
CQ
18
VREF
WPS
BWS[0]
9
Control
Logic
9
Reg.
Reg.
Reg.
9
CQ
9
9
Q[8:0]
QVLD
Document #: 38-05619 Rev. *E
Page 2 of 28
CY7C1310BV18
CY7C1910BV18
CY7C1312BV18
CY7C1314BV18
Logic Block Diagram (CY7C1312BV18)
K
K
CLK
Gen.
DOFF
19
Address
Register
Read Add. Decode
Address
Register
Write
Reg
512K x 18 Array
19
Write
Reg
512K x 18 Array
A(18:0)
18
Write Add. Decode
D[17:0]
A(18:0)
RPS
Control
Logic
C
C
Read Data Reg.
CQ
36
VREF
WPS
BWS[1:0]
18
Control
Logic
Reg.
18
Reg.
18
CQ
18
Reg.
18
Q[17:0]
QVLD
Logic Block Diagram (CY7C1314BV18)
K
K
CLK
Gen.
DOFF
18
Address
Register
Read Add. Decode
Address
Register
Write
Reg
256K x 36 Array
18
Write
Reg
256K x 36 Array
A(17:0)
36
Write Add. Decode
D[35:0]
A(17:0)
RPS
Control
Logic
C
C
Read Data Reg.
CQ
72
VREF
WPS
BWS[3:0]
36
Control
Logic
36
Reg.
Reg.
Reg.
36
CQ
36
36
Q[35:0]
QVLD
Document #: 38-05619 Rev. *E
Page 3 of 28
CY7C1310BV18
CY7C1910BV18
CY7C1312BV18
CY7C1314BV18
Pin Configurations
165-Ball FBGA (13 x 15 x 1.4 mm) Pinout
CY7C1310BV18 (2M x 8)
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
1
2
3
4
5
6
7
8
9
10
11
CQ
NC/72M
NC
A
NC
WPS
A
NWS1
NC/288M
K
NC
A
NC
NC/36M
NC
CQ
Q3
NC
D4
NC
NC
VSS
VSS
A
VSS
VSS
NC
VSS
K
A
VSS
RPS
A
NC
NC
NC/144M
NWS0
A
VSS
NC
NC
NC
D3
NC
NC
NC
Q4
VDDQ
VSS
VSS
VSS
VDDQ
NC
D2
Q2
NC
NC
NC
NC
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
NC
DOFF
NC
D5
VREF
NC
Q5
VDDQ
NC
VDDQ
VDDQ
VDDQ
VDD
VDD
VDD
VSS
VSS
VSS
VDD
VDD
VDD
VDDQ
VDDQ
VDDQ
NC
VDDQ
NC
NC
VREF
Q1
NC
ZQ
D1
NC
NC
NC
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
NC
NC
Q6
D6
VDDQ
VSS
VSS
VSS
VDDQ
NC
NC
Q0
NC
NC
NC
D7
NC
NC
VSS
VSS
VSS
A
VSS
A
VSS
A
VSS
VSS
NC
NC
NC
NC
D0
NC
NC
NC
Q7
A
A
C
A
A
NC
NC
NC
TDO
TCK
A
A
A
C
A
A
A
TMS
TDI
CY7C1910BV18 (2M x 9)
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
1
2
3
4
5
6
7
8
9
10
11
CQ
NC/72M
A
WPS
NC
K
NC/144M
RPS
A
NC/36M
CQ
NC
NC
NC
A
NC/288M
K
BWS0
A
NC
NC
Q4
NC
NC
NC
D5
NC
VSS
VSS
A
A
VSS
VSS
VSS
NC
VSS
A
VSS
NC
NC
D4
NC
NC
NC
NC
NC
Q5
VDDQ
VSS
VSS
VSS
VDDQ
NC
D3
Q3
NC
NC
NC
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
NC
NC
DOFF
NC
D6
VREF
NC
Q6
VDDQ
NC
VDDQ
VDDQ
VDDQ
VDD
VDD
VDD
VSS
VSS
VSS
VDD
VDD
VDD
VDDQ
VDDQ
VDDQ
NC
VDDQ
NC
NC
VREF
Q2
NC
ZQ
D2
NC
NC
NC
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
NC
NC
Q7
D7
VDDQ
VSS
VSS
VSS
VDDQ
NC
NC
Q1
NC
NC
NC
D8
NC
NC
VSS
VSS
VSS
A
VSS
A
VSS
A
VSS
VSS
NC
NC
NC
NC
D1
NC
NC
NC
Q8
A
A
C
A
A
NC
D0
Q0
TDO
TCK
A
A
A
C
A
A
A
TMS
TDI
Document #: 38-05619 Rev. *E
Page 4 of 28
CY7C1310BV18
CY7C1910BV18
CY7C1312BV18
CY7C1314BV18
Pin Configurations
(continued)
165-Ball FBGA (13 x 15 x 1.4 mm) Pinout
CY7C1312BV18 (1M x 18)
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
CQ
2
3
NC/144M NC/36M
4
5
6
7
8
9
10
11
WPS
BWS1
K
NC/288M
A
NC
NC/72M
CQ
NC
Q8
Q7
NC
D8
D7
NC
Q9
D9
A
NC
K
BWS0
RPS
A
NC
NC
NC
D11
D10
Q10
VSS
VSS
A
A
VSS
A
VSS
VSS
VSS
NC
VSS
NC
NC
NC
Q11
VDDQ
VSS
VSS
VSS
VDDQ
NC
D6
Q6
NC
Q12
D12
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
Q5
NC
DOFF
NC
D13
VREF
NC
Q13
VDDQ
D14
VDDQ
VDDQ
VDDQ
VDD
VDD
VDD
VSS
VSS
VSS
VDD
VDD
VDD
VDDQ
VDDQ
VDDQ
NC
VDDQ
NC
NC
VREF
Q4
D5
ZQ
D4
NC
NC
Q14
VDDQ
VDD
VSS
VDD
VDDQ
NC
D3
Q3
NC
Q15
D15
VDDQ
VSS
VSS
VSS
VDDQ
NC
NC
Q2
NC
NC
NC
D17
D16
Q16
VSS
VSS
VSS
A
VSS
A
VSS
A
VSS
VSS
NC
NC
Q1
NC
D2
D1
NC
NC
Q17
A
A
C
A
A
NC
D0
Q0
TDO
TCK
A
A
A
C
A
A
A
TMS
TDI
9
10
CY7C1314BV18 (512K x 36)
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
CQ
Q27
D27
D28
2
3
NC/288M NC/72M
4
5
6
7
8
WPS
BWS2
K
BWS1
BWS3
A
VSS
K
A
VSS
BWS0
RPS
A
A
VSS
VSS
VSS
D16
Q16
Q18
D18
A
Q28
D20
D19
Q19
VSS
VSS
NC/36M NC/144M
D17
Q17
Q7
D15
11
CQ
Q8
D8
D7
Q29
D29
Q20
VDDQ
VSS
VSS
VSS
VDDQ
Q15
D6
Q6
Q30
Q21
D21
VDDQ
VDD
VSS
VDDQ
DOFF
D31
D22
VREF
Q31
Q22
VDDQ
D23
VDDQ
VDDQ
VDDQ
VDD
VDD
VDD
VSS
VSS
VSS
VDDQ
VDDQ
VDDQ
D14
Q13
VDDQ
D12
Q14
D30
VDD
VDD
VDD
VDD
D13
VREF
Q4
Q5
D5
ZQ
D4
Q32
D32
Q23
VDDQ
VDD
VSS
VDD
VDDQ
Q12
D3
Q3
Q33
Q24
D24
VDDQ
VSS
VSS
VSS
VDDQ
D11
Q11
Q2
D33
D34
Q34
D26
D25
Q25
VSS
VSS
VSS
A
VSS
A
VSS
A
VSS
VSS
D10
Q10
Q1
D9
D2
D1
Q35
D35
Q26
A
A
C
A
A
Q9
D0
Q0
TDO
TCK
A
A
A
C
A
A
A
TMS
TDI
Document #: 38-05619 Rev. *E
Page 5 of 28
CY7C1310BV18
CY7C1910BV18
CY7C1312BV18
CY7C1314BV18
Pin Definitions
Pin Name
IO
Pin Description
D[x:0]
InputData Input Signals, sampled on the rising edge of K and K clocks during valid write operations.
