Vishay DG2019DN Low voltage, dual dpdt and quad spdt analog switch Datasheet

DG2018/2019
New Product
Vishay Siliconix
Low Voltage, Dual DPDT and Quad SPDT Analog Switches
FEATURES
BENEFITS
APPLICATIONS
D Low Voltage Operation (1.8 V to 5.5 V)
D Low On Resistance
– rDS(on) : 6 W @ 2.7 V
D Low Voltage Logic Compatible
– DG2019: VINH = 1 V
D High Bandwidth: 150 MHz
D QFN-16 Package
D Ideal for Both Analog and Digital
Signal Switching
D Reduced Power Consumption
D High Accuracy
D Reduced PCB Space
D Fast Switching
D Low Leakage
D
D
D
D
D
Cellular Phones
Audio and Video Signal Routing
PCMCIA Cards
Battery Operated Systems
Portable Instrumentation
DESCRIPTION
The DG2018 and DG2019 are low voltage, single supply
analog
switches.
The
DG2018
is
a
dual
double-pole/double-throw (DPDT) with two control inputs that
each controls a pair of single-pole/double-throw (SPDT). The
DG2019 uses one control pin to operate four independent
SPDT switches.
When operated on a +3-V supply, the DG2018’s control pins
are compatible with 1.8-V digital logic. The DG2019 has an
available feature of a VL pin that allows a 1.0-V threshold for the
control pin when VL is powered with 1.5 V.
Built on Vishay Siliconix’s low voltage submicron CMOS
process, the DG2018 and DG2019 are ideal for high
performance switching of analog signals; providing low
on-resistance (6 W @ +2.7 V), fast speed (Ton, Toff @ 42 ns
and 16 ns), and a bandwidth that exceeds 150 MHz.
The DG2018 and DG2019 were designed to offer solutions
that extend beyond audio/video functions, to providing the
performance required for today’s demanding mixed-signal
switching in portable applications.
An epitaxial layer prevents latch-up. Brake-before-make is
guaranteed for all SPDT’s. All switches conduct equally well in
both directions when on, and blocks up to the power supply
level when off.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
TRUTH TABLE
DG2018DN
QFN-16 (3 X 3)
COM1 NO1
16
NC1
15
V+
NC4
14
13
1
IN1, IN2
12
COM4
Logic
NC1 and NC2
NO1 and NO2
0
ON
OFF
1
OFF
ON
Logic
NC3 and NC4
NO3 and NO4
0
ON
OFF
1
OFF
ON
IN3, IN4
IN1, IN2
2
11
NO4
NO2
3
10
IN3, IN4
COM2
4
9
5
6
NC2
GND
7
NO3 COM3
Top View
Document Number: 72342
S-31644—Rev. A, 01-Aug-03
8
NC3
ORDERING INFORMATION
Temp Range
Package
Part Number
-40 to 85°C
QFN-16 (3 x 3 mm)
DG2018DN
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DG2018/2019
New Product
Vishay Siliconix
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG2019DN
QFN-16 (3 X 3)
COM1 NO1
16
15
V+
NC4
14
13
TRUTH TABLE
Logic
NC1
1
12
COM4
IN
2
11
NO4
NO2
3
10
VL
COM2
4
9
5
6
NC2
GND
7
NC3
NC1, 2, 3, and 4
NO1, 2, 3, and 4
0
ON
OFF
1
OFF
ON
ORDERING INFORMATION
Temp Range
Package
Part Number
-40 to 85°C
QFN-16 (3 x 3 mm)
DG2019DN
8
NO3 COM3
Top View
