Rectron DB3S Trigger diode Datasheet

DB3S
TRIGGER DIODES
FEATURES
* VBO: 32V/34V/40V VERSIONS
* Low Breakover Current
LL-34
DESCRIPTION
High reliability glass passivation insuring parameter stability
and protection against junction contamination
.059 (1.50)
.055 (1.40)
.020 (0.50)
.014 (0.35)
.138 (3.51)
.120 (3.30)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 o C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At T A = 25oC unless otherwise noted)
RATING
Repetitive Peak On-State Current tp=20uA,F=100Hz
Power Dissipation (@ T A=50 oC)
SYMBOL
VALUE
ITRM
2
A
150
mW
4.0
mW/ o C
P
Derate Above +50 oC
Storage Temperature Range
T STG
Junction Temperature
UNITS
-40 to + 125
o
C
125
o
C
TJ
o
ELECTRICAL CHARACTERISTICS (At TA = 25 C unless otherwise noted)
RATING
Breakover Voltage(Forward and Reverse)
at IBO,C=22nF**
VALUE
SYMBOL
VBO
DB3S-1
UNITS
DB3S-2
Min
Max
Min
Max
30
34
28
36
Volts
Volts
Maximum Breakover Voltage Symmetry delta V BO= +V BO - -VBO C=22nF
delta VBO
+/-2
Minimum Dynamic Breakover Voltage delta I=IBO to IF =10mA (see Fig3)
delta V+/-
5
Volts
Minimum Output Voltage* (see Fig 2)
VO
5
Volts
Peak Breakover Current at Breakorver Voltage* C=22nF**
IBO
100
25
Rise Time* (see Fig3)
tr
1.5
Leakage Current* VB=0.5VBO max (see Fig1)
IB
10
NOTES: 1. *Electrical characteristic applicable in both forward and reverse derections.
2.**Connected in parallel with the devices.
3. "Fully ROHS compliant", "100% Sn plating (Pb-free)".
uA
uS
uA
2007-1
RATING AND CHARACTERISTICS CURVES ( DB3S )
10k
+ IF
D.U.T
500k
220V
50Hz
Vo
0.1uF
R = 20
10mA
IBO
IB
-V
+V
0.5 VBO
FIG.2 Test circuit for output voltage
V
VBO
Ip
90 %
- IF
10 %
FIG.1 Current-voltage characteristics
tr
FIG.3 Test circuit see Fig.2
Adjust R for Ip=0.5A
RATING AND CHARACTERISTICS CURVES ( DB3S )
1.08
140
1.06
VBO (TJ)
VBO (TJ=25OC)
120
100
80
60
1.04
1.02
40
20
0
20
40
60
80
100
120
140 150
1.00
25
50
O
AMBIENT TEMPERATURE, ( C)
75
F=100Hz
TJ initial= 25 OC
1.0
0.1
10
125
FIG.5 RELATIVE VARIATION OF VBO VERSUS
JUNCTION TEMPERATURE (TYPICAL VALUES)
2.0
0.01
100
JUNCTION TEMPERATURE, (OC)
FIG.4 POWER DISSPATION VERSUS AMBIENT
TEMPERATURE (MAXIMUM VALUES)
ITRM, PEAK PULSE CURRENT (A)
POWER DISSIPATION, (mW)
160
100
1000
10000
tp, PULSE DURATION (uS)
FIG.6 PEAK PULSE CURRENT VERSUS
PULSE DURATION (MAXIMUM VALUES)
DISCLAIMER NOTICE
Rectron Inc reserves the right to make changes without notice to any product
specification herein, to make corrections, modifications, enhancements or other
changes. Rectron Inc or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information
contained are intended to provide a product description only. "Typical" parameters which may be included on RECTRON data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. Rectron Inc does not assume any liability arising out of the application or
use of any product or circuit.
Rectron products are not designed, intended or authorized for use in medical,
life-saving implant or other applications intended for life-sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of Rectron Inc. Customers using or selling Rectron components for use in
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