Synchronous CY7C1310BV18 - D[7:0]
CY7C1910BV18 - D[8:0]
CY7C1312BV18 - D[17:0]
CY7C1314BV18 - D[35:0]
WPS
InputWrite Port Select, Active LOW. Sampled on the rising edge of the K clock. When asserted active,
Synchronous a write operation is initiated. Deasserting deselects the write port. Deselecting the write port ignores
D[x:0].
Nibble Write Select 0, 1 − Active LOW. (CY7C1310BV18 Only) Sampled on the rising edge of the
K and K clocks during write operations. Used to select which nibble is written into the device during
the current portion of the write operations. Nibbles that are not written remain unaltered. NWS0
controls D[3:0] and NWS1 controls D[7:4]. All Nibble Write Selects are sampled on the same edge as
the data. Deselecting a Nibble Write Select ignores the corresponding nibble of data and is not written
into the device.
NWS0,NWS1
BWS0, BWS1,
BWS2, BWS3
InputByte Write Select 0, 1, 2 and 3 − Active LOW. Sampled on the rising edge of the K and K clocks
Synchronous during write operations. Used to select the byte that is written into the device during the current portion
of the write operations. Bytes that are not written remain unaltered.
CY7C1910BV18 − BWS0 controls D[8:0]
CY7C1312BV18 − BWS0 controls D[8:0], BWS1 controls D[17:9].
CY7C1314BV18 − BWS0 controls D[8:0], BWS1 controls D[17:9],BWS2 controls D[26:18] and BWS3
controls D[35:27].
All the Byte Write Selects are sampled on the same edge as the data. Deselecting a Byte Write Select
ignores the corresponding byte of data and is not written into the device.
A
InputAddress Inputs. Sampled on the rising edge of the K (read address) and K (write address) clocks
Synchronous during active read and write operations. These address inputs are multiplexed for both read and write
operations. Internally, the device is organized as 2M x 8 (2 arrays each of 1M x 8) for CY7C1310BV18,
2M x 9 (2 arrays each of 1M x 9) for CY7C1910BV18, 1M x 18 (2 arrays each of 512K x 18) for
CY7C1312BV18, and 512K x 36 (2 arrays each of 256K x 36) for CY7C1314BV18. Therefore, only
20 address inputs are needed to access the entire memory array of CY7C1310BV18 and
CY7C1910BV18, 19 address inputs for CY7C1312BV18, and 18 address inputs for CY7C1314BV18.
These inputs are ignored when the appropriate port is deselected.
Q[x:0]
OutputsData Output signals. These pins drive out the requested data during a read operation. Valid data is
Synchronous driven out on the rising edge of both the C and C clocks during read operations or K and K when in
single clock mode. When the read port is deselected, Q[x:0] are automatically tri-stated.
CY7C1310BV18 − Q[7:0]
CY7C1910BV18 − Q[8:0]
CY7C1312BV18 − Q[17:0]
CY7C1314BV18 − Q[35:0]
RPS
InputRead Port Select, Active LOW. Sampled on the rising edge of Positive Input Clock (K). When active,
Synchronous a read operation is initiated. Deasserting deselects the read port. When deselected, the pending
access is allowed to complete and the output drivers are automatically tri-stated following the next
rising edge of the C clock. Each read access consists of a burst of two sequential transfers.
C
Input-Clock
Positive Input Clock for Output Data. C is used in conjunction with C to clock out the read data
from the device. C and C are used together to deskew the flight times of various devices on the board
back to the controller. For more information see “Application Example” on page 9.
C
Input-Clock
Negative Input Clock for Output Data. C is used in conjunction with C to clock out the read data
from the device. C and C are used together to deskew the flight times of various devices on the board
back to the controller. For more information see “Application Example” on page 9.
K
Input-Clock
Positive Input Clock Input. The rising edge of K captures synchronous inputs to the device and
drives out data through Q[x:0] when in single clock mode. All accesses are initiated on the rising edge
of K.
Document #: 38-05619 Rev. *E
Page 6 of 28
CY7C1310BV18
CY7C1910BV18
CY7C1312BV18
CY7C1314BV18
Pin Definitions
Pin Name
(continued)
IO
Pin Description
K
Input-Clock
Negative Input Clock Input. K captures synchronous inputs presented to the device and drives out
data through Q[x:0] when in single clock mode.
CQ
Echo Clock
CQ is referenced with respect to C. This is a free running clock and is synchronized to the input
clock for output data (C) of the QDR-II. In the single clock mode, CQ is generated with respect to K.
The timings for the echo clocks are shown in the “Switching Characteristics” on page 22.
CQ
Echo Clock
CQ is referenced with respect to C. This is a free running clock and is synchronized to the input
clock for output data (C) of the QDR-II. In the single clock mode, CQ is generated with respect to K.
The timings for the echo clocks are shown in the “Switching Characteristics” on page 22.
ZQ
Input
Output Impedance Matching Input. This input tunes the device outputs to the system data bus
impedance. CQ, CQ, and Q[x:0] output impedance are set to 0.2 x RQ, where RQ is a resistor
connected between ZQ and ground. Alternately, this pin is connected directly to VDDQ, which enables
the minimum impedance mode. This pin cannot be connected directly to GND or left unconnected.
DOFF
Input
DLL Turn Off, Active LOW. Connecting this pin to ground turns off the DLL inside the device. The
timings in the DLL turned off operation is different from those listed in this datasheet.
TDO
Output
TCK
Input
TCK pin for JTAG
TDI
Input
TDI pin for JTAG
TMS
Input
TMS pin for JTAG
NC
N/A
Not connected to the die. It is tied to any voltage level
NC/36M
N/A
Not connected to the die. It is tied to any voltage level
NC/72M
N/A
Not connected to the die. It is tied to any voltage level
NC/144M
N/A
Not connected to the die. It is tied to any voltage level
NC/288M
N/A
Not connected to the die. It is tied to any voltage level
VREF
VDD
VSS
VDDQ
InputReference
TDO for JTAG
Reference Voltage Input. Static input is used to set the reference level for HSTL inputs, Outputs,
and AC measurement points
Power Supply Power supply inputs to the core of the device
Ground
Ground for the device
Power Supply Power supply inputs for the outputs of the device
Document #: 38-05619 Rev. *E
Page 7 of 28
CY7C1310BV18
CY7C1910BV18
CY7C1312BV18
CY7C1314BV18
Functional Overview
The CY7C1310BV18, CY7C1910BV18, CY7C1312BV18, and
CY7C1314BV18 are synchronous pipelined Burst SRAMs
equipped with both a read port and a write port. The read port is
dedicated to read operations and the write port is dedicated to
write operations. Data flows into the SRAM through the write port
and out through the read port. These devices multiplex the
address inputs to minimize the number of address pins required.
The QDR-II completely eliminates the need to “turn-around” the
data bus by having separate read and write ports. This avoids
any possible data contention, and thereby simpliflies system
design. Each access consists of two 8-bit data transfers in the
case of CY7C1310BV18, two 9-bit data transfers in the case of
CY7C1910BV18, two 18-bit data transfers in the case of
CY7C1312BV18, and two 36-bit data transfers in the case of
CY7C1314BV18, in one clock cycle.
Accesses for both ports are initiated on the rising edge of the
positive Input Clock (K). All synchronous input timings are referenced from the rising edge of the input clocks (K and K) and all
output timings are referenced to the rising edge of output clocks
(C and C or K and K when in single clock mode).
All synchronous data inputs (D[x:0]) pass through input registers
controlled by the input clocks (K and K). All synchronous data
outputs (Q[x:0]) pass through output registers controlled by the
rising edge of the output clocks (C and C or K and K when in
single clock mode).
All synchronous control (RPS, WPS, BWS[x:0]) inputs pass
through input registers controlled by the rising edge of the input
clocks (K and K).
CY7C1312BV18 is described in the following sections. The
same basic descriptions apply to CY7C1310BV18
CY7C1910BV18 and CY7C1314BV18.
Read Operations
The CY7C1312BV18 is organized internally as 2 arrays of 512K
x 18. Accesses are completed in a burst of two sequential 18-bit
data words. Read operations are initiated by asserting RPS
active at the rising edge of the Positive Input Clock (K). The
address is latched on the rising edge of the K Clock. The address
presented to address inputs is stored in the read address
register. Following the next K clock rise, the corresponding
lowest order 18-bit word of data is driven onto the Q[17:0] using
C as the output timing reference. On the subsequent rising edge
of C, the next 18-bit data word is driven onto the Q[17:0]. The
requested data is valid 0.45 ns from the rising edge of the output
clock (C and C or K and K when in single clock mode).
