DOMINANT DDS-CJS-R1 Led alingap Datasheet

DOMINANT
Semiconductors
Innovating Illumination
DomiLED
TM
DATA SHEET:
DomiLEDTM
AlInGaP : DDx-xJS
TM
Synonymous with function and performance, the DomiLED series is
perfectly suited for a variety of cross-industrial applications due to its
small package outline, durability and superior brightness.
TM
Features:
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High brightness surface mount LED.
120° viewing angle.
Small package outline (LxWxH) of 3.2 x 2.8 x 1.8mm.
Qualified according to JEDEC moisture sensitivity Level 2.
Compatible to IR reflow soldering.
Environmental friendly; RoHS compliance.
Applications:
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Automotive: interior applications, eg: switches, telematics,
climate control system, dashboard, etc.
Consumer Appliances: LCD illumination as in PDAs, LCD TV.
Communication: indicator and backlight in mobilephone.
Display: full color display video notice board.
Industry: white goods (eg: Oven, microwave, etc.).
© 2005 DomiLED is a trademark of DOMINANT Semiconductors.
All rights reserved. Product specifications are subject to change without notice.
1
07/06/2007 V10.0
DOMINANT TM
AllnGap : DDx-xJS
Semiconductors
Innovating Illumination
Part Ordering
Number
DDH-CJS-PQ2-1
• DDH-CJS-P1
Chip Technology
/ Color
Viewing
Angle˚
AllnGaP
120
Hyper-red, 640nm
Luminous Intensity @
IF = 20mA IV (mcd)
45.0 - 112.5
45.0 - 56.0
• DDH-CJS-P2
56.0 - 71.5
• DDH-CJS-Q1
71.5 - 90.0
• DDH-CJS-Q2
90.0 - 112.5
DDS-CJS-QR2-1
• DDS-CJS-Q1
AllnGap
120
Super-red, 632nm
71.5 - 180.0
71.5 - 90.0
• DDS-CJS-Q2
90.0 - 112.5
• DDS-CJS-R1
112.5 - 140.0
• DDS-CJS-R2
140.0 - 180.0
DDS-SJS-QR2-1
71.5 - 180.0
• DDS-SJS-Q1
71.5 - 90.0
• DDS-SJS-Q2
90.0 - 112.5
• DDS-SJS-R1
112.5 - 140.0
• DDS-SJS-R2
140.0 - 180.0
DDR-CJS-RS2-1
• DDR-CJS-R1
AllnGap
120
Red, 625nm
112.5 - 285.0
112.5 - 140.0
• DDR-CJS-R2
140.0 - 180.0
• DDR-CJS-S1
180.0 - 224.0
• DDR-CJS-S2
224.0 - 285.0
DDR-SJS-RS2-1
112.5 - 285.0
• DDR-SJS-R1
112.5 - 140.0
• DDR-SJS-R2
140.0 - 180.0
• DDR-SJS-S1
180.0 - 224.0
• DDR-SJS-S2
224.0 - 285.0
DDR-TJS-TU2-1
TS AllnGap
• DDR-TJS-T1
Red, 625nm
120
285.0 - 715.0
285.0 - 335.0
• DDR-TJS-T2
335.0 - 450.0
• DDR-TJS-U1
450.0 - 560.0
• DDR-TJS-U2
560.0 - 715.0
DDA-CJS-RS2-1
• DDA-CJS-R1
AllnGap
120
Amber, 615nm