ABSOLUTE MAXIMUM RATINGS
Reference to GND
V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +6 V
IN, COM, NC, NO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to (V+ + 0.3 V)
Continuous Current (Any terminal) . . . . . . . . . . . . . . . . . . . . . . . . . . . "50 mA
Peak Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "100 mA
(Pulsed at 1 ms, 10% duty cycle)
Storage Temperature (D Suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 150°C
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Power Dissipation (Packages)b
QFN-16 (3 x 3 mm)c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 850 mW
Notes:
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 4.0 mW/_C above 70_C
Document Number: 72342
S-31644—Rev. A, 01-Aug-03
DG2018/2019
New Product
Vishay Siliconix
SPECIFICATIONS (V+ = 3 V)
Limits
Test Conditions
Otherwise Unless Specified
Parameter
Symbol
V+ = 3 V, "10%
(DG2018 Only) VIN = 0.5 or 1.4 Ve
(DG2019 Only) VL = 1.5 V, VIN = 0.4 or 1.0 Ve
−40 to 85_C
Tempa
Minb
Full
0
Typc
Maxb
Unit
V+
V
Analog Switch
Analog Signal Ranged
On-Resistance
rON Flatness
rON Match Between Channels
Switch Off Leakage Current
VNO, VNC,
VCOM
rON
rON
Flatness
DrON
INO(off),
INC(off)
ICOM(off)
Channel-On Leakage Current
ICOM(on)
V+ = 2.7 V, VCOM = 0.2 V/1.5 V
INO, INC = 10 mA
Room
Full
6
12
15
V+ = 2.7 V
VCOM = 0 to V+,
V+ INO, INC = 10 mA
Room
0.5
2
0.6
3
Room
Full
−1
−10
0.3
1
10
Room
Full
−1
−10
0.3
1
10
Room
Full
−1
1.0
0.3
1
10
DG2018
Full
1.4
DG2019
Full
1.0
DG2018
Full
DG2019
Full
V+ = 3.3 V, VNO, VNC =0.3 V/3 V
VCOM = 3 V/ 0.3 V
V+ = 3.3 V, VNO, VNC = VCOM = 0.3 V/ 3 V
Room
W
nA
Digital Control
Input High Voltage
VINH
VL = 1.5 V
Input Low Voltage
VINL
Input Capacitance
Cin
f = 1 MHz
Full
IINL or IINH
VIN = 0 or V+
Full
Input Current
VL = 1.5 V
0.5
V
0.4
9
−1
pF
1
mA
Dynamic Characteristics
Turn-On Time
tON
VNO or VNC = 2.0
2 0 V,
V RL = 300 W
W, CL = 35 pF
Turn-Off Time
Break-Before-Make Time
tOFF
Room
Full
42
55
65
Room
Full
16
25
35
td
VNO or VNC = 2.0 V, RL = 50 W, CL = 35 pF
Full
Charge Injectiond
QINJ
CL = 1 nF, VGEN = 0 V, RGEN = 0 W
Room
−1.46
Off-Isolationd
OIRR
Room
−54
Crosstalkd
XTALK
Room
−53
CNO(off)
Room
9
CNC(off)
Room
9
Room
30
Room
30
Full
0.01
NO, NC Off Capacitanced
Channel On Capacitanced
Channel-On
CNO(on)
RL = 50 W,
W CL = 5 pF,
pF f = 1 MHz
VIN = 0 or V+,
V+ f = 1 MHz
CNC(on)
ns
1
pC
dB
pF
Power Supply
Power Supply Current
I+
VIN = 0 or V+
1.0
mA
Notes:
a.
b.
c.
d.
e.
Room = 25°C, Full = as determined by the operating suffix.
Typical values are for design aid only, not guaranteed nor subject to production testing.
The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
Guarantee by design, nor subjected to production test.
VIN = input voltage to perform proper function.