Synchronous internal circuitry automatically tri-states the outputs
following the next rising edge of the Output Clocks (C/C). This
enables a seamless transition between devices without the
insertion of wait states in a depth expanded memory.
Write Operations
Write operations are initiated by asserting WPS active at the
rising edge of the Positive Input Clock (K). On the same K clock
rise, the data presented to D[17:0] is latched and stored into the
lower 18-bit Write Data register provided BWS[1:0] are both
asserted active. On the subsequent rising edge of the Negative
Input Clock (K), the address is latched and the information
presented to D[17:0] is stored into the Write Data register provided
Document #: 38-05619 Rev. *E
BWS[1:0] are both asserted active. The 36-bits of data is then
written into the memory array at the specified location. When
deselected, the write port ignores all inputs after the pending
Write operations are completed.
Byte Write Operations
Byte Write operations are supported by the CY7C1312BV18. A
Write operation is initiated as described in the Write Operations
section above. The bytes that are written are determined by
BWS0 and BWS1, which are sampled with each 18-bit data word.
You can latch and write the data presented into the device by
asserting the appropriate Byte Write Select input during the data
portion of a Write. Deasserting the Byte Write Select input during
the data portion of a write enables the data stored in the device
for that byte to remain unaltered. This feature can be used to
simplify Read/Modify/Write operations to a Byte Write operation.
Single Clock Mode
The CY7C1312BV18 can be used with a single clock that
controls both the input and output registers. In this mode, the
device recognizes only a single pair of input clocks (K and K) that
control both the input and output registers. This operation is
identical to the operation if the device had zero skew between
the K/K and C/C clocks. All timing parameters remain the same
in this mode. To use this mode of operation, the user must tie C
and C HIGH at power on. This function is a strap option and not
alterable during device operation.
Concurrent Transactions
The Read and Write ports on the CY7C1312BV18 operate
completely independently of one another. Since each port
latches the address inputs on different clock edges, the user can
Read or Write to any location, regardless of the transaction on
the other port. Also, reads and writes can be started in the same
clock cycle. If the ports access the same location at the same
time, the SRAM delivers the most recent information associated
with the specified address location. This includes forwarding
data from a Write cycle that was initiated on the previous K clock
rise.
Depth Expansion
The CY7C1312BV18 has a Port Select input for each port. This
enables easy depth expansion. Both Port Selects are sampled
on the rising edge of the Positive Input Clock only (K). Each port
select input can deselect the specified port. Deselecting a port
does not affect the other port. All pending transactions (read and
write) are completed prior to the device being deselected.
Programmable Impedance
An external resistor, RQ, must be connected between the ZQ pin
on the SRAM and VSS to enable the SRAM to adjust its output
driver impedance. The value of RQ must be 5x the value of the
intended line impedance driven by the SRAM. The allowable
range of RQ to guarantee impedance matching with a tolerance
of ±15% is between 175Ω and 350Ω, with VDDQ = 1.5V.The
output impedance is adjusted every 1024 cycles upon power up
to account for drifts in supply voltage and temperature.
Echo Clocks
Echo clocks are provided on the QDR-II to simplify data capture
on high speed systems. Two echo clocks are generated by the
Page 8 of 28
CY7C1310BV18
CY7C1910BV18
CY7C1312BV18
CY7C1314BV18
QDR-II. CQ is referenced with respect to C and CQ is referenced
with respect to C. These are free running clocks and are synchronized to the output clock (C/C) of the QDR-II. In the single clock
mode, CQ is generated with respect to K and CQ is generated
with respect to K. The timings for the echo clocks are shown in
the Switching Characteristics.
DLL
also be reset by slowing or stopping the input clock K and K for
a minimum of 30 ns. However, it is not necessary to specifically
reset the DLL set to lock the DLL to the desired frequency. The
DLL automatically locks 1024 clock cycles after a stable clock is
presented. The DLL may be disabled by applying ground to the
DOFF pin. For information refer to the application note ‘DLL
Considerations in QDRII/DDRII/QDRII+/DDRII+’.
These chips use a Delay Lock Loop (DLL) that is designed to
function between 80 MHz and the specified maximum clock
frequency. During power up, when the DOFF is tied HIGH, the
DLL gets locked after 1024 cycles of stable clock. The DLL can
Application Example
Figure 1 shows the use of QDR-II in an application.
Figure 1. Application Example
SRAM #1
Vt
R
D
A
R
P
S
#
W
P
S
#
B
W
S
#
DATA IN
DATA OUT
Address
RPS#
BUS
WPS#
MASTER
BWS#
(CPU CLKIN/CLKIN#
or
Source K
ASIC)
Source K#
ZQ
CQ/CQ#
Q
C C# K K#
R = 250οηµσ
SRAM #4
R
P
S
#
D
A
R
W
P
S
#
B
W
S
#
ZQ R = 250οηµσ
CQ/CQ#
Q
C C# K K#
Vt
Vt
Delayed K
Delayed K#
R
Document #: 38-05619 Rev. *E
R = 50οηµσ Vt = Vddq/2
Page 9 of 28
CY7C1310BV18
CY7C1910BV18
CY7C1312BV18
CY7C1314BV18
Truth Table
The truth table for the CY7C1310BV18, CY7C1910BV18, CY7C1312BV18, and CY7C1314BV18 follows.[1, 2, 3, 4, 5, 6]
Operation
K
Write Cycle:
Load address on the rising edge of K clock; input write data
on K and K rising edges.
L-H
X
L
D(A + 0) at K(t) ↑
Read Cycle:
Load address on the rising edge of K clock; wait one and a
half cycle; read data on C and C rising edges.
L-H
L
X
Q(A + 0) at C(t + 1)↑ Q(A + 1) at C(t + 2) ↑
NOP: No Operation
L-H
H
H
D=X
Q = High Z
D=X
Q = High Z
Stopped
X
X
Previous State
Previous State
Standby: Clock Stopped
RPS WPS
DQ
DQ
D(A + 1) at K(t) ↑
Write Cycle Descriptions
The write cycle description table for CY7C1314BV18 and CY7C1910BV18 follows. [1, 7]
BWS0/ BWS1/
K
K
L
L-H
–
During the data portion of a write sequence:
CY7C1310BV18 − both nibbles (D[7:0]) are written into the device,
CY7C1312BV18 − both bytes (D[17:0]) are written into the device.
L
L
–
L-H
During the data portion of a write sequence:
CY7C1310BV18 − both nibbles (D[7:0]) are written into the device,
CY7C1312BV18 − both bytes (D[17:0]) are written into the device.
L
H
L-H
–
During the data portion of a write sequence:
CY7C1310BV18 − only the lower nibble (D[3:0]) is written into the device. D[7:4] remains unaltered,
CY7C1312BV18 − only the lower byte (D[8:0]) is written into the device. D[17:9] remains unaltered.
L
H
–
L-H
During the data portion of a write sequence:
CY7C1310BV18 − only the lower nibble (D[3:0]) is written into the device. D[7:4] remains unaltered,
CY7C1312BV18 − only the lower byte (D[8:0]) is written into the device. D[17:9] remains unaltered.
H
L
L-H
–
During the data portion of a write sequence:
CY7C1310BV18 − only the upper nibble (D[7:4]) is written into the device. D[3:0] remains unaltered,
CY7C1312BV18 − only the upper byte (D[17:9]) is written into the device. D[8:0] remains unaltered.
H
L
–
L-H
During the data portion of a write sequence:
CY7C1310BV18 − only the upper nibble (D[7:4]) is written into the device. D[3:0] remains unaltered,
CY7C1312BV18 − only the upper byte (D[17:9]) is written into the device. D[8:0] remains unaltered.
H
H
L-H
–
No data is written into the devices during this portion of a write operation.
H
H
–
L-H
No data is written into the devices during this portion of a write operation.
NWS0
NWS1
L
Comments
Notes
1. X = “Don't Care,” H = Logic HIGH, L= Logic LOW, ↑represents rising edge.
2. Device powers up deselected and the outputs in a tri-state condition.
3. “A” represents address location latched by the devices when transaction was initiated. A + 0 and A + 1 represent the internal address sequence in the burst.
