Vishay DG2016DQ High-bandwidth, low voltage, dual spdt analog switch Datasheet

DG2016
New Product
Vishay Siliconix
High-Bandwidth, Low Voltage, Dual SPDT Analog Switch
FEATURES
BENEFITS
APPLICATIONS
D Single Supply (1.8 V to 5.5 V)
D Low On-Resistance - rON: 2.4 W
D Crosstalk and Off Isolation: -81 dB @
1 MHz
D MSOP-10 Package
D
D
D
D
D
D
D
D
D
D
D
Reduced Power Consumption
High Accuracy
Reduce Board Space
Low-Voltage Logic Compatible
High Bandwidth
Cellular Phones
Speaker Headset Switching
Audio and Video Signal Routing
PCMCIA Cards
Low-Voltage Data Acquisition
ATE
DESCRIPTION
The
DG2016
is
a
monolithic
CMOS
dual
single-pole/double-throw (SPDT) analog switch. It is
specifically designed for low-voltage, high bandwidth
applications.
The DG2016’s on-resistance (3 W @ 2.7 V), matching and
flatness are guaranteed over the entire analog voltage range.
Wide dynamic performance is achieved with better than
–80 dB for both cross-talk and off-isolation at 1 MHz.
Both SPDT’s operate with independent control logic, conduct
equally well in both directions and block signals up to the
power supply
guaranteed.
level
when off. Break-before-make is
With fast switching speeds, low on-resistance, high
bandwidth, and low charge injection, the DG2016 is ideally
suited for audio and video switching with high linearity.
Built on Vishay Siliconix’s low voltage CMOS technology, the
DG2016 contains an epitaxial layer which prevents latch-up.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
MSOP-10
TRUTH TABLE
IN1
1
10
COM1
NO1
2
9
NC1
GND
3
8
V+
NO2
4
7
NC2
IN2
5
6
COM2
Top View
Document Number: 72030
S-22312—Rev. A, 20-Jan-03
Logic
NC1 and NC2
NO1 and NO2
0
ON
OFF
1
OFF
ON
ORDERING INFORMATION
Temp Range
Package
Part Number
-40 to 85°C
MSOP-10
DG2016DQ
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1
DG2016
New Product
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Reference to GND
V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +6 V
IN, COM, NC, NOa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to (V+ + 0.3 V)
Continuous Current (Any terminal) . . . . . . . . . . . . . . . . . . . . . . . . . . . "50 mA
Peak Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "200 mA
(Pulsed at 1 ms, 10% duty cycle)
Storage Temperature (D Suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 150°C
Power Dissipation (Packages)b
MSOP-10c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 320 mW
Notes:
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 4.0 mW/_C above 70_C
SPECIFICATIONS (V+ = 3 V)
Limits
Test Conditions
Otherwise Unless Specified
Parameter
Symbol
V+ = 3 V, "10%, VIN = 0.4 or 2.0 Ve
- 40 to 85_C
Tempa
Minb
Full
0
Typc
Maxb
Unit
V+
V
Analog Switch
Analog Signal Ranged
On-Resistance
rON Flatness
rON Match Between Channels
Switch Off Leakage Current f
VNO, VNC,
VCOM
rON
rON
Flatness
DrON
INO(off),
INC(off)
ICOM(off)
Channel-On Leakage Current f
ICOM(on)
V+ = 2.7 V, VCOM = 0.2 V/1.5 V
INO, INC = 10 mA
Room
Full
V+ = 2.7 V
VCOM = 0 to V+, INO, INC = 10 mA
Room
V+ = 3.3 V, VNO, VNC = 1 V/3 V
VCOM = 3 V/1 V
V+ = 3.3 V, VNO, VNC = VCOM = 1 V/3 V
3.0
4.8
5.3
1.6
Room
W
0.2
Room
Full
- 0.25
- 2.5
0.01
0.25
2.5
Room
Full
- 0.25
- 2.5
0.01
0.25
2.5
Room
Full
- 0.25
- 2.5
0.01
0.25
2.5
1.6
nA
Digital Control
Input High Voltaged
VINH
Full
Input Low Voltage
VINL
Full
Input Capacitance
Input Current
Full
Cin
IINL or IINH
0.4
VIN = 0 or V+
Full
5
1
V
pF
1
mA
Dynamic Characteristics
Turn-On Time
tON
VNO or VNC = 2.0 V, RL = 50 W,
W CL = 35 pF
Turn-Off Time
tOFF
Room
Full
28
53
59
Room
Full
13
38
38
td
VNO or VNC = 2.0 V, RL = 50 W, CL = 35 pF
Full
Charge Injectiond
QINJ
CL = 1 nF, VGEN = 0 V, RGEN = 0 W
Room
38
Off-Isolationd
OIRR
Room
- 78
Crosstalkd
XTALK
Room
- 82
CNO(off)
Room
15
CNC(off)
Room
15
Room
49
Room
45
Full
0.01
Break-Before-Make Time
NO, NC Off Capacitanced
Channel-On Capacitanced
CNO(on)
RL = 50 W
W, CL = 5 pF, f = 1 MHz
VIN = 0 or V+, f = 1 MHz
CNC(on)
ns
1
pC
dB
pF
Power Supply
Power Supply Current
I+
VIN = 0 or V+
1.0
mA
Notes:
a.
