Comchip CZRA3036 Surface mount zener diode Datasheet

Surface Mount Zener Diode
COMCHIP
www.comchip.com.tw
CZRA3011 Thru CZRA3100
Voltage: 11 - 100 Volts
Power: 3.0 Watt
Features
- For surf ace mounted applications in order to
optimize board space
- Low profile package
- Built-in strain relief
- Glass passivated junction
- Low inductance
- Excellent clamping capability
- Typical ID less than 1uA above 11V
DO-214AC (SMA)
0.067(1.70)
0.051(1.29)
0.180(4.57)
0.160(4.06)
- High temperature soldering 260°C /10
seconds at terminals
- Plastic package has underwriters laboratory
flammability classification 94V-O
0.012(0.31)
0.006(0.15)
0.091(2.31)
0.067(1.70)
Mechanical data
- Case: JEDEC DO-214AC, Molded plastic
over passivated junction
- Terminals: Solder plated, solderable per MILSTD-750, method 2026
- Polarity: Color band denotes positive end
(cathode) except Bidirectional
- Standard Packaging: 12mm tape (EIA-481)
- Weight: 0.002 ounce, 0.064 gram
0.110(2.79)
0.086(2.18)
0.059(1.50)
0.035(0.89)
0.209(5.31)
0.185(4.70)
0.008(0.20)
0.004(0.10)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characterics
Ratings at 25°C ambient temperature unless otherwise specified.
Rating
Peak Pulse Power Dissipation (Note A)
Derate above 75
Peak forward Surge Current 8.3ms single half s ine-wave superimposed
on rated load (JEDEC Method) (Note B)
Operating Junction and Storage Temperature Range
MDS0211015A
Symbol
Value
3
24
Units
Watts
mW/°C
IFSM
15
Amps
TJ,TSTG
-55 to +150
°C
PD
Page 1
Surface Mount Zener Diode
COMCHIP
www.comchip.com.tw
ELECTRICAL CHARACTERISTICS
(TA=25°C unless otherwise noted) (VF=1.2Volts Max, IF=500mA for all types.)
Device
(Note 1.)
Nominal
Zener
Voltage VZ
@ IZT
(Note 2.)
Test
current
IZT
(Volts)
11
12
13
14
15
16
17
18
19
20
22
24
27
28
30
33
36
39
43
47
51
56
62
68
75
82
91
100
CZRA3011
CZRA3012
CZRA3013
CZRA3014
CZRA3015
CZRA3016
CZRA3017
CZRA3018
CZRA3019
CZRA3020
CZRA3022
CZRA3024
CZRA3027
CZRA3028
CZRA3030
CZRA3033
CZRA3036
CZRA3039
CZRA3043
CZRA3047
CZRA3051
CZRA3056
CZRA3062
CZRA3068
CZRA3075
CZRA3082
CZRA3091
CZRA3100
Maximum Zener Impedance
(Note 3.)
Leakage Current
ZZT @ IZT
ZZK @ IZK
(mA)
(Ohms)
(Ohms)
(mA)
(uA)
(Volts)
Madc
Ir - mA
68
63
58
53
50
47
44
42
40
37
34
31
28
27
25
23
21
19
17
16
15
13
12
11
10
9.1
8.2
7.5
4
4.5
4.5
5
5.5
5.5
6
6
7
7
8
9
10
12
16
20
22
28
33
38
45
50
55
70
85
95
115
160
700
700
700
700
700
700
750
750
750
750
750
750
750
750
1000
1000
1000
1000
1500
1500
1500
2000
2000
2000
2000
3000
3000
3000
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
1
1
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
8.4
9.1
9.9
10.6
11.4
12.2
13
13.7
14.4
15.2
16.7
18.2
20.6
21
22.5
25.1
27.4
29.7
32.7
35.6
38.8
42.6
47.1
51.7
56
62.2
69.2
76
225
246
208
193
180
169
150
159
142
135
123
112
100
96
90
82
75
69
63
57
53
48
44
40
36
33
30
27
1.82
1.66
1.54
1.43
1.33
1.25
1.18
1.11
1.05
1.00
0.91
0.83
0.74
0.71
0.67
0.61
0.56
0.51
0.45
0.42
0.39
0.36
0.32
0.29
0.27
0.24
0.22
0.20
IZK
IR
Surge
Maximum
Current
Zener
@TA=25°C
Current IZM
(Note 4.)
VR
NOTE:
1. Tolerance and Type Number Designation. The type numbers listed have a standard tolerance on the nominal zener voltage of ±5%.
2. ZENER VOLTAGE (Vz) MEASUREMENT - guarantees the zener voltage when m easured at 40 ms +- 10ms
from the diode body, and an ambient temperat ure of 25 °C (+8°C , -2°C ).
3.ZENER IMPEDANCE (Zz) DERIVATION - The zener im pedance is derived from the 60 cycle ac voltage,
which results when an ac current having an rms falue equal to 10% of the dc zener current (I ZT or IZK) is
superimposed on I ZT or IZK.
4. SURGE CURRENT (Ir) NON-REPETITIVE - The rating li sted in the electrical characteris tics table is
maximum peak, non-repetitive, reverse surge c urrent of 1/2 square wave or equivalent sine wave pulse
of 1/120 second duration superimposed on the tes t current, I ZT, per JEDEC standards, however, actual
device capability is as described in Figure 3.
