Dynex DCR803SG17 Phase control thyristor Datasheet

DCR803SG
DCR803SG
Phase Control Thyristor
Advance Information
Supersedes January 2000 version, DS4451-4.0
DS4451-5.0 July 2001
FEATURES
KEY PARAMETERS
■ Double Side Cooling
VDRM
1800V
■ High Surge Capability
IT(AV)
1045A
ITSM
14000A
dVdt
1000V/µs
dI/dt
1000A/µs
■ High Mean Current
■ Fatigue Free
APPLICATIONS
■ High Power Drives
■ High Voltage Power Supplies
■ DC Motor Control
VOLTAGE RATINGS
Type Number
DCR803SG18
DCR803SG17
DCR803SG16
DCR803SG15
DCR803SG14
Repetitive Peak
Voltages
VDRM VRRM
V
Conditions
1800
1700
1600
1500
1400
Tvj = 0˚ to 125˚C,
IDRM = IRRM = 50mA,
VDRM, VRRM tp = 10ms,
VDSM & VRSM =
VDRM & VRRM + 100V
respectively
Lower voltage grades available.
Outline type code: G.
See Package Details for further information.
Fig. 1 Package outline
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table.
For example:
DCR806SG26
Note: Please use the complete part number when ordering
and quote this number in any future correspondance relating
to your order.
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DCR803SG
CURRENT RATINGS
Tcase = 60˚C unless stated otherwise
Symbol
Parameter
Conditions
Max.
Units
1045
A
Double Side Cooled
Half wave resistive load
IT(AV)
Mean on-state current
IT(RMS)
RMS value
-
1641
A
Continuous (direct) on-state current
-
1450
A
675
A
IT
Single Side Cooled (Anode side)
IT(AV)
Mean on-state current
IT(RMS)
RMS value
-
1060
A
Continuous (direct) on-state current
-
862
A
Conditions
Max.
Units
820
A
IT
Half wave resistive load
CURRENT RATINGS
Tcase = 80˚C unless stated otherwise
Symbol
Parameter
Double Side Cooled
Half wave resistive load
IT(AV)
Mean on-state current
IT(RMS)
RMS value
-
1285
A
Continuous (direct) on-state current
-
1085
A
505
A
IT
Single Side Cooled (Anode side)
IT(AV)
Mean on-state current
IT(RMS)
RMS value
-
793
A
Continuous (direct) on-state current
-
620
A
IT
Half wave resistive load
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DCR803SG
SURGE RATINGS
Parameter
Symbol
ITSM
I2t
ITSM
I2t
Surge (non-repetitive) on-state current
I2t for fusing
Surge (non-repetitive) on-state current
Conditions
Max.
Units
10ms half sine; Tcase = 125oC
11.2
kA
VR = 50% VRRM - 1/4 sine
625 x 103
A2s
10ms half sine; Tcase = 125oC
14.0
kA
VR = 0
975 x 103
A2s
I2t for fusing
THERMAL AND MECHANICAL DATA
Min.
Max.
Units
dc
-
0.032
o
Anode dc
-
0.064
o
Cathode dc
-
0.064
o
Double side
-
0.008
o
Single side
-
0.016
o
On-state (conducting)
-
135
o
Reverse (blocking)
-
125
o
Storage temperature range
-55
125
o
Clamping force
11.0
13.0
Parameter
Symbol
Conditions
Double side cooled
Rth(j-c)
Thermal resistance - junction to case
C/W
C/W
Single side cooled
Rth(c-h)
Tvj
Tstg
-
Thermal resistance - case to heatsink
Clamping force 12.5kN
with mounting compound
C/W
C/W
C/W
C
Virtual junction temperature
C
C
kN
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DCR803SG
DYNAMIC CHARACTERISTICS
Symbol
Parameter
Conditions
Typ.
Max.
Units
Peak reverse and off-state current
At VRRM/VDRM, Tcase = 125oC
-
50
mA
dV/dt
Maximum linear rate of rise of off-state voltage
To 67% VDRM Tj = 125oC. Gate open circuit.
-
1000
V/µs
-
500
A/µs
Rate of rise of on-state current
From 67% VDRM to 1500A
Gate source 1.5A
tr = 0.5µs, Tj = 125oC
Repetitive 50Hz
dI/dt
Non-repetitive
-
1000
A/µs
IRRM/IDRM
Threshold voltage
At Tvj = 125oC
-
0.85
V
rT
On-state slope resistance
At Tvj = 125oC
-
0.38
mΩ
tgd
Delay time
VD = 67% VDRM, Gate source 30V, 15Ω
tr = 0.5µs, Tj = 25oC
-
1.5
µs
tq
Turn-off time
VR = 50V, dIRR/dt = 20A/µs,
VDR = 67% VDRM, dVDR/dt = 20V/µs linear
200
300
µs
IL
Latching current
Tj = 25oC, VD = 5V
350
1000
mA
IH
Holding current
Tj = 25oC, VD = 5V
40
100
mA
Typ.