b.
c.
d.
e.
f.
Room = 25°C, Full = as determined by the operating suffix.
Typical values are for design aid only, not guaranteed nor subject to production testing.
The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
Guarantee by design, nor subjected to production test.
VIN = input voltage to perform proper function.
Guaranteed by 5-V leakage testing, not production tested.
www.vishay.com
2
Document Number: 72030
S-22312—Rev. A, 20-Jan-03
DG2016
New Product
Vishay Siliconix
SPECIFICATIONS (V+ = 5 V)
Limits
Test Conditions
Otherwise Unless Specified
Parameter
Symbol
V+ = 5 V, "10%, VIN = 0.8 or 2.4 Ve
- 40 to 85_C
Tempa
Minb
Full
0
Typc
Maxb
Unit
V+
V
Analog Switch
Analog Signal Ranged
On-Resistance
rON Flatness
rON Match Between Channels
Switch Off Leakage Current
VNO, VNC,
VCOM
rON
V+ = 4.5 V, VCOM = 3 V, INO, INC = 10 mA
rON
Flatness
V+ = 4.5 V, VCOM = 0 to V+, INO, INC = 10 mA
2.4
Room
4.0
4.3
1.2
DrON
Room
INO(off),
INC(off)
Room
Full
- 0.25
- 2.5
0.01
0.25
2.5
Room
Full
- 0.25
- 2.5
0.01
0.25
2.5
Room
Full
- 0.25
- 2.5
0.01
0.25
2.5
2.0
ICOM(off)
Channel-On Leakage Current
Room
Full
ICOM(on)
V+ = 5.5 V
VNO, VNC = 1 V/4.5 V, VCOM = 4.5 V/1 V
V+ = 5.5 V, VNO, VNC = VCOM = 1 V/4.5 V
W
0.2
nA
Digital Control
Input High Voltaged
VINH
Full
Input Low Voltage
VINL
Full
Input Capacitance
Input Current
Full
Cin
IINL or IINH
0.8
VIN = 0 or V+
Full
5
1
V
pF
1
mA
Dynamic Characteristics
Turn-On Time
tON
Turn-Off Time
tOFF
VNO or VNC = 3 V, RL = 50 W
W, CL = 35 pF
Break-Before-Make Time
Charge Injectiond
48
52
Room
Full
8
33
35
td
VNO or VNC = 3 V, RL = 50 W, CL = 35 pF
Full
CL = 1 nF, VGEN = 0 V, RGEN = 0 W
Room
79
Room
- 81
Room
- 82
CNO(off)
Room
14
CNC(off)
Room
14
Room
48
Room
44
OIRR
Crosstalkd
XTALK
Channel-On Capacitanced
23
QINJ
Off-Isolationd
Source-Off Capacitanced
Room
Full
CNO(on)
RL = 50 W
W, CL = 5 pF, f = 1 MHz
VIN = 0 or V+, f = 1 MHz
CNC(on)
ns
1
pC
dB
pF
Power Supply
Power Supply Range
V+
Power Supply Current
I+
1.8
VIN = 0 or V+
Full
0.01
5.5
V
1.0
mA
Notes:
a.
b.
c.
d.
e.
f.
Room = 25°C, Full = as determined by the operating suffix.
Typical values are for design aid only, not guaranteed nor subject to production testing.
The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
Guarantee by design, nor subjected to production test.
VIN = input voltage to perform proper function.
Guaranteed by 5-V leakage testing, not production tested.
