Comchip CZRB2016 Surface mount zener diode Datasheet

Surface Mount Zener Diode
COMCHIP
www.comchip.com.tw
CZRB2011 Thru CZRB2100
Voltage: 11 - 100 Volts
Power: 2.0 Watt
Features
- For surf ace mounted applications in order to
optimize board space
- Low profile package
- Built-in strain relief
- Glass passivated junction
- Low inductance
- Excellent clamping capability
- Typical ID less than 1uA above 11V
- High temperature soldering 260°C /10
seconds at terminals
- Plastic package has underwriters laboratory
flammability classification 94V-O
Mechanical data
- Case: JEDEC DO-214AA, Molded plastic
over passivated junction
- Terminals: Solder plated, solderable per MILSTD-750, method 2026
- Polarity: Color band denotes positive end
(cathode) except Bidirectional
- Standard Packaging: 12mm tape (EIA-481)
- Weight: 0.002 ounce, 0.064 gram
SMB/DO-214AA
0.083(2.11)
0.075(1.91)
0.155(3.94)
0.130(3.30)
0.185(4.70)
0.160(4.06)
0.012(0.31)
0.006(0.15)
0.096(2.44)
0.083(2.13)
0.050(1.27)
0.030(0.76)
0.220(5.59)
0.200(5.08)
0.008(0.20)
0.203(0.10)
Dimensions in inches and (maillimeter)
Maximum Ratings and Electrical Characterics
Ratings at 25°C ambient temperature unless otherwise specified.
Rating
Peak Pulse Power Dissipation (Note A)
Derate above 75°C
Peak forward Surge Current 8.3ms single half s ine-wave superimposed
on rated load (JEDEC Method) (Note B)
Operating Junction and Storage Temperature Range
MDS0302004A
Symbol
Value
2
24
Units
Watts
mW/°C
IFSM
15
Amps
TJ,TSTG
-55 to +150
°C
PD
Page 1
Surface Mount Zener Diode
COMCHIP
www.comchip.com.tw
Rating and Characteristic Curevs (CZRB2011 Thru CZRB2100)
ELECTRICAL CHARACTERISTICS
(TA=25°C unless otherwise noted) (VF=1.2Volts Max, IF=500mA for all types.)
Device
(Note 1.)
Nominal
Zener
Voltage VZ
@ IZT
(Note 2.)
Test
current
IZT
(Volts)
11
12
13
14
15
16
17
18
19
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
CZRB2011
CZRB2012
CZRB2013
CZRB2014
CZRB2015
CZRB2016
CZRB2017
CZRB2018
CZRB2019
CZRB2020
CZRB2022
CZRB2024
CZRB2027
CZRB2030
CZRB2033
CZRB2036
CZRB2039
CZRB2043
CZRB2047
CZRB2051
CZRB2056
CZRB2062
CZRB2068
CZRB2075
CZRB2082
CZRB2091
CZRB2100
Maximum Zener Impedance
(Note 3.)
Leakage Current
ZZT @ IZT
ZZK @ IZK
(mA)
(Ohms)
(Ohms)
(mA)
(uA)
(Volts)
(mA)
Ir - mA
45.5
41.5
38.5
35.7
33.4
31.2
29.4
27.8
26.3
25
22.8
20.8
18.5
16.6
15.1
13.9
12.8
11.6
10.6
9.8
9
8.1
7.4
6.7
6.1
5.5
5
4
4.5
5
5.5
7
8
9
10
11
11
12
13
18
20
23
25
30
35
40
48
55
60
75
90
100
125
175
700
700
700
700
700
700
750
750
750
750
750
750
750
1000
1000
1000
1000
1500
1500
1500
2000
2000
2000
2000
3000
3000
3000
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
1.0
1.0
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
8.4
9.1
9.9
10.6
11.4
12.2
13
13.7
14.4
15.2
16.7
18.2
20.6
22.5
25.1
27.4
29.7
32.7
35.6
38.8
42.6
47.1
51.7
56
62.2
69.2
76
166
152
138
130
122
114
107
100
95
90
82
76
68
60
55
50
47
43
39
36
32
29
27
24
22
20
18
1.82
1.66
1.54
1.43
1.33
1.25
1.18
1.11
1.05
1.00
0.91
0.83
0.74
0.67
0.61
0.56
0.51
0.45
0.42
0.39
0.36
0.32
0.29
0.27
0.24
0.22
0.20
IZK
IR
Surge
Maximum
Current
Zener
@TA=25°C
Current IZM
(Note 4.)
VR
NOTE:
1. TOLERANCES - Suffix indicates 5% tol erance any other tolerance will be considered as a special devic e.
2. ZENER VOLTAGE (Vz) MEASUREMENT - guarantees the zener voltage when m easured at 40 ms ± 10ms
from the diode body, and an ambient temperat ure of 25 °C (+ 8 °C , -2 °C ).
3.ZENER IMPEDANCE (Zz) DERIVATION - The zener im pedance is derived from the 60 cycle ac voltage,
which results when an ac current having an rms falue equal to 10% of the dc zener current (I ZT or IZK) is
superimposed on I ZT or IZK.
4. SURGE CURRENT (Ir) NON-REPETITIVE - The rating li sted in the electrical characteris tics table is
maximum peak, non-repetitive, reverse surge c urrent of 1/2 square wave or equivalent sine wave pulse
of 1/120 second duration superimposed on the tes t current, I ZT, per JEDEC standards, however, actual
device capability is as described in Figure 3.