4. “t” represents the cycle at which a read/write operation is started. t + 1 and t + 2 are the first and second clock cycles respectively succeeding the “t” clock cycle.
5. Data inputs are registered at K and K rising edges. Data outputs are delivered on C and C rising edges, except when in single clock mode.
6. It is recommended that K = K and C = C = HIGH when clock is stopped. This is not essential, but permits most rapid restart by overcoming transmission line charging
symmetrically.
7. Assumes a write cycle was initiated per the Write Port Cycle Description Truth Table. NWS0, NWS1, BWS0, BWS1, BWS2 and BWS3 can be altered on different portions
of a write cycle, as long as the setup and hold requirements are achieved.
Document #: 38-05619 Rev. *E
Page 10 of 28
CY7C1310BV18
CY7C1910BV18
CY7C1312BV18
CY7C1314BV18
The write cycle description table for CY7C1910BV18 follows.[1, 7]
BWS0
L
K
L-H
K
–
Comments
During the data portion of a Write sequence:
CY7C1910BV18 − the single byte (D[8:0]) is written into the device
L
–
L-H
During the data portion of a Write sequence:
CY7C1910BV18 − the single byte (D[8:0]) is written into the device,
H
L-H
–
No data is written into the devices during this portion of a Write operation.
H
–
L-H
No data is written into the devices during this portion of a Write operation.
The write cycle description table for CY7C1314BV18 follows. [1, 7]
BWS0
BWS1
BWS2
BWS3
K
K
Comments
L
L
L
L
L-H
-
During the data portion of a write sequence, all four bytes (D[35:0]) are written into
the device.
L
L
L
L
-
L
H
H
H
L-H
L
H
H
H
-
H
L
H
H
L-H
H
L
H
H
-
H
H
L
H
L-H
H
H
L
H
-
H
H
H
L
L-H
H
H
H
L
-
H
H
H
H
L-H
H
H
H
H
-
Document #: 38-05619 Rev. *E
L-H During the data portion of a write sequence, all four bytes (D[35:0]) are written into
the device.
-
During the data portion of a write sequence, only the lower byte (D[8:0]) is written
into the device. D[35:9] remains unaltered.
L-H During the data portion of a write sequence, only the lower byte (D[8:0]) is written
into the device. D[35:9] remains unaltered.
-
During the data portion of a write sequence, only the byte (D[17:9]) is written into
the device. D[8:0] and D[35:18] remains unaltered.
L-H During the data portion of a write sequence, only the byte (D[17:9]) is written into
the device. D[8:0] and D[35:18] remains unaltered.
-
During the data portion of a write sequence, only the byte (D[26:18]) is written into
the device. D[17:0] and D[35:27] remains unaltered.
L-H During the data portion of a write sequence, only the byte (D[26:18]) is written into
the device. D[17:0] and D[35:27] remains unaltered.
During the data portion of a write sequence, only the byte (D[35:27]) is written into
the device. D[26:0] remains unaltered.
L-H During the data portion of a write sequence, only the byte (D[35:27]) is written into
the device. D[26:0] remains unaltered.
-
No data is written into the device during this portion of a write operation.
L-H No data is written into the device during this portion of a write operation.
Page 11 of 28
CY7C1310BV18
CY7C1910BV18
CY7C1312BV18
CY7C1314BV18
IEEE 1149.1 Serial Boundary Scan (JTAG)
These SRAMs incorporate a serial boundary scan test access
port (TAP) in the FBGA package. This part is fully compliant with
IEEE Standard #1149.1-2001. The TAP operates using JEDEC
standard 1.8V IO logic levels.
Disabling the JTAG Feature
It is possible to operate the SRAM without using the JTAG
feature. To disable the TAP controller, TCK must be tied LOW
(VSS) to prevent clocking of the device. TDI and TMS are internally pulled up and may be unconnected. They may alternately
be connected to VDD through a pull up resistor. TDO should be
left unconnected. Upon power up, the device comes up in a reset
state and does not interfere with the operation of the device.
Test Access Port—Test Clock
The test clock is used only with the TAP controller. All inputs are
captured on the rising edge of TCK. All outputs are driven from
the falling edge of TCK.
Test Mode Select
The TMS input is used to give commands to the TAP controller
and is sampled on the rising edge of TCK. It is allowable to leave
this pin unconnected if the TAP is not used. The pin is pulled up
internally, resulting in a logic HIGH level.
Test Data-In (TDI)
The TDI pin is used to serially input information into the registers
and can be connected to the input of any of the registers. The
register between TDI and TDO is chosen by the instruction that
is loaded into the TAP instruction register. For information on
loading the instruction register, see the TAP Controller State
Diagram on page 14. TDI is internally pulled up and can be
unconnected if the TAP is unused in an application. TDI is
connected to the most significant bit (MSB) on any register.
Instruction Register
Three-bit instructions can be serially loaded into the instruction
register. This register is loaded when it is placed between the TDI
and TDO pins as shown in TAP Controller Block Diagram on
page 15. Upon power up, the instruction register is loaded with
the IDCODE instruction. It is also loaded with the IDCODE
instruction if the controller is placed in a reset state as described
in the previous section.
When the TAP controller is in the Capture IR state, the two least
significant bits are loaded with a binary “01” pattern to enable
fault isolation of the board level serial test path.
Bypass Register
To save time when serially shifting data through registers, it is
sometimes advantageous to skip certain chips. The bypass
register is a single bit register that can be placed between TDI
and TDO pins.This enables shifting of data through the SRAM
with minimal delay.The bypass register is set LOW (VSS) when
the BYPASS instruction is executed.
Boundary Scan Register
The boundary scan register is connected to all of the input and
output pins on the SRAM. Several no connect (NC) pins are also
included in the scan register to reserve pins for higher density
devices.
The boundary scan register is loaded with the contents of the
RAM Input and Output ring when the TAP controller is in the
Capture-DR state and is then placed between the TDI and TDO
pins when the controller is moved to the Shift-DR state. The
EXTEST, SAMPLE/PRELOAD and SAMPLE Z instructions can
be used to capture the contents of the Input and Output ring.
The Boundary Scan Order on page 18 show the order in which
the bits are connected. Each bit corresponds to one of the bumps
on the SRAM package. The MSB of the register is connected to
TDI, and the LSB is connected to TDO.
Test Data-Out (TDO)
Identification (ID) Register
The TDO output pin is used to serially clock data-out from the
registers. The output is active depending upon the current state
of the TAP state machine (see Instruction Codes on page 17.The
output changes on the falling edge of TCK. TDO is connected to
the least significant bit (LSB) of any register.
The ID register is loaded with a vendor-specific, 32-bit code
during the Capture-DR state when the IDCODE command is
loaded in the instruction register. The IDCODE is hardwired into
the SRAM and can be shifted out when the TAP controller is in
the Shift-DR state. The ID register has a vendor code and other
information described in the Identification Register Definitions on
page 17.
Performing a TAP Reset
A Reset is performed by forcing TMS HIGH (VDD) for five rising
edges of TCK. This RESET does not affect the operation of the
SRAM and may be performed while the SRAM is operating. At
power up, the TAP is reset internally to ensure that TDO comes
up in a high Z state.
TAP Instruction Set
TAP Registers
Eight different instructions are possible with the three-bit
instruction register. All combinations are listed in the Instruction
Code table. Three of these instructions are listed as RESERVED
and should not be used. The other five instructions are described
in detail below.
Data is scanned into and out of the SRAM test circuitry by
registers that are connected between the TDI and TDO pins.
Only one register can be selected at a time through the
instruction registers. Data is serially loaded into the TDI pin on
the rising edge of TCK. Data is output on the TDO pin on the
falling edge of TCK.
Instructions are loaded into the TAP controller during the Shift-IR
state when the instruction register is placed between TDI and
TDO. During this state, instructions are shifted through the
instruction register through the TDI and TDO pins.Once it is
shifted in, the TAP controller is moved into the Update-IR state
to execute the instruction.
Document #: 38-05619 Rev. *E
Page 12 of 28
CY7C1310BV18
CY7C1910BV18
CY7C1312BV18
CY7C1314BV18
IDCODE
A vendor specific 32-bit code is loaded into the instruction
register by the IDCODE instruction. It also places the instruction
register between the TDI and TDO pins and the IDCODE is
shifted out of the device when the TAP controller enters the
Shift-DR state.The IDCODE instruction is loaded into the
instruction register upon power up or whenever the TAP
controller is given a test logic reset state.
