DCR1150N42 Phase Control Thyristor DS5967-2 April 2012 (LN 29433) FEATURES KEY PARAMETERS Double Side Cooling High Surge Capability VDRM IT(AV) ITSM dV/dt* dI/dt APPLICATIONS 4200V 1150A 16800A 1500V/µs 1000A/µs * Higher dV/dt selections available Medium Voltage Soft Starts High Voltage Power Supplies Static Switches VOLTAGE RATINGS Part and Ordering Number Repetitive Peak Voltages VDRM and VRRM V DCR1150N42 DCR1150N40 4200 4000 Conditions Tvj = -40°C to 125°C, IDRM = IRRM = 100mA, VDRM, VRRM tp = 10ms, VDSM & VRSM = VDRM & VRRM + 100V respectively Lower voltage grades available. Outline type code: N (See Package Details for further information) Fig. 1 Package outline ORDERING INFORMATION When ordering, select the required part number shown in the Voltage Ratings selection table. For example: DCR1150N42 Note: Please use the complete part number when ordering and quote this number in any future correspondence relating to your order. 1/10 www.dynexsemi.com DCR1150N42 SEMICONDUCTOR CURRENT RATINGS Tcase = 60°C unless stated otherwise Symbol Parameter Test Conditions Max. Units 1150 A Double Side Cooled IT(AV) Mean on-state current IT(RMS) RMS value - 1806 A Continuous (direct) on-state current - 1665 A IT Half wave resistive load SURGE RATINGS Symbol ITSM 2 It Parameter Surge (non-repetitive) on-state current Test Conditions Max. Units 10ms half sine, Tcase = 125°C 16.8 kA VR = 0 1.41 MA s Min. Max. Units 2 I t for fusing 2 THERMAL AND MECHANICAL RATINGS Symbol Rth(j-c) Rth(c-h) Parameter Thermal resistance – junction to case Thermal resistance – case to heatsink Test Conditions Double side cooled DC - 0.0221 °C/W Single side cooled Anode DC - 0.041 °C/W Cathode DC - 0.0516 °C/W Double side - 0.004 °C/W - 0.008 °C/W - 125 °C Clamping force 23 kN (with mounting compound) Blocking VDRM / VRRM Single side Tvj Virtual junction temperature Tstg Storage temperature range -55 125 °C Fm Clamping force 20.0 25.0 kN 2/10 www.dynexsemi.com DCR1150N42 SEMICONDUCTOR DYNAMIC CHARACTERISTICS Symbol IRRM/IDRM Parameter Test Conditions Min. Max. Units Peak reverse and off-state current At VRRM/VDRM, Tcase = 125°C - 100 mA dV/dt Max. linear rate of rise of off-state voltage To 67% VDRM, Tj = 125°C, gate open - 1500 V/µs dI/dt Rate of rise of on-state current From 67% VDRM to 2x IT(AV) Repetitive 50Hz - 250 A/µs Gate source 30V, 10, Non-repetitive - 1000 A/µs tr < 0.5µs, Tj = 125°C VT(TO) rT tgd Threshold voltage – Low level 300A to 850A at Tcase = 125°C - 0.86 V Threshold voltage – High level 850A to 4000A at Tcase = 125°C - 1.0 V On-state slope resistance – Low level 300A to 850A at Tcase = 125°C - 0.611 m On-state slope resistance – High level 850A to 4000A at Tcase = 125°C - 0.444 m VD = 67% VDRM, gate source 30V, 10 - 3 µs 800 µs 81 121 A 2000 3500 µC Delay time tr = 0.5µs, Tj = 25°C tq Turn-off time Tj = 125°C,I peak = 1000A, tp = 1000us, VRM = 100V, dI/dt = -5A/µs, dVDR/dt = 20V/µs linear to 2500V IRR Reverse recovery current QS Stored charge IL Latching current Tj = 25°C, VD = 5V - 3 A IH Holding current Tj = 25°C, RG-K = , ITM = 500A, IT = 5A - 300 mA IT = 1000A, tp = 1000us,Tj = 125°C, dI/dt = - 5A/µs, VR = 100V 3/10 www.dynexsemi.com DCR1150N42 SEMICONDUCTOR GATE TRIGGER CHARACTERISTICS AND RATINGS Symbol Parameter Test Conditions Max. Units VGT Gate trigger voltage VDRM = 5V, Tcase = 25°C 1.5 V VGD Gate non-trigger voltage At 50% VDRM, Tcase = 125°C 0.4 V IGT Gate trigger current VDRM = 5V, Tcase = 25°C 350 mA IGD Gate non-trigger current At 50% VDRM, Tcase = 125°C 15 mA CURVES 4500 min 25°C min 125°C max 25°C max 125°C 4000 Instantaneous on-state current IT - (A) 3500 3000 2500 2000 1500 1000 500 0 0.5 1 1.5 2 2.5 3 Instantaneous on-state voltage VT - (V) Fig.2 Maximum & minimum on-state characteristics VTM EQUATION VTM = A + Bln (IT) + C.IT+D.IT Where A = 0.259886 B = 0.122742 C = 0.000418 D = -0.002452 these values are valid for Tj = 125°C for IT 300A to 4000A 4/10 www.dynexsemi.com DCR1150N42 SEMICONDUCTOR 130 16 180 120 90 60 30 120 110 12 Maximum case temperature, T