Vishay DG201BDQ Improved quad cmos analog switch Datasheet

DG201B/202B
Vishay Siliconix
Improved Quad CMOS Analog Switches
22-V Supply Voltage Rating
TTL and CMOS Compatible Logic
Low On-Resistance—rDS(on): 45 Low Leakage—ID(on): 20 pA
Single Supply Operation Possible
Extended Temperature Range
Fast Switching—tON: 120 ns
Low Glitching—Q: 1 pC
Wide Analog Signal Range
Simple Logic Interface
Higher Accuracy
Minimum Transients
Reduced Power Consumption
Superior to DG201A/202
Space Savings (TSSOP)
Industrial Instrumentation
Test Equipment
Communications Systems
Disk Drives
Computer Peripherals
Portable Instruments
Sample-and-Hold Circuits
The DG201B/202B analog switches are highly improved
versions of the industry-standard DG201A/202. These
devices are fabricated in Vishay Siliconix’ proprietary silicon
gate CMOS process, resulting in lower on-resistance, lower
leakage, higher speed, and lower power consumption.
up to 22-V input signals, and have an improved continuous
current rating of 30 mA. An epitaxial layer prevents latchup.
All devices feature true bi-directional performance in the on
condition, and will block signals to the supply voltages in the
off condition.
These quad single-pole single-throw switches are designed
for a wide variety of applications in telecommunications,
instrumentation, process control, computer peripherals, etc.
An improved charge injection compensation design minimizes
switching transients. The DG201B and DG202B can handle
The DG201B is a normally closed switch and the DG202B is
a normally open switch. (See Truth Table.)
DG201B
Dual-In-Line, SOIC and TSSOP
IN1
1
16
IN2
D1
2
15
D2
Logic
DG201B
DG202B
S1
3
14
S2
0
ON
OFF
V–
ON
13
V+
OFF
4
GND
5
12
NC
S4
6
11
S3
D4
7
10
D3
IN4
8
9
IN3
1
Logic “0” 0.8 V
Logic “1” 2.4 V
Top View
Document Number: 70037
S-52433—Rev. G, 06-Sep-99
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DG201B/202B
Vishay Siliconix
ORDERING INFORMATION
Temp Range
Package
16-Pin Plastic DIP
16-Pin CerDIP
–40
40 to 85
85_C
C
16-Pin Narrow SOIC
16-Pin TSSOP
Part Number
DG201BDJ
DG202BDJ
DG201BDK
DG202BDK
DG201BDY
DG202BDY
DG201BDQ
DG202BDQ
DG201BAK
55 to 125
C
–55
125_C
16 Pi CerDIP
C DIP
16-Pin
DG201BAK/883
DG202BAK
DG202BAK/883
ABSOLUTE MAXIMUM RATINGS
Voltages Referenced to V–
V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V
GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V
Digital Inputsa VS, VD . . . . . . . . . . . . . . . . . . . . . . . . . . (V–) –2 V to (V+) +2 V
or 30 mA, whichever occurs first
Current, Any Terminal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA
Peak Current, S or D
(Pulsed at 1 ms, 10% duty cycle max) . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA
Storage Temperature
(AK, DK Suffix) . . . . . . . . . . . . . . –65 to 150_C
(DJ, DY, DQ Suffix) . . . . . . . . . . –65 to 125_C
Power Dissipation (Package)b
16-Pin Plastic DIPc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 470 mW
16-Pin Narrow SOIC and TSSOPd . . . . . . . . . . . . . . . . . . . . . . . . . . . . 640 mW
16-Pin CerDIPe . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900 mW
Notes:
a. Signals on SX, DX, or INX exceeding V+ or V– will be clamped by internal
diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 6.5 mW/_C above 75_C
d. Derate 7.6 mW/_C above 75_C
e. Derate 12 mW/_C above 75_C
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)
V+
5V
Reg
SX
Level
Shift/
Drive
INX
V–
V+
DX
GND
V–
FIGURE 1.