SAMPLE Z
The shifting of data for the SAMPLE and PRELOAD phases can
occur concurrently when required—that is, while data captured
is shifted out, the preloaded data can be shifted in.
BYPASS
When the BYPASS instruction is loaded in the instruction register
and the TAP is placed in a Shift-DR state, the bypass register is
placed between the TDI and TDO pins. The advantage of the
BYPASS instruction is that it shortens the boundary scan path
when multiple devices are connected together on a board.
The SAMPLE Z instruction is connected between the TDI and
TDO pins by the boundary scan register when the TAP controller
is in a Shift-DR state. The SAMPLE Z command puts the output
bus into a High Z state until the next command is given during
the “Update IR” state.
EXTEST
SAMPLE/PRELOAD
EXTEST OUTPUT BUS TRI-STATE
SAMPLE/PRELOAD is a 1149.1 mandatory instruction. When
the SAMPLE/PRELOAD instructions are loaded into the
instruction register and the TAP controller is in the Capture-DR
state, a snapshot of data on the inputs and output pins is
captured in the boundary scan register.
The user must be aware that the TAP controller clock can only
operate at a frequency up to 20 MHz, while the SRAM clock
operates more than an order of magnitude faster. Because there
is a large difference in the clock frequencies, it is possible that
during the Capture-DR state, an input or output undergoes a
transition. The TAP may then try to capture a signal while in
transition (metastable state). This does not harm the device, but
there is no guarantee as to the value that is captured.
Repeatable results may not be possible.
To guarantee that the boundary scan register captures the
correct value of a signal, the SRAM signal must be stabilized
long enough to meet the TAP controller's capture setup plus hold
times (tCS and tCH). The SRAM clock input might not be captured
correctly if there is no way in a design to stop (or slow) the clock
during a SAMPLE/PRELOAD instruction. If this is an issue, it is
still possible to capture all other signals and simply ignore the
value of the CK and CK captured in the boundary scan register.
Once the data is captured, it is possible to shift out the data by
putting the TAP into the Shift-DR state. This places the boundary
scan register between the TDI and TDO pins.
The EXTEST instruction drives out the preloaded data through
the system output pins.This instruction also selects the boundary
scan register that is connected for serial access between the TDI
and TDO in the shift-DR controller state.
IEEE Standard 1149.1 mandates that the TAP controller be able
to put the output bus into a tri-state mode.
The boundary scan register has a special bit located at bit #47.
When this scan cell, called the “extest output bus tri-state,” is
latched into the preload register during the “Update-DR” state in
the TAP controller, it directly controls the state of the output
(Q-bus) pins, when the EXTEST is entered as the current
instruction. When HIGH, it enables the output buffers to drive the
output bus. When LOW, this bit places the output bus into a High
Z condition.
This bit can be set by entering the SAMPLE/PRELOAD or
EXTEST command, and then shifting the desired bit into that cell,
during the “Shift-DR” state. During “Update-DR”, the value
loaded into that shift-register cell latches into the preload
register. When the EXTEST instruction is entered, this bit directly
controls the output Q-bus pins. Note that this bit is pre-set LOW
to enable the output when the device is powered-up, and also
when the TAP controller is in the “Test-Logic-Reset” state.
Reserved
These instructions are not implemented but are reserved for
future use. Do not use these instructions.
An initial data pattern is placed by PRELOAD at the latched
parallel outputs of the boundary scan register cells prior to the
selection of another boundary scan test operation.
Document #: 38-05619 Rev. *E
Page 13 of 28
CY7C1310BV18
CY7C1910BV18
CY7C1312BV18
CY7C1314BV18
TAP Controller State Diagram
The tap controller state diagram for the CY7C1310BV18, CY7C1910BV18, CY7C1312BV18 and CY7C1314BV18 follows.[8]
1
TEST-LOGIC
RESET
0
0
TEST-LOGIC/
IDLE
1
1
SELECT
DR-SCAN
SELECT
IR-SCAN
0
0
1
1
CAPTURE-DR
CAPTURE-IR
0
0
SHIFT-DR
0
1
1
EXIT1-DR
1
EXIT1-IR
0
0
PAUSE-DR
0
0
PAUSE-IR
1
1
0
EXIT2-DR
EXIT2-IR
1
1
UPDATE-DR
1
0
SHIFT-IR
1
0
1
0
UPDATE-IR
1
0
Note
8. The 0/1 next to each state represents the value at TMS at the rising edge of TCK
Document #: 38-05619 Rev. *E
Page 14 of 28
CY7C1310BV18
CY7C1910BV18
CY7C1312BV18
CY7C1314BV18
TAP Controller Block Diagram
0
Bypass Register
Selection
Circuitry
2
TDI
1
0
1
0
Selection
Circuitry
TDO
Instruction Register
31 30 29
.
.
2
Identification Register
106 .
.
.
.
2
1
0
Boundary Scan Register
TCK
TAP Controller
TMS
TAP Electrical Characteristics
Over the operating range [9, 10, 11]
Parameter
Description
Test Conditions
Min
Max
Unit
VOH1
Output HIGH Voltage
IOH = −2.0 mA
1.4
V
VOH2
Output HIGH Voltage
IOH = −100 µA
1.6
V
VOL1
Output LOW Voltage
IOL = 2.0 mA
0.4
V
VOL2
Output LOW Voltage
IOL = 100 µA
0.2
V
VIH
Input HIGH Voltage
VIL
Input LOW Voltage
IX
Input and OutputLoad Current
0.65VDD VDD + 0.3
GND ≤ VI ≤ VDD
V
–0.3
0.35VDD
V
−5
5
µA
Notes
9. These characteristics pertain to the TAP inputs (TMS, TCK, TDI and TDO). Parallel load levels are specified in the Electrical Characteristics table.
10. Overshoot: VIH(AC) < VDDQ +0.85V (Pulse width less than tCYC/2), Undershoot: VIL(AC) > –1.5V (Pulse width less than tCYC/2).
11. All voltage referenced to Ground.
Document #: 38-05619 Rev. *E
Page 15 of 28
CY7C1310BV18
CY7C1910BV18
CY7C1312BV18
CY7C1314BV18
TAP AC Switching Characteristics
Over the operating range [12, 13]
Parameter
Description
Min
Max
Unit
tTCYC
TCK Clock Cycle Time
tTF
TCK Clock Frequency
tTH
TCK Clock HIGH
20
ns
tTL
TCK Clock LOW
20
ns
tTMSS
TMS Setup to TCK Clock Rise
5
ns
tTDIS
TDI Setup to TCK Clock Rise
5
ns
tCS
Capture Setup to TCK Rise
5
ns
50
ns
20
MHz
Setup Times
Hold Times
tTMSH
TMS Hold after TCK Clock Rise
5
ns
tTDIH
TDI Hold after Clock Rise
5
ns
tCH
Capture Hold after Clock Rise
5
ns
Output Times
tTDOV
TCK Clock LOW to TDO Valid
tTDOX
TCK Clock LOW to TDO Invalid
10
ns
0
ns
TAP Timing and Test Conditions
The tap timing and test conditions for CY7C1310BV18, CY7C1910BV18, CY7C1312BV18 and CY7C1314BV18 follows.[12]
0.9V
ALL INPUT PULSES
50Ω
1.8V
0.9V
TDO
0V
Z0 = 50Ω
(a)
CL = 20 pF
tTH
GND
tTL
Test Clock
TCK
tTMSH
tTMSS
tTCYC
Test Mode Select
TMS
tTDIS
tTDIH
Test Data In
TDI
Test Data Out
TDO
tTDOV
tTDOX
Notes
12. Test conditions are specified using the load in TAP AC test conditions. tR/tF = 1 ns.
13. tCS and tCH refer to the set up and hold time requirements of latching data from the boundary scan register
Document #: 38-05619 Rev. *E
Page 16 of 28
CY7C1310BV18
CY7C1910BV18
CY7C1312BV18
CY7C1314BV18
Identification Register Definitions
Value
Instruction Field
CY7C1310BV18
CY7C1910BV18
CY7C1312BV18
CY7C1314BV18
000
000
000
000
Cypress Device ID
(28:12)
11010011010000101
11010011010001101
11010011010010101
Cypress JEDEC ID
(11:1)
00000110100
00000110100
00000110100
00000110100
1
1
1
1
Revision Number
(31:29)
ID Register
Presence (0)
Description
Version number.