112.5 - 285.0
112.5 - 140.0
• DDA-CJS-R2
140.0 - 180.0
• DDA-CJS-S1
180.0 - 224.0
• DDA-CJS-S2
224.0 - 285.0
DDA-SJS-ST2-1
180.0 - 450.0
• DDA-SJS-S1
180.0 - 224.0
• DDA-SJS-S2
224.0 - 285.0
• DDA-SJS-T1
285.0 - 355.0
• DDA-SJS-T2
355.0 - 450.0
2
07/06/2007 V10.0
DOMINANT TM
AllnGap : DDx-xJS
Semiconductors
Innovating Illumination
Part Ordering
Number
DDO-CJS-RS2-1
• DDO-CJS-R1
Chip Technology
/ Color
Viewing
Angle˚
AllnGap
120
Orange, 605nm
Luminous Intensity @
IF = 20mA IV (mcd)
112.5 - 285.0
112.5 - 140.0
• DDO-CJS-R2
140.0 - 180.0
• DDO-CJS-S1
180.0 - 224.0
• DDO-CJS-S2
224.0 - 285.0
DDO-SJS-ST2-1
180.0 - 450.0
• DD0-SJS-S1
180.0 - 224.0
• DD0-SJS-S2
224.0 - 285.0
• DD0-SJS-T1
285.0 - 355.0
• DD0-SJS-T2
355.0 - 450.0
DDY-CJS-RS2-1
• DDY-CJS-R1
AllnGap
120
Yellow, 587nm
112.5 - 285.0
112.5 - 140.0
• DDY-CJS-R2
140.0 - 180.0
• DDY-CJS-S1
180.0 - 224.0
• DDY-CJS-S2
224.0 - 285.0
DDY-SJS-ST2-1
180.0 - 450.0
• DDY-SJS-S1
180.0 - 224.0
• DDY-SJS-S2
224.0 - 285.0
• DDY-SJS-T1
285.0 - 355.0
• DDY-SJS-T2
355.0 - 450.0
DDY-TJS-TU2-1
• DDY-TJS-T1
TS AllnGaP
120
Yellow, 590nm
285.0 - 715.0
285.0 - 355.0
• DDY-TJS-T2
355.0 - 450.0
• DDY-TJS-U1
450.0 - 560.0
• DDY-TJS-U2
560.0 - 715.0
DDG-CJS-PQ2-1
• DDG-CJS-P1
AllnGap
120
Green, 572nm
45.0 - 112.5
45.0 - 56.0
• DDG-CJS-P2
56.0 - 71.5
• DDG-CJS-Q1
71.5 - 90.0
• DDG-CJS-Q2
90.0 - 112.5
DDG-SJS-QR2-1
71.5 - 180.0
• DDG-SJS-Q1
71.5 - 90.0
• DDG-SJS-Q2
90.0 - 112.5
• DDG-SJS-R1
112.5 -140.0
• DDG-SJS-R2
140.0 - 180.0
DDP-SJS-LM2-1
• DDP-SJS-L1
AllnGap
120
Pure Green, 560nm
11.2 - 28.5
11.2 - 14.0
• DDP-SJS-L2
14.0 - 18.0
• DDP-SJS-M1
18.0 - 22.4
• DDP-SJS-M2
22.4 - 28.5
3
07/06/2007 V10.0
DOMINANT TM
AllnGap : DDx-xJS
Semiconductors
Innovating Illumination
Part Ordering
Number
DDP-SJS-MN2-1
• DDP-SJS-M1
Chip Technology
/ Color
Viewing
Angle˚
AllnGap
120
Luminous Intensity @
IF = 20mA IV (mcd)
18.0 - 45.0
18.0 - 22.4
Pure Green, 560nm
• DDP-SJS-M2
22.4 - 28.5
• DDP-SJS-N1
28.5 - 35.5
• DDP-SJS-N2
35.5 - 45.0
NOTE
1. All part number above comes in a quantity of 2000 units per reel.
2. Other luminous intensity groups are also available upon request.
3. Luminous intensity is measured with an accuracy of ± 11%.
4. Wavelength binning is carried for all units as per the wavelength-binning table. Only one wavelength group is allowed for each reel.