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Document Number: 70037
S-52433—Rev. G, 06-Sep-99
DG201B/202B
Vishay Siliconix
Test Conditions
Unless Specified
Parameter
Symbol
V+ = 15 V, V– = –15 V
VIN = 2.4 V, 0.8 Vf
Tempb
Typc
A Suffix
D Suffix
–55 to 125_C
–40 to 85_C
Mind Maxd Mind Maxd
Unit
Analog Switch
Analog Signal Rangee
Drain-Source On-Resistance
rDS(on) Match
VANALOG
rDS(on)
Full
VD = 10 V, IS = 1 mA
DrDS(on)
Room
Full
45
Room
2
V
W
Source Off Leakage Current
IS(off)
VS = 14 V, VD = 14 V
Room
Full
0.01
–0.5
–5
0.5
5
Drain Off Leakage Current
ID(off)
VD = 14 V, VS = 14 V
Room
Full
0.01
0.5
5
Drain On Leakage Current
ID(on)
VS = VD = 14 V
Room
Full
0.02
0.5
10
nA
A
Digital Control
Input Voltage High
VINH
Full
Input Voltage Low
VINL
Full
Input Current
Input Capacitance
IINH or IINL
VINH or VINL
CIN
–
Full
–
Room
5
Room
Full
120
Room
Full
65
Room
1
Room
5
V
mA
pF
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Charge Injection
Source-Off Capacitance
tON
VS = 2 V
S S
it hi Ti
T t Circuit
Ci it
See
Switching
Time Test
tOFF
Q
CS(off)
Drain-Off Capacitance
CD(off)
Channel On Capacitance
CD(on)
Off Isolation
OIRR
Channel-to-Channel
Crosstalk
XTALK
CL = 1000 pF, Vg = 0 V
Rg = 0 W
VS = 0 V, f = 1 MHz
VD = VS = 0 V, f = 1 MHz
CL = 15 pF, RL = 50 W
VS = 1 VRMS, f = 100 kHz
Room
5
Room
16
Room
90
Room
95
ns
pC
pF
F
dB
Power Supply
50
Room
Full
Positive Supply Current
I+
Negative Supply Current
I–
Room
Full
Power Supply Range for
Continuous Operation
VOP
Full
VIN = 0 or 5 V
Document Number: 70037
S-52433—Rev. G, 06-Sep-99
50
mA
V
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DG201B/202B
Vishay Siliconix
Test Conditions
Unless Specified
Parameter
Symbol
V+ = 12 V, V– = 0 V
VIN = 2.4 V, 0.8 Vf
Tempb
Typc
A Suffix
D Suffix
–55 to 125_C
–40 to 85_C
Mind
Maxd
Mind
Maxd
Unit
V
W
Analog Switch
Analog Signal Rangee
VANALOG
Drain-Source
On-Resistance
rDS(on)
Full
VD = 3 V, 8 V, IS = 1 mA
Room
Full
90
Room
120
Room
60
Room
4
Dynamic Characteristics
Turn-On Time
tON
Turn-Off Time
tOFF
Charge Injection
Q
VS = 8 V
S S
See
Switching
it hi Ti
Time Test
T t Circuit
Ci it
CL = 1 nF, Vgen= 6 V, Rgen = 0 W
ns
pC
Power Supply
50
Room
Full
Positive Supply Current
I+
Negative Supply Current
I–
Room
Full
Power Supply Range for
Continuous Operation
VOP
Full
VIN = 0 or 5 V
50
mA
V
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25_C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f.
VIN = input voltage to perform proper function.
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Document Number: 70037
S-52433—Rev. G, 06-Sep-99
DG201B/202B
Vishay Siliconix
_ rDS(on) vs. VD and Power Supply Voltages
rDS(on) vs. VD and Temperature
110
100
100
90
90
80
5 V
70
r DS(on) ( )
80
r DS(on) ( )
V+ = 15 V
V– = –15 V
70
10 V
60
15 V
50
40
20 V
30
60
125_C
50
85_C
40
25_C
30
–55_C
20
20
10
0
–15
10
–20 –16 –12
–8
–4
0
4
8
12
16
20
–10
–5
0
5
10
15
VD – Drain Voltage (V)
VD – Drain Voltage (V)
rDS(on) vs. VD and Single Power Supply Voltages
Input Switching Threshold vs. Supply Voltage
250
2.5
225
V+ = 5 V
200
2
150
V TH ( V )
r DS(on) ( )
175
7V
125
10 V
100
1.5
1
12 V
15 V
75
50
0.5
25
0
0
0
2
4
6
8
10
12
14
4
16
6
8
VD – Drain Voltage (V)
12
14
16
18
20
V+ Positive Supply (V)
Leakage Currents vs. Analog Voltage
Leakage Currents vs. Temperature
80
60
10
1 nA
V+ = 22 V
V– = –22 V
TA = 25_C
V+ = 15 V
V– = –15 V
VS, VD = 14 V
I S, I D – Current