11010011010100101 Defines the type of
SRAM.
Unique identification of SRAM
vendor.
Indicates the
presence of an ID
register.
Scan Register Sizes
Register Name
Bit Size
Instruction
3
Bypass
1
ID
32
Boundary Scan Cells
107
Instruction Codes
Instruction
Code
Description
EXTEST
000
Captures the Input or Output ring contents.
IDCODE
001
Loads the ID register with the vendor ID code and places the register between TDI
and TDO. This operation does not affect SRAM operation.
SAMPLE Z
010
Captures the Input or Output contents. Places the boundary scan register between
TDI and TDO. Forces all SRAM output drivers to a High Z state.
RESERVED
011
Do Not Use: This instruction is reserved for future use.
SAMPLE/PRELOAD
100
Captures the Input or Output ring contents. Places the boundary scan register
between TDI and TDO. Does not affect the SRAM operation.
RESERVED
101
Do Not Use: This instruction is reserved for future use.
RESERVED
110
Do Not Use: This instruction is reserved for future use.
BYPASS
111
Places the bypass register between TDI and TDO. This operation does not affect
SRAM operation.
Document #: 38-05619 Rev. *E
Page 17 of 28
CY7C1310BV18
CY7C1910BV18
CY7C1312BV18
CY7C1314BV18
Boundary Scan Order
Bit #
Bump ID
Bit #
Bump ID
Bit #
Bump ID
Bit #
Bump ID
0
6R
27
11H
54
7B
81
3G
1
6P
28
10G
55
6B
82
2G
2
6N
29
9G
56
6A
83
1J
3
7P
30
11F
57
5B
84
2J
4
7N
31
11G
58
5A
85
3K
5
7R
32
9F
59
4A
86
3J
6
8R
33
10F
60
5C
87
2K
7
8P
34
11E
61
4B
88
1K
8
9R
35
10E
62
3A
89
2L
9
11P
36
10D
63
1H
90
3L
10
10P
37
9E
64
1A
91
1M
11
10N
38
10C
65
2B
92
1L
12
9P
39
11D
66
3B
93
3N
13
10M
40
9C
67
1C
94
3M
14
11N
41
9D
68
1B
95
1N
15
9M
42
11B
69
3D
96
2M
16
9N
43
11C
70
3C
97
3P
17
11L
44
9B
71
1D
98
2N
18
11M
45
10B
72
2C
99
2P
19
9L
46
11A
73
3E
100
1P
20
10L
47
Internal
74
2D
101
3R
21
11K
48
9A
75
2E
102
4R
22
10K
49
8B
76
1E
103
4P
23
9J
50
7C
77
2F
104
5P
24
9K
51
6C
78
3F
105
5N
25
10J
52
8A
79
1G
106
5R
26
11J
53
7A
80
1F
Document #: 38-05619 Rev. *E
Page 18 of 28
CY7C1310BV18
CY7C1910BV18
CY7C1312BV18
CY7C1314BV18
Power Up Sequence in QDR-II SRAM
QDR-II SRAMs must be powered up and initialized in a
predefined manner to prevent undefined operations. During
Power Up, when the DOFF is tied HIGH, the DLL gets locked
after 1024 cycles of stable clock. It is recommended that the
DOFF pin be pulled HIGH via a pull up resistor of 1 Kohm.
Power Up Sequence
■
Apply power and drive DOFF LOW (All other inputs can be
HIGH or LOW)
❐ Apply VDD before VDDQ
❐
Apply VDDQ before VREF or at the same time as VREF
■
After the power and clock (K, K, C, C) are stable take DOFF
HIGH
■
The additional 1024 cycles of clocks are required for the DLL
to lock
DLL Constraints
■
DLL uses either K or C clock as its synchronizing input.The
input should have low phase jitter, which is specified as tKC
■
The DLL functions at frequencies down to 80 MHz
■
If the input clock is unstable and the DLL is enabled, then the
DLL may lock to an incorrect frequency, causing unstable
SRAM behavior
Var
~
~
Power Up Waveforms
K
K
~
~
Unstable Clock
> 1024 Stable clock
Start Normal
Operation
Clock Start (Clock Starts after V DD / V DDQ Stable)
VDD / VDDQ
DOFF
Document #: 38-05619 Rev. *E
V DD / V DDQ Stable (< +/- 0.1V DC per 50ns )
Fix High (or tied to VDDQ)
Page 19 of 28
CY7C1310BV18
CY7C1910BV18
CY7C1312BV18
CY7C1314BV18
DC Input Voltage[10] .............................. –0.5V to VDD + 0.3V
Maximum Ratings
Exceeding the maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied ............................................ –55°C to +125°C
Current into Outputs (LOW) ........................................ 20 mA
Static Discharge Voltage.......................................... > 2001V
(MIL-STD-883, Method 3015)
Latch up Current.................................................... > 200 mA
Operating Range
Supply Voltage on VDD Relative to GND ........–0.5V to +2.9V
Range
Supply Voltage on VDDQ Relative to GND.......–0.5V to +VDD
DC Voltage Applied to Outputs
in High Z State ..................................... –0.5V to VDDQ + 0.3V
Commercial
Industrial
Ambient
Temperature (TA)
VDD[16]
VDDQ[16]
0°C to +70°C
1.8 ± 0.1 V
1.4V to
VDD
–40°C to +85°C
Electrical Characteristics
Over the operating range [11, 16]
DC Electrical Characteristics Over the Operating Range
Parameter
Description
Test Conditions
Min
Typ.
Max
Unit
VDD
Power Supply Voltage
1.7
1.8
1.9
V
VDDQ
I/O Supply Voltage
1.4
1.5
VDD
V
VOH
Output HIGH Voltage
Note 14
VDDQ/2 – 0.12
VDDQ/2 + 0.12
V
VOL
Output LOW Voltage
Note 15
VDDQ/2 – 0.12
VDDQ/2 + 0.12
V
VOH(LOW)
Output HIGH Voltage
IOH = −0.1 mA, Nominal Impedance
VDDQ – 0.2
VDDQ
V
VOL(LOW)
Output LOW Voltage
IOL = 0.1 mA, Nominal Impedance
VSS
0.2
V
Input HIGH
Voltage[10]
VREF + 0.1
VDDQ+0.3
V
VIL
Input LOW
Voltage[10]
–0.3
VREF – 0.1
V
IX
Input Leakage Current
GND ≤ VI ≤ VDDQ
−5
5
µA
IOZ
Output Leakage Current
GND ≤ VI ≤ VDDQ, Output Disabled
−5
5
µA
0.95
V
VDD = Max., IOUT = 0 mA, f 167 MHz
= fMAX = 1/tCYC
200 MHz
500
mA
550
mA
250 MHz
600
mA
Max. VDD, Both Ports
167 MHz
Deselected, VIN ≥ VIH or
VIN ≤ VIL f = fMAX = 1/tCYC, 200 MHz
Inputs Static
250 MHz
240
mA
260
mA
280
mA
VIH
VREF
Input Reference Voltage
IDD
VDD Operating Supply
ISB1
Automatic Power down
Current
[17]
Typical Value = 0.75V
0.68
0.75
AC Input Requirements Over the Operating Range
Min
Typ
Max
Unit
VIH
Parameter
Input HIGH Voltage
Description
Test Conditions
VREF + 0.2
–
–
V
VIL
Input LOW Voltage
–
–
VREF – 0.2
V
Notes
14. Output are impedance controlled. IOH = –(VDDQ/2)/(RQ/5) for values of 175Ω <= RQ <= 350Ωs.
15. Output are impedance controlled. IOL = (VDDQ/2)/(RQ/5) for values of 175Ω <= RQ <= 350Ω.
16. Power up: Assumes a linear ramp from 0V to VDD(min.) within 200 ms. During this time VIH < VDD and VDDQ < VDD.
17. VREF (Min) = 0.68V or 0.46VDDQ, whichever is larger, VREF (Max) = 0.95V or 0.54VDDQ, whichever is smaller.
Document #: 38-05619 Rev. *E
Page 20 of 28
CY7C1310BV18
CY7C1910BV18
CY7C1312BV18
CY7C1314BV18
Capacitance
Tested initially and after any design or process change that may affect these parameters.