Document Number: 72342
S-31644—Rev. A, 01-Aug-03
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DG2018/2019
New Product
Vishay Siliconix
SPECIFICATIONS (V+ = 5 V)
Limits
Test Conditions
Otherwise Unless Specified
Parameter
Symbol
V+ = 5 V, "10%,
(DG2018 Only) VIN = 0.8 or 1.8 Ve
(DG2019 Only) VL = 1.5 V, VIN = 0.4 or 1.0 Ve
−40 to 85_C
Tempa
Minb
Full
0
Typc
Maxb
Unit
V+
V
Analog Switch
Analog Signal Ranged
On-Resistance
rON
rON
Flatness
rON Flatness
rON Match Between Channels
Switch Off Leakage
VNO, VNC,
VCOM
Currentf
DrON
INO(off),
INC(off)
ICOM(off)
Channel-On Leakage Currentf
ICOM(on)
V+ = 4.5 V, VCOM = 3 V, INO, INC = 10 mA
V+ = 4.5 V
VCOM = 0 to V+,
V+ INO, INC = 10 mA
Room
Full
4
8
10
Room
0.6
1.2
0.6
1.2
Room
Full
−1
−10
0.03
1
10
Room
Full
−1
−10
0.03
1
10
Room
Full
−1
−10
0.03
1
10
DG2018
Full
1.8
DG2019
Full
1.0
DG2018
Full
DG2019
Full
V+ = 5.5 V
VNO, VNC = 1 V/4.5 V, VCOM = 4.5 V/1 V
V+ = 5.5 V, VNO, VNC = VCOM = 1 V/4.5 V
Room
W
nA
Digital Control
Input High Voltage
VINH
Input Low Voltage
VINL
Input Capacitance
Cin
Input Current
IINL or IINH
VL = 1.5 V
VL = 1.5 V
0.8
0.4
Full
VIN = 0 or V+
Full
V
9
pF
1
1
mA
Dynamic Characteristics
Turn-On Time
tON
Turn-Off Time
tOFF
VNO or VNC = 3 V
V, RL = 300 W,
W CL = 35 pF
Break-Before-Make Time
Charge Injectiond
48
52
Room
Full
19
33
35
td
VNO or VNC = 3 V, RL = 50 W, CL = 35 pF
Full
CL = 1 nF, VGEN = 0 V, RGEN = 0 W
Room
−2.46
Room
−54
Room
−53
CNO(off)
Room
7.5
CNC(off)
Room
7.5
Room
30
Room
30
OIRR
Crosstalkd
XTALK
Channel On Capacitanced
Channel-On
44
QINJ
Off-Isolationd
Source Off Capacitanced
Source-Off
Room
Full
CNO(on)
RL = 50 W,
W CL = 5 pF,
pF f = 1 MHz
VIN = 0 or V+,
V+ f = 1 MHz
CNC(on)
ns
1
pC
dB
pF
Power Supply
Power Supply Range
V+
Power Supply Current
I+
1.8
VIN = 0 or V+
Full
0.01
5.5
V
1.0
mA
Notes:
a.
b.
c.
d.
e.
f.
Room = 25°C, Full = as determined by the operating suffix.
Typical values are for design aid only, not guaranteed nor subject to production testing.
The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
Guarantee by design, nor subjected to production test.
VIN = input voltage to perform proper function.
Not production tested.
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Document Number: 72342
S-31644—Rev. A, 01-Aug-03
DG2018/2019
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
rON vs. VCOM and Supply Voltage
rON vs. Analog Voltage and Temperature
10
9
r ON − On-Resistance ( W )
r ON − On-Resistance ( W )
T = 25_C
ICOM= 10 mA
8
V+ = 2.7 V
85_C
25_C
8
V+ = 2.7 V
6
V+ = 5.5 V
4
V+ = 3.3 V
2
7
−40_C
6
V+ = 5.5 V
5
85_C
25_C
−40_C
4
3
2
1
0
0
0
1
2
3
4
5
6
0
1
2
VCOM − Analog Voltage (V)
3
4
5
6
VCOM − Analog Voltage (V)
Supply Current vs. Temperature
Supply Current vs. Input Switching Frequency
10000
10 mA
1000
I+ − Supply Current (A)
I+ − Supply Current (pA)
1 mA
V+ = 5.5 V
VIN = 0 V
100
10
100 mA
10 mA
1 mA
100 nA
10 nA
1
−60
0
−40
−20
0
20
40
60
80
100
0
2M
Temperature (_C)
6M
8M
10 M
Input Switching Frequency (Hz)
Leakage Current vs. Temperature