Max.
Units
VT(TO)
IT = 1000A, tp = 1ms, Tj = 125˚C,
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
Conditions
VGT
Gate trigger voltage
VDRM = 5V, Tcase = 25oC
1.0
3.5
V
IGT
Gate trigger current
VDRM = 5V, Tcase = 25oC
-
200
mA
VGD
Gate non-trigger voltage
At VDRM Tcase = 125oC
-
0.25
V
IGD
Gate non-trigger current
At VDRM Tcase = 125oC
-
-
A
VFGM
Peak forward gate voltage
Anode positive with respect to cathode
-
30
V
VFGN
Peak forward gate voltage
Anode negative with respect to cathode
-
0.25
V
VRGM
Peak reverse gate voltage
-
5
V
IFGM
Peak forward gate current
Anode positive with respect to cathode
-
30
A
PGM
Peak gate power
See table, gate characteristics curve
-
150
W
PG(AV)
Mean gate power
-
10
W
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DCR803SG
CURVES
2500
2000
Measured under
pulse conditions
Half wave
d.c.
1600
Instantaneous on-state current, IT - (A)
2000
Mean power dissipation - (W)
3 phase
1500
1000
6 phase
1200
800
400
500
Tj = 125˚C Min
Tj = 125˚C Max
0
0.5
1.0
1.5
2.0
Instantaneous on-state voltage, VT - (V)
Fig.2 Maximum (limit) on-state characteristics
2.5
0
0
400
800
1200
Mean on-state current, IT(AV) - (A)
1600
Fig.3 Dissipation curves
VTM Equation:VTM = A + Bln (IT) + C.IT+D.√IT
Where
A = 0.464203
B = 0.51516
C = 0.000249
D = 0.005951
these values are valid for Tj = 125˚C for IT 500A to
2500A
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DCR803SG
100
10000
IT
QS
Gate trigger voltage, VGT - (V)
Total stored charge QS - (µC)
IRR
10
1.0
10
Rate of decay of on-state current, dI/dt - (A/µs)
e
Low
0.1
0.001
100
it 9
9%
1
VGD
Conditions:
QS is total integral stored charge
Tj = 125˚C
100
0.1
U
lim
r lim
it 99
%
0.01
Tj = 25˚C
Tj = -40˚C
IT = 1250A
IT = 500A
Min. value
r
ppe
Tj = 125˚C
1000
Region of
certain triggering
0.1
1
IFGM
Fig.5 Gate characteristics
25
0.1
I2t = Î2 x t
2
Double side cooled
Conduction
Effective thermal resistance
Junction to case ˚C/W
Double side
d.c.
0.032
Halfwave
0.034
3 phase 120˚
0.044
6 phase 60˚
0.057
0.01
0.1
Time - (s)
Anode side
0.064
0.066
0.076
0.089
1.0
Fig.6 Maximum (limit) transient thermal impedance junction to case
10
20
600
15
10
500
I2t
I2t value - (A2s x 103)
0.01
Peak half sine wave on-state current - (kA)
Anode side cooled
Thermal Impedance - Junction to case (˚C/W)
10
Gate trigger current, IGT - (A)
Fig.4 Stored charge
0.001
0.001
0W
10
W
50
IT = 1250A
IT = 500A
Max. value
dI/dt
W
20
W
10
5W
Pulse width Frequency Hz Table gives pulse power PGM in Watts
µs
50 100 400
100
150 150 150
200
150 150 125
500
150 150 100
1ms
150 100 25
10ms
20 - -
5
0
1
10
ms
1
2 3 45
10
400
20 30 50
Cycles at 50Hz
Duration
Fig.7 Surge (non-repetitive) on-state current vs time (with
50% VRRM at Tcase 125˚C)
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DCR803SG
PACKAGE DETAILS
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
Hole Ø3.6x2.0 deep (in both electrodes)
Cathode tab
Cathode
Ø58.5 max
Ø34 nom
27.0
25.4
Ø1.5
Gate
Ø34 nom
Anode
Nominal weight: 250g
Clamping force: 12.5kN ±10%
Lead length: 420mm
Lead terminal connector: M4 ring
Package outline type code: G
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DCR803SG
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor,
and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current
capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our
customers.
Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete solution
(PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of pre-loaded
clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of ‘T’ 22mm
Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839
HEATSINKS
Power Assembly has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance
or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or Customer
Services.
http://www.dynexsemi.com
e-mail: [email protected]
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
DYNEX POWER INC.
99 Bank Street, Suite 410,
Ottawa, Ontario, Canada, K1P 6B9
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
CUSTOMER SERVICE CENTRES
Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33
North America Tel: (613) 723-7035. Fax: (613) 723-1518.
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
SALES OFFICES
Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (949) 733-3005. Fax: (949) 733-2986.
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2001 Publication No. DS4451-5 Issue No. 5.0 July 2001
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations:
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Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
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