Parameter
Description
Test Conditions
CIN
Input Capacitance
CCLK
Clock Input Capacitance
CO
Output Capacitance
TA = 25°C, f = 1 MHz,
VDD = 1.8V
VDDQ = 1.5V
Max
Unit
5
pF
6
pF
7
pF
165 FBGA
Package
Unit
28.51
°C/W
5.91
°C/W
Thermal Resistance
Tested initially and after any design or process change that may affect these parameters.
Parameter
Description
ΘJA
Thermal Resistance
(Junction to Ambient)
ΘJC
Thermal Resistance
(Junction to Case)
Test Conditions
Test conditions follow standard test methods and
procedures for measuring thermal impedance, per
EIA/JESD51.
AC Test Loads and Waveforms
VREF = 0.75V
VREF
0.75V
VREF
OUTPUT
Z0 = 50Ω
Device
Under
Test
ZQ
RL = 50Ω
VREF = 0.75V
RQ =
250Ω
0.75V
R = 50Ω
ALL INPUT PULSES
1.25V
0.75V
OUTPUT
Device
Under
Test ZQ
5 pF
[18]
0.25V
Slew Rate = 2 V/ns
RQ =
250Ω
(a)
(b)
Note
18. Unless otherwise noted, test conditions assume signal transition time of 2V/ns, timing reference levels of 0.75V, Vref = 0.75V, RQ = 250Ω, VDDQ = 1.5V, input pulse
levels of 0.25V to 1.25V, and output loading of the specified IOL/IOH and load capacitance shown in (a) of AC Test Loads.
Document #: 38-05619 Rev. *E
Page 21 of 28
CY7C1310BV18
CY7C1910BV18
CY7C1312BV18
CY7C1314BV18
Switching Characteristics
Over the operating range [18, 19]
Cypress Consortium
Parameter Parameter
Description
250 MHz
200 MHz
167 MHz
Min Max Min Max Min Max
Unit
tPOWER
tKHKH
VDD(Typical) to the first Access[20]
tCYC
tKHKL
K Clock and C Clock Cycle Time
4.0
6.3
5.0
7.9
6.0
7.9
ns
tKH
tKLKH
Input Clock (K/K and C/C) HIGH
1.6
–
2.0
–
2.4
–
ns
tKL
tKHKH
Input Clock (K/K and C/C) LOW
1.6
–
2.0
–
2.4
–
ns
tKHKH
tKHCH
K Clock Rise to K Clock Rise and C to C Rise
(rising edge to rising edge)
1.8
–
2.2
–
2.7
–
ns
tKHCH
tKHKH
K/K Clock Rise to C/C Clock Rise (rising edge to rising edge) 0.0
1.8
0.0
2.2
0.0
2.7
ns
1
1
1
ms
Setup Times
tSA
tAVKH
Address Setup to K Clock Rise
0.35
–
0.4
–
0.5
–
ns
tSC
tIVKH
0.35
–
0.4
–
0.5
–
ns
tSCDDR
tIVKH
Control Setup to K Clock Rise (RPS, WPS)
Double Data Rate Control Setup to Clock (K/K) Rise
(BWS0, BWS1, BWS3, BWS4)
0.35
–
0.4
–
0.5
–
ns
tSD[21]
tDVKH
D[X:0] Setup to Clock (K/K) Rise
0.35
–
0.4
–
0.5
–
ns
Hold Times
tHA
tKHAX
Address Hold after K Clock Rise
0.35
–
0.4
–
0.5
–
ns
tHC
tKHIX
0.35
–
0.4
–
0.5
–
ns
tHCDDR
tKHIX
Control Hold after K Clock Rise (RPS, WPS)
Double Data Rate Control Hold after Clock
(K/K) Rise (BWS0, BWS1, BWS3, BWS4)
0.35
–
0.4
–
0.5
–
ns
tHD
tKHDX
D[X:0] Hold after Clock (K/K) Rise
0.35
–
0.4
–
0.5
–
ns
–
0.45
–
0.45
–
0.50
ns
–0.45
–
-0.45
–
-0.50
–
ns
–
0.45
–
0.45
–
0.50
ns
–0.45
–
–0.45
–
–0.50
–
ns
–
0.30
–
0.35
–
0.40
ns
–0.30
–
–0.35
–
–0.40
–
ns
–
0.45
–
0.45
–
0.50
ns
–0.45
–
–0.45
–
–0.50
–
ns
–
0.20
–
0.20
–
0.20
ns
Output Times
tCO
tCHQV
C/C Clock Rise (or K/K in Single Clock Mode) to Data Valid
tDOH
tCHQX
Data Output Hold after Output C/C Clock Rise
(Active to Active)
tCCQO
tCHCQV
C/C Clock Rise to Echo Clock Valid
tCQOH
tCHCQX
Echo Clock Hold after C/C Clock Rise
tCQD
tCQHQV
Echo Clock High to Data Valid
tCQDOH
tCQHQX
Echo Clock High to Data Invalid
tCHZ
tCHQZ
Clock (C/C) Rise to High Z (Active to High Z) [22, 23]
tCLZ
tCHQX1
Clock (C/C) Rise to Low Z [22,23]
DLL Timing
tKC Var
tKC Var
Clock Phase Jitter
tKC lock
tKC lock
DLL Lock Time (K, C)
1024
–
1024
–
1024
–
cycles
tKC Reset
tKC Reset
K Static to DLL Reset
30
–
30
–
30
–
ns
Notes
19. All devices can operate at clock frequencies as low as 119 MHz. When a part with a maximum frequency above 133 MHz is operating at a lower clock frequency, it
requires the input timings of the frequency range in which it is being operated and outputs data with the output timings of that frequency range.
20. This part has a voltage regulator internally; tPOWER is the time that the power needs is supplied above VDD minimum initially before a read or write operation can be
initiated.
21. For D2 data signal on CY7C1910BV18 device, tSD is 0.5 ns for 200 MHz, and 250 MHz frequencies.
22. tCHZ, tCLZ, are specified with a load capacitance of 5 pF as in (b) of AC Test Loads. Transition is measured ± 100 mV from steady-state voltage.
23. At any voltage and temperature tCHZ is less than tCLZ and tCHZ less than tCO.
Document #: 38-05619 Rev. *E
Page 22 of 28
CY7C1310BV18
CY7C1910BV18
CY7C1312BV18
CY7C1314BV18
Switching Waveform
Figure 2 shows the read, write, and deselect sequence.[24, 25, 26]
Figure 2. Read/Write/Deselect Sequence
READ
WRITE
READ
WRITE
READ
WRITE
NOP
WRITE
NOP
1
2
3
4
5
6
7
8
9
10
K
tKH
tKL
tKHKH
tCYC
K
RPS
tSC
t HC
WPS
A
D
A1
A2
tSA tHA
tSA tHA
D11
D30
A0
D10
A3
A4
A5
D31
D50
D51
tSD
Q00
t CLZ
C
tKL
tKH
tKHCH
D60
D61
tSD tHD
tHD
Q
tKHCH
A6
Q01
tDOH
tCO
Q20
Q21
Q41
Q40
tCQDOH
t CHZ
tCQD
t CYC
tKHKH
C
tCQOH
tCCQO
CQ
tCQOH
tCCQO
CQ
DON’T CARE
UNDEFINED
Notes
24. Q00 refers to output from address A0. Q01 refers to output from the next internal burst address following A0, that is, A0 + 1.
25. Output are disabled (High Z) one clock cycle after a NOP.
26. In this example, if address A2 = A1, then data Q20 = D10 and Q21 = D11. Write data is forwarded immediately as read results. This note applies to the whole diagram.
