Shindengen DF10SC9 Schottky rectifiers (sbd) (90v 10a) Datasheet

SHINDENGEN
Schottky Rectifiers (SBD)
DF10SC9
Dual
OUTLINE DIMENSIONS
Case : STO-220
Unit : mm
90V 10A
FEATURES
● SMT
● Tj150℃
● PRRSM
● High
avalanche guaranteed
current capacity with Small Package
APPLICATION
● Switching power supply
● DC/DC converter
● Home Appliances, Office Equipment
● Telecommunication
RATINGS
●Absolute Maximum Ratings (If not specified Tc=25℃)
Item
Symbol
Conditions
Storage Temperature
Tstg
Operating Junction Temperature
Tj
Maximum Reverse Voltage
VRM
Repetitive Peak Surge Reverse Voltage
VRRSM Pulse width 0.5ms, duty 1/40
Average Rectified Forward Current
IO
50Hz sine wave, R-load, Rating for each diode Io/2, Tc=131℃
Peak Surge Forward Current
IFSM 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=125℃
Repetitive Peak Surge Reverse Power
PRRSM Pulse width 10μs, Rating of per diode, Tj=25℃
Ratings
-55〜150
150
90
100
10
150
330
●Electrical Characteristics (If not specified Tc=25℃)
Item
Symbol
Conditions
Forward Voltage
VF IF=5A,
Pulse measurement, Rating of per diode
IR
VR=VRM, Pulse measurement, Rating of per diode
Reverse Current
Junction Capacitance
Cj f=1MHz, VR =10V, Rating of per diode
Thermal Resistance
θjc junction to case
Ratings Unit
Max.0.75
V
Max.3
mA
Typ.185
pF
Max.1.2 ℃/W
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
Unit
℃
℃
V
V
A
A
W
DF10SC9
Forward Voltage
Forward Current IF [A]
10
1
Tc=150°C [MAX]
Tc=150°C [TYP]
Tc=25°C [MAX]
Tc=25°C [TYP]
Pulse measurement per diode
0.1
0
0.2
0.4
0.6
0.8
1
Forward Voltage VF [V]
1.2
1.4
1.6
Junction Capacitance Cj [pF]
100
1000
1
10
Junction Capacitance
Reverse Voltage VR [V]
DF10SC9
100
f=1MHz
Tc=25°C
TYP
per diode
DF10SC9
Reverse Current
1000
Tc=150°C [MAX]
100
Tc=150°C [TYP]
Reverse Current IR [mA]
Tc=125°C [TYP]
10
Tc=100°C [TYP]
1
Tc=75°C [TYP]
0.1
Pulse measurement per diode
0.01
0
20
40
60
Reverse Voltage VR [V]
80
100
DF10SC9
Reverse Power Dissipation
Reverse Power Dissipation PR [W]
60
DC
D=0.05
0.1
50
0.2
40
0.3
30
0.5
20
SIN
0.8
10
0
0
20
40
60
80
100
120
Reverse Voltage VR [V]
Tj = 150°C
0
VR
tp
D=tp /T
T
DF10SC9
Forward Power Dissipation
16
Forward Power Dissipation PF [W]
14
12
D=0.8
10
0.3
DC
SIN 0.5
0.2
8
0.05
0.1
6
4
2
0
0
2
4
6
8
10
12
14
16
Average Rectified Forward Current IO [A]
Tj = 150°C
IO
0
tp
D=tp /T
T
DF10SC9
Derating Curve
Average Rectified Forward Current IO [A]
20
DC
15
D=0.8
0.5
SIN
10
0.3
0.2
0.1
5
0.05
0
0
20
40
60
80
100
120
140
160
Case Temperature Tc [°C]
VR = 45V
IO
0
0
VR
tp
D=tp /T
T
DF10SC9
Peak Surge Forward Capability
IFSM
200
10ms 10ms
Peak Surge Forward Current IFSM [A]
1 cycle
non-repetitive,
sine wave,
Tj=125°C before
surge current is applied
150
100
50
0
1
2
5
10
20
Number of Cycles [cycles]
50
100
SBD
Repetitive Surge Reverse Power Derating Curve
120
PRRSM Derating [%]
100
80
60
40
20
0
0
50
100
150
Junction Temperature Tj [°C]
IRP
IR
VR
VRP
0.5IRP
0
tp
PRRSM = IRP × VRP
SBD
Repetitive Surge Reverse Power Capability
PRRSM(t p) / PRRSM(t p=10µs) Ratio
10
1
0.1
1
10
100
Pulse Width t p [µs]
IRP
IR
VR
VRP
0.5IRP
0
tp
PRRSM = IRP × VRP
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