5. An optional Vf binning is also available upon request. Binning scheme is as per following table.
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07/06/2007 V10.0
DOMINANT TM
AllnGap : DDx-xJS
Semiconductors
Innovating Illumination
Wavelength Grouping
Color
Group
Wavelength distribution (nm)
DDH; Hyper-red
Full
636 - 646
DDS; Super-red
Full
625 - 640
DDR-CJ, -SJ; Red (AS)
Full
620 - 630
DDR-TJ; Red (TS)
Full
620 - 635
DDA; Amber
Full
610 - 621
W
610 - 615
X
615 - 621
Full
600 - 612
W
600 - 603
X
603 - 606
Y
606 - 609
Z
609 - 612
Full
582 - 594
W
582 - 585
X
585 - 588
Y
588 - 591
Z
591 - 594
DDO; Orange
DDY; Yellow
DDG; Green
DDP; Pure Green
Full
564.5 - 576.5
W
564.5 - 567.5
X
567.5 - 570.5
Y
570.5 - 573.5
Z
573.5 - 576.5
Full
552.5 - 564.5
W
552.5 - 555.5
X
555.5 - 558.5
Y
558.5 - 561.5
Z
561.5 - 564.5
Dominant wavelength is measured with an accuracy of ± 1 nm.
5
07/06/2007 V10.0
DOMINANT TM
AllnGap : DDx-xJS
Semiconductors
Innovating Illumination
Electrical Characteristics at Ta=25˚C
Vf @ If = 20mA
Part Number
Vr @ Ir = 10uA
Typ. (V)
Max. (V)
Min. (V)
1.9
2.3
12
1.8
2.3
12
2.1
2.6
12
DDH-CJS, DDS-CJS, DDR-CJS, DDA-CJS,
DDO-CJS, DDY-CJS, DDG-CJS
DDS-SJS, DDR-SJS, DDA-SJS, DDO-SJS,
DDY-SJS, DDG-SJS, DDP-SJS
DDR-TJS, DDY-TJS
Forward voltage, Vf is measured with an accuracy of ± 0.1 V.
Vf Binning (Optional)
Vf Bin @ 20mA
Forward Voltage (V)
01
1.55 … 1.85
02
1.85 … 2.15
03
2.15 … 2.45
04
2.45 … 2.75
Forward voltage, Vf is measured with an accuracy of ± 0.1 V. Please consult sales & marketing for special part number to incorporate Vf binning.
Absolute Maximum Ratings
Maximum Value
Unit
30
mA
DDx-SJS/DDx-TJS :
1000
mA
DDx-CJS :
500
DC forward current
Peak pulse current;
(tp ≤ 10µs, Duty cycle = 0.005)
Reverse voltage
12
V
ESD threshold (HBM)
2
KV
125
˚C
Operating temperature
-40 … +100
˚C
Storage temperature
-40 … +100
˚C
75
mW
- Junction / ambient, Rth JA
500
K/W
- Junction / solder point, Rth JS
(Mounting on FR4 PCB, pad size >= 16 mm2 per pad)
280
K/W
LED junction temperature
Power dissipation (at room temperature)
Thermal resistance
6
07/06/2007 V10.0
DOMINANT TM
AllnGap : DDx-xJS
Semiconductors
Innovating Illumination
Characteristics (Ta = 25˚C)
Symbol
O dom (typ)
IF = 20mA; 0 ˚C <= T <= 100 ˚C
Temperature coefficient of
Temperature coefficient of VF (typ)
IF = 20mA; 0 ˚C <= T <= 100 ˚C
Temperature coefficient of IV (typ)
IF = 20mA; 0 ˚C <= T <= 100 ˚C
TC
Part Number
O dom (typ)
TCV
TCIV
7
Value
DDR-CJS, DDR-SJS
0.03
DDS-CJS, DDS-SJS
0.01
DDO-CJS, DDO-SJS
0.04
DDY-CJS, DDY-SJS
0.09
DDA-CJS, DDA-SJS
0.05
DDG-CJS, DDG-SJS
0.10
DDH-CJS
0.01
DDR-TJS
0.02
DDY-TJS
0.09
DDP-SJS
0.10
DDR-CJS, DDR-SJS
-4.3
DDS-CJS, DDS-SJS
-2.3
DDO-CJS, DDO-SJS
-1.6
DDY-CJS, DDY-SJS
-3.3
DDA-CJS, DDA-SJS
-3.2
DDG-CJS, DDG-SJS
-0.2
DDH-CJS
-1.6
DDR-TJS
