Seme LAB D2005 Metal gate rf silicon fet Datasheet

TetraFET
D2005UK
METAL GATE RF SILICON FET
MECHANICAL DATA
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
7.5W – 28V – 1GHz
SINGLE ENDED
C
2
N
(typ)
1
B
A
3
D
(2 pls)
F
(2 pls)
H
J
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
M
E
I
K
G
• SUITABLE FOR BROAD BAND APPLICATIONS
DP
PIN 1
SOURCE
PIN 3
GATE
PIN 2
DRAIN
• LOW Crss
• SIMPLE BIAS CIRCUITS
DIM
mm
A
16.51
B
6.35
C
45°
D
3.30
E
18.92
F
1.52
G
2.16
H
14.22
I
1.52
J
6.35
K
0.13
M
5.08
N 1.27 x 45°
Tol.
0.25
0.13
5°
0.13
0.08
0.13
0.13
0.08
0.13
0.13
0.03
0.51
0.13
Inches
0.650
0.250
45°
0.130
0.745
0.060
0.085
0.560
0.060
0.250
0.005
0.200
0.050 x 45°
Tol.
0.010
0.005
5°
0.005
0.003
0.005
0.005
0.003
0.005
0.005
0.001
0.020
0.005
• LOW NOISE
• HIGH GAIN – 13 dB MINIMUM
APPLICATIONS
• VHF/UHF COMMUNICATIONS
from DC to 2 GHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD
BVDSS
BVGSS
ID(sat)
Tstg
Tj
Semelab plc.
Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
35W
65V
±20V
3A
–65 to 150°C
200°C
Prelim. 12/00
D2005UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
BVDSS
Drain–Source
Typ.
Max. Unit
V
VGS = 0
ID = 10mA
VDS = 28V
VGS = 0
2
mA
VGS = 20V
VDS = 0
1
µA
VGS(th) Gate Threshold Voltage*
ID = 10mA
VDS = VGS
7
V
gfs
Forward Transconductance*
VDS = 10V
ID = 0.4A
GPS
Common Source Power Gain
PO = 7.5W
η
Drain Efficiency
VDS = 28V
IDSS
IGSS
Breakdown Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
VSWR Load Mismatch Tolerance
IDQ = 0.3A
f = 1GHz
65
1
0.54
S
13
dB
40
%
20:1
—
Ciss
Input Capacitance
VDS = 0
VGS = –5V f = 1MHz
36
pF
Coss
Output Capacitance
VDS = 28V
VGS = 0
f = 1MHz
18
pF
Crss
Reverse Transfer Capacitance
VDS = 28V
VGS = 0
f = 1MHz
1.5
pF
* Pulse Test:
Pulse Duration = 300 µs , Duty Cycle ≤ 2%
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
RTHj–case
Semelab plc.
Thermal Resistance Junction – Case
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
Max. 5°C / W
Prelim. 12/00
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