Document #: 38-05619 Rev. *E
Page 23 of 28
CY7C1310BV18
CY7C1910BV18
CY7C1312BV18
CY7C1314BV18
Ordering Information
Not all of the speed, package and temperature ranges are available. Please contact your local sales representative or
visit www.cypress.com for actual products offered
Speed
(MHz)
250
Ordering Code
CY7C1310BV18-250BZC
Package
Diagram
Package Type
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm)
Operating
Range
Commercial
CY7C1910BV18-250BZC
CY7C1312BV18-250BZC
CY7C1314BV18-250BZC
CY7C1310BV18-250BZXC
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free
CY7C1910BV18-250BZXC
CY7C1312BV18-250BZXC
CY7C1314BV18-250BZXC
CY7C1310BV18-250BZI
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm)
Industrial
CY7C1910BV18-250BZI
CY7C1312BV18-250BZI
CY7C1314BV18-250BZI
CY7C1310BV18-250BZXI
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free
CY7C1910BV18-250BZXI
CY7C1312BV18-250BZXI
CY7C1314BV18-250BZXI
200
CY7C1310BV18-200BZC
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm)
Commercial
CY7C1910BV18-200BZC
CY7C1312BV18-200BZC
CY7C1314BV18-200BZC
CY7C1310BV18-200BZXC
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free
CY7C1910BV18-200BZXC
CY7C1312BV18-200BZXC
CY7C1314BV18-200BZXC
CY7C1310BV18-200BZI
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm)
Industrial
CY7C1910BV18-200BZI
CY7C1312BV18-200BZI
CY7C1314BV18-200BZI
CY7C1310BV18-200BZXI
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free
CY7C1910BV18-200BZXI
CY7C1312BV18-200BZXI
CY7C1314BV18-200BZXI
Document #: 38-05619 Rev. *E
Page 24 of 28
CY7C1310BV18
CY7C1910BV18
CY7C1312BV18
CY7C1314BV18
Ordering Information (continued)
Not all of the speed, package and temperature ranges are available. Please contact your local sales representative or
visit www.cypress.com for actual products offered
Speed
(MHz)
167
Ordering Code
CY7C1310BV18-167BZC
Package
Diagram
Package Type
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm)
Operating
Range
Commercial
CY7C1910BV18-167BZC
CY7C1312BV18-167BZC
CY7C1314BV18-167BZC
CY7C1310BV18-167BZXC
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free
CY7C1910BV18-167BZXC
CY7C1312BV18-167BZXC
CY7C1314BV18-167BZXC
CY7C1310BV18-167BZI
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm)
Industrial
CY7C1910BV18-167BZI
CY7C1312BV18-167BZI
CY7C1314BV18-167BZI
CY7C1310BV18-167BZXI
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free
CY7C1910BV18-167BZXI
CY7C1312BV18-167BZXI
CY7C1314BV18-167BZXI
Document #: 38-05619 Rev. *E
Page 25 of 28
CY7C1310BV18
CY7C1910BV18
CY7C1312BV18
CY7C1314BV18
Package Diagram
Figure 3. 165-Ball FBGA (13 x 15 x 1.4 mm) (51-85180)
BOTTOM VIEW
PIN 1 CORNER
TOP VIEW
Ø0.05 M C
Ø0.25 M C A B
PIN 1 CORNER
Ø0.50 -0.06
(165X)
+0.14
1
2
3
4
5
6
7
8
9
10
11
11
9
8
7
6
5
4
3
2
1
A
B
B
C
C
1.00
A
D
D
E
F
F
G
G
H
J
14.00
E
15.00±0.10
15.00±0.10
10
H
J
K
L
L
7.00
K
M
M
N
N
P
P
R
R
A
A
1.00
5.00
10.00
B
B
13.00±0.10
13.00±0.10
1.40 MAX.
0.15 C
0.53±0.05
0.25 C
0.15(4X)
NOTES :
SOLDER PAD TYPE : NON-SOLDER MASK DEFINED (NSMD)
PACKAGE WEIGHT : 0.475g
JEDEC REFERENCE : MO-216 / DESIGN 4.6C
PACKAGE CODE : BB0AC
0.35±0.06
0.36
SEATING PLANE
C
Document #: 38-05619 Rev. *E
51-85180-*A
Page 26 of 28
CY7C1310BV18
CY7C1910BV18
CY7C1312BV18
CY7C1314BV18
Document History Page
Document Title: CY7C1310BV18/CY7C1910BV18/CY7C1312BV18/CY7C1314BV18, 18-Mbit QDR™-II SRAM 2 Word Burst
Architecture
Document Number: 38-05619
REV.
ECN No.
Issue Date
Orig. of
Change
Description of Change
**
252474
See ECN
SYT
New datasheet
*A
325581
See ECN
SYT
Removed CY7C1910BV18 from the title
Included 300 MHz Speed Bin
Added Industrial Temperature Grade
Replaced TBDs for IDD and ISB1 specifications
Replaced the TBDs on the Thermal Characteristics Table to ΘJA = 28.51°C/W
and ΘJC = 5.91°C/W
Replaced TBDs in the Capacitance Table for the 165 FBGA Package
Changed the package diagram from BB165E (15 x 17 x 1.4 mm) to BB165D
(13 x 15 x 1.4 mm)
Added Pb-Free Product Information
Updated the Ordering Information by Shading and Unshading MPNs as per
availability
*B
413997
See ECN
NXR
Converted from Preliminary to Final
Added CY7C1910BV18 part number to the title
Removed 300MHz Speed Bin
Changed address of Cypress Semiconductor Corporation on Page# 1 from
“3901 North First Street” to “198 Champion Court”
Changed C/C Pin Description in the features section and Pin Description
Corrected Typo in Identification Register Definitions for CY7C1910BV18 on
page# 16
Added power up sequence details and waveforms
Added foot notes #15, 16, and 17 on page# 18
Replaced Three state with Tri-state
Changed the description of IX from Input Load Current to Input Leakage Current
on page# 13
Modified the IDD and ISB values
Modified test condition in Footnote #20 on page# 19 from VDDQ < VDD to
VDDQ < VDD
Replaced Package Name column with Package Diagram in the Ordering
Information table
Updated Ordering Information Table
*C
423334
See ECN
NXR
Changed the IEEE Standard # 1149.1-1900 to 1149.1-2001
Changed the Minimum Value of tSC and tHC from 0.5ns to 0.35ns for 250 MHz
and 0.6 ns to 0.4 ns for 200 MHz speed bins
Changed the description of tSA from K Clock Rise to Clock (K/K) Rise
Changed the description of tSC and tHC from Clock (K and K) Rise to K Clock Rise
*D
472384
See ECN
NXR
Modified the ZQ Definition from Alternately, this pin is connected directly to VDD
to Alternately, this pin is connected directly to VDDQ
Changed the IEEE Standard # from 1149.1-2001 to 1149.1-1900
Included Maximum Ratings for Supply Voltage on VDDQ Relative to GND
Changed the Maximum Ratings for DC Input Voltage from VDDQ to VDD
Changed tTH and tTL from 40 ns to 20 ns, changed tTMSS, tTDIS, tCS, tTMSH, tTDIH,
tCH from 10 ns to 5 ns and changed tTDOV from 20 ns to 10 ns in Tap Switching
Characteristics.
Modified Power Up waveform
Changed the Maximum rating of Ambient Temperature with Power Applied from
–10°C to +85°C to –55°C to +125°C
Added additional notes in the AC parameter section
Modified AC Switching Waveform
Corrected the typo In the Tap Switching Characteristics.
Updated the Ordering Information Table
Document #: 38-05619 Rev. *E
Page 27 of 28
CY7C1310BV18
CY7C1910BV18
CY7C1312BV18
CY7C1314BV18
Document Title: CY7C1310BV18/CY7C1910BV18/CY7C1312BV18/CY7C1314BV18, 18-Mbit QDR™-II SRAM 2 Word Burst
Architecture
Document Number: 38-05619
*E
1274723
See ECN
VKN
Corrected typo in the JTAG ID code for CY7C1910BV18
© Cypress Semiconductor Corporation, 2004-2007. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use
of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used
for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use
as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support
systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
Any Source Code (software and/or firmware) is owned by Cypress Semiconductor Corporation (Cypress) and is protected by and subject to worldwide patent protection (United States and foreign),
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Disclaimer: CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES
OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Cypress reserves the right to make changes without further notice to the materials described herein. Cypress does not
assume any liability arising out of the application or use of any product or circuit described herein. Cypress does not authorize its products for use as critical components in life-support systems where
a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress’ product in a life-support systems application implies that the manufacturer
assumes all risk of such use and in doing so indemnifies Cypress against all charges.
Use may be limited by and subject to the applicable Cypress software license agreement.
Document #: 38-05619 Rev. *E
Revised July 15, 2007
Page 28 of 28
QDR RAMs and Quad Data Rate RAMs comprise a new family of products developed by Cypress, IDT, NEC, Renesas, and Samsung. All product and company names mentioned in this document
are the trademarks of their respective holders.