-2.0
DDY-TJS
-1.6
DDP-SJS
-0.2
DDR-CJS, DDR-SJS
-0.7
DDS-CJS, DDS-SJS
-0.4
DDO-CJS, DDO-SJS
-1.5
DDY-CJS, DDY-SJS
-2.3
DDA-CJS, DDA-SJS
-1.1
DDG-CJS, DDG-SJS
-0.8
DDH-CJS
-0.3
DDR-TJS
-1.8
DDY-TJS
-5.1
DDP-SJS
-0.4
Unit
nm / K
mV / K
mcd / K
07/06/2007 V10.0
DOMINANT TM
AllnGap : DDx-xJS
Semiconductors
Innovating Illumination
Forward Current Vs Forward Voltage
30
2.2
2
25
1.8
20
Forward Current, mA
1.6
Relative Intensity
Relative Intensity; Normalized at 20mA
Relative Luminous Intensity Vs Forward Current
1.4
1.2
1
0.8
0.6
0.4
0.2
15
5
0
0
0
10
20
30
40
50
60
1.2
1.4
1.8
2
2.2
2.4
2.6
Forward Voltage, V
Maximum Current Vs Temperature
Relative Intensity Vs Wavelength
1
Yellow
0.9
Relative Intensity
25
20
15
10
Orange
Green
0.8
Amber
0.7
Red
Pure
Green
0.6
0.5
0.4
Super Red
0.3
Hyper Red
0.2
5
0.1
0
0
0
10
20
30
40
50
60
70
80
90 100
500
600
700
800
Wavelength, nm
Ambient Temperature
Radiation Pattern
Allowable Forward Current Vs Duty Ratio (Ta= 25 Deg C)
30°
10000
Allowable Forward Current
1.6
Forward Current, mA
30
Forward Current, mA
TS AlInGaP
10
35
Forward Current, mA
AS AlInGaP
20°
10°
0°
1.0
40°
DDx-SJS/DDx-TJS
0.8
1000
100
DDx-CJS
50°
0.6
60°
0.4
70°
0.2
80°
10
1
10
90°
100
0
Duty Ratio, %
8
07/06/2007 V10.0
DOMINANT TM
AllnGap : DDx-xJS
Semiconductors
Innovating Illumination
DomiLED • AllnGap : DDx-xJS Package Outlines
TM
9
07/06/2007 V10.0
DOMINANT TM
AllnGap : DDx-xJS
Semiconductors
Innovating Illumination
Recommended Solder Pad
10
07/06/2007 V10.0
DOMINANT TM
AllnGap : DDx-xJS
Semiconductors
Innovating Illumination
Taping and orientation
• Reels come in quantity of 2000 units.
• Reel diameter is 180 mm.
11
07/06/2007 V10.0
DOMINANT TM
AllnGap : DDx-xJS
Semiconductors
Innovating Illumination
Packaging Specification
12
07/06/2007 V10.0
DOMINANT TM
AllnGap : DDx-xJS
Semiconductors
Innovating Illumination
Packaging Specification
Moisture sensitivity level
Barcode label
DOMINANT Semiconductors
ROHS Compliant
LOT NO : lotno
PB Free
PART NO : partno
QTY : qty
S/N : xxx
D/C: xxxx
GROUP : group
Reel
Moisture absorbent material +
Moisture indicator
The reel, moisture absorbent material and moisture indicator are
sealed inside the moisture proof foil bag
Average 1pc DomiLED/Multi DomiLED
1 completed bag (2000pcs)
0.034
0.034
190 ± 10
190
10
Weight
Weight(gram)
(gram)
Cardboard
Box
DOMINANT TM
Semiconductors
For DomiLED
TM
Cardboard Box
Size
Dimensions (mm)
Empty Box
Weight (kg)
Reel / Box
Quantity / Box (pcs)
Small
300 x 250 x 250
0.58
15 reels MAX
30,000 MAX
Large
416 x 516 x 476
1.74
55 reels MAX
110,000 MAX
13
07/06/2007 V10.0
DOMINANT TM
AllnGap : DDx-xJS
Semiconductors
Innovating Illumination
Recommended Sn-Pb IR-Reflow Soldering Profile
Classification Reflow Profile (JEDEC J-STD-020C)
275
235-240˚C
10-30s
250
225
Ramp-up
3˚C/sec max.
