Thinki D10SC6MR 10 ampere,60 volt dual common anode schottky barrier half bridge rectifier Datasheet

D10SC6MR
Pb Free Plating Product
®
Pb
D10SC6MR
10 Ampere,60 Volt Dual Common Anode Schottky Barrier Half Bridge Rectifier
ITO-220AB
Features
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Unit:mm
Application
Switching power supply
DC/DC converter
Home Appliances, Office Equipment
Telecommunication
Mechanical Data
Case: Fully Isolated Molding TO-220F
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 2.1 gram approximately
TO-220F FullPak
Case
Case
Negative
Positive
Common Cathode Common Anode
Suffix "MR"
Suffix "M"
Case
Doubler
Tandem Polarity
Suffix "MD"
Case
Reverse Doubler
Tandem Polarity
Suffix "MS"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
●Absolute Maximum Ratings (If not specified Tc=25℃)
Item
Symbol
Conditions
Storage Temperature
Tstg
Operating Junction Temperature
Tj
VRM
Maximum Reverse Voltage
Repetitive Peak Surge Reverse Voltage
VRRSM Pulse width 0.5ms, duty 1/40
Average Rectified Forward Current
IO
50Hz sine wave, R-load, Rating for each diode Io/2, Tc=120℃
IFSM 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=125℃
Peak Surge Forward Current
Repetitive Peak Surge Reverse Power
PRRSM Pulse width 10μs, Rating of per diode, Tj= 25℃
Dielectric Strength
Vdis Terminals to case, AC 1 minute
Mounting Torque
TOR (Recommended torque:0.3N・m)
Ratings
-40〜150
150
60
65
10
100
330
1.5
0.5
Unit
℃
℃
V
V
A
A
W
kV
N・m
●Electrical Characteristics Tc=25℃
Item
Symbol
Forward Voltage
VF
IR
Reverse Current
Junction Capacitance
Cj
Thermal Resistance
θjc
θcf
Ratings
Max.0.58
Max.4.5
Typ.200
Max.3.3
Max.1.5
Unit
V
mA
pF
℃/W
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
Conditions
IF=5A,
Pulse measurement, Rating of per diode
VR=V RM, Pulse measurement, Rating of per diode
f=1MHz, V R=10V, Rating of per diode
junction to case
case to heatsink, Mounting torque=0.5N・m
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