Document Number: 72030
S-22312—Rev. A, 20-Jan-03
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DG2016
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
rON vs. VCOM and Supply Voltage
rON vs. Analog Voltage and Temperature
5
8
T = 25_C
IS = 10 mA
4
r ON - On-Resistance ( W )
r ON - On-Resistance ( W )
7
6
5
4
V+ = 3.0 V,
V+ = 5.0 V,
3
2
V+ = 3 V
85_C
25_C
- 40_C
3
2
V+ = 5 V
85_C
1
25_C
- 40_C
1
0
0
0
1
2
3
4
5
0
1
2
VCOM - Analog Voltage (V)
Supply Current vs. Temperature
4
5
Supply Current vs. Input Switching Frequency
10000
10 mA
V+ = 5 V
1 mA
1000
100
I+ - Supply Current (A)
I+ - Supply Current (nA)
3
VCOM - Analog Voltage (V)
V+ = 5 V
VIN = 0 V
V+ = 3 V
VIN = 0 V
10
100 mA
10 mA
1 mA
100 nA
1
- 60
10 nA
- 40
- 20
0
20
40
60
80
100
10
100
Temperature (_C)
1K
100 K
1M
10 M
Input Switching Frequency (Hz)
Leakage Current vs. Temperature
Leakage vs. Analog Voltage
10000
100
V+ = 5 V
75
V+ = 5 V
ICOM(off)
100
Leakage Current (pA)
INO(off), IINC(off)
1000
Leakage Current (pA)
10 K
ICOM(on)
10
50
ICOM(on)
25
ICOM(off)
0
INO(off), IINC(off)
- 25
- 50
- 75
1
- 60
- 100
- 40
- 20
0
20
40
Temperature (_C)
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4
60
80
100
0
1
2
3
4
5
VCOM, VNO, VNC - Analog Voltage (V)
Document Number: 72030
S-22312—Rev. A, 20-Jan-03
DG2016
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Insertion Loss, Off-Isolation
Crosstalk vs. Frequency
Switching Time vs. Temperature
60
10
RL = 50 W
LOSS
- 10
Loss, OIRR, X TALK (dB)
t ON / t OFF - Switching Time (m s)
50
40
tON V+ = 3 V
30
tON V+ = 5 V
20
tOFF V+ = 3 V
10
- 30
- 50
XTALK
OIRR
V+ = 5 V
RL = 50 W
- 70
tOFF V+ = 5 V
0
- 60
- 90
- 40
- 20
0
20
40
60
80
100
1M
100 K
1G
Frequency (Hz)
Switching Threshold vs. Supply Voltage
Charge Injection vs. Analog Voltage
3.0
80
60
Q - Charge Injection (pC)
2.5
- Switching Threshold (V)
100 M
10 M
Temperature (_C)
2.0
1.5
VT
1.0
40
20
V+ = 5 V
0
- 20
V+ = 3 V
- 40
0.5
- 60
0.0
- 80
0
1
2
3
4
5
6
0
7
1
V+ - Supply Voltage (V)
2
3
4
5
VCOM - Analog Voltage (V)
TEST CIRCUITS
V+
Logic
Input
V+
Switch
Input
NO or NC
tr t 5 ns
tf t 5 ns
VOUT
0.9 x VOUT
IN
Logic
Input
50%
VINL
Switch Output
COM
VINH
RL
50 W
GND
CL
35 pF
Switch
Output
0V
tON
tOFF
0V
Logic “1” = Switch On
Logic input waveforms inverted for switches that have
the opposite logic sense.
CL (includes fixture and stray capacitance)
VOUT + VCOM
ǒ
RL
Ǔ
R L ) R ON
FIGURE 1. Switching Time
Document Number: 72030
S-22312—Rev. A, 20-Jan-03
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5
DG2016
New Product
Vishay Siliconix
TEST CIRCUITS
V+
Logic
Input
V+
COM
NO
VNO
VINH
tr <5 ns
tf <5 ns
VINL
VO
NC
VNC
RL
50 W
IN
CL
35 pF
GND
VNC = VNO
VO
90%
Switch
0V
Output
tD
tD
CL (includes fixture and stray capacitance)
FIGURE 5. Break-Before-Make Interval
V+
DVOUT
V+
Rgen
NC or NO
COM
VOUT
VOUT
+
IN
IN
Vgen
CL = 1 nF
VIN = 0 - V+
On
On
Off
GND
Q = DVOUT x CL
IN depends on switch configuration: input polarity
determined by sense of switch.
FIGURE 2. Charge Injection
V+
V+
10 nF
10 nF
V+
V+
NC or NO
IN
COM
0V, 2.4 V
Meter
COM
COM
IN
0 V, 2.4 V
RL
NC or NO
GND
HP4192A
Impedance
Analyzer
or Equivalent
GND
Analyzer
VCOM
Off Isolation + 20 log V
NOńNC
FIGURE 3. Off-Isolation
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f = 1 MHz
FIGURE 4. Channel Off/On Capacitance
Document Number: 72030
S-22312—Rev. A, 20-Jan-03
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