case ( o C ) Mean power dissipation - (kW) 14 10 8 6 180 4 120 90 2 60 0 1000 2000 3000 90 80 70 60 50 40 30 20 10 30 0 100 0 4000 0 Mean on-state current, IT(AV) - (A) 1000 1250 50 25 8 6 4 d.c. 180 120 90 60 30 2 0 0 250 500 750 1000 1250 1750 10 75 0 1500 12 Mean power dissipation - (kW) Maximum heatsink temperature, THeatsink - ( ° C) 750 Fig.4 Maximum permissible case temperature, double side cooled – sine wave 180 120 90 60 30 100 500 Mean on-state current, IT(AV) - (A) Fig.3 On-state power dissipation – sine wave 125 250 1500 1750 Mean on-state current, IT(AV) - (A) Fig.5 Maximum permissible heatsink temperature, double side cooled – sine wave 0 1000 2000 3000 4000 Mean on-state current, IT(AV) - (A) Fig.6 On-state power dissipation – rectangular wave 5/10 www.dynexsemi.com DCR1150N42 SEMICONDUCTOR 130 110 100 90 80 70 60 50 40 30 20 d.c. 180 120 90 60 100 Maximum heatsink temperature Theatsink -(o C) 120 Maximum permissible case temperature , Tcase -(° C) 125 d.c. 180 120 90 60 75 50 25 10 0 0 0 500 1000 1500 2000 2500 3000 0 500 1000 Fig.7 Maximum permissible case temperature, double side cooled – rectangular wave Double side cooled Thermal Impedance, Zth(j-c) ( °C/kW ) 45.0 40.0 2000 Zth Double Side Cooled Anode side cooled Zth Cathode Side Cooled Cathode side cooled Zth Anode Side Cooled i 4 Ri (°C/kW) 1 3.4733 2 4.9047 3 9.1463 Ti (s) 0.1457 0.0166 1.2832 0.3767 Ri (°C/kW) 7.6674 5.0530 9.7355 27.5992 Ti (s) 0.2241 0.0169 4.0566 8.2780 Ri (°C/kW) 6.0393 4.2782 5.1301 25.0874 Ti (s) 0.1356 0.0143 0.6594 7.2358 35.0 i i Zthth i 1 [ Ri (1 exp(T / Ti )] 30.0 Rth(j-c) Conduction 25.0 Tables show the increments of thermal resistance Rth(j-c) when the device operates at conduction angles other than d.c. Z 4 4.5220 i 4 [ R (1 exp(T / T )] i 1 20.0 Double side cooling Anode Side Cooling Zth (z) ° 15.0 180 120 90 60 30 15 10.0 5.0 0.0 0.001 2500 Fig.8 Maximum permissible heatsink temperature, double side cooled – rectangular wave 55.0 50.0 1500 Mean on-state current, IT(AV ) - (A) Mean on-state current, IT(AV) - (A) 0.01 0.1 1 10 sine. 3.03 3.49 3.99 4.43 4.77 4.92 Cathode Sided Cooling Zth (z) rect. 2.07 2.95 3.43 3.94 4.49 4.77 ° 180 120 90 60 30 15 sine. 3.03 3.49 3.99 4.43 4.76 4.92 Zth (z) rect. 2.07 2.95 3.43 3.94 4.48 4.77 ° 180 120 90 60 30 15 sine. 3.12 3.61 4.13 4.60 4.96 5.13 rect. 2.12 3.04 3.54 4.08 4.66 4.97 100 Time ( s ) Fig.9 Maximum (limit) transient thermal impedance – junction to case (°C/kW) 6/10 www.dynexsemi.com DCR1150N42 SEMICONDUCTOR 40 Conditions: Tcase= 125 C VR = 0 half-sine wave 35 ITSM 100 3 Conditions: Tcase = 125 C VR =0 Pulse width = 10ms 2 I2t 20 15 1 Surge current, ITSM- (kA) 25 I2t (MA2s) Surge current, ITSM - (kA) 30 10 10 5 0 1 0 1 10 Pulse width, t P - (ms) 1 100 10 Number of cycles Fig.10 Single-cycle surge current Fig.11 Multi-cycle surge current 7000 350 Q Smax = 1716.5*(di/dt)0.4434 I RRmax = 39.24(di/dt) 0.698 300 - (A) 6000 250 Reverse recovery current, I RR 5000 Stored charge, QS - (uC) 100 4000 3000 Q Smin = 899.3*(di/dt) 0.4966 2000 Conditions Tj = 125ºC t p = 1ms VR = -100V 1000 200 150 I RRmin = 25.156*(di/dt) 0.7297 100 Conditions Tj = 125°C tp = 1ms VR = -100V 50 0 0 0 5 10 15 20 Rate of decay of on-state current, di/dt - (A/us) Fig.12 Stored charge 25 0 5 10 15 20 25 Rate of decay of on-state current, (di/dt) - (A/us) Fig.13 Reverse recovery current 7/10 www.dynexsemi.com DCR1150N42 SEMICONDUCTOR 10 9 Gate trigger voltage, V GT - (V) 8 Upper Limit 7 6 Preferred gate drive area 5 4 3 Tj = -40oC 2 Lower Limit Tj = 25oC Tj = 125oC 1 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 Gate trigger current IGT, - (A) Fig14 Gate Characteristics 30 Lower Limit Upper Limit 5W 25 10W 20W Gate trigger voltage, VGT - (V) 50W 100W 20 150W -40C 15 10 5 0 0 1 2 3 4 5 6 7 8 9 10 Gate trigger current, IGT - (A) Fig. 15 Gate characteristics 8/10 www.dynexsemi.com DCR1150N42 SEMICONDUCTOR PACKAGE DETAILS For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 3rd ANGLE PROJECTION DO NOT SCALE IF IN DOUBT ASK