NJSEMI D40C4 30-50 volts .5 amp, 6.25 watt Datasheet

tSs-mi-donduckoi ^Pioaucta, One.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
D40C Series
30-50 VOLTS
.5 AMP, 6.25 WATTS
Designed for driver, regulator, touch switch, I.C. driver, audio
output, relay substitute, oscillator, servo-amplifier, and
capacitor multiplier applications.
NFN
COLLECTOR
Features:
• hFE Min. — 10,000 and 40,000
CASE STYLE TO-202
• 1.33 Watt power dissipation at TA = 25°
DIMENSIONS ARE IN INCHES AND (MILLIMETER*)
0.360-0.410
TYPE
TERM. 1
TERM 2
TE«M. 3
TAB
TO-202
EMIT^E*
BASE
COLLECTOR
COLLECTOR
maximum ratings (TA = 25° C) (unless otherwise specified)
RATING
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter Base Voltage
Collector Current — Continuous
Peak'1>
Base Current — Continuous
Total Power Dissipation @ T^ = 25° C
@T C = 25°C
Operating and Storage
Junction Temperature Range
SYMBOL
D40C1
VCEO
VCES
VEBO
30
13
.5
1.0
0.1
1.33
6.25
D40C4
40
40
13
.5
1.0
0.1
1.33
6.25
040C7
50
50
13
.5
1.0
0.1
1.33
6.25
UNITS
Volts
Volts
Volts
TJ, TSTG
-55 to +150
-5510+150
-55to+150
°C
R0JA
RffJC
75
20
75
20
75
20
"C/W
°C/W
TL
260
260
260
°C
'CM
IB
PD
30
A
A
Watts
thermal characteristics
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Maximum Lead Temperature tor Soldering
Purposes: W from Case for 5 Seconds
(1) Pulse Test: Pulse Width = 300ms. Duty Cycle < 2%.
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished b> NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Qurtllh/
electrical Characteristics (Tc= 25° C) (unless otherwise specified)
CHARACTERISTIC
SYMBOL
WIN
TYP
MAX
UNIT
off characteristics11*
Collector-Emitter Voltage
(lc = 10mA)
D40C1
D40C4
D40C7
VCEO
30
40
50
—
—
Collector Cut-off Current
(VCE = Rated VCES)
(Tc = 25° C)
(Tc = 1 50° C)
ICES
ICBO
—
—
0.5
20
IEBO
—
—
0.1
Emitter Cutoff Current
(V E B=13V)
Volts
"A
*A
second breakdown
FBSOA
| Second Breakdown with Base Forward Biased
SEE FIGURE 2
on characteristics
DC Current Gain
(lc = 200mA, VCE = 5V)
r»FE
Collector-Emitter Saturation Voltage
(lc = 500mA, IB = 0.5mA)
Base-Emitter Saturation Voltage
(lc = 500mA, IB = 0.5mA)
10K
—
60K
VCE(sat)
—
—
1.5
V
vBE(sat)
—
—
2.0
Volts
CCBO
—
—
220
pF
h
—
75
—
MHz
ns
dynamic characteristics
Collector Capacitance
(VCE = 10V, f =1MHz)
Current Gain - Bandwidth Product
(IC = 20mA, VCE = 5V)
switching characteristics
Resistive Load
Delay Time + Rise Time
lc = 1A, IBI = iB2 = 1mA
Storage Time
VCG = 30V, tp = 25 Msec
Fall Time
td + tr
—
100
—
t.
—
350
—
tf
—
800
—
(1) Pulse Test: PW < 300ms Duty Cycle < 2%.
IOOK
80K
6 OK
20K
I OK
8K
6K
PULSED MEASUREMENT
PULSE WIOTH • 2 MILLISEC
DUTY CYCLE S 2 %
c£ -5 VOLTS
IK
800
£00
040CI.4. ANO 7
°
200
2
4
6
K>
20
4
6O :00
IOC 800
8d
200
^OOIOOO
IC-COLLECTOR CURRENT-MILLIAMPERES
6
40
6
* tO
20
«0
60 80 100
VCE-COLLECTOR-TO-EMITTER VOLTAGE-VOLTS
FIG. 2 SAFE REGION OF OPERATION
FIG 1. TYPICAL hpE vs. lc
372
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