Seme LAB D2019 Metal gate rf silicon fet Datasheet

TetraFET
D2019UK
METAL GATE RF SILICON FET
MECHANICAL DATA
A
D
N
8
1
7
2
6
3
5
4
C
B
P
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
2.5W – 28V – 1GHz
SINGLE ENDED
H
K
FEATURES
M
L
J
• SIMPLIFIED AMPLIFIER DESIGN
E
F
G
• SUITABLE FOR BROAD BAND APPLICATIONS
SO8 PACKAGE
PIN 1 – SOURCE
PIN 2 – DRAIN
PIN 3 – DRAIN
PIN 4 – SOURCE
PIN 5 – SOURCE
PIN 6 – GATE
PIN 7 – GATE
PIN 8 – SOURCE
Dim.
A
B
C
D
E
F
G
mm
4.06
5.08
1.27
0.51
3.56
4.06
1.65
H
0.76
J
K
L
M
N
P
0.51
1.02
45°
0°
7°
0.20
2.18
4.57
Tol.
±0.08
±0.08
±0.08
±0.08
±0.08
±0.08
±0.08
+0.25
-0.00
Min.
Max.
Max.
Min.
Max.
±0.08
Max.
±0.08
Inches
0.160
0.200
0.050
0.020
0.140
0.160
0.065
0.030
0.020
0.040
45°
0°
7°
0.008
0.086
0.180
Tol.
±0.003
±0.003
±0.003
±0.003
±0.003
±0.003
±0.003
+0.010
-0.000
Min.
Max.
Max.
Min.
Max.
±0.003
Max.
±0.003
• VERY LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 13 dB MINIMUM
APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 2 GHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD
BVDSS
BVGSS
ID(sat)
Tstg
Tj
Semelab plc.
Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
17.5W
65V
±20V
1A
–65 to 150°C
200°C
Prelim. 9/95
D2019UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
BVDSS
Drain–Source
Typ.
Max. Unit
VGS = 0
ID = 10mA
VDS = 28V
VGS = 0
1
mA
VGS = 20V
VDS = 0
1
µA
VGS(th) Gate Threshold Voltage*
ID = 10mA
VDS = VGS
5
V
gfs
Forward Transconductance*
VDS = 10V
ID = 0.2A
GPS
Common Source Power Gain
PO = 2.5W
η
Drain Efficiency
VDS = 28V
IDSS
IGSS
Breakdown Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
VSWR Load Mismatch Tolerance
IDQ = 0.1A
f = 1GHz
65
1
V
0.18
S
13
dB
40
%
20:1
—
Ciss
Input Capacitance
VDS = 0V
VGS = –5V f = 1MHz
12
pF
Coss
Output Capacitance
VDS = 28V
VGS = 0
f = 1MHz
6
pF
Crss
Reverse Transfer Capacitance
VDS = 28V
VGS = 0
f = 1MHz
0.5
pF
* Pulse Test:
Pulse Duration = 300 µs , Duty Cycle ≤ 2%
THERMAL DATA
RTHj–case
Semelab plc.
Thermal Resistance Junction – Case
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Max. 10°C / W
Prelim. 9/95
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