HOLE Ø3.60 X 2.00 DEEP (IN BOTH ELECTRODES) 20° OFFSET (NOM.) TO GATE TUBE Device DCR1020N52 DCR1110N52 DCR1260N42 DCR1470N28 DCR1530N28 DCR1620N22 DCR1710N22 DCR680N85 DCR760N85 DCR820N65 DCR890N65 Maximum Minimum Thickness Thickness (mm) (mm) 34.89 34.34 34.89 34.34 34.77 34.22 34.54 33.99 34.54 33.99 34.465 33.915 34.465 33.915 35.51 34.96 35.51 34.96 35.15 34.6 35.15 34.6 Ø73.0 MAX Ø47.0 NOM Ø1.5 CATHODE GATE ANODE Ø47.0 NOM FOR PACKAGE HEIGHT SEE TABLE Lead length: 420mm Lead terminal connector: M4 ring Package outline type code: N Fig.17 Package outline 9/10 www.dynexsemi.com DCR1150N42 SEMICONDUCTOR IMPORTANT INFORMATION: This publication is provided for information only and not for resale. The products and information in this publication are intended for use by appropriately trained technical personnel. Due to the diversity of product applications, the information contained herein is provided as a general guide only and does not constitute any guarantee of suitability for use in a specific application.The user must evaluate the suitability of the product and the completeness of the product data for the application. The user is responsible for product selection and ensuring all safety and any warning requirements are met. Should additional product information be needed please contact Customer Service. Although we have endeavoured to carefully compile the information in this publication it may contain inaccuracies or typographical errors. The information is provided without any warranty or guarantee of any kind. This publication is an uncontrolled document and is subject to change without notice. When referring to it please ensure that it is the most up to date version and has not been superseded. The products are not intended for use in applications where a failure or malfunction may cause loss of life, injury or damage to property. The user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a product failure or malfunction. The products must not be touched when operating because there is a danger of electrocution or severe burning. Always use protective safety equipment such as appropriate shields for the product and wear safety glasses. Even when disconnected any electric charge remaining in the product must be discharged and allowed to cool before safe handling using protective gloves. Extended exposure to conditions outside the product ratings may affect reliability leading to premature product failure. Use outside the product ratings is likely to cause permanent damage to the product. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in fire or explosion. Appropriate application design and safety precautions should always be followed to protect persons and property. Product Status & Product Ordering: We annotate datasheets in the top right hand corner of the front page, to indicate product status if it is not yet fully approved for production. The annotations are as follows:Target Information: Preliminary Information: No Annotation: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. The product design is complete and final characterisation for volume production is in progress.The datasheet represents the product as it is now understood but details may change. The product has been approved for production and unless otherwise notified by Dynex any product ordered will be supplied to the current version of the data sheet prevailing at the time of our order acknowledgement. All products and materials are sold and services provided subject to Dynex’s conditions of sale, which are available on request. Any brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. HEADQUARTERS OPERATIONS CUSTOMER SERVICE DYNEX SEMICONDUCTOR LIMITED Doddington Road, Lincoln, Lincolnshire, LN6 3LF United Kingdom. Phone: +44 (0) 1522 500500 Fax: +44 (0) 1522 500550 Web: http://www.dynexsemi.com Phone: +44 (0) 1522 502753 / 502901 Fax: +44 (0) 1522 500020 e-mail: [email protected] Dynex Semiconductor Ltd. Technical Documentation – Not for resale. 10/10 www.dynexsemi.com