isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistors DESCRIPTION ·High DC Current Gain-hFE= 2000(Min)@ IC= 1A ·Complement to Type D45D1/2/3/4/5/6 APPLICATIONS ·Designed for use in power linear and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT D44D1 D44D2 VCEV Collector-Emitter Voltage D44D3 -60 D44D4 -80 D44D5 -100 D44D6 -120 V D44D1 D44D2 VCEO VEBO Collector-Emitter Voltage D44D3 -60 D44D4 -80 D44D5 -100 D44D6 -120 V Emitter-Base Voltage -5 V IC Collector Current-Continuous -12 A ICM Collector Current-Peak -20 A IB Base Current-Continuous -0.5 A PC Collector Power Dissipation@TC=25℃ 125 W TJ Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range isc Website：www.iscsemi.cn D44D1/2/3/4/5/6 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistors D44D1/2/3/4/5/6 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT D44D1 D44D2 VCEO(SUS) Collector-Emitter Sustaining Voltage D44D3 -60 IC= -30mA ;IB=0 V B D44D4 -80 D44D5 -100 D44D6 -120 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -5A; IB= -20mA -2.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A; IB= -100mA -3.0 V VBE(on) Base-Emitter On Voltage IC= -5A ; VCE= -4V -2.5 V VECF-1 C-E Diode Forward Voltage IF= -5A -2.0 V ICEO Collector Cutoff Current VCE= 1/2VCEOmax; IB= 0 -0.2 mA ICBO Collector Cutoff Current VCB= VCBOmax;IE= 0 1 VCB= /2VCBOmax;IE= 0;TC= 150℃ -0.4 -2.0 mA IEBO Emitter Cutoff Current VEB= -5V; IC=0 -5 mA hFE DC Current Gain IC= -1A ; VCE= -2V isc Website：www.iscsemi.cn B 2 2000