TetraFET D5050UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 2 1 D 4 E 3 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 300W – 50V – 30MHz SINGLE ENDED M F FEATURES G • SIMPLIFIED AMPLIFIER DESIGN H I K J • SUITABLE FOR BROAD BAND APPLICATIONS DMX • LOW Crss PIN 1 SOURCE PIN 2 DRAIN PIN 3 SOURCE PIN 4 GATE • SIMPLE BIAS CIRCUITS • LOW NOISE DIM mm A 28.83 B 21.97 C 45° D 6.86 E 3.43 Dia. F 5.84 G 13.97 Dia. H 6.60 I 0.13 J 3.81 K 2.54 M 27.94 Tol. 0.13 0.13 5° 0.13 0.13 0.13 0.13 REF 0.02 0.25 0.13 0.51 Inches 1.135 0.865 45° 0.27 0.135 Dia. 0.230 0.550 Dia. 0.260 0.005 0.15 0.100 1.10 Tol. 0.005 0.005 5° 0.005 0.005 0.005 0.005 REF 0.001 0.01 0.005 0.02 • HIGH GAIN – 20 dB MINIMUM APPLICATIONS • HF/VHF/UHF COMMUNICATIONS from 1 MHz to 175 MHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature 500W 125V ±20V 36A –65 to 150°C 200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 6071 Issue 1 D5050UK ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. BVDSS Drain–Source Typ. Max. Unit V VGS = 0 ID = 100mA VDS = 50V VGS = 0 12 mA VGS = 20V VDS = 0 12 µA VGS(th) Gate Threshold Voltage* ID = 10mA VDS = VGS 7 V gfs Forward Transconductance* VDS = 10V ID = 6A GPS Common Source Power Gain PO = 300W η Drain Efficiency VDS = 50V VSWR Load Mismatch Tolerance f = 30MHz IDSS IGSS Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current IDQ = 1.2A 125 1 9.6 S 20 dB 50 % 20:1 — Ciss Input Capacitance VDS = 50V VGS = –5V f = 1MHz 720 pF Coss Output Capacitance VDS = 50V VGS = 0 f = 1MHz 300 pF Crss Reverse Transfer Capacitance VDS = 50V VGS = 0 f = 1MHz 18 pF * Pulse Test: Pulse Duration = 300 µs , Duty Cycle ≤ 2% HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE. THERMAL DATA RTHj–case Thermal Resistance Junction – Case Max. 0.35°C / W Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 6071 Issue 1