Dynex DCR1673SZ26 Phase control thyristor Datasheet

DCR1673SZ
DCR1673SZ
Phase Control Thyristor
Supersedes October 2000 version, DS4650-6.0
DS4650-7.0 July 2001
FEATURES
KEY PARAMETERS
■ Double Side Cooling
VDRM
2800V
■ High Surge Capability
IT(AV)
5088A
ITSM
83000A
dVdt*
1000V/µs
dI/dt
250A/µs
■ High Mean Current
■ Fatigue Free
APPLICATIONS
*Higher dV/dt selections available
■ High Power Drives
■ High Voltage Power Supplies
■ DC Motor Control
VOLTAGE RATINGS
Type Number
DCR1673SZ28
DCR1673SZ27
DCR1673SZ26
DCR1673SZ25
DCR1673SZ24
Repetitive Peak
Voltages
VDRM VRRM
V
Conditions
2800
2700
2600
2500
2400
Tvj = 0˚ to 125˚C,
IDRM = IRRM = 500mA,
VDRM, VRRM tp = 10ms,
VDSM & VRSM =
VDRM & VRRM + 100V
Respectively
Lower voltage grades available.
Outline type code: Z.
See Package Details for further information.
Fig. 1 Package outline
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table.
For example:
DCR1673SZ27
Note: Please use the complete part number when ordering and
quote this number in any future correspondance relating to your
order.
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DCR1673SZ
CURRENT RATINGS
Tcase = 60˚C unless stated otherwise
Symbol
Parameter
Conditions
Max.
Units
5088
A
Double Side Cooled
IT(AV)
Mean on-state current
IT(RMS)
RMS value
-
7995
A
Continuous (direct) on-state current
-
7280
A
3300
A
IT
Half wave resistive load
Single Side Cooled (Anode side)
IT(AV)
Mean on-state current
IT(RMS)
RMS value
-
5180
A
Continuous (direct) on-state current
-
4350
A
Conditions
Max.
Units
3990
A
IT
Half wave resistive load
CURRENT RATINGS
Tcase = 80˚C unless stated otherwise
Symbol
Parameter
Double Side Cooled
Half wave resistive load
IT(AV)
Mean on-state current
IT(RMS)
RMS value
-
6320
A
Continuous (direct) on-state current
-
5570
A
2540
A
IT
Single Side Cooled (Anode side)
IT(AV)
Mean on-state current
IT(RMS)
RMS value
-
3980
A
Continuous (direct) on-state current
-
3250
A
IT
Half wave resistive load
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DCR1673SZ
SURGE RATINGS
Parameter
Symbol
ITSM
I2t
ITSM
I2t
Surge (non-repetitive) on-state current
I2t for fusing
Surge (non-repetitive) on-state current
Conditions
Max.
Units
10ms half sine; Tcase = 125oC
66.4
kA
VR = 50% VRRM - 1/4 sine
22.0 x 106
A2s
10ms half sine; Tcase = 125oC
83.0
kA
VR = 0
34.4 x 106
A2s
I2t for fusing
THERMAL AND MECHANICAL DATA
Min.
Max.
dc
-
0.0065
o
Anode dc
-
0.013
o
Cathode dc
-
0.013
o
C/W
Double side
-
0.001
o
C/W
Single side
-
0.002
o
C/W
On-state (conducting)
-
135
o
Reverse (blocking)
-
125
o
Storage temperature range
–55
125
o
Clamping force
74.0
91.0
Parameter
Symbol
Conditions
Double side cooled
Rth(j-c)
Thermal resistance - junction to case
Units
C/W
C/W
Single side cooled
Rth(c-h)
Tvj
Tstg
-
Thermal resistance - case to heatsink
Clamping force 83.0kN
with mounting compound
C
Virtual junction temperature
C
C
kN
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DCR1673SZ
DYNAMIC CHARACTERISTICS
Symbol
Parameter
Conditions
Typ.
Max.
Units
Peak reverse and off-state current
At VRRM/VDRM, Tcase = 125oC
-
500
mA
dV/dt
Maximum linear rate of rise of off-state voltage
To 67% VDRM Tj = 125oC
-
1000
V/µs
-
250
A/µs
Rate of rise of on-state current
From 67% VDRM to 1100A
Gate source 1A
tr = 0.5µs, Tj = 125oC
Repetitive 50Hz
dI/dt
Non-repetitive
-
500
A/µs
IRRM/IDRM
Threshold voltage
At Tvj = 125oC
-
0.82
V
rT
On-state slope resistance
At Tvj = 125oC
-
0.076
mΩ
tgd
Delay time
VD = 67% VDRM, Gate source 20V, 10Ω
tr = 0.5µs, Tj = 25oC
1.0
1.5
µs
IL
Latching current
Tj = 25oC, VD = 5V
150
750
mA
IH
Holding current
Tj = 25oC, Rg-k = ∞
40
200
mA
Max.