MDS0302004A
Page 2
Surface Mount Zener Diode
COMCHIP
www.comchip.com.tw
Rating and Characteristic Curves (CZRB2011 Thru CZRB2100)
30
D = 0.5
TRANSIENT THERMAL
RESISTANCE
JUNCTION-TO-LEAD(°C/W)
20
10
0.2
7
5
0.1
3
2
0.05
1
0.02
0.7
0.5
0.01
0.3
0.0001 0.0002
NOTE BELOW 0.1 SECOND,
THERMAL RESPONSE
CURVE IS APPLICABLE TO
ANY LEAD LENGTH (L)
D=0
0.0005
0.001
0.002
0.005
0.01
0.02
0.05
SINGLE PULSE
TJL = JL(t)PPK
JL(t,D)PPK
REPETITIVE PULSES TJL =
0.1
0.2
0.5
1
2
5
10
Fig. 2-TYPICAL THERMAL RESPONSE L,
300
IR, REVERSE LEADAGE(uAdc)
@VR AS SPECIFIED IN ELEC.
CHAR. TABLE
500
RECTANGULAR NONREPETITIVE
WAVEFORM TJ = 25°C PRIOR TO
INITIAL PULSE
200
100
50
30
20
10
.1
.2 .3
5
1
2 3 5
10
20
50
100
0.1
0.05
0.03
0.02
0.01
0.005
0.003
0.002
0.001
0.0005
0.0003
0.0002
0.0001
1
2
5
10
20
50
100
200
500
1K
P.W. PULSE WIDTH (ms)
NOMINAL VZ (VOLTS)
Fig. 3-MAXIMUM SURGE POWER
Fig. 4-TYPICAL REVERSE LEAKAGE
8
6
4
2
0
RANGE
-2
-4
3
4
6
8
10
12
VZ, ZENER VOLTAGE @IZT (VOLTS)
TEMPERATURE
COEFFICIENT(mV/°C) @ IZT
TEMPERATURE
COEFFICIENT(mV/°C ) @ IZT
PPK, PEAK SURGE POWER(WATTS)
1K
200
100
RANGE
50
40
30
20
10
0
20
40
60
80
100
VZ, ZENER VOLTAGE @IZT (VOLTS)
Fig. 5 - UNITS TO 12 VOLTS
MDS0302004A
Fig. 6 - UNITS 10 TO 100 VOLTS
Page 3
Surface Mount Zener Diode
COMCHIP
www.comchip.com.tw
Rating and Characteristic Curves (CZRB2011 Thru CZRB2100)
100
IZ, ZENER CURRENT (mA)
100
50
30
20
10
5
3
2
1
0.5
0.3
0.2
0.1
0
1
2 3
4
5
6 7
8
50
30
20
10
5
3
2
1
0.5
0.3
0.2
0.1
0
9 10
10
20 30 40 50 60
70 80 90
100
VZ, ZENER VOLTAGE (VOLTS)
JUNCTION-LEAD THERMAL
RESISTANCE (°C/W)
VZ, ZENER VOLTAGE (VOLTS)
80
70
60
PRIMARY PATH OF
CONDUCTION IS THROUGH
THE CATHODE LEAD
50
40
30
20
10
0
0
1/8
1/4
3/8
1/2
5/8
3/4
7/8
1
L, LEAD LENGTH TO HEAT SINK (INCH)
Fig. 9 -TYPICAL THERMAL RESISTANCE
MDS0302004A
Page 4
Surface Mount Zener Diode
COMCHIP
www.comchip.com.tw
APPLICATION NOTE:
Since the actual voltage available from a given zener
diode is temperature dependent, it is necessary to
determine junction temperature under any set of
operating conditions in order to calculate its value. The
following procedure is recommended:
Lead Temperature, T L, should be determined from:
TL = șLAPD + TA
șLA is the lead-to-ambient thermal resistance (°C/W)
and PD is the power dissipation. The value for șLA will
vary and depends on the device mounting method.
șLA is generally 30-40 °C/W for the various chips and
tie points in common use and for printed circuit board
wiring.
The temperature of the lead can also be measured using
a thermocouple placed on the lead as close as possible to
the tie point. The thermal mass connected to the tie point
is normally large enough so that it will not significantly
respond to heat surges generated in the diode as a result
of pulsed operation once steady-state conditions are
achieved. Using the measured value of TL, the junction
temperature may be determined by:
TJ = TL + ¨TJL
MDS0302004A
¨TJL is the increase in junction temperature above the
lead temperature and may be found from Figure 2 for a
train of power pulses or from Figure 10 for dc power.
¨TJL = șLAPD
For worst-case design, using expected limits of Iz, limits
of PD and the extremes of TJ (¨TJL ) may be estimated.
Changes in voltage, Vz, can then be found from:
¨V = șVZ ¨TJ
șVZ , the zener voltage temperature coefficient, is
found from Figures 5 and 6.
Under high power-pulse operation, the zener voltage
will vary with time and may also be affected significantly
be the zener resistance. For best regulation, keep current
excursions as low as possible.
Data of Figure 2 should not be used to compute surge
capability. Surge limitations are given in Figure 3. They
are lower than would be expected by considering only
junction temperature, as current crowding effects cause
temperatures to be extremely high in small spots resulting
in device degradation should the limits of Figure 3 be
exceeded.
Page 5
Similar pages