Panasonic DB2J309 Silicon epitaxial planar type Datasheet

DB2J309
Silicon epitaxial planar type
Unit: mm
For high speed switching circuits
 Features
 Short reverse recovery time trr
 Small reverse current IR
 Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)
 Marking Symbol: C5
 Packaging
DB2J30900L Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard)
 Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
VR
30
V
Repetitive peak reverse voltage
VRRM
30
V
Forward current (Average)
IF(AV)
100
mA
Peak forward current
IFM
200
mA
Non-repetitive peak forward surge current *1
IFSM
1
A
Tj
125
°C
Operating ambient temperature
Topr
–40 to +85
°C
Storage temperature
Tstg
–55 to +125
°C
Reverse voltage
Junction temperature
1: Cathode
2: Anode
Panasonic
JEITA
Code
SMini2-F5-B
SC-90A

Note) *1: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
 Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
VF1
IF = 10 mA
0.44
VF2
IF = 100 mA
0.58
IR1
VR = 10 V
0.3
IR2
VR = 30 V
2.0
Terminal capacitance
Ct
VR = 10 V, f = 1 MHz
3.0
pF
Reverse recovery time *1
trr
IF = IR = 100 mA, Irr = 10 mA, RL = 100 W
1.3
ns
Forward voltage
Reverse current
V
mA
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. Absolute frequency of input and output is 250 MHz
*1: trr measurement circuit
Input Pulse
Bias Application Unit (N-50BU)
tp
tr
10%
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
Publication date: April 2013
VR
Ver. CED
t
IF
trr
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
Output Pulse
IF = 100 mA
IR = 100 mA
RL = 100 Ω
t
Irr = 10 mA
1
DB2J309
DB2J309_ IR-VR
DB2J309_ IF-VF
IF  VF
1
DB2J309_Ct-VR
IR  VR
Ct  VR
20
Pulse test
Ta = 25°C
Ta = 125°C
Reverse current IR (A)
Forward current IF (A)
10−1
Ta = 125°C
10−2
100°C
100°C
85°C
10−4
−40°C
10−9
25°C
85°C
25°C
10−7
10−3
Terminal capacitance Ct (pF)
10−5
15
10
5
−40°C
10−5
0
0.2
0.4
Forward voltage VF (V)
0.6
10−11
0
10
20
30
Reverse voltage VR (V)
Ver. CED
40
0
0
10
20
30
Reverse voltage VR (V)
2
DB2J309
SMini2-F5-B
Unit: mm
 Land Pattern (Reference) (Unit: mm)
Ver. CED
3
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semiconductors described in this book
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