Units
VT(TO)
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
Conditions
VGT
Gate trigger voltage
VDRM = 5V, Tcase = 25oC
3.5
V
IGT
Gate trigger current
VDRM = 5V, Tcase = 25oC
500
mA
VGD
Gate non-trigger voltage
At VDRM Tcase = 125oC
0.25
V
VFGM
Peak forward gate voltage
Anode positive with respect to cathode
30
V
VFGN
Peak forward gate voltage
Anode negative with respect to cathode
0.25
V
VRGM
Peak reverse gate voltage
5
V
IFGM
Peak forward gate current
Anode positive with respect to cathode
30
A
PGM
Peak gate power
See table, gate characteristics curve
150
W
PG(AV)
Mean gate power
10
W
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DCR1673SZ
CURVES
10000
10000
d.c.
Measured under pulse conditions
Tj = 125˚C
Halfwave
3 phase
8000
Mean power dissipation - (W)
Instantaneous on-state current, IT - (A)
8000
6000
4000
6 phase
6000
4000
2000
2000
0
0.5
1.0
1.5
Instantaneous on-state voltage, VT - (V)
Fig.2 Maximum (limit) on-state characteristics
2.0
0
0
2000
4000
6000
Mean on-state current, IT(AV) - (A)
8000
Fig.3 Dissipation curves
VTM Equation:VTM = A + Bln (IT) + C.IT+D.√IT
Where
A = 0.4769404
B = 0.02958434
C = 3.978298 x 10–5
D = 6.677479 x 10–3
these values are valid for Tj = 125˚C for IT 500A to 10000A
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DCR1673SZ
100000
100
Tj = 125˚C
Table gives pulse power PGM in Watts
Pulse Width
Recovered charge Qr - (µC)
Gate trigger voltage, VGT - (V)
IT = 3000A
10000
Frequency Hz
50
150
150
150
150
20
µs
100
200
500
1ms
10ms
100
150
150
150
100
-
400
150
125
100
25
-
VFGM
100W
50W
20W
10W
10
it
99
im
rL
Tj = 25˚C
e
pp
1
%
U
%
VGD
1000
1
10
100
Lo
w
L
er
im
it 1
IGD
0.1
0.001
IFGM
0.01
0.1
1.0
Gate trigger current, IGT - (A)
Rate of decay of on-state current, dI/dt - (A/µs)
Fig.4 Recovered charge
10
Fig.5 Gate characteristics
200
0.01
Double side cooled
0.001
Double side
0.0065
0.0072
0.0073
0.0076
d.c.
Halfwave
3 phase 120˚
6 phase 60˚
0.01
0.1
30
100
20
I2t
50
10
Effective thermal resistance
Junction to case ˚C/W
Conduction
0.0001
0.001
150
1
Anode side
0.0130
0.0137
0.0138
0.0141
10
0
1
100
Time - (s)
10
ms
5
1
10
I2t value for fusing - (A2s x 106)
Thermal impedance - (˚C/W)
Anode side cooled
Peak half sinewave on-state current - (kA)
0.1
0
50
Cycles at 50Hz
Duration
Fig.6 Transient thermal impedance - junction to case
Fig.7 Surge (non-repetitive) on-state current vs time (with
50% VRRM at Tcase = 125˚C)
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DCR1673SZ
PACKAGE DETAILS
For further package information, please contact your nearest Customer Service Centre. All dimensions in mm, unless
stated otherwise. DO NOT SCALE.
2 holes Ø3.6 ± 0.5 depth 2.0
(One in each electrode)
Gate tab
Cathode tab
Cathode
Ø151 max
37.5 max
Ø100
Ø100
Ø148 max
Anode
Nominal weight: 2800g
Clamping force: 83kN ±10%
Lead length: 500mm
Lead terminal connector: M4 ring
Package outline type code: Z
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DCR1673SZ
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor,
and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability
of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our
customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution
(PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACS range includes a varied selection of pre-loaded
clamps to suit all of our manufactured devices. Types available include cube clamps for single side cooling of ‘T’ 23mm and ‘E’ 30mm
discs, and bar clamps right up to 83kN for our ‘Z’ 100mm thyristors and diodes.
Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer
service office.
http://www.dynexsemi.com
e-mail: [email protected]
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
DYNEX POWER INC.
99 Bank Street, Suite 410,
Ottawa, Ontario, Canada, K1P 6B9
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
CUSTOMER SERVICE CENTRES
Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33
North America Tel: (613) 723-7035. Fax: (613) 723-1518.
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
SALES OFFICES
Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (949) 733-3005. Fax: (949) 733-2986.
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2001 Publication No. DS4650-7 Issue No. 7.0 July 2001
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
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