CYT3019D SURFACE MOUNT DUAL, ISOLATED NPN SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CYT3019D type consists of two (2) isolated NPN silicon transistors packaged in an epoxy molded SOT-228 surface mount case. This SUPERmini™ device is manufactured by the epitaxial planar process. MARKING: FULL PART NUMBER SOT-228 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL SYMBOL ICBO IEBO BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) hFE hFE hFE hFE hFE fT Cob Cib NF SYMBOL VCBO VCEO VEBO IC ICM PD TJ, Tstg ΘJA UNITS V V V A A W °C °C/W 140 80 7.0 1.0 1.5 2.0 -65 to +150 62.5 CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted) TEST CONDITIONS MIN MAX VCB=90V 10 VEB=5.0V 10 IC=100μA 140 IC=30mA 80 IE=100μA 7.0 IC=150mA, IB=15mA 0.20 IC=500mA, IB=50mA 0.50 IC=150mA, IB=15mA 1.10 VCE=10V, IC=0.1mA 50 VCE=10V, IC=10mA 90 VCE=10V, IC=150mA 100 300 VCE=10V, IC=500mA 50 VCE=10V, IC=1.0A 15 VCE=10V, IC=50mA, f=20MHz 100 400 VCB=10V, IE=0, f=1.0MHz 12 VEB=0.5V, IC=0, f=1.0MHz 60 VCE=10V, IC=100μA, RS=1.0kΩ, f=1.0kHz 4.0 UNITS nA nA V V V V V V MHz pF pF dB R2 (9-November 2010) CYT3019D SURFACE MOUNT DUAL, ISOLATED NPN SILICON TRANSISTORS SOT-228 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Collector Q1 2) Collector Q1 3) Collector Q2 4) Collector Q2 5) 6) 7) 8) Emitter Q2 Base Q2 Emitter Q1 Base Q1 MARKING: FULL PART NUMBER R2 (9-November 2010) w w w. c e n t r a l s e m i . c o m