I S,I D – Current (pA)
40
20
0
–20
IS(off), ID(off)
ID(on)
100 pA
IS(off), ID(off)
10 pA
–40
–60
–80
–20
–15
–10
Document Number: 70037
S-52433—Rev. G, 06-Sep-99
–5
0
5
Temperature (_C)
10
15
20
1 pA
–55
–35
–15
5
25
45
65
85
105 125
Temperature (_C)
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DG201B/202B
Vishay Siliconix
_ Switching Time vs. Single Supply Voltage
Switching Time vs. Power Supply Voltage
400
500
V– = 0 V
400
Switching Time (ns)
Switching Time (ns)
300
300
200
ton
200
ton
100
toff
100
toff
0
0
2
4
6
8
10
12
14
16
18
4
0
20
V+ – Positive Supply (V)
8
12
16
20
V+, V– Positive and Negative Supplies (V)
QS, QD – Charge Injection vs. Analog Voltage
Off Isolation vs. Frequency
30
120
V+ = 15 V
V– = –15 V
110
20
0
OIRR (dB)
Q – Charge (pC)
100
10
V+ = 15 V
V– = –15 V
V+ = 12 V
V– = 0 V
90
RL = 50 80
70
–10
60
–20
–30
–15
50
40
–10
–5
0
5
10
15
10 k
100 k
VANALOG – Analog Voltage (V)
1M
10 M
f – Frequency (Hz)
Supply Current vs. Switching Frequency
I+ – Supply Current (mA)
4
3
2
1
0
1k
10 k
100 k
1M
f – Frequency (Hz)
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Document Number: 70037
S-52433—Rev. G, 06-Sep-99
DG201B/202B
Vishay Siliconix
+15 V
V+
D
S
VS = +2 V
VO
IN
tr <20 ns
tf <20 ns
50%
0V
tOFF
CL
35 pF
RL
1 kW
3V
3V
Logic
Input
V–
GND
90%
Switch
Output
VO
tON
–15 V
RL
VO = VS
RL + rDS(on)
FIGURE 2. Switching Time
+15 V
C
+15 V
C
V+
S1
VS
S
VS
VO
D
50 W
IN1
0V, 2.4 V
Rg = 50 W
0V, 2.4 V
D1
Rg = 50 W
V+
RL
IN
S2
VO
D2
NC
GND
V–
C
RL
IN2
0V, 2.4 V
GND
V–
C
–15 V
C = RF bypass
VS
Off Isolation = 20 log
XTALK Isolation = 20 log
VO
FIGURE 3. Off Isolation
VS
–15 V
VO
FIGURE 4. Channel-to-Channel Crosstalk
+15 V
DVO
Rg
VO
V+
S
D
IN
Vg
CL
1000 pF
3V
GND
VO
INX
ON
OFF
ON
V–
DVO = measured voltage error due to charge injection
The charge injection in coulombs is Q = CL x DVO
–15 V
FIGURE 5. Charge Injection
Document Number: 70037
S-52433—Rev. G, 06-Sep-99
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DG201B/202B
Vishay Siliconix
+15 V
V+
Logic Input
Low = Sample
High = Hold
1 kW
+15 V
+15 V
–15 V
–
J202
LM101A
VIN
+
2N4400
5 MW
200 W
50 pF
VOUT
5.1 MW
1000 pF
DG201B
V–
J500
30 pF
J507
–15 V
= 25 ms
= 1 ms
= 5 mV
= 5 mV/s
Aquisition Time
Aperature Time
Sample to Hold Offset
Droop Rate
–15 V
FIGURE 6. Sample-and-Hold
+15 V
160
V1
C4
fC3
Select
TTL
Control
fC2
Select
fC1
Select
150 pF
120
C3
1500 pF
Voltage Gain – dB
fC4
Select
C2
0.015 mF
C1
0.15 mF
80
fC1
fC2
fC3
fL1
0
V–
DG201B
fC4
40
fL2
fL3
fL4
GND
–40
1
–15 V
10
100
1k
–15 V
R1 = 10 kW
LM101A
+
R2 = 10 kW
VOUT
AL (Voltage Gain Below Break Frequency) =
1
fC (Break Frequency) =
2pR3CX
1M
rDS(on)
Max Attenuation =
10 kW
R3
R1
= 100 (40 dB)
1
2pR1CX
fL (Unity Gain Frequency) =
30 pF
100 k
f – Frequency (Hz)
R3 = 1 MW
+15 V
–
10 k
–47 dB
FIGURE 7. Active Low Pass Filter with Digitally Selected Break Frequency
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Document Number: 70037
S-52433—Rev. G, 06-Sep-99
DG201B/202B
Vishay Siliconix
VIN1
+5 V
+15 V
VL
V+
30 pF
+15 V
+
LM101A
VIN2
–
+15 V
DG419
–15 V
RF1
18 k
RF1
9.9 k
RF1
100 k
RG1
2 k
RG2
100 RG3
100 DG202B
CH
GND
V–
–15 V
Gain =
Gain 1 (x1)
RF + RG
Gain 2 (x10)
RG
Gain 3 (x100)
Gain 4 (x1000)
V–
GND
Logic High = Switch On
–15 V
FIGURE 8. A Precision Amplifier with Digitally Programable Input and Gains
Document Number: 70037
S-52433—Rev. G, 06-Sep-99
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