Leakage vs. Analog Voltage
10000
150
125
V+ = 5 V
100
Leakage Current (pA)
1000
Leakage Current (pA)
4M
INO(off), IINC(off)
100
ICOM(off)
ICOM(on)
10
V+= 3.3 V
75
50
ICOM(off)
ICOM(on)
25
0
−25
INO(off), INC(off)
−50
−75
−100
−125
1
−60
−40
−20
0
20
40
Temperature (_C)
Document Number: 72342
S-31644—Rev. A, 01-Aug-03
60
80
100
−150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VCOM, VNO, VNC − Analog Voltage (V)
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DG2018/2019
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Switching Time vs. Temperature
vs. Supply Voltage
Switching Voltage vs. Supply Voltage (V+)
50
1.8
RL = 300 W
1.6
tON V+ = 3.3 V
Vth − Threshold Voltage
tON/toff − Switching Time (ns)
40
tON V+ = 5.5 V
30
tOFF V+ = 3.3 V
20
1.4
ON/OFF
1.2
1.0
OFF/ON
0.8
0.6
0.4
tOFF V+ = 5.5 V
10
DG2018
0.2
0
−60
0.0
−40
−20
0
20
40
60
80
100
0
1
Temperature (_C)
4
5
6
Charge Injection at Source vs. Analog Voltage
10
1.6
8
Q − Charge Injection (pC)
DG2019
1.4
Vth − Threshold Voltage
3
V+ − Supply Voltage (V)
VIN vs. VL (Typ)
1.8
2
1.2
V+ = 3.3 V
V+ = 5.5 V
1.0
0.8
V+ = 5.5 V
6
4
2
0
V+ = 3.3 V
−2
0.6
−4
0.4
1.0
−6
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
0
1
2
3
4
5
6
VCOM − Analog Voltage (V)
VL (V)
Insertion Loss, Off Isolation and Crosstalk
vs. Frequency
20
Insertion Loss
−3 dB = 150 MHz
0
Loss, OIRR, Xtalk (dB)
−20
V+ = 3.3, 5.5 V
RL = 50 W
−40
OIRR
−60
Crosstalk
−80
−100
−120
100 K
1M
10 M
100 M
1G
Frequency (Hz)
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Document Number: 72342
S-31644—Rev. A, 01-Aug-03
DG2018/2019
New Product
Vishay Siliconix
TEST CIRCUITS
V+
VINH
Logic
Input
V+
VOUT
IN
Logic
Input
RL
300 W
GND
0.9 x VOUT
Switch
Output
CL
35 pF
0V
tON
0V
ǒ
RL
tOFF
Logic “1” = Switch On
Logic input waveforms inverted for switches that have
the opposite logic sense.
CL (includes fixture and stray capacitance)
VOUT + VCOM
tr t 5 ns
tf t 5 ns
VINL
Switch Output
COM
NO or NC
Switch
Input
50%
Ǔ
R L ) R ON
FIGURE 1. Switching Time
V+
Logic
Input
V+
COM
NO
VNO
VINH
tr <5 ns
tf <5 ns
VINL
VO
NC
VNC
RL
50 W
IN
CL
35 pF
GND
VNC = VNO
VO
90%
Switch
0V
Output
tD
tD
CL (includes fixture and stray capacitance)
FIGURE 3. Break-Before-Make Interval
V+
Rgen
+
Vgen
VIN = 0 − V+
V+
NC or NO
COM
IN
VOUT
DVOUT
VOUT
CL = 1 nF
IN
On
Off
On
GND
Q = DVOUT x CL
IN depends on switch configuration: input polarity
determined by sense of switch.
FIGURE 2. Charge Injection
Document Number: 72342
S-31644—Rev. A, 01-Aug-03
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DG2018/2019
New Product
Vishay Siliconix
TEST CIRCUITS
V+
V+
10 nF
10 nF
V+
V+
NC or NO
IN
COM
COM
RL
Analyzer
Meter
0 V, 2.4 V
GND
IN
NC or NO
HP4192A
Impedance
Analyzer
or Equivalent
GND
f = 1 MHz
VCOM
Off Isolation + 20 log V
NOńNC
FIGURE 4. Off-Isolation
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COM
0V, 2.4 V
FIGURE 5. Channel Off/On Capacitance
Document Number: 72342
S-31644—Rev. A, 01-Aug-03
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