MDS0211015A
Page 2
Surface Mount Zener Diode
COMCHIP
www.comchip.com.tw
Rating and Characteristic Curves (CZRA3011 Thru CZRA3100)
TRANSIENT THERMAL
RESISTANCE
JUNCTION-TO-LEAD(°C /W )
30
D = 0.5
20
10
0.2
7
5
0.1
3
0.05
2
NOTE BELOW 0.1 SECOND,
THERMAL RESPONSE
CURVE IS APPLICABLE TO
ANY LEAD LENGTH (L)
0.02
1
0.7
0.5
0.01
0.3
0.0001
D=0
0.0002
0.0005
0.001
0.002
0.005
0.01
0.02
0.05
SINGLE PULSE
T JL = J L(t)PPK
REPETIT IVE PULSES TJ L =
JL( t,D)PPK
0.1
0.2
0.5
1
2
5
10
IR, REVERSE LEADAGE(uAdc)
@VR AS SPECIFIED IN ELEC.
CHAR. TABLE
1K
500
RECTANGULAR NONREPETITIVE
WAVEFORM TJ = 25°C PRIOR TO
INITIAL PULSE
300
200
100
50
30
20
10
.1
.2 .3
5
1
2 3 5
10
20
50
100
0.1
0.05
0.03
0.02
0.01
0.005
0.003
0.002
0.001
0.0005
0.0003
0.0002
0.0001
1
2
5
10
20
50
100
200
500
1K
P.W. PULSE WIDTH (ms)
NOMINAL VZ (VOLTS)
Fig. 3-MAXIMUM SURGE POWER
Fig. 4-TYPICAL REVERSE LEAKAGE
8
6
4
2
RANGE
0
-2
-4
3
4
6
8
10
12
TEMPERATURE
COEFFICIENT(mV/°C) @ IZT
TEMPERATURE
COEFFICIENT(mV/°C ) @ IZT
PPK, PEAK SURGE POWER(WATTS)
Fig. 2-TYPICAL THERMAL RESPONSE L,
200
100
RANGE
50
40
30
20
10
0
20
40
60
80
100
VZ, ZENER VOLTAGE @IZT (VOLTS)
VZ, ZENER VOLTAGE @IZT (VOLTS)
Fig. 5 - UNITS TO 12 VOLTS
MDS0211015A
Fig. 6 - UNITS 10 TO 100 VOLTS
Page 3
Surface Mount Zener Diode
COMCHIP
www.comchip.com.tw
Rating and Characteristic Curves (CZRA3011 Thru CZRA3100)
100
IZ, ZENER CURRENT (mA)
100
50
30
20
10
5
3
2
1
0.5
0.3
0.2
0.1
0
1
2 3
4
5
6 7
8
50
30
20
10
5
3
2
1
0.5
0.3
0.2
0.1
0
9 10
10
20 30 40 50 60
70 80 90
100
VZ, ZENER VOLTAGE (VOLTS)
JUNCTION-LEAD THERMAL
RESISTANCE (°C/W )
VZ, ZENER VOLTAGE (VOLTS)
80
70
60
PRIMARY PATH OF
CONDUCTION IS THROUGH
THE CATHODE LEAD
50
40
30
20
10
0
0
1/8
1/4
3/8
1/2
5/8
3/4
7/8
1
L, LEAD LENGTH TO HEAT SINK (INCH)
Fig. 9 -TYPICAL THERMAL RESISTANCE
MDS0211015A
Page 4
Surface Mount Zener Diode
COMCHIP
www.comchip.com.tw
APPLICATION NOTE:
Since the actual voltage available from a given zener
diode is temperature dependent, it is necessary to
determine junction temperature under any set of
operating conditions in order to calculate its value. The
following procedure is recommended:
Lead Temperature, T L, should be determined from:
TL = θLAPD + TA
θLA is the lead-to-ambient thermal resistance (°C/W)
and PD is the power dissipation. The value for θLA will
vary and depends on the device mounting method.
θLA is generally 30-40 °C/W for the various chips and
tie points in common use and for printed circuit board
wiring.
The temperature of the lead can also be measured using
a thermocouple placed on the lead as close as possible to
the tie point. The thermal mass connected to the tie point
is normally large enough so that it will not significantly
respond to heat surges generated in the diode as a result
of pulsed operation once steady-state conditions are
achieved. Using the measured value of TL, the junction
temperature may be determined by:
TJ = TL + ∆TJL
MDS0211015A
∆TJL is the increase in junction temperature above the
lead temperature and may be found from Figure 2 for a
train of power pulses or from Figure 10 for dc power.
∆TJL = θLAPD
For worst-case design, using expected limits of Iz, limits
of PD and the extremes of TJ (∆TJL ) may be estimated.
Changes in voltage, Vz, can then be found from:
∆V = θVZ ∆TJ
θVZ , the zener voltage temperature coefficient, is
found from Figures 5 and 6.
Under high power-pulse operation, the zener voltage
will vary with time and may also be affected significantly
be the zener resistance. For best regulation, keep current
excursions as low as possible.
Data of Figure 2 should not be used to compute surge
capability. Surge limitations are given in Figure 3. They
are lower than would be expected by considering only
junction temperature, as current crowding effects cause
temperatures to be extremely high in small spots resulting
in device degradation should the limits of Figure 3 be
exceeded.
Page 5
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