Temperature (˚C)
200
175
183˚C
150
60-150s
125
Rampdown
6˚C/sec
max.
100
75
Preheat 60-120s
50
360s max
25
0
50
100
150
200
Recommended Pb-free Soldering Profile
Classification Reflow Profile (JEDEC J-STD-020C)
300
255-260˚C
10-30s
275
250
Temperature (˚C)
Ramp-up
3˚C/sec max.
217˚C
225
200
60-150s
175
150
125
Rampdown
6˚C/sec
max.
100
75
Preheat 60-180s
50
25
480s max
0
50
100
150
200
Time (sec)
14
07/06/2007 V10.0
DOMINANT TM
AllnGap : DDx-xJS
Semiconductors
Innovating Illumination
Revision History
Page
Subjects
Date of Modification
New Format
06 Sept 2005
7
Graph: Maximum Current Vs Temperature.
When Ambient Temperature=100o; Forward
Current=15mA
06 Mar 2006
7
Add Characteristics table
07 June 2007
8
Add Allowable Forward Current Vs Duty
Ratio Graph
07 June 2007
NOTE
All the information contained in this document is considered to be reliable at the time of publishing. However, DOMINANT
Semiconductors does not assume any liability arising out of the application or use of any product described herein.
DOMINANT Semiconductors reserves the right to make changes at any time without prior notice to any products in order
to improve reliability, function or design.
DOMINANT Semiconductors products are not authorized for use as critical components in life support devices or systems
without the express written approval from the Managing Director of DOMINANT Semiconductors.
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07/06/2007 V10.0
DOMINANT TM
Semiconductors
Innovating Illumination
AllnGap : DDx-xJS
About Us
DOMINANT Semiconductors is a dynamic Malaysian Corporation that is among the world’s leading SMT LED
Manufacturers. An excellence – driven organization, it offers a comprehensive product range for diverse industries
and applications. Featuring an internationally certified quality assurance acclaim, DOMINANT’s extra bright LEDs
are perfectly suited for various lighting applications in the automotive, consumer and communications as well as industrial sectors. With extensive industry experience and relentless pursuit of innovation, DOMINANT’s state-of-art
manufacturing, research and testing capabilities have become a trusted and reliable brand across the globe. More
information about DOMINANT Semiconductors can be found on the Internet at http://www.dominant-semi.com.
Please contact us for more information:
Head Quarter
DOMINANT Semiconductors Sdn. Bhd.
Lot 6, Batu Berendam, FTZ Phase III, 75350 Melaka, Malaysia
Tel: (606) 283 3566 Fax: (606) 283 0566
E-mail: [email protected]
DOMINANT China Sales Office
DOMINANT Semiconductors (Shenzhen) Co. Ltd.
24BC Newbaohui Building, No. 1007 West Nanhai Blvd., Nanshan, Shenzhen, China P.C. 518054
Tel: +86 (755) 86031785 / +86 (755) 86031786 Fax: +86 (755) 86031789
E-mail: [email protected]
DOMINANT Korea Sales Office
DOMINANT Semiconductors Korea Inc.
902 Sunil Technopia, 440 Sangdaewon-dong, Jungwon-gu, Sungnam-si, Kyunggi-do, Korea 462726
Tel: 82-31-777-3978 Fax: 82-31-777-3976
E-mail: [email protected]
DOMINANT
Semiconductors
